2845results about "Lapping machines" patented technology

The invention provides a wafer film thickness measuring method and device and chemical mechanical polishing equipment, the wafer film thickness measuring method comprises the following steps: a measuring spectrum and an interference spectrum are obtained, the measuring spectrum is formed by measuring light, and the interference spectrum is formed by reflected light after the measuring light is reflected by a wafer; calculating a correction coefficient according to the measured spectrum, and correcting the interference spectrum according to the correction coefficient; calculating a reflectivity curve of the wafer according to the corrected interference spectrum; and determining the film thickness of the wafer according to the reflectivity curve. According to the wafer film thickness measurement method, the influence of measurement noise on an interference spectrum is eliminated, the control precision of the wafer surface quality is improved, and the chip manufacturing yield is further improved.

The invention relates to the technical field of precision machining, discloses a double-shaft DFG grinding machine Z1-Z2 linkage removal amount control and grinding wheel loss optimization method and system, and aims to solve the problems of unreasonable Z1-Z2 removal amount distribution, inaccurate grinding wheel loss control and poor wafer surface damage adaptability of existing DFG grinding. According to the method and system, Z1 rough grinding parameters are determined and adjusted through multi-objective optimization and self-adaptive control by means of the initial morphology and material characteristics of a wafer; in combination with a Z1 result, a deep learning model is utilized to intelligently distribute Z2 accurate grinding removal amount and parameters, and adaptive adjustment and abnormal Air Cut are realized; and meanwhile, the grinding parameters are continuously optimized by adopting the grinding wheel loss prediction model. By adopting the technical scheme, the grinding efficiency and precision can be remarkably improved, the service life of the grinding wheel is prolonged, the cost is reduced, and the problems of removal amount distribution, grinding wheel loss and wafer damage are solved.

The invention provides an epitaxial wafer edge morphology compensation type wafer double-sided polishing device and method, and belongs to the technical field of semiconductor wafer ultra-precision machining. The polishing main machine comprises an upper fixed disc, a lower fixed disc and a wafer driving mechanism; the pressure loading system is used for applying adjustable pressure to the fixed disc; the polishing solution supply system is used for conveying a flow-adjustable polishing solution to the processing interface; the central control unit is in communication connection with the two systems and executes edge morphology compensation control logic, specifically, the machining pressure is adjusted in a segmented mode, and the flow of the polishing solution and the pressure are subjected to coupling change. According to the method, the atomic level flatness of the wafer surface is ensured, the edge morphology is accurately controlled, the edge thickening of the epitaxial layer is perfectly counteracted, and the photoetching yield of high-end chip manufacturing is remarkably improved.

The invention discloses a UPA pressure automatic compensation system and method for mask substrate polishing. The UPA pressure automatic compensation system comprises a pressure execution module, a distributed sensing feedback network and an intelligent control unit. Wherein the pressure execution module is used for directly polishing a mask base plate and comprises a force application shaft, a polishing head, an air source, a UPA air bag and an electric proportional valve, the distributed sensing feedback network comprises an air path pressure sensor and a tail end contact pressure sensor, and the intelligent control unit receives a collection signal of the distributed sensing feedback network and sends the collection signal to the polishing head. On the basis of a current process formula and process parameter coupling model, a data fusion algorithm, a feed-forward compensation algorithm and a fuzzy PID algorithm are operated to obtain a feed-forward compensation amount and a fuzzy PID output amount, the feed-forward compensation amount and the fuzzy PID output amount are superposed, a total control voltage is generated and output to an electric proportional valve, and then the input air pressure of a UPA air bag is adjusted. Therefore, closed-loop control over the polishing pressure of the mask substrate is achieved. Through multi-sensor data fusion, fuzzy PID self-adaptive control and intelligent feed-forward compensation based on a process parameter coupling model, real-time, accurate and constant control of the polishing pressure is realized, so that the surface precision and yield of the mask substrate are improved.

The utility model discloses a polishing protection device and a chemical mechanical polishing system, and the polishing protection device comprises a check ring with an annular structure, which is arranged on the peripheral side of a polishing disk; the fixed end of the lifting assembly is connected to a base of the polishing system, and the movable end of the lifting assembly is connected to the check ring so as to drive the check ring to move in the vertical direction; the lifting assembly is provided with a protective sleeve so as to prevent polishing waste liquid from entering the lifting assembly.

The invention relates to the technical field of semiconductor manufacturing, and provides wafer thinning equipment and a wafer thinning process. The wafer thinning equipment comprises a plurality of grinding discs, a functional assembly and a slicking assembly; two functional assemblies are correspondingly arranged on the grinding face of each grinding disc, and two grinding areas are formed between the two functional assemblies. The functional assembly is used for cleaning the grinding area and spraying grinding fluid; the slicking assembly penetrates through the grinding areas of the multiple grinding discs and is used for dispersing grinding fluid. The functional assembly is arranged corresponding to the grinding disc, the grinding fluid in the grinding area of the grinding disc can be cleaned, and the grinding fluid is sprayed again, so that wafer grinding particles can be cleaned, and the purity of the grinding fluid is ensured; and meanwhile, by arranging the slicking assembly, the grinding fluid can be uniformly dispersed before the grinding fluid is in contact with the wafer, so that local aggregation of the grinding fluid is avoided, the stress concentration problem is prevented, the wafer cannot be scratched, and the grinding precision is guaranteed.

The invention provides a system and method for inhibiting wafer scratching in double-sided polishing and double-sided polishing equipment. The system comprises: a shunt manifold valve group, which shunts a polishing liquid main flow path into at least three independent branches respectively corresponding to the inner, middle and outer areas of a polishing pad; the at least three online heating units are respectively arranged on each branch to independently heat the polishing solution; the temperature monitoring device comprises at least three temperature sensors which are arranged in different areas and is used for monitoring the temperature of the three areas in real time; and the control system independently regulates and controls the power of each heating unit based on temperature feedback, a preset non-uniform radial temperature gradient is established and maintained on the polishing pad, and the gradient is configured that the temperature of the middle area is not lower than that of the inner area, and the temperature of the inner area is higher than that of the outer area. Thermal deformation of the polishing pad is optimized through partitioned independent temperature control, and wafer scratching is effectively restrained.

The invention relates to a chemical mechanical polishing method, a chemical mechanical polishing control device and a chemical mechanical polishing control system. The chemical mechanical polishing method is used for grinding and polishing a semiconductor wafer. The method comprises the steps that based on a prediction model, target parameters are obtained, and the target parameters represent the relation between the predicted polishing thickness and polishing duration of a to-be-polished layer on the semiconductor wafer; in the same preventive maintenance period, in response to the fact that the current batch of polishing is the first batch of polishing, obtaining the predicted first batch of polishing duration based on the target parameter and the target polishing thickness of the first batch of polishing; and on the basis of the predicted first-batch polishing duration, performing chemical mechanical polishing treatment on the to-be-polished layer in the semiconductor wafer. According to the method, the target parameter is constructed, the target parameter is predicted through the prediction model to obtain the predicted first-batch polishing duration, the requirement for pilot production can be reduced or even eliminated, and therefore time and labor consumption is reduced.

The invention relates to the technical field of semiconductor material precision machining, and discloses a 12-inch silicon wafer double-sided polishing upper and lower surface removal amount monitoring system and method, and the system comprises a macroscopic thickness monitoring unit, a microcosmic contact state decoupling sensing unit and a data processing controller. The method comprises the following steps: synchronously acquiring a total thickness signal of a silicon wafer, an acoustic emission signal of an upper / lower fixed disc side and a fluid dynamic pressure signal; the method comprises the following steps: constructing a lubrication state correction coefficient by utilizing fluid dynamic pressure, and carrying out nonlinear correction on a mechanical friction energy index extracted by acoustic emission to obtain an effective vector removal index representing real cutting capacity; and the removal distribution ratio of the upper surface and the lower surface is calculated, and the independent absolute removal amount of the upper surface and the lower surface is obtained through decoupling in combination with the total thickness variation. According to the method, by eliminating the interference of a fluid'water cushion effect 'on a friction signal, visualization and closed-loop feedback control of a single-face removal behavior in the double-face polishing process are achieved, and the problem of silicon wafer warping caused by removal asymmetry is effectively solved.

The invention relates to a polishing performance evaluation method and device and a polishing system for improving the polishing performance. The polishing performance evaluation method comprises the steps that the track lengths of all abrasive particles of a polishing disc are obtained; based on the track lengths of all the abrasive particles, calculating to obtain a track average value and a variance; and based on the trajectory average value and the variance, trajectory distribution uniformity is obtained through calculation. The wafer polishing device has the advantages that the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that the wafer polishing uniformity can be improved, the polishing time is shortened, and the polishing efficiency is improved; the rotating motion of the polishing disc unit and the linear motion of the polishing pad unit are combined, so that uneven abrasion of the polishing pad unit can be avoided, the service life of the polishing pad unit is prolonged, and the cost is reduced.

The invention discloses a surface consistency processing method and system for semiconductor parts, and relates to the technical field of semiconductor manufacturing. The method comprises the steps that the thickness of a polishing pad, the depth of a groove, the pH value of grinding liquid and the concentration of grinding materials are uploaded, part surface features are synchronously collected, and a polishing state map is set; generating a compensation vector based on the map in combination with a precision demand; dynamically adjusting a standard polishing path according to the compensation vector, and determining M targets and N adjacent coordinates to form a region unit; and deploying a digital twinborn simulation rehearsal compensation scene, establishing a parameter adaptive mechanism in combination with reinforcement learning, and optimizing regional resource allocation. The technical problems that in the precise polishing process of semiconductor parts, due to traditional fixed path polishing, local polishing is uneven, and the surface consistency is poor are solved, self-adaptive adjustment and surface consistency optimization of area machining precision are achieved through dynamic polishing compensation based on digital twinning and reinforcement learning, and the precision of the semiconductor parts is improved. And the surface appearance uniformity and the polishing efficiency of the part are improved.

The utility model relates to the technical field of grinding, in particular to a full-automatic thickness measuring six-axis grinding, cleaning, coating and drying all-in-one machine which comprises a rack, a conveying mechanism, a grinding mechanism, an adjusting mechanism, a drying oven assembly and a cleaning mechanism. According to the utility model, a plurality of procedures such as grinding, cleaning, coating, drying and the like are integrated in one device, so that full automation and continuity of workpiece treatment are realized. And the time and the cost for transferring the workpieces among different devices are greatly reduced, and the overall production efficiency is improved. The cleaning mechanism is located between the grinding mechanism and the drying oven assembly, the surface cleanliness of the workpieces before the workpieces enter the drying oven is guaranteed, the burden of the follow-up cleaning procedure is further reduced, and the overall treatment efficiency is improved. The drying oven assembly not only has a drying function, but also integrates the functions of cleaning and coating release liquid. The workpiece treatment process is simplified, the number of devices and the occupied area are reduced, and meanwhile the treatment quality and consistency are improved.

The invention relates to a reflectivity spectrum obtaining method, an end point detection method and device and a polishing device.The reflectivity spectrum obtaining method comprises the steps that an influence factor distribution curve representing light intensity measured value volatility under different light intensity light source conditions is obtained, a critical light intensity value corresponding to the dominant light source factor is determined based on the influence factor distribution curve, and the critical light intensity value is calculated according to the critical light intensity value. The source light beam is split according to a preset proportion beta to obtain a required measurement light beam and a reference light beam, and the measurement light beam enters a sample to form a reflection light beam; the reflected light intensity is calibrated based on the reference light intensity to generate a target reflected light intensity. And calculating the reflectivity spectrum of the sample based on the target reflection light intensity. Wherein the measuring light beam and the reference light beam have the same light intensity volatility, so that when the reflected light intensity is calibrated based on the reference light intensity, the accuracy and the stability of reflectivity spectrum measurement are effectively improved.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system, and a controller. The controller is configured to detect exposure of an underlying layer due to the polishing of the substrate based on measurements from the in-situ acoustic monitoring system. The in-situ acoustic monitoring system may detect exposure of an underlying layer based on comparison of the signal to prior measurements of acoustic signals generated by stress energy of test substrates.

The invention relates to the technical field of semiconductor manufacturing, in particular to a photo-assisted catalytic diamond chemical mechanical polishing device, which solves the problems of low photocatalytic efficiency and low processing efficiency in the prior art, and comprises a bracket, a rotating platform and a working turntable for loading diamond wafers are arranged on the bracket, and an annular baffle plate is arranged on the outer side of the rotating platform. The rotating platform and the annular baffle are matched to form a containing groove, an annular polishing pad and a middle ultraviolet light source are arranged on the rotating platform, the middle ultraviolet light source is located in the center of the annular polishing pad, a side edge ultraviolet light source is arranged on the inner side of the annular baffle, and the annular polishing pad and the middle ultraviolet light source both correspond to the working rotary table in position; the containing groove is filled with polishing liquid, and the annular polishing pad, the side edge ultraviolet light sources and the middle ultraviolet light source are all immersed in the polishing liquid. The device has the beneficial effects that the design that the middle ultraviolet light source and the side ultraviolet light sources cooperatively irradiate is adopted, and the promoting effect of photocatalysis on the chemical reaction on the surface of the diamond is enhanced.

The utility model provides an auxiliary driving device, a polishing mechanism for wafer processing and polishing equipment. The auxiliary driving device comprises an auxiliary driver; the magnetic coupling mechanism comprises an electromagnetic wheel and a conductive gear opposite to the electromagnetic wheel; the electromagnetic wheel is configured to be driven to rotate by the auxiliary driver; the conductive gear is provided with a conductive disc and a gear surrounding the conductive disc, and the conductive gear is in power connection with a polishing head station switching mechanism of the polishing equipment; the electromagnetic wheel is configured to have magnetism when powered on so as to be in magnetic connection with the conductive gear, so that power of the auxiliary driver is transmitted to the polishing head station switching mechanism through the conductive gear, and polishing head station switching is conducted. According to the polishing mechanism, the polishing head station switching mechanism can be driven by the auxiliary driver to conduct polishing head station switching and posture adjustment, and the maintenance or repair convenience of the polishing mechanism is improved.

A wafer polishing system, comprising at least one polishing unit, wherein the polishing unit comprises a wafer transfer passage and at least two polishing modules; and the polishing modules are located on both sides of the wafer transfer passage. After a polishing arm of one polishing module obtains a wafer from a working position in the wafer transfer passage, the polishing process is completed; the wafer is then placed back to the wafer transfer passage along a first trajectory; a wafer transfer device moves to transfer the wafer to another working position, and after a polishing arm of the other polishing module obtains the wafer from the working position along a second trajectory, another polishing process is completed; and the first trajectory, a movement trajectory of the wafer transfer device, and the second trajectory are approximately Z-shaped.

Dust particles generated on a back surface of a substrate as a result of polishing by a polishing tool are also forced out toward an outer periphery of the polishing tool by centrifugal force. Then, nitrogen gas is ejected from an ejection port. This forces the dust particles adhering to the back surface of the substrate to separate from the back surface of the substrate. The dust particles are sucked through a suction port. This makes the dust particles less likely to remain on the back surface of the substrate, so that it is possible to increase the rate of removal of the dust particles generated as a result of polishing.

The invention relates to the technical field of optical element machining, in particular to an HUD free-form surface mirror machining method which comprises the following steps of S1, substrate selection and cutting, S2, edge treatment, S3, first-stage hot bending forming, S4, second-stage hot bending forming and S5, grinding. According to the machining method disclosed by the invention, through cooperative use of the first-stage hot bending forming and the second-stage hot bending forming, machining operation of the free-form surface mirror with the large size, the large curvature and the small thickness can be achieved; meanwhile, through the two-stage hot bending forming process, primary forming is conducted through first-stage hot bending forming, pressure maintaining is conducted near a softening point through second-stage hot bending forming, the glass is evenly heated and stressed, residual stress is effectively released, the surface type is promoted to present an ideal gradual change trend, edge distortion is greatly reduced, and the high-precision surface type of the final curved mirror is ensured.

A pad-surface determination method that can appropriately determine a surface property of a polishing pad including a condition of protrusions formed on a polishing surface of the polishing pad is disclosed. The pad-surface determination method includes: irradiating a target area in the polishing surface with a plurality of lights from a plurality of light emitters at different incident angles; receiving a plurality of reflected lights from the target area by an imaging device; generating a plurality of images corresponding to the different incident angles by the imaging device; and determining the surface property of the polishing pad based on at least one of the plurality of images. A protrusion is formed on the polishing surface in the target area.

The invention belongs to the related field of ultra-precision polishing technology, and discloses an ultrasound-piezoelectricity-photocatalysis assisted chemical mechanical polishing method which comprises the following steps: mixing a basic polishing abrasive, a piezoelectric material and a photocatalyst, calcining and grinding, and processing to obtain a modified abrasive; preparing a polishing solution containing a piezoelectric catalysis carrier and a photocatalysis carrier at the same time; the polishing process is completed through a chain of mechanical stress, a piezoelectric electric field, efficient carrier separation and more active species participating in reaction. The invention further discloses a matched polishing device. Compared with the prior art, the method has the advantages that the material removal rate can be effectively increased, the polishing time can be effectively shortened, the surface quality can be further improved, the subsurface damage can be reduced, in addition, a more environment-friendly polishing solution can be used, the waste liquid treatment cost is reduced, the environment is protected, and the method is suitable for industrial production. Therefore, the polishing device is especially suitable for various high-hardness materials to realize the polishing application occasions of low-damage and ultra-smooth surfaces of the high-hardness materials.

A liquid supply device for spraying liquid onto a workpiece or a jig for the workpiece. The liquid supply device includes an accommodation portion configured to accommodate the liquid, a pump configured to pump the liquid from the accommodation portion, a spray portion configured to suction the liquid pumped from the accommodation portion to spray the liquid onto the workpiece, a pump-side supply pipe connected to the accommodation portion, the pump-side supply pipe being configured to discharge, by a predetermined amount at a time, the liquid pumped by the pump, and a spray-side supply pipe including an upstream end portion into which the liquid discharged from the pump-side supply pipe flows and that is open to an atmosphere, and a downstream end portion configured to spray the liquid flowing from the upstream end portion via the spray portion.

The invention relates to the technical field of grinding fluid, in particular to efficient grinding fluid for an MPO connector, a preparation method and application of the efficient grinding fluid for the MPO connector. 27%-44% of alpha-aluminum oxide; 8%-15% of a styrene-maleic anhydride copolymer; 2%-5% of a modified polyurea solution; 0.05% to 0.3% of perfluoropolyether; 0.5%-2% of citric acid; 0.5%-1.5% of a polyether modified polysiloxane defoaming agent; by adopting a composite abrasive material system of the nano-diamond and the alpha-aluminum oxide, the grinding efficiency and the surface quality are improved in a breakthrough manner.

The utility model discloses a ferrite magnetic core grinder, which relates to the field of ferrite magnetic core grinding and comprises a working platform, a grinding roller for grinding a magnetic core is mounted on the outer wall of the working platform, a movable plate is further mounted on the outer wall of the working platform in a sliding manner, and a lifting plate is vertically mounted at the top end of the movable plate in a sliding manner. The transmission mechanism is arranged on the movable plate and the lifting plate; the transmission mechanism comprises a limiting unit and a clamping unit; and the clamping unit is used for clamping the magnetic core. By arranging the transmission mechanism, when a magnetic core needs to be ground, the magnetic core can be clamped through the lead screw and the clamping block, the height of the lifting plate is adjusted by releasing limiting of the limiting block and the guide rod, the magnetic core is made to move to the needed height to make contact with the grinding roller to be ground, and compared with a traditional lifting mode, the magnetic core grinding device has the advantages that the magnetic core grinding efficiency is improved. By means of the structure, a user can conveniently and accurately adjust the height, and working efficiency is improved.

The invention relates to the technical field of chemical mechanical polishing, in particular to an immersed double-frequency ultrasonic-assisted chemical mechanical polishing device which comprises a polishing pool with an upward pool opening. Two front supports which are distributed left and right are mounted on the front inner side surface of the polishing pool; a driving motor A with a rightward output shaft is mounted on the left outer side face of the polishing pool, and the output shaft of the driving motor A rotationally penetrates through the left side wall of the polishing pool and the front support close to the left; the right end of an output shaft of the driving motor A is connected with a driving roller, and the right end of the driving roller is rotationally supported on a front support close to the right; two rear supports which are distributed left and right are mounted on the rear inner side surface of the polishing pool; a driven roller is rotationally supported between the two rear supports; and a polishing belt is assembled on the driving roller and the driven roller together. The invention solves the problems of low polishing speed, poor surface quality after polishing, low polishing qualification rate and poor stability in the polishing process in the existing chemical mechanical polishing technology, and is suitable for the fields of semiconductor manufacturing, optical device processing and the like.

The invention provides a polishing end point detection method, chemical mechanical polishing equipment and a storage medium, and belongs to the field of chemical mechanical polishing. The method comprises the steps that a reflection spectrum of the surface of a wafer in the chemical mechanical polishing process is obtained; correcting the reflection spectrum by adopting a preset correction coefficient to obtain a corrected reflection spectrum; dividing the corrected reflection spectrum into a dark noise spectrum and a to-be-measured spectrum based on a comparison result of the corrected reflection spectrum and a corresponding threshold value; determining the reflectivity of the surface of the wafer based on the to-be-measured spectrum, the dark noise spectrum, the reference spectrum and a preset reference spectrum reflectivity; the wafer thickness is determined using the reflectivity of the wafer surface to detect a polishing endpoint based on the wafer thickness. The terminal point detection accuracy is improved.

An example method includes obtaining data indicative of a workpiece processing parameter. In some implementations, the example method includes determining a grinding depth for a semiconductor workpiece based at least in part on the data indicative of the workpiece processing parameter. In some implementations, the example method includes performing a grinding operation to remove material from the semiconductor workpiece to reduce a thickness of the semiconductor workpiece by the grinding depth.

The utility model discloses a bearing cap end face grinding device, which relates to the field of bearing cap grinding and comprises a grinding box and a grinding disc movably arranged above the grinding box, an annular grinding shell is arranged at the upper end of the grinding box, an elliptical plate is rotatably arranged on the inner side of the annular grinding shell, a plurality of gears are movably arranged on the inner side of the annular grinding shell, and the gears are meshed with the elliptical plate. A plurality of gears are fixedly arranged on the inner side of the grinding box, a plurality of storage holes used for storing bearing caps are formed in the upper ends of the gears in a penetrating mode, a gear ring is fixedly arranged on the outer side of the oval plate, the gear ring is meshed with the gears, and a grinding motor is fixedly arranged on the inner side of the grinding box. According to the bearing cap grinding device, the multiple bearing caps can be ground at the same time, the multiple gears are driven to rotate through the gear ring, the grinding efficiency can be further improved when the multiple bearing caps are ground at the same time, and double-face grinding is conducted on the bearing caps through the arrangement of the annular grinding shell and the grinding disc.

An integrated cleaning and liquid supply device and online cleaning method for polyurethane polishing pads are disclosed. The device includes a base, a rotating seat, a swing arm, an independent liquid supply pipeline system and cleaning pipeline, a high-pressure nozzle array, and a positioning sensor assembly. During the polishing stage, polishing liquid is dripped through the liquid supply outlet. During the cleaning stage, the swing arm moves centripetally to a preset position aligned with the center of the polishing pad. The positioning sensor triggers a high-pressure pump, causing pure water to be sprayed as an atomized jet along the diameter of the pad surface through the high-pressure nozzle array. Simultaneously, the polishing pad rotates at a low speed, utilizing the synergistic effect of centrifugal force and high-pressure water flow to thoroughly remove residual contaminants within the micropores of the polyurethane. This invention integrates liquid supply and deep cleaning functions into the same motion mechanism, eliminating the need for machine shutdown or manual intervention. It offers advantages such as non-contact, non-destructive, thorough cleaning, and high automation, extending the life of the polishing pad and improving the stability of the CMP process.

The invention provides a chemical mechanical polishing method for improving copper residues on the edge of a wafer, and belongs to the technical field of semiconductor manufacturing. The method comprises the steps that in the polishing process, the pressure applied to the edge area of a wafer is controlled to be 3.0 psi to 10.0 psi; meanwhile, the rotating speed of the polishing head is controlled to be 100-140 rpm, the problem of edge copper residues of the trimmed wafer can be effectively solved on the premise that equipment hardware and the types of grinding liquid are not changed, excessive mechanical stress on the edge of the wafer is reduced due to moderate reduction of edge pressure, and excessive deformation of a grinding pad in the area is avoided; the fluidity and the distribution uniformity of the grinding liquid in the edge area are improved and the chemical grinding effect is enhanced through the effect of enhanced centrifugal force by synchronously increasing the rotating speed, and the problem of non-uniform grinding caused by edge geometric mutation due to edge trimming is jointly solved through collaborative optimization of the two factors; and effective control of copper residues is realized.