4071results about "Lapping machines" patented technology

The embodiment of the utility model provides a polishing head and polishing equipment. The polishing head comprises a base, a polishing head and a driving device, the retaining ring is arranged below the base; the polishing head gas film is arranged on the base, is arranged on the inner side of the retaining ring and is used for fixedly holding the wafer; the retaining ring gas film is arranged on the inner side of the retaining ring and is arranged between the retaining ring and the polishing head gas film, the retaining ring gas film is in contact with the edge of the wafer when the retaining ring gas film is pressurized and expanded so as to apply acting force to the edge of the wafer, and the acting force forms radial clamping force and axial downward pressure on the edge of the wafer. Radial clamping force and axial downward pressure are applied to the edge of the wafer through the retaining ring gas film, the wafer can be clamped through the radial clamping force, the wafer is prevented from moving in the polishing process, and the risk of wafer sliding is reduced; the axial downward pressure can apply pressing force to the edge of the wafer in the wafer polishing process, the polishing effect of the edge of the wafer can be controlled more accurately, and the polishing consistency of the surface of the whole wafer is guaranteed.

The invention provides a wafer film thickness measuring method and device and chemical mechanical polishing equipment, the wafer film thickness measuring method comprises the following steps: a measuring spectrum and an interference spectrum are obtained, the measuring spectrum is formed by measuring light, and the interference spectrum is formed by reflected light after the measuring light is reflected by a wafer; calculating a correction coefficient according to the measured spectrum, and correcting the interference spectrum according to the correction coefficient; calculating a reflectivity curve of the wafer according to the corrected interference spectrum; and determining the film thickness of the wafer according to the reflectivity curve. According to the wafer film thickness measurement method, the influence of measurement noise on an interference spectrum is eliminated, the control precision of the wafer surface quality is improved, and the chip manufacturing yield is further improved.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

The invention discloses grinding and polishing equipment for a ball valve element and a machining method of the grinding and polishing equipment, and belongs to the technical field of ball valve element machining. According to the technical scheme, the grinding and polishing equipment is characterized by comprising a supporting frame and further comprising a placement assembly, and the placement assembly comprises a lifting frame, a lifting device, a placement disc, a supporting shaft and rolling wheels; the grinding device comprises a first rotating shaft, a rotating frame, a universal shaft, a grinding disc, a grinding frame, a first electric telescopic rod and a second grinding piece, the universal shaft is installed on the rotating frame, the grinding disc is installed on the rotating shaft, the grinding frame is installed on the supporting frame, the first electric telescopic rod is installed on the grinding frame, and the second grinding piece is installed on the first electric telescopic rod. According to the grinding device, the outer surface of the valve element of the ball valve and the inner wall of the middle round hole can be ground at the same time, the grinding disc in the grinding device can grind the outer surface of the valve element, the second grinding piece can go deep into the round hole to conduct synchronous treatment on the inner wall, the grinding time is greatly shortened, and the working efficiency is remarkably improved.

The invention relates to the technical field of three-step fine polishing methods for 19nm wafer regeneration, discloses a fine polishing method named'three-step fine polishing method for 19nm wafer regeneration ', and aims to solve the technical contradiction between macroscopic planarization and microscopic surface integrity of regenerated wafers in advanced process nodes. The method is characterized by comprising a first fine polishing step, a second fine polishing step and a third fine polishing step, and in each step, gradient decreasing polishing pad hardness, abrasive particle size and concentration, polishing pressure and pH value are adopted; and an on-line process monitoring and self-adaptive feedback control subsystem is used for assistance. By adopting the technical scheme, defects can be efficiently removed, damage can be repaired step by step, the wafer surface with ultralow defect density and excellent chemical stability is obtained, the requirements of the manufacturing process of 19nm and more advanced semiconductors are met, and the yield is increased.

The invention provides a wafer post-processing device, a bearing unit, an overturning method and processing equipment, the wafer post-processing device comprises a controller and a wafer bearing unit, and the wafer bearing unit comprises a bearing bracket, a detection assembly and an adjusting assembly; the bearing bracket comprises a turnover main body, a fixedly mounted upper limiting piece and a movably mounted lower limiting piece, and the lower limiting piece can be close to or far away from the center of the main body; the detection assembly is used for detecting the inclination angle of the wafer; the adjusting assembly is arranged on the main body and is used for supporting the wafer upwards so as to adjust the wafer to a horizontal state; the controller is configured to control the main body to turn over to a horizontal state, control the detection assembly to detect the inclination angle of the wafer, control the adjusting assembly to support the wafer according to the inclination angle, control the lower limiting piece to be away from the center of the main body, control the adjusting assembly to adjust the wafer to a horizontal state, and control the lower limiting piece to be close to the center of the main body. According to the invention, the overturned and inclined wafer can be leveled, and the wafer cannot be polluted and the limiting piece cannot be damaged.

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

The invention discloses a grinding and polishing processing method of an ultra-precise YIG (yttrium iron garnet) single crystal, which is suitable for a planar YIG (yttrium iron garnet) single crystal (circle) prepared by a liquid phase epitaxy method, a molten salt method and a floating zone melting method, and comprises the following steps: grinding the YIG single crystal, and controlling the thickness and the total thickness deviation (TTV) of the crystal; rough polishing is carried out on the YIG single crystal, and subsurface damage of the wafer is eliminated; and finally, carrying out ultra-precision polishing on the YIG crystal to realize surface planarization with sub-nano-scale surface roughness. According to the method, the surface roughness of the yttrium iron garnet single crystal can be controlled below 1nm.

The invention relates to the technical field of precision machining, discloses a double-shaft DFG grinding machine Z1-Z2 linkage removal amount control and grinding wheel loss optimization method and system, and aims to solve the problems of unreasonable Z1-Z2 removal amount distribution, inaccurate grinding wheel loss control and poor wafer surface damage adaptability of existing DFG grinding. According to the method and system, Z1 rough grinding parameters are determined and adjusted through multi-objective optimization and self-adaptive control by means of the initial morphology and material characteristics of a wafer; in combination with a Z1 result, a deep learning model is utilized to intelligently distribute Z2 accurate grinding removal amount and parameters, and adaptive adjustment and abnormal Air Cut are realized; and meanwhile, the grinding parameters are continuously optimized by adopting the grinding wheel loss prediction model. By adopting the technical scheme, the grinding efficiency and precision can be remarkably improved, the service life of the grinding wheel is prolonged, the cost is reduced, and the problems of removal amount distribution, grinding wheel loss and wafer damage are solved.

The invention provides an epitaxial wafer edge morphology compensation type wafer double-sided polishing device and method, and belongs to the technical field of semiconductor wafer ultra-precision machining. The polishing main machine comprises an upper fixed disc, a lower fixed disc and a wafer driving mechanism; the pressure loading system is used for applying adjustable pressure to the fixed disc; the polishing solution supply system is used for conveying a flow-adjustable polishing solution to the processing interface; the central control unit is in communication connection with the two systems and executes edge morphology compensation control logic, specifically, the machining pressure is adjusted in a segmented mode, and the flow of the polishing solution and the pressure are subjected to coupling change. According to the method, the atomic level flatness of the wafer surface is ensured, the edge morphology is accurately controlled, the edge thickening of the epitaxial layer is perfectly counteracted, and the photoetching yield of high-end chip manufacturing is remarkably improved.

The invention discloses a UPA pressure automatic compensation system and method for mask substrate polishing. The UPA pressure automatic compensation system comprises a pressure execution module, a distributed sensing feedback network and an intelligent control unit. Wherein the pressure execution module is used for directly polishing a mask base plate and comprises a force application shaft, a polishing head, an air source, a UPA air bag and an electric proportional valve, the distributed sensing feedback network comprises an air path pressure sensor and a tail end contact pressure sensor, and the intelligent control unit receives a collection signal of the distributed sensing feedback network and sends the collection signal to the polishing head. On the basis of a current process formula and process parameter coupling model, a data fusion algorithm, a feed-forward compensation algorithm and a fuzzy PID algorithm are operated to obtain a feed-forward compensation amount and a fuzzy PID output amount, the feed-forward compensation amount and the fuzzy PID output amount are superposed, a total control voltage is generated and output to an electric proportional valve, and then the input air pressure of a UPA air bag is adjusted. Therefore, closed-loop control over the polishing pressure of the mask substrate is achieved. Through multi-sensor data fusion, fuzzy PID self-adaptive control and intelligent feed-forward compensation based on a process parameter coupling model, real-time, accurate and constant control of the polishing pressure is realized, so that the surface precision and yield of the mask substrate are improved.

The utility model discloses a polishing protection device and a chemical mechanical polishing system, and the polishing protection device comprises a check ring with an annular structure, which is arranged on the peripheral side of a polishing disk; the fixed end of the lifting assembly is connected to a base of the polishing system, and the movable end of the lifting assembly is connected to the check ring so as to drive the check ring to move in the vertical direction; the lifting assembly is provided with a protective sleeve so as to prevent polishing waste liquid from entering the lifting assembly.

The invention relates to the technical field of semiconductor manufacturing, and provides wafer thinning equipment and a wafer thinning process. The wafer thinning equipment comprises a plurality of grinding discs, a functional assembly and a slicking assembly; two functional assemblies are correspondingly arranged on the grinding face of each grinding disc, and two grinding areas are formed between the two functional assemblies. The functional assembly is used for cleaning the grinding area and spraying grinding fluid; the slicking assembly penetrates through the grinding areas of the multiple grinding discs and is used for dispersing grinding fluid. The functional assembly is arranged corresponding to the grinding disc, the grinding fluid in the grinding area of the grinding disc can be cleaned, and the grinding fluid is sprayed again, so that wafer grinding particles can be cleaned, and the purity of the grinding fluid is ensured; and meanwhile, by arranging the slicking assembly, the grinding fluid can be uniformly dispersed before the grinding fluid is in contact with the wafer, so that local aggregation of the grinding fluid is avoided, the stress concentration problem is prevented, the wafer cannot be scratched, and the grinding precision is guaranteed.

The invention provides a system and method for inhibiting wafer scratching in double-sided polishing and double-sided polishing equipment. The system comprises: a shunt manifold valve group, which shunts a polishing liquid main flow path into at least three independent branches respectively corresponding to the inner, middle and outer areas of a polishing pad; the at least three online heating units are respectively arranged on each branch to independently heat the polishing solution; the temperature monitoring device comprises at least three temperature sensors which are arranged in different areas and is used for monitoring the temperature of the three areas in real time; and the control system independently regulates and controls the power of each heating unit based on temperature feedback, a preset non-uniform radial temperature gradient is established and maintained on the polishing pad, and the gradient is configured that the temperature of the middle area is not lower than that of the inner area, and the temperature of the inner area is higher than that of the outer area. Thermal deformation of the polishing pad is optimized through partitioned independent temperature control, and wafer scratching is effectively restrained.

The invention relates to a chemical mechanical polishing method, a chemical mechanical polishing control device and a chemical mechanical polishing control system. The chemical mechanical polishing method is used for grinding and polishing a semiconductor wafer. The method comprises the steps that based on a prediction model, target parameters are obtained, and the target parameters represent the relation between the predicted polishing thickness and polishing duration of a to-be-polished layer on the semiconductor wafer; in the same preventive maintenance period, in response to the fact that the current batch of polishing is the first batch of polishing, obtaining the predicted first batch of polishing duration based on the target parameter and the target polishing thickness of the first batch of polishing; and on the basis of the predicted first-batch polishing duration, performing chemical mechanical polishing treatment on the to-be-polished layer in the semiconductor wafer. According to the method, the target parameter is constructed, the target parameter is predicted through the prediction model to obtain the predicted first-batch polishing duration, the requirement for pilot production can be reduced or even eliminated, and therefore time and labor consumption is reduced.

The invention provides a polishing method. A semiconductor structure comprises a substrate, and gettering layers are formed on the front face and the back face of the substrate at the same time. Obtaining the initial bending degree and the initial warping degree of the semiconductor structure; and executing at least one chemical mechanical polishing process, and after each chemical mechanical polishing process, obtaining the bending degree variation and the warping degree variation of the semiconductor structure in real time until the bending degree variation and the warping degree variation of the semiconductor structure reach the preset bending degree variation and the preset warping degree variation. According to the method, in the multiple chemical mechanical polishing technological processes, the removal degree of the front gettering layer of the substrate is judged by monitoring changes of the bending degree and the warping degree of the semiconductor structure. And when the bending variation and the warping variation of the semiconductor structure reach preset values, the front gettering layer of the substrate is completely removed, and in the step-by-step polishing process, the chemical mechanical polishing process is timely stopped according to real-time monitoring data calculation, so that the front gettering layer of the substrate is effectively removed, and the over-polished substrate is reduced.

Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

The invention discloses a method for controlling CMP (chemical mechanical polishing) dish-shaped pits, corrosion pits and interface corrosion of ruthenium barrier layer copper wiring, which is suitable for a manufacturing process of integrated circuits of 14 nanometers and below. According to the method, a specifically synthesized TTAK corrosion inhibitor is introduced into a polishing solution system, the oriented adsorption characteristic of the molecular structure of the TTAK corrosion inhibitor is utilized, the corrosion reaction of copper is selectively inhibited, meanwhile, the normal material removal efficiency of a ruthenium barrier layer and a TEOS dielectric layer is maintained, and cooperative regulation and control of the removal rate of the Cu / Ru / TEOS material are achieved. By means of the method, dished pits, corrosion pits and Fang type interface defects generated in the fine polishing and barrier layer polishing process can be effectively eliminated, and copper / ruthenium interface corrosion is improved. According to the method, the global planarization quality of the copper interconnection ruthenium barrier layer is remarkably improved, the interface bonding strength and the electrical reliability of an interconnection circuit are enhanced, and an effective solution is provided for performance optimization of an advanced process integrated circuit device.

The invention relates to the technical field of semiconductors, in particular to a device and a method for automatically adjusting the depth of a groove of a 12-inch wafer polishing pan head, and aims to solve the problem that in the prior art, due to fluctuation of the initial thickness of a to-be-processed wafer, the thickness of the to-be-processed wafer is influenced. The polishing process adaptability is poor; the production efficiency is low; and the consistency of the polishing quality is difficult to control. The device comprises an online thickness measuring module, an adjustable groove polishing head module and a system control unit. The polishing head module is internally provided with a flexible hinge coupling type annular segmented array, a micro-drive actuator, a displacement sensing feedback network and a magnetorheological fluid damping locking system. According to the method, the initial thickness of a wafer is measured in a high-precision mode, the depth of a groove is calculated and adjusted in a feedforward mode, accurate execution and locking are achieved, and collaborative polishing and process dynamic compensation are carried out. According to the invention, accurate, rapid and spatially distinguished automatic adjustment of the groove depth of each wafer can be realized, and the automation level, the processing efficiency and the product quality of the polishing process are remarkably improved.

The invention relates to the technical field of semiconductor material precision machining, and discloses a 12-inch silicon wafer double-sided polishing upper and lower surface removal amount monitoring system and method, and the system comprises a macroscopic thickness monitoring unit, a microcosmic contact state decoupling sensing unit and a data processing controller. The method comprises the following steps: synchronously acquiring a total thickness signal of a silicon wafer, an acoustic emission signal of an upper / lower fixed disc side and a fluid dynamic pressure signal; the method comprises the following steps: constructing a lubrication state correction coefficient by utilizing fluid dynamic pressure, and carrying out nonlinear correction on a mechanical friction energy index extracted by acoustic emission to obtain an effective vector removal index representing real cutting capacity; and the removal distribution ratio of the upper surface and the lower surface is calculated, and the independent absolute removal amount of the upper surface and the lower surface is obtained through decoupling in combination with the total thickness variation. According to the method, by eliminating the interference of a fluid'water cushion effect 'on a friction signal, visualization and closed-loop feedback control of a single-face removal behavior in the double-face polishing process are achieved, and the problem of silicon wafer warping caused by removal asymmetry is effectively solved.

To provide a buff polishing emulsion composition and the like excellent in polishing and finishing properties.SOLUTION: The present invention is a buff polishing emulsion composition containing water, lubricating oil, an organic solvent, abrasive particles, and a surfactant, wherein the abrasive particles include tin(IV) oxide particles (A) with an average particle diameter of 1.2 to 1.6 μm and tin(IV) oxide particles (B) with an average particle diameter of 0.5 to 0.9 μm. The total content of tin(IV) oxide particles (A) and tin(IV) oxide particles (B) in the buff polishing emulsion composition is 5 to 10 wt.%, and the content ratio of tin(IV) oxide particles (A) to tin(IV) oxide particles (B) is 5:5 to 8:2 by weight. The organic solvent includes an isoparaffinic hydrocarbon.SELECTED DRAWING: None

The invention relates to a polishing performance evaluation method and device and a polishing system for improving the polishing performance. The polishing performance evaluation method comprises the steps that the track lengths of all abrasive particles of a polishing disc are obtained; based on the track lengths of all the abrasive particles, calculating to obtain a track average value and a variance; and based on the trajectory average value and the variance, trajectory distribution uniformity is obtained through calculation. The wafer polishing device has the advantages that the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that the wafer polishing uniformity can be improved, the polishing time is shortened, and the polishing efficiency is improved; the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that uneven abrasion of the polishing pad unit can be avoided, the service life of the polishing pad unit is prolonged, and the cost is reduced.

The invention relates to the field of food packaging and coatings, and provides a bio-based fluoride-free environment-friendly oil-proof agent for food packaging paper and paperboards, which is simple in preparation process, green and environment-friendly and has the bio-based raw material proportion of 70% or above. The bio-based fluoride-free environment-friendly oil-proof agent is characterized in that the bio-based fluoride-free environment-friendly oil-proof agent is prepared by synergistic micro-nanocrystallization of paper pulp fibers, starch and inorganic particles under the action of high-speed shearing and grinding; the prepared oil-proof agent can be coated on the surfaces of sized or unsized paper, paperboards and paper pulp molded products by a conventional coating method, the coated finished product has good oil-proof performance, the coating weight is 1.5-15g / m < 2 >, and the oil-proof grade tested by a Kit method after drying can reach 12 grade to the maximum. Compared with a fluoride-free oil-proof agent on the market at present, the bio-based fluoride-free environment-friendly oil-proof agent disclosed by the invention can obtain good oil-proof performance under a relatively low coating weight, is biodegradable and is easy to recycle and reuse.

The invention discloses a screen display glass edge grinding device which comprises a grinding seat and grinding wheels, a glass inlet is formed in the grinding seat, the grinding seat comprises a seat body, an air knife seat body and a water knife seat body which form a grinding cavity, and the grinding wheels are vertically inserted into the grinding cavity. The air knife seat body comprises an upper air knife and a lower air knife which blow the grinding wheel and are distributed in an arc shape around the circle center of the grinding wheel; the water jet cutter seat body comprises a water jet cutter and a waste collecting module. On one hand, the closed grinding section is formed between the upper and lower arc-shaped air knives and the grinding wheel, fluid is flushed out through the water jet cutter, waste generated by grinding is flushed out of the grinding section along with rotation of the grinding wheel, the probability that fine dust escapes outwards and is secondarily attached to the surface of glass is effectively reduced, and the collection rate of the waste is improved; and on the other hand, based on cooperation of the main collecting branch and the auxiliary collecting branch, waste rushed out of the second end is shunted and gently collected, the splashing and accumulation phenomena generated when the waste impacts the inner wall of the grinding cavity are effectively reduced, the cleaning frequency is remarkably reduced, and the grinding efficiency is improved.

Provided is an information processing device including an information acquisition section that acquires substrate polishing information including measured temperature distribution information indicating a measured value of a temperature distribution of a polishing surface when a polishing process for polishing a substrate with the polishing surface of a polishing pad is performed by a substrate polishing device and device state information indicating a device state of the substrate polishing device, and an information generation section that inputs the substrate polishing information acquired by the information acquisition section into a learning model to generate polishing surface temperature control information indicating a control amount of a polishing surface temperature adjustment section when a polishing process is performed by the substrate polishing device. The learning model is a trained model that has learned a correlation between the substrate polishing information and the polishing surface temperature control information by machine learning.

The invention discloses a double-face grinding machine, and relates to the technical field of grinding machines, the double-face grinding machine comprises a machine shell, and the upper surface of the machine shell is fixedly connected with a supporting column; the recognition device is arranged on the outer side surface of the supporting column and used for recognizing the position and angle of the material in real time; the fixing block is mounted on the upper surface of the supporting column and used for supporting a part; the pressure regulation and control device is installed in the middle of the upper end of the machine shell and used for monitoring and regulating and controlling the grinding pressure in real time; the grinding device is arranged on the upper surface of the machine shell; through the arrangement of the recognition device, the pressure regulation and control device and the monitoring device, scanning of the material position and angle and monitoring of the pressure can be achieved, the feedback control system ensures that the machining precision is not affected by equipment vibration and temperature fluctuation, seamless connection with a grinding program and automatic operation are achieved, and the machining precision is improved. And the material grinding quality is improved.

The invention discloses a surface consistency processing method and system for semiconductor parts, and relates to the technical field of semiconductor manufacturing. The method comprises the steps that the thickness of a polishing pad, the depth of a groove, the pH value of grinding liquid and the concentration of grinding materials are uploaded, part surface features are synchronously collected, and a polishing state map is set; generating a compensation vector based on the map in combination with a precision demand; dynamically adjusting a standard polishing path according to the compensation vector, and determining M targets and N adjacent coordinates to form a region unit; and deploying a digital twinborn simulation rehearsal compensation scene, establishing a parameter adaptive mechanism in combination with reinforcement learning, and optimizing regional resource allocation. The technical problems that in the precise polishing process of semiconductor parts, due to traditional fixed path polishing, local polishing is uneven, and the surface consistency is poor are solved, self-adaptive adjustment and surface consistency optimization of area machining precision are achieved through dynamic polishing compensation based on digital twinning and reinforcement learning, and the precision of the semiconductor parts is improved. And the surface appearance uniformity and the polishing efficiency of the part are improved.

The invention discloses a spindle posture regulation and control method and system and a thinning machine. The main shaft attitude regulation and control method comprises the following steps of: obtaining fullness and concave-convex degree of a wafer to be reached; determining a first adjusting parameter of a posture adjusting mechanism connected to a first position of a supporting disc of the main shaft according to the concave-convex degree; adjusting a posture adjusting mechanism connected to the first position according to the first adjusting parameter; determining a second adjustment parameter of the posture adjustment mechanism connected to the second position of the supporting disc and a compensation parameter of the posture adjustment mechanism connected to the first position according to the plumpness; adjusting the posture adjusting mechanism connected to the second position according to the second adjusting parameter and adjusting the posture adjusting mechanism connected to the first position according to the compensation parameter. According to the method disclosed by the invention, the main shaft is connected with the plurality of posture adjusting mechanisms, so that the posture of the main shaft can be automatically adjusted through the posture adjusting mechanisms to meet the actual processing requirement when the wafer with specific fullness and concave-convex degree needs to be processed, and manual debugging is not needed.

A polishing liquid which reduces the occurrence of erosion and scratches on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished is provided. In addition, a chemical mechanical polishing method using the above-mentioned polishing liquid is provided. The polishing liquid is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film. The polishing liquid includes colloidal silica, an organic acid, a specific nitrogen-containing aromatic heterocyclic compound and hydrogen peroxide, and has a pH of 8.5 to 12.

The invention discloses a guide bearing bush automatic grinding system and method based on multi-parameter cooperative control, and relates to the field of intelligent grinding of high-precision bearing parts. The system comprises a state sensing module, a rhythm analysis module, a stage identification module, a target weight adjustment module, a scheduling coordination module, a curved surface contact equalization module, a clamp thermal deformation compensation module, a regional energy integration module and an end point intelligent discrimination module. The self-adaptive frequency adjustment and priority scheduling of each control variable are realized by collecting pressure, temperature rise, displacement, vibration and microchip information in real time and calculating the change rate of the information; in combination with grinding stage identification and task target weight reconstruction, control strategy switching is optimized; and high-consistency morphology control is realized through pressure spectrum correction, thermal drift compensation and regional energy adjustment. The method has the advantages of being fast in dynamic response, high in control precision, intelligent in abnormal intervention and the like, and the grinding quality and production efficiency of the guide bearing bush are remarkably improved.