182 results about "Wafer fabrication" patented technology

The invention relates to the technical field of wafer processing, in particular to a wafer positioning and clamping concentricity clamping device and method, and the device comprises at least three groups of clamping units. The clamping unit comprises a driving module, a transmission module and a sensing module; the driving module comprises a cylinder and an independent gas circuit for driving the cylinder; the transmission module comprises a multi-connecting-rod mechanism connected with a piston rod of the air cylinder. The movable end of the multi-connecting-rod mechanism is provided with a clamping column used for making contact with the edge of the wafer. The sensing module comprises a position sensor and a thin film pressure sensor. Each clamping unit is provided with an independent electromagnetic valve and an independent gas circuit, closed-loop feedback of a position sensor is introduced, and accurate and synchronous control over the movement tracks of the multiple clamping columns is completed; and a thin film pressure sensor is arranged at a force bearing point of the clamping column, and a self-adaptive force control module of the control system is combined, so that the technical effect that the clamping force is always stabilized in a preset safety range is achieved.

The invention relates to the technical field of wafer manufacturing, and discloses a wafer clamp, semiconductor equipment and an electroplating method. The wafer clamp comprises a base, a sealing ring and a pressure head; the base is annular, the sealing ring is installed on the base, the pressing head can cover the base and exert sealed external pressure on the back face of the wafer so that the wafer can abut against the sealing ring, and at the moment, an annular space is formed between the base and the pressing head. The external non-electroplating surface of the wafer limited by the outermost contact boundary defined by the pressing head and the sealing ring after the pressing head and the sealing ring are in contact with the wafer is located in the annular space; the wafer clamp is further provided with an air inlet structure, one end of the air inlet structure is communicated with an air source, the other end of the air inlet structure is communicated with the annular space, and the air inlet structure is used for blow-drying the external non-electroplating surface of the wafer before the wafer is electroplated. Even in an electroplating process with relatively long process time, the wafer clamp can effectively prevent electroplating liquid from entering the wafer clamp, so that the non-electroplating surface outside the wafer is prevented from being corroded; and the clamp and the sealing ring are prevented from being polluted by electroplating liquid.

The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer manufacturing sign-off method and system. By constructing an agile sign-off framework combining chip design and production process data and fusing high-level abstract analysis and high-precision process modeling capability, efficient verification, real-time verification and rapid optimization of a manufacturing process are realized, so that manufacturability, performance and quality of a chip are guaranteed, and production yield and sign-off efficiency are improved.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

This application relates to a method and product for preparing indium antimonide heterostructures that can reduce annealing thermal stress, belonging to the field of indium antimonide heterostructure manufacturing technology. The method includes: providing a donor indium antimonide substrate; forming an ion implantation layer, a weakening layer, and a residual substrate layer by ion implantation; providing a carrier indium antimonide substrate; depositing an Al2O3 passivation layer on the surfaces of the carrier indium antimonide substrate and the donor indium antimonide substrate; further depositing a SiO2 layer on the carrier indium antimonide substrate; bonding the SiO2 layer on the carrier indium antimonide substrate to the Al2O3 passivation layer on the donor indium antimonide substrate; annealing at a low temperature of ≤200℃ for 10~20h; peeling off the donor indium antimonide substrate; providing a SiC / Si substrate; bonding the peeled surface of the ion implantation layer to the SiC / Si substrate; and wet etching using BOE / DHF etching solution to obtain the heterostructure wafer.

A three-dimensional (3D) integrated circuit (IC) (3DIC) package with a bottom die layer employing an interposer substrate, and related fabrication methods. To facilitate the ability to fabricate the 3DIC package using a top die-to-bottom wafer process, a bottom die layer of the 3DIC package includes an interposer substrate. This interposer substrate provides support for a bottom die(s) of the 3DIC package. The interposer substrate is extended in length to be longer in length than the top die. The interposer substrate provides additional die area in the bottom die layer in which a larger length, top die can be bonded. In this manner, the bottom die layer, with its extended interposer substrate, can be formed in a bottom wafer in which the top die can be bonded in a top die-to-bottom wafer fabrication process.

A wire electrical discharge machining (EDM) device comprises the following: a pair of wire parallel guide rollers arranged on both sides of a workpiece to hold the workpiece between them, each of these rollers having a plurality of wire guide grooves formed at equal intervals on an outer circumferential surface, the plurality of wire guide grooves causing a plurality of running cutting wire sections to fit into them and constraining the movement of the plurality of cutting wire sections; parallel wire extension position measuring units (52a, 52b) which measure a distance between a measuring reference surface set parallel to a virtual plane containing the plurality of cutting wire sections and a wire electrode forming the plurality of cutting wire sections;a wire guide groove detachment detection unit (53) that detects the occurrence of a change in distance based on a measurement result obtained from the parallel wire extension position measuring units (52a, 52b); and a wire condition determination unit (54) that determines, based on the detection result obtained from the wire guide groove detachment detection unit (53), whether it is a wire detachment condition in which at least one of the cutting wire sections has detached from the wire guide groove, or a wire contact condition in which all cutting wire sections are in contact with the wire guide grooves.

This invention relates to the field of wafer fabrication technology, and proposes a robotic arm and wafer cleaning process for testing various types of wafer products. The robotic arm includes side grippers, a middle gripper, a first power component, and a second power component. Two side grippers are provided, each with both elastic and rigid gripping portions. The middle gripper is positioned between the two side grippers and also has a rigid gripping portion. The first power component adjusts the Y-axis distance between the two side grippers and simultaneously adjusts the X-axis distance between the side grippers and the middle gripper. The second power component drives the side grippers to rotate about the Z-axis. By incorporating a first power component, this invention allows adjustment of the distance between the two side grippers, thus accommodating the gripping of wafers of different sizes and specifications, and enabling the removal of wafers from stacking containers, making it highly convenient to use. Furthermore, it facilitates adjustment of the gripping direction of the side grippers, further improving the ease of application.

The invention discloses a polishing method and system for controlling LTV at a marking hole of a SiC wafer, and relates to the technical field of semiconductor manufacturing. A polishing solution is adopted to carry out chemical mechanical polishing on the SiC wafer with the laser marking hole under the polishing process parameters; the polishing solution comprises a KMnO4 oxidizing agent with the mass fraction of 10% + / -3% and a mixed grinding material of Al2O3 and CeO2, the particle size of the Al2O3 grinding material is 250-350 nm, the particle size of the CeO2 grinding material is 80-120 nm, the mass ratio of Al2O3 to CeO2 is 1: 1, the mass fraction of Al2O3 and CeO2 in the polishing solution is 5%-6%, and the polishing solution is maintained to be acidic. The material removal rate of the marking hole area and the material removal rate of the wafer body area are highly consistent, the SiC wafer surface with the ultrahigh flatness is obtained, local thickness changes, caused by laser marking, around the marking hole are restrained, and the overall quality and yield of SiC wafer manufacturing are improved.

Semiconductor (SC) chip devices and associated methods of making are presented. The SC chips are designed to include enlarged extension semiconductor areas next to functional integrated circuit (IC) dies on these SC chips. Some variations include designing semiconductor wafers prior to fabrication so that the resultant IC dies are surrounded by the extension semiconductor areas. Other variations include processing post manufactured semiconductor wafers to expand the size of the available extension areas by including truncated pieces of IC dies that are immediately adjacent to functional working primary IC dies. These variations provide additional room for redistribution layers to fan-out from the IC dies outwards onto the extension areas.

The invention relates to the technical field of wafer manufacturing, and discloses a high-pressure wafer bonding system in order to solve the technical problems that a temporary bonding adhesive layer is poor in uniformity extension and large in bonding thickness deviation, and the system comprises a bonding lower platform assembly which is used for bearing a wafer to be bonded; the bonding upper platform assembly is arranged above the bonding lower platform assembly, is arranged opposite to the bonding lower platform assembly and is used for applying bonding pressure; the vacuum system is arranged below the bonding lower platform assembly and used for providing a vacuum environment for a bonding cavity between the upper platform and the lower platform in the bonding process; wherein the bonding upper platform assembly realizes movement in the Z-axis direction through a lifting mechanism, and can apply bonding lower pressure not less than 50kN so as to realize high-uniformity bonding between a wafer and a carrier wafer. The upper bonding platform and the lower bonding platform are controlled by using the high-pressure bonding system, and the wafer and the carrier wafer are bonded together through the bonding layer in a downward flat pressing manner, so that the subsequent de-bonding process is simplified, and the wafer manufacturing cost is reduced.

The present invention is a temporary adhesive for wafer processing, which is used for temporarily bonding a wafer to a support. This temporary adhesive for wafer processing is composed of a curable silicone resin composition which can be cured by a hydrosilylation reaction. This curable silicone resin composition is a temporary adhesive for wafer processing, which characteristically contains an organopolysiloxane that has in each molecule only one alkenyl group or only one silicon atom-bonded hydrogen atom (SiH group). It is thereby possible to provide a temporary adhesive for wafer processing, a wafer laminate, and a method for producing thin wafers using same, which support an improved productivity for thin wafers, wherein, inter alia, an adequate substrate retention is exhibited post-bonding even when a substrate with high level differences is used; a high process compatibility is exhibited with wafer backside grinding processes, TSV formation processes, and wafer backside wiring processes; facile peeling is exhibited in peeling processes even after passage post-bonding through a lengthy high-temperature heating process in air; and the residue on the substrate post-peeling exhibits an excellent cleanability.

A surface treatment composition of the present invention is a surface treatment composition that are supplied as a vapor to a surface of a wafer having an uneven pattern on the surface and used to form a water-repellent protective film on the surface, the surface treatment composition containing a silylating agent and a solvent, in which the silylating agent contains a trialkylsilylamine, the solvent contains at least one or more selected from the group consisting of glycol ether acetate and glycol acetate, and a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of a total amount of the solvent.

The invention relates to a solid-state battery production device, a solid-state battery production method and solid-state battery preparation equipment. The solid-state battery piece making device comprises a composite mechanism which comprises a pole piece unwinding assembly, a rubber frame unwinding assembly and a material belt composite assembly, and the pole piece unwinding assembly and the rubber frame unwinding assembly are both arranged on the upstream of the material belt composite assembly; and the flaking mechanism comprises a tab cutting assembly and a cutting assembly, the tab cutting assembly is arranged at the downstream of the material belt compounding assembly, and the cutting assembly is arranged at the downstream of the tab cutting assembly. Therefore, the material belt compounding assembly is used for compounding the pole piece material belt and the rubber frame material belt, then the pole lug cutting assembly is used for cutting the composite material belt to form the pole lug, and the cutting assembly is used for cutting off the composite material belt to form the pole piece material, so that the situation that the pole piece, the solid electrolyte layer and the rubber frame are independently cut and flaked is avoided, and the flaking efficiency is improved; and therefore, the production efficiency of the whole machine is improved, and the capacity requirement is better met.

The invention discloses a permanent magnet water pump system for wafer manufacturing temperature control equipment and a control method, and belongs to the technical field of semiconductor manufacturing. The system comprises a permanent magnet synchronous motor, a magnetic coupler, an impeller, a pump cavity and a controller. The magnetic coupler achieves non-contact torque transmission through the driving half shaft, the driven half shaft and the isolation sleeve, heat conduction is isolated, and motor parameters are prevented from being affected by temperature. The controller estimates magnetic coupling angle deviation by utilizing a nonlinear elastic angle-torque relation based on a position-sensorless algorithm, realizes high-precision rotor angle estimation in combination with current information, and has intelligent protection functions of slipping, locking, idling and the like. The problems that a traditional alternating current asynchronous motor is narrow in speed regulation range and poor in low-speed load and a permanent magnet motor parameter temperature excursion are solved, and the alternating current asynchronous motor has the advantages of being wide in speed range, high in precision, high in reliability, high in adaptability and the like and is suitable for high-cleanliness and high-precision temperature control scenes in wafer manufacturing.

The present invention provides a wafer manufacturing method that reliably forms a separation layer capable of discharging gas generated inside the workpiece in the outer peripheral region of the workpiece, while reducing the power of the laser beam irradiated during the formation of the separation layer. [Solution] A wafer manufacturing method comprises a holding step S1 of holding an ingot 11; a first separation layer formation step S2 of forming a separation layer 15 in the outer peripheral region of the ingot 11 by irradiating the outer peripheral region of the ingot 11 with a laser beam; a second separation layer formation step S3 of forming a separation layer 15 in the inner region of the ingot 11 by irradiating the inner region of the ingot 11 with a laser beam; and a separation step S4 of separating the wafer W from the ingot 11. The first separation layer formation step S2 includes an inner processing step S21 of forming a separation layer 15 at an inner position in the outer peripheral region, and an outer processing step S22 of forming a separation layer 15 at a position outside the inner position.

A processing apparatus includes a chuck table configured to hold a wafer and rotate on a chuck shaft; a processing mechanism to rotate a spindle, to which an annular processing tool is attached, and process the wafer with a lower surface of the processing tool; a process-feeding mechanism to lift or lower the processing mechanism; at least three load sensors arranged at equal intervals along a circle centered on a rotation axis of the spindle or the chuck table and configured to measure a force pressing the processing tool against the wafer; and a controller to control pressing of the processing tool against the wafer such that a sum of values from the load sensors corresponds to a set load and control a rotation speed of the spindle or the chuck shaft such that a ratio of the values from the load sensors is maintained at a set ratio.

The invention discloses a vacuum pump for semiconductor manufacturing, and relates to the technical field of semiconductor manufacturing, and the vacuum pump comprises a water tank, the top end of the water tank is provided with a driving motor, one end of the water tank close to the driving motor is provided with an exhaust pipe, the output end of the driving motor is in transmission connection with a pump body, the top end of the pump body is connected with a connecting pipe, and one end of the pump body is connected with an air inlet; according to the air pipe, external heating air is added along the air pipe body, so that the external heating air can circularly flow in the air circulating pipe, heating is achieved after electrification through the heating wire in the sleeving ring, drying and heating of the air inlet are achieved, and the air inlet is heated through the heating wire in the sleeving ring. According to the vacuum pump for semiconductor manufacturing, solid dust is prevented from entering the pump body to cause blockage and influence on normal use, dust accumulation in the pump body is prevented from occurring easily, and rapid treatment of the vacuum pump for semiconductor manufacturing on various vacuum process chamber gases in the whole process of wafer manufacturing, chip packaging testing and the like can be improved.

The application discloses a kind of surface self-cleaning spray disc automation spraying device, the present application relates to the technical field of injection device, the spraying device includes box, general control module, heating module, handling mechanical arm, coating mechanism, rotating mechanism and chuck, cabinet door and rotating hole are equipped on the box, coating mechanism includes three-axis displacement module and cleaning mechanism, rotating mechanism includes bottom column and driving motor, cabinet door is equipped with two groups, general control module, heating module, handling mechanical arm, three-axis displacement module, base, driving motor are all fixedly connected with the box, chuck is fixedly connected with handling mechanical arm, bottom column is rotatably connected with rotating hole, heating module, handling mechanical arm, coating mechanism, driving motor are all connected with general control module by electric signal;The application automatically coats glue and develops wafer, and millisecond level is covered by developing solution, avoids line width deviation and large droplet impact wafer to destroy pattern, avoids developing spot and comet tail defect, improves wafer manufacturing precision.

This application relates to an apparatus and method for mass production of large-size polycrystalline diamond wafers, belonging to the field of diamond wafer fabrication technology. An apparatus for mass production of large-size polycrystalline diamond wafers includes: a reaction chamber, reaction components, and a second heating filament assembly. The reaction component includes a first heating filament assembly and a substrate stage. Multiple sets of reaction components are spaced horizontally within the reaction chamber. The axes of the first and second heating filament assemblies are both vertically oriented. The axis of the substrate stage is horizontally oriented. The first and second heating filament assemblies are parallel to the substrate stage. The substrate stage includes a fixing ring, which includes an annular mounting portion in the middle along the axial direction for securing the peripheral wall of the substrate. Annular eaves are located on both sides of the annular mounting portion along the axial direction of the fixing ring. This method can produce diamonds more uniformly and in larger quantities, improving the problem of diamond warping and even cracking.

To suppress the consumption of a grinding wheel in grinding a wafer having a peeling layer and an ingot having the peeling layer when manufacturing the wafer from the ingot.SOLUTION: A method of manufacturing a wafer 10 includes a peeling layer forming step S10 of forming a peeling layer 110, a peeling step S11 of peeling the wafer 10, and a polishing step S12 of polishing and planarizing a peeling surface 120 of the wafer 10 to remove the peeling layer 110. The processing step S12 includes a first processing step S13 of relatively moving the holding table 204 holding the wafer 10 and the processing unit 210 in a first processing feed direction parallel to the holding surface 204a to grind the wafer 10, and a second processing step S14 of holding the wafer 10 on the holding table 204 and relatively moving the holding table 204 and the processing unit 210 in a second processing feed direction perpendicular to the holding surface 204a to grind the wafer 10 after the first processing step LA. S13.SELECTED DRAWING: Figure 1

A wafer manufacturing apparatus includes an ingot grinding unit for grinding an upper surface of an ingot to planarize the upper surface of the ingot, a laser applying unit for forming peel-off layers in the ingot at a depth therein, which corresponds to the thickness of a wafer to be produced from the ingot, from the upper surface of the ingot, a wafer peeling unit for holding the upper surface of the ingot and peeling off a wafer from the ingot at the peel-off layers, a tray having an ingot support portion and a wafer support portion, and a belt conveyor unit for delivering the ingot supported on the tray between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

This invention provides a grinding wheel, a grinding apparatus, and a wafer manufacturing method. The grinding wheel includes a main body and a grinding part. The top surface of the grinding part is a plane perpendicular to the axis of the main body. The bottom surface of the grinding part has a first grinding surface inclined away from the top surface and a second grinding surface inclined towards the top surface, with one end connected to the first grinding surface. The other end of the second grinding surface is connected to the main body. The distance from the end of the first grinding surface near the main body to the top surface of the grinding part is greater than the distance from the end of the second grinding surface near the main body to the top surface of the grinding part. The first grinding surface has a first acute angle with a reference plane, and the second grinding surface has a second acute angle with the reference plane, the second acute angle being smaller than the first acute angle. The reference plane is perpendicular to the axis of the main body. The grinding wheel is used to grind the wafer in the wafer manufacturing process to achieve edge removal. The application of the grinding wheel can improve the edge quality of the manufactured wafer.

Provided is a method for evaluating the crystallinity of a 3C-SiC film heteroepitaxially grown on a single crystal silicon substrate, the method being characterized in that the crystallinity of the 3C-SiC film is evaluated on the basis of the WARP value using the heteroepitaxial wafer and the stress value applied to the substrate obtained using the Stokes equation. And determining the crystallinity of the 3C-SiC film of the heteroepitaxial wafer. As a result, the crystallinity of a 3C-SiC film heteroepitaxially grown on a single crystal silicon substrate can be evaluated easily and non-destructively without requiring wafer processing work.

To provide a temporary fixing composition capable of reducing resin residue on a wafer.SOLUTION: A temporary fixing composition comprising a polymerizable ingredient (A) containing a (meth) acrylate compound, a photoradical polymerization initiator (B), and a UV absorber (C), wherein the UV absorber (C) contains a benzotriazole-based UV absorber (C1) having a benzotriazole ring, a heteroatom-containing functional group, a polymerizable functional group, and an aliphatic hydrocarbyl group having 4 to 30 carbon atoms.SELECTED DRAWING: None

The application provides a wafer cassette replacing device, which comprises a supporting structure, a first supporting table and a second supporting table arranged on the supporting structure. A push piece unit is arranged below the first supporting table, which is used for pushing a wafer in a first wafer cassette upwards out of the first wafer cassette. A grabbing and moving unit for grabbing the wafer pushed out by the push piece unit is further arranged on the supporting structure, which is further used for conveying the grabbed wafer to an upper position of a second wafer cassette. A receiving unit is further arranged below the second supporting table, which can be extended upwards to the upper position of the second wafer cassette to receive the wafer grabbed by the grabbing and moving unit; the receiving unit is further used for moving downwards to place the received wafer in the second wafer cassette after receiving the wafer. The automation degree in the wafer manufacturing process is improved, and the wafer cassette misloading accidents caused by the operator's mistake in the manual replacing process are prevented.

This application discloses a fabrication process for a secondary-bonded lithium tantalate composite substrate and a flexible lithium tantalate composite substrate, belonging to the field of flexible ultrathin lithium tantalate wafer fabrication technology. The process includes the following steps: (1) ion implantation of a lithium tantalate wafer and pre-annealing of a substrate wafer; (2) activation and bonding of the implantation surface of the lithium tantalate wafer and the substrate wafer to obtain a first bond, and thinning the lithium tantalate wafer of the first bond to a thickness of 2-50 μm; (3) secondary bonding of the lithium tantalate wafer of the first bond to a flexible substrate to obtain a second bond; (4) annealing and peeling of the second bond to obtain a flexible lithium tantalate composite substrate and a heterogeneous thin-film bonded substrate. This method achieves permanent bonding between an ultrathin lithium tantalate wafer and a flexible substrate through a two-step bonding process, transforming the lithium tantalate wafer from a "fragile thin sheet" into a practical, integrable, and flexible lithium tantalate composite substrate suitable for flexible devices.

The invention relates to a self-cleaning method for semiconductor etching equipment. The method comprises the following steps: carrying out first cleaning on an etching cavity in the presence of a first cleaning gas mixture; and performing second cleaning on the etching cavity in the presence of a second cleaning gas mixture, wherein the first clean gas mixture and the second clean gas mixture are gas mixtures containing NF3 and O2 respectively, and the flow ratios of NF3 and O2 in the first clean gas mixture and the second clean gas mixture are different. According to the method disclosed by the invention, more efficient cavity self-cleaning can be realized, the cleaning effect in the wafer manufacturing process is improved, the cost is saved, and the production efficiency and the product yield are improved.

The present application relates to the technical field of semiconductor manufacturing, in particular to a semiconductor wafer manufacturing closed-loop control method, system, device and medium based on OODA cycle; by constructing a unified semantic system adapting to multiple manufacturer equipment and multiple processes, accurate mapping of original data to business semantics is realized, and data islands are broken; by establishing an event-driven real-time sensing mechanism, combined with edge computing technology, the abnormal response time is reduced from hours to minutes; by configuration deployment technology, the landing cycle of process optimization scheme is shortened, different manufacturer equipment and process nodes are adapted, and the overall optimization of wafer manufacturing process is realized, and the efficiency, yield and safety of wafer manufacturing are improved.