Wafer clamp, semiconductor equipment and electroplating method

By setting an air intake structure in the wafer fixture, the external non-electroplated surface of the wafer is dried using an air source, which solves the problem of electroplating solution penetrating and corroding the wafer, and achieves high-quality electroplating effect and equipment protection.

CN121006590AActive Publication Date: 2025-11-25JIANGSU WUXI JINGWEI TIANDI SEMICONDUCTOR TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202511544480.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-10-28
Publication Date
2025-11-25
Estimated Expiration
2045-10-28

AI Technical Summary

Technical Problem

During the electroplating process, the electroplating solution may seep into the fixture through the contact interface between the wafer and the sealing ring, corroding the annular side and back of the wafer. This problem is particularly significant in long-term electroplating processes.

Method used

A wafer fixture is used, including a base, a sealing ring and a pressure head. By setting an air intake structure on the non-electroplated surface of the wafer, an air source is used to dry these surfaces before electroplating, avoiding the formation of through liquid channels and preventing electroplating solution penetration.

Benefits of technology

It effectively prevents the plating solution from corroding the outer non-plating areas of the wafer during long-term plating, improves plating quality, protects fixtures and seals, extends equipment maintenance cycles, and increases production efficiency.

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Abstract

The invention relates to the technical field of wafer manufacturing, and discloses a wafer clamp, semiconductor equipment and an electroplating method. The wafer clamp comprises a base, a sealing ring and a pressure head; the base is annular, the sealing ring is installed on the base, the pressing head can cover the base and exert sealed external pressure on the back face of the wafer so that the wafer can abut against the sealing ring, and at the moment, an annular space is formed between the base and the pressing head. The external non-electroplating surface of the wafer limited by the outermost contact boundary defined by the pressing head and the sealing ring after the pressing head and the sealing ring are in contact with the wafer is located in the annular space; the wafer clamp is further provided with an air inlet structure, one end of the air inlet structure is communicated with an air source, the other end of the air inlet structure is communicated with the annular space, and the air inlet structure is used for blow-drying the external non-electroplating surface of the wafer before the wafer is electroplated. Even in an electroplating process with relatively long process time, the wafer clamp can effectively prevent electroplating liquid from entering the wafer clamp, so that the non-electroplating surface outside the wafer is prevented from being corroded; and the clamp and the sealing ring are prevented from being polluted by electroplating liquid.
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