The invention provides a single-layer core-shell structure
polishing abrasive for
silicon carbide wafer polishing, a
polishing solution, a preparation method and a polishing method, and relates to the technical field of chemical mechanical polishing, the single-layer core-shell structure polishing
abrasive takes
silicon dioxide with the particle size of 300-800 nm as an inner core and aluminum
oxide with the particle size of 10-150 nm as an outer shell, the
particle size ratio of the inner core to the outer shell is 2: 1-10: 1, and the polishing solution is prepared from
silicon dioxide with the particle size of 300-800 nm and aluminum
oxide with the particle size of 10-150 nm. And single-layer
coating is realized through cationic
polyelectrolyte assisted
electrostatic adsorption. The polishing solution comprises the following components in parts by weight: 3-15 parts of a polishing
abrasive with a single-layer core-shell structure, 0.2-8 parts of an
oxidizing agent, 0.1-8 parts of a dispersing agent and the balance of deionized water, and the pH value is adjusted to 8-11. The
hardness of the inner core abrasive material of the prepared polishing abrasive material with the core-shell structure is smaller than that of the outer shell abrasive material, the polishing abrasive material with the core-shell structure has high
dispersity and low agglomeration rate, in the final polishing process of SiC wafers, the
surface roughness Ra smaller than or equal to 0.15 nm can be obtained, meanwhile, the
material removal rate is kept to be larger than or equal to 1500 nm / h, the scratch density is remarkably reduced, and the polishing abrasive material is suitable for batch finish
machining of high-end power device substrates.