8962results about "Lapping machines" patented technology

The invention discloses an automatic wafer grinding system. The automatic wafer grinding system comprises a rack, a feeding unit, a first picking unit, a positioning unit, a reference piece bearing unit, a second picking unit, a machining unit, a cleaning unit and a discharging unit, wherein the feeding unit, the first picking unit, the positioning unit, the reference piece bearing unit, the second picking unit, the machining unit, the cleaning unit and the discharging unit are arranged on the rack. The information acquisition unit is used for acquiring material and position information of the wafers and the reference sheets, and the control system is used for controlling the units to transport and process the wafers. All the units are controlled through the information acquisition unit and the control system, automatic conveying and machining of wafers are achieved, the in-place precision and the machining efficiency of the wafers are improved, and the wafer machining quality is guaranteed. The invention further provides an automatic wafer grinding method, by means of the automatic wafer grinding system, the in-situ feeding and in-situ discharging principle of feeding and discharging is perfectly met, and meanwhile the labor intensity of operators is reduced.

The embodiment of the invention provides a wafer polishing method, polishing equipment and a storage medium. The wafer polishing method comprises the following steps: acquiring a first value range of polishing time for polishing a wafer, a second value range of polishing pressure of a polishing head and a target removal amount of the wafer; updating a preset constraint condition according to the first value range and the second value range to obtain a target constraint condition; wherein the constraint condition is used for constraining the range of the polishing time and the polishing pressure; the polishing time and the polishing pressure serve as variables to be optimized of an optimization model, at least the minimum difference between the predicted removal amount and the target removal amount serves as an optimization target of the optimization model, and the optimization model is constructed according to a preset removal rate prediction model; based on the target constraint condition and the optimization model, the polishing time and the polishing pressure are determined; and controlling the polishing head to polish the wafer according to the determined polishing time and polishing pressure.

The invention relates to the technical field of semiconductor chemical mechanical polishing, in particular to a pressure-adjustable double-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device which comprises a rotary table, and a tray, a lower vibration plate, an upper vibration plate, a magnetic sheet and a polishing pad are sequentially stacked and fixed to the upper surface of a table plate of the rotary table from bottom to top. A piezoelectric ceramic piece is fixed to the middle of the lower surface of the upper vibration plate, a retaining sleeve is eccentrically placed on the upper surface of the polishing pad, a threaded sleeve is in threaded connection with the upper end of the outer side face of the retaining sleeve, a damping spring is fixed to the outer top face of the threaded sleeve, a supporting piece is fixed to the upper end of the damping spring, and an inner ring of a second electric sliding ring is fixed to the upper surface of the supporting piece. A transmission shaft is fixedly assembled in an inner ring of the second electric slip ring, a clamping sleeve is fixed to the lower end of the transmission shaft, and an ultrasonic vibrator is fixedly assembled in the clamping sleeve. The method solves the problems that an existing semiconductor chemical mechanical polishing technology is low in polishing speed, poor in surface quality after polishing and low in polishing qualification rate, and is suitable for semiconductor chemical mechanical polishing.

The invention relates to the field of wafer processing, and discloses a wafer grinding and polishing adjustment control system based on a tension sensor, which comprises a processing pressure acquisition module for acquiring the gravity of a heavy object, acquiring the tension of an electric cylinder in real time based on the tension sensor, calculating the processing pressure through a formula, and acquiring grinding state parameters of a wafer in real time; the processing pressure stability analysis module comprises a first analysis unit and a second analysis unit; the first analysis unit is used for calculating the accumulated variable quantity of the processing pressure in a preset monitoring period, comparing the accumulated variable quantity with a change threshold value and sending out an alarm signal; the second analysis unit inputs the grinding state parameters into a grinding state model to analyze a grinding state value, and reversely evaluates the state of the grinding disc; the adjusting control module adjusts the pulling force of the electric cylinder based on the first analysis unit and judges whether the grinding disc is replaced based on the second analysis unit. Accurate monitoring and stability control of the machining pressure are achieved, the state of the grinding disc can be effectively evaluated, and the wafer grinding and polishing quality and efficiency are improved.

The electrochemical mechanical polishing method and device are characterized in that a workpiece clamping device is adjusted according to the size of the semiconductor wafer and is adsorbed on a pressurizing device, and the semiconductor wafer is connected to a positive electrode of a power supply through a conducting ring to serve as an anode of an electrolysis system; the fixed abrasive pad is fixed on the polishing disc through a conductive adhesive and is connected to a power supply cathode through a conductive ring to serve as a cathode of the electrolysis system; during polishing, a polishing solution is connected with a conductive adhesive for fixing the polishing pad through a through hole in the fixed abrasive pad to form an electrolytic tank path, chemical oxidation and anodic oxidation are carried out on the surface of the third-generation semiconductor wafer during polishing to form a passivation oxide layer with low hardness, and valleys of the passivation oxide layer are passivated and protected. And the peak is quickly removed by the fixed abrasive, so that a polishing mode of anodizing and online removing the surface of the third-generation semiconductor wafer is realized. The method has the advantages of high abrasive utilization rate, high material removal rate, good surface quality, recycling of the polishing solution and the like.

The present disclosure provides a polishing device comprising a frame (1), and a polishing disc (2), an assistant polishing disc (3), and a fixture (5) that are disposed on the frame (1). At least one polishing position (4) is disposed on the assistant polishing disc (3). The assistant polishing disc (3) is clamped by the fixture (5) and in contact with the polishing disc (2). The fixture (5) includes a plurality of claws (52), the plurality of claws (52) include at least a first claw extending from above the at least one polishing position (4) to an edge of the assistant polishing disc (3). A pre-tightening part is disposed on a position, corresponding to the at least one polishing position (4), of the first claw. The pre-tightening part includes a scale and a pre-tightening member. A scale value representing a polishing removal efficiency is preset on the scale.

The invention relates to a wafer polishing method and apparatus, a data processing apparatus, a program, and a storage medium. The polishing method comprises the following steps: loading a wafer to be polished; reading in a first polishing formula, and carrying out primary polishing on the wafer according to the first polishing formula; wafer parameters of all the partitions of the wafer are detected, whether the wafer parameters of all the partitions of the wafer reach the standard or not is judged, if yes, the wafer is unloaded, if not, a second polishing formula is obtained through the dynamic adjustment model according to the wafer parameters, and secondary polishing is conducted on the partitions, not reaching the standard, of the wafer based on the second polishing formula. And then returning to detect the wafer parameters of the partitions of the wafer again until the wafer parameters of all the partitions of the wafer are judged to reach the standard, and unloading the polished wafer. According to the method, the reworking function of multi-zone automatic triggering and time-pressure automatic combined adjustment can be achieved in the wafer polishing process, repeated treatment on the whole wafer is avoided, and material consumption and cost are reduced.

The invention discloses a PPG glass single-face machining and grinding device and technology, and relates to the field of lens grinding, the PPG glass single-face machining and grinding device comprises a base, the base is provided with a plurality of containing plates used for containing PPG glass, the base is provided with a mounting plate in a lifting mode, and the mounting plate is rotationally provided with a plurality of rotating discs; a rotating sleeve is rotatably arranged on the lower side of the rotating disc, the rotating axis of the rotating sleeve and the rotating axis of the rotating disc are staggered, a linkage rod is arranged in the rotating sleeve in a lifting mode, the linkage rod and the rotating sleeve coaxially rotate, and a grinding wheel is fixedly connected to the lower end of the linkage rod. The PPG glass processing device is beneficial for improving the PPG glass processing efficiency.

The invention relates to the technical field of diamond precision machining, and provides a polishing solution for diamond and a diamond chemical mechanical polishing method. The polishing solution for the diamond is formed by mixing and uniformly stirring deionized water, diamond micro-powder, iron powder, a catalyst and a dispersing agent; the grinding aid comprises the following components in percentage by weight: 50%-68% of deionized water, 10%-40% of diamond micro powder, 10%-35% of iron powder, 2%-5% of a catalyst and 0.1%-0.5% of a dispersing agent. By adding the iron powder into the polishing solution, the iron powder can reduce the activation energy of diamond graphitization and catalyze the diamond surface, and the catalytic action aggravates the conversion from diamond to graphite, so that the diamond surface becomes very soft, and carbon atoms on the diamond surface are easier to separate. And the polishing and removing process of the diamond material is accelerated through the catalysis effect of the iron powder, so that ideal surface quality and precision can be achieved in a short time during diamond polishing.

Provided is a polishing composition capable of realizing high polishing removal rate on an object to be polished. The polishing composition provided by this invention is used for polishing an object to be polished. The polishing composition includes water, sodium permanganate as an oxidant, and a transition metal salt different from the oxidant. The polishing composition includes the oxidant in an amount of more than 10 wt %. In some preferable embodiments, the transition metal salt is an oxo-transition metal salt, or a multi-nuclear transition metal complex including a transition metal and one or both of oxygen and hydrogen. The polishing composition can be preferably used in polishing an object formed of a high-harness material having a Vickers hardness of 1500 Hv or higher.

The invention relates to a double-sided polishing method for mask substrate glass, which comprises the following steps: polishing glass by using a double-sided polishing machine which comprises an upper polishing disk, a lower polishing disk, an upper polishing pad, a lower polishing pad, a sun wheel, a gear ring and a plurality of wandering star wheels; during polishing, the rotating speed of the lower polishing disc is higher than that of the upper polishing disc, and the rotating directions of the lower polishing disc, the upper polishing disc, the gear ring and the sun gear are opposite. In the polishing process, the back face type of the glass is kept to be a concave face type with the low center and the high periphery, the front face type of the glass is prevented from deteriorating, and the flatness effect of the front face of the polished glass is effectively improved.

The invention belongs to the field of machining, and discloses an end point detection method and system for the polishing process of a high-hardness and brittle material, and the method comprises the following steps: step 1, constructing a mathematical model of chemical mechanical polishing; 2, a test platform is built for force and torque signal acquisition; step 3, performing circuit design of an edge computing platform; 4, performing a parameter control experiment; 5, developing an upper computer system; step 6, finally obtaining a training set of the high-hardness and brittle material processing state prediction model based on the force and torque signals; step 7, training the processing state prediction model; and step 8, performing end point detection by using the trained processing state prediction model. According to the method, online real-time detection is conducted on the polishing state through the polishing torque, state feedback is conducted, the polishing machining efficiency can be improved, the polishing quality and the polishing yield can be improved, and the cost is reduced.

The invention relates to the technical field of diamond roller machining, in particular to diamond roller mounting inner hole high-precision grinding equipment which comprises a base, a linkage column fixedly connected to the top of the base and a rotary clamping assembly arranged on the base and used for centering and clamping a diamond roller. The lifting plate is provided with an air cooling type grinding assembly which conducts efficient cooling type grinding and assists in inner hole chipping cleaning. According to the diamond roller grinding device, centering clamping treatment is conducted on diamond rollers of different sizes through the rotary clamping assembly, comprehensive efficient grinding treatment of different inner holes is achieved in combination with the air-cooled grinding assembly, the grinding requirements of the diamond rollers of different sizes can be automatically met without additional replacement operation, and through cooperation of the rotary clamping assembly and the air-cooled grinding assembly, the grinding efficiency is greatly improved. And the multi-direction grinding effect can be further achieved, and chippings can be discharged in an auxiliary mode for convenient collection.

The invention provides a preparation method and application of a dopamine hydrochloride modified cerium oxide core-shell abrasive, and the preparation method comprises the following steps: adding water into cerium salt until the cerium salt is completely dissolved, taking out silicon dioxide micro-powder in which the mass ratio of the cerium salt to the silicon dioxide micro-powder is (0.5: 1)-(7: 1), and ultrasonically dispersing the silicon dioxide micro-powder in absolute ethyl alcohol to obtain dispersion liquid; mixing the dispersion liquid with a hexamethylenetetramine aqueous solution and a cerium salt aqueous solution, heating in an oil bath, stirring and reacting to obtain a mixed solution, centrifuging the mixed solution, washing with deionized water and absolute ethyl alcohol, drying to obtain a mixed solid, and calcining the mixed solid to obtain a cerium precursor; and dispersing the cerium precursor in a mixed solution obtained by deionized water and ethanol, slowly adding dopamine hydrochloride and a buffer solution, stirring, centrifuging, washing and drying to obtain the photocatalyst. According to the polishing solution prepared from the abrasive, the removal rate reaches 0.1458 mg / min.

The present invention discloses a positioning grinding system and method for a semiconductor chip sample cross section, wherein a target grinding position and grinding marks are arranged on the surface of the semiconductor chip sample to be ground; the grinding marks include a first grinding mark located on the first side of the target grinding position and a second grinding mark located on the second side of the target grinding position; the first grinding mark and the second grinding mark both include multiple rows of marking graphic groups arranged along a first direction; each row of marking graphic groups includes at least one marking graphic, and the number of marking graphics in two adjacent rows of marking graphic groups is different, an optical microscope is used to observe the grinding progress of the semiconductor chip sample to be ground in real time; and a grinding assembly is used to grind the semiconductor chip sample to be ground according to the target grinding position and the grinding marks. The positioning grinding system provided by the present invention provides multiple grinding marks on the surface of the semiconductor chip sample to be ground to remind the staff of the grinding progress in real time, so as to achieve precise positioning of mechanical grinding.

The embodiment of the invention provides a wafer grinding detection method, a wafer grinding processing method, a wafer grinding processing device and wafer grinding equipment. The wafer grinding detection method comprises the following steps: a determination step: determining whether a grinding wheel of wafer grinding equipment is in contact with a workbench or not; an obtaining step: after determining that the grinding wheel is in contact with the workbench, obtaining the position of a main shaft and the height of the workbench of the wafer grinding equipment in real time; and an abnormity step: determining whether abnormity occurs during grinding of the workbench according to the position of the spindle and the height of the workbench. According to the embodiment of the invention, the change of the height of the workbench and the change of the position of the spindle motor are combined to judge whether the grinding process is abnormal or not, the two parameters of the height of the workbench and the position of the spindle motor are monitored at the same time, problems possibly occurring in the grinding process can be recognized more accurately, the possibility of misjudgment is reduced, and the grinding efficiency is improved. And the detection accuracy and reliability are improved. In addition, an operator can be reminded to take measures in time through accurate anomaly detection, and therefore the damage risk of the workbench and the grinding wheel is reduced.

To provide a composition for chemical mechanical polishing and a polishing method that can effectively suppress contamination of foreign matters during manufacturing and can polish the surface of a semiconductor substrate to a flat surface.SOLUTION: The composition for chemical mechanical polishing according to the present invention contains (A) abrasive grains including silica and (B) a liquid medium, in the (A) component, when the peak intensity of 490 cm-1 derived from a 4-membered ring measured by Raman spectroscopy is x and the peak intensity of 800 cm-1 derived from a multi-membered ring measured by Raman spectroscopy is y, x / y is 4.5 to 6.0, and the (A) component has at least one functional group selected from those represented by the following general formulae (1) to (4), -SO3-M+ (1), -COO-M+ (2), -NR1R2 (3), -N+R1R2R3M- (4).SELECTED DRAWING: None

The embodiment of the utility model provides a polishing head and polishing equipment. The polishing head comprises a base, a polishing head and a driving device, the retaining ring is arranged below the base; the polishing head gas film is arranged on the base, is arranged on the inner side of the retaining ring and is used for fixedly holding the wafer; the retaining ring gas film is arranged on the inner side of the retaining ring and is arranged between the retaining ring and the polishing head gas film, the retaining ring gas film is in contact with the edge of the wafer when the retaining ring gas film is pressurized and expanded so as to apply acting force to the edge of the wafer, and the acting force forms radial clamping force and axial downward pressure on the edge of the wafer. Radial clamping force and axial downward pressure are applied to the edge of the wafer through the retaining ring gas film, the wafer can be clamped through the radial clamping force, the wafer is prevented from moving in the polishing process, and the risk of wafer sliding is reduced; the axial downward pressure can apply pressing force to the edge of the wafer in the wafer polishing process, the polishing effect of the edge of the wafer can be controlled more accurately, and the polishing consistency of the surface of the whole wafer is guaranteed.

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to an ultraviolet light catalysis assisted gallium nitride wafer polishing method which comprises the following steps: S1, fixing a ground and flushed gallium nitride wafer on a clamp of a polishing machine; s2, the sealed cabin of the polishing machine is vacuumized until the vacuum degree reaches a set vacuum degree threshold value, and then the sealed cabin is filled with oxygen until the pressure value of the oxygen in the sealed cabin reaches a set pressure threshold value; s3, an ultraviolet lamp and a heater are turned on, the ultraviolet lamp irradiates the polishing solution, the heater heats the polishing solution to a set temperature and keeps the temperature constant, and then the polishing machine is started to polish the gallium nitride wafer; and S4, cleaning the polished gallium nitride wafer. According to the method, the oxidation rate is increased, and the polishing efficiency of the gallium nitride wafer is further improved.

The invention provides a polishing head, a polishing system and a control method of the polishing system. The polishing head comprises a retaining ring and a back film, the retaining ring and the back film are both installed on the body, the retaining ring surrounds the periphery of the back film, the polishing head further comprises a shape compensation plate, the shape compensation plate is installed on the bottom face of the back film and comprises a plurality of control point positions, and a wafer fixing cavity is formed between the shape compensation plate and the retaining ring. The shape compensation plate is used for being electrically connected with a deformation controller, and the deformation controller can control at least one control point to stimulate the shape compensation plate, so that the shape compensation plate deforms at the local part where the control point is located. The polishing system is provided with the polishing head, the invention further provides a working method of the polishing system, the polishing head can ensure the flatness of the wafer during polishing, the polishing thickness of the wafer is uniform, and the product yield is improved.

The invention provides an automatic grinding wire set for grinding an optical fiber MPO jumper wire, which comprises a plurality of grinding machine sets arranged side by side, a grinding machine for placing a grinding clamp and a cleaning machine for cleaning the grinding clamp are arranged on the table top of each grinding machine set, and a grinding support is further arranged on the table top of each grinding machine set. A linear sliding assembly located above the grinding machine and the cleaning machine is arranged on the grinding support, a pair of clamp clamping assemblies used for clamping the grinding clamp is connected to the linear sliding assembly in a sliding mode, and the linear sliding assembly is used for driving the pair of clamp clamping assemblies to synchronously and linearly reciprocate to clamp the optical fiber grinding clamp to synchronously move. The automatic grinding line group is in an array parallel group mode, each grinding machine and each cleaning machine form a station, the multiple stations are controlled by the PLC in a unified mode to conduct synchronous line production, grinding of the optical fiber MPO jumpers in multiple procedures can be conducted at the same time, and the production grinding efficiency is effectively improved.

The invention belongs to the technical field of grinding and polishing, and particularly relates to an aluminum nitride ceramic polishing process. The polishing process comprises the following steps that the aluminum nitride ceramic substrate is placed on a polishing pad, and polishing liquid is added for polishing; the polishing solution is prepared from the following components in parts by weight: 15-20 parts of a composite abrasive, 2-4 parts of an oxidant, 8-10 parts of a functional compound and 60-70 parts of water are mixed into a solution, and the pH value of the solution is adjusted to be 4-4.5 by using organic acid; the polishing solution provided by the invention has good suspension stability and antibacterial performance, the polishing solution is used for polishing the aluminum nitride ceramic substrate, the polishing rate is high, the polishing effect is good, and the aluminum nitride ceramic substrate which is small in surface roughness and free of scratches can be obtained.

The invention provides a wafer film thickness measuring method and device and chemical mechanical polishing equipment, the wafer film thickness measuring method comprises the following steps: a measuring spectrum and an interference spectrum are obtained, the measuring spectrum is formed by measuring light, and the interference spectrum is formed by reflected light after the measuring light is reflected by a wafer; calculating a correction coefficient according to the measured spectrum, and correcting the interference spectrum according to the correction coefficient; calculating a reflectivity curve of the wafer according to the corrected interference spectrum; and determining the film thickness of the wafer according to the reflectivity curve. According to the wafer film thickness measurement method, the influence of measurement noise on an interference spectrum is eliminated, the control precision of the wafer surface quality is improved, and the chip manufacturing yield is further improved.

The embodiment of the invention provides a wafer transmission manipulator and a wafer transmission method and device. The wafer transfer manipulator comprises: a base; the connecting mechanism is arranged on the base, and the connecting mechanism is provided with a centering reference datum; the first clamping jaw and the second clamping jaw can be movably connected to the connecting mechanism relative to the centering reference datum in an opposite or opposite manner; the driving mechanism is used for driving the first clamping jaw and the second clamping jaw to move, so that the first clamping jaw and the second clamping jaw are located at a bearing position, a clamping position or a releasing position; when the first clamping jaw and the second clamping jaw are located at the clamping positions, the distance between the circle center of the wafer and the centering reference plane is smaller than a first preset value. According to the embodiment, the first clamping jaw and the second clamping jaw can receive the wafer with position deviation when being at the bearing position, so that a front-end manipulator can interact with the embodiment. And the front-end manipulator can load the wafer from the wafer box in an adsorption manner, and place the processed wafer into the wafer box in a clamping manner, so that cross contamination during wafer loading and unloading is avoided.

A polishing apparatus for double-sided polishing of semiconductor wafers including a first platen, a second platen, a wafer carrier, and a controller is disclosed. The controller is configured to perform operations including determining whether a batch of the semiconductor wafers is loaded on the wafer carrier for double-sided polishing and retrieving specification for the batch of semiconductor wafers. The operations include based on the retrieved specification, determining an amount of tuning required for one or more flatness control parameters, and based on the amount of tuning required for the one or more flatness control parameters, identifying, or generating a recipe to perform the double-sided polishing on the batch of the semiconductor wafers. The operations include storing statistical process control (SPC) feedback data in a database to perform one or more additional iterations of the double-sided polishing on the batch of the semiconductor wafers.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

The invention discloses grinding and polishing equipment for a ball valve element and a machining method of the grinding and polishing equipment, and belongs to the technical field of ball valve element machining. According to the technical scheme, the grinding and polishing equipment is characterized by comprising a supporting frame and further comprising a placement assembly, and the placement assembly comprises a lifting frame, a lifting device, a placement disc, a supporting shaft and rolling wheels; the grinding device comprises a first rotating shaft, a rotating frame, a universal shaft, a grinding disc, a grinding frame, a first electric telescopic rod and a second grinding piece, the universal shaft is installed on the rotating frame, the grinding disc is installed on the rotating shaft, the grinding frame is installed on the supporting frame, the first electric telescopic rod is installed on the grinding frame, and the second grinding piece is installed on the first electric telescopic rod. According to the grinding device, the outer surface of the valve element of the ball valve and the inner wall of the middle round hole can be ground at the same time, the grinding disc in the grinding device can grind the outer surface of the valve element, the second grinding piece can go deep into the round hole to conduct synchronous treatment on the inner wall, the grinding time is greatly shortened, and the working efficiency is remarkably improved.

The utility model discloses a polishing head structure and polishing head drive device, wherein the polishing head structure includes bearing piece, flexible film and N pressure adjustment subassembly, N > = 2, the bearing piece includes side plate and transverse plate, side plate encloses to form the hollow cavity, transverse plate cover is provided the hollow cavity one side, flexible film and side plate inner side wall fixed connection, and the pressure adjustment subassembly is provided with the pressure adjustment subassembly. The flexible film is provided with a first surface and a second surface which are oppositely arranged, and the first surface is suitable for being attached to a to-be-polished part; any pressure adjusting assembly comprises at least one piezoelectric actuator and at least one pressure detection piece, the piezoelectric actuators are distributed on the second surface, the pressure detection pieces are located between the piezoelectric actuators and the flexible film, and the pressure detection pieces are used for obtaining pressure information generated by the corresponding piezoelectric actuators on the flexible film. Through cooperative use of the piezoelectric actuator and the pressure detection piece, the accuracy of the value of the pressure applied to the flexible film is improved, so that the planarization effect of the wafer is improved.

The invention provides a grinding disc, chemical mechanical polishing equipment and a detection method.The grinding disc comprises at least one finishing area and at least one scratch detection area which are arranged at the grinding end of the grinding disc, the finishing area is used for grinding a wafer, and the scratch detection area comprises a scratch detection material; whether the wafer has a scratch risk or not is judged by detecting whether the scratch detection material is scraped on the grinding pad by the hard particles or not in the wafer grinding process. In the wafer grinding process, if particles with relatively high hardness are generated on the grinding pad, when the particles with relatively high hardness are cleaned by the grinding disc, the scratch detection area is scratched by the particles with relatively high hardness, the scratch detection material is scratched on the surface of the grinding pad, and when the scratched scratch detection material is detected on the grinding pad, an alarm is triggered. Therefore, the wafer scratch can be timely and effectively detected in the wafer grinding process, the subsequent wafer is prevented from being continuously scratched by particles with relatively high hardness, and the yield of the wafer is improved.

A polishing pad and a chemical mechanical polishing apparatus are provided. The polishing pad includes: a central portion, designed with a central recess; and a peripheral portion surrounding the central portion, and designed with at least one peripheral recess. The at least one peripheral recess is disposed along an annulus contour. A lower part of the peripheral recess is greater than an upper part of the peripheral recess in terms of diameter area, and is different from the upper part in shape.