The invention discloses a GaN device double-sided heat dissipation
structure based on flexible plate bottom filling, a GaN device is electrically interconnected with a
ceramic substrate through a
welding spot, and the electrical
interconnection between the GaN device and the
ceramic substrate adopts a nano-
metal material
sintering process; a flexible insulating
copper-clad plate is sintered between the bottom electrodes of the GaN device, and the flexible insulating
copper-clad plate is located between the GaN device and the
ceramic substrate; the
enclosure frame surrounds the GaN device and is arranged on the
ceramic substrate; the cover plate is arranged above the
enclosure frame, the thermal interface material is arranged between the GaN device and the cover plate, the GaN device is coated with the thermal interface material, and the cover plate is in contact with the thermal interface material, so that heat dissipation from the GaN device to the cover plate is realized. According to the invention, an appropriate interface
interconnection material for double-sided heat dissipation of the GaN device is selected, an interface
interconnection process based on flexible plate bottom filling is realized, and the double-sided heat dissipation structure of the GaN device is realized in the airtight packaging shell, so that the GaN device with the double-sided heat dissipation structure has the characteristic of high integration.