32 results about "Solid state structure" patented technology

Inventions relate to scintillation substances and they may be utilized in nuclear physics, medicine and oil industry for recording and measurements of X-ray, gamma-ray and alpha-ray, nondestructive testing of solid states structure, three-dimensional positron-emission tomography and X-ray computer tomography and fluorography. Substances based on silicate comprising lutetium and cerium characterised in that compositions of substances are represented by chemical formulae Ce_xLu_2+2y−xSi_1−yO_5+y, Ce_xLi_q+pLu_{2−p+2y−x−z}A_zSi_1−yO_5+y−p, Ce_xLi_q+pLu_{9.33−x−p−z}□_0.67A_zSi₆O_26−p, where A is at least one element selected from group consisting of Gd, Sc, Y, La, Eu, Tb, x is value between 1×10⁻⁴ f.units and 0.02 f.units., y is value between 0.024 f.units and 0.09 f.units, z is value does not exceeding 0.05 f.units, q is value does not exceeding 0.2 f.units, p is value does not exceeding 0.05 f.units. Achievable technical result is the scintillating substance having high density, high light yield, low afterglow, and low percentage loss during fabrication of scintillating elements.

A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.

The present invention discloses a solid structure glass with a thin cross-sectional plane and a method for making the same. The solid structure glass includes an inner surface and an outer surface each combined of a curved surface, or at least two curved surfaces, or a curved surface and at least one flat surface, or at least two flat surfaces. As a result, the solid structure glass can easily be made with different shapes so as to be especially compatible with the form factor of products. Besides, the solid structure glass is made by heating a glass preform and a mold together into a forming temperature of the glass preform under condition that the glass preform is in a softened state.

An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and the charge carriers produced thereby are transported through the thin conductor through the adjacent potential energy barrier. The open circuit voltage of the solar cell can be manipulated by choosing from among a wide selection of materials making up the thin conductor, the charge separation layer, and the back ohmic layer.

The inventions relate to the scintillation substances and they may be utilized in nuclear physics, medecine and oil industry for recording and measurements of X-ray, gamma -ray and alpha- ray, nondestructive testing of solid states structure, three-dimensional positron-emission tomography and X-ray computer tomography and fluorography. The scintillating substances based on a silicate comprising a lutetium (Lu) and cerium (Ce) characterised in that the compositions of substances are represented by the chemical formulae CexLu2+2y-xSi1-yO5+y CexLiq+pLu2-p+2y-x-zAzSi1-yO5+y-p CexLiq+pLu9,33-x-p-z 0,67AzSi6O26-p where A is at least one element selected from the group consisting of Gd, Sc, Y, La, Eu, Tb, x ia a value between 1x10<-4>f. units and 0.02 f. units., y is a value between 0.024 f. units and 0.09 f. units, z is a value does not exceeding 0.05 f. units, q is a value does not exceeding 0.2 f. units, p is a value does not exceeding 0.05 f. units, CexLi1+q+pLu9-x-p-zAzSi6O26-p z is a value does not exceeding 8.9 f. units. The achievable technical result is the scintillating substance having a high density, a high light yield, a low afterglow, and a low percentage loss during fabrication of scintillating elements for three-dimensional tomograph (PET).

The present invention relates to a set of multi-doped cerium-activated scintillation materials of the solid solutions on the basis of the rare earth silicate, comprising lutetium and having compositions represented by the chemical formulas: (Lu_2−w−x+2yA_wCe_xSi_1−y)_1−zMe_xJ_jO_q and (Lu_{2−w−x−2y}A_wCe_xSi_1+y)_1−zMe_zJ_jO_q. The invention is useful for detection of elementary particles and nuclei in high-energy physics, nuclear industry; medicine, Positron Emission Tomography (TOF PET and DOI PET scanners) and Single Photon Emission Computed Tomography (SPECT), Positron Emission Tomography with Magnetic Resonance imaging (PET/MR); X-ray computer fluorography; non-destructive testing of solid state structure, including airport security systems, the Gamma-ray systems for the inspection of trucks and cargo containers.

The invention discloses a TEC (Thermo Electric Cooler) temperature control module for a power battery pack. The TEC temperature control module comprises a semiconductor chilling plate and a fastener,wherein the semiconductor chilling plate has a hot end face and a cold end face; the hot end face is in close contact with the substrate surface of a radiator, and coated with a heat conducting medium; the cold end face is in close contact with the substrate surface of a cold guide substrate, and coated with a heat conducting medium; heat insulating cotton is arranged between the cold guide substrate and the cold end face; the surface of the cold guide substrate is provided with a soft heat conducting pad; the fastener is used for fastening the radiator and the cold guide substrate; and the semiconductor chilling plate is arranged between the radiator and the cold guide substrate. Through adoption of the TEC temperature control module, heat management of batteries in the power battery packin different application environments is realized; high-temperature refrigeration and low-temperature heating of the batteries can be realized at the same time through TEC polarity reversal; and theservice lives of the batteries are ensured effectively. A pure solid-state structure is adopted, so that leakage risk is prevented, and the security of the battery pack is enhanced effectively.

The invention discloses a Motto transistor and a fabrication method thereof. The method comprises the following steps of fabricating a grid on the surface of a substrate by a coating technique, and sequentially fabricating a grid dielectric layer and a channel layer on the surface of the grid; and fabricating a source and a drain on the surface, which is not covered by the channel layer, of the grid dielectric layer, and completing the fabrication of the Mott transistor with a bottom gird structure; or sequentially fabricating the channel layer and the grid dielectric layer on the surface of the substrate by the coating technique, fabricating the source and the drain on the surface, which is not covered by the grid dielectric layer, of the channel layer, fabricating the grid on the surface of the grid dielectric layer, and completing the fabrication of the Mott transistor with a top grid structure, wherein the channel layer is a Mott insulation body thin film, and the grid dielectric layer is a solid-state oxide proton conductor film. By the method, the full-solid-state structure of the Mott transistor is achieved, thus, the problems of liquid leakage and poor thermal stability are prevented when the fabricated Mott transistor is in Mott conversion, and finally, the problem of relatively poor stability of a traditional Mott transistor is effectively solved.

The invention discloses a Ta/W mixed heteropoly acid, a preparation method and application thereof in acid catalysis and proton conduction, belonging to the technical field of inorganic synthesis and acid catalysis. The invention has the essential technical scheme that the molecular formula of the Ta/W mixed heteropoly acid is H2O[P8W60Ta12(H2O)4(OH)8O236].125H2O, the Ta/W mixed heteropoly acid is composed of 1 tetramer Ta/W mixed heteropoly anion, 20 protons and 125 crystalline water molecules, and measured with dicinnamalacetone as an indicator in acetonitrile, the Hammett acid strength of the Ta/W mixed heteropoly acid is -2.91. The invention also discloses a preparation method of the Ta/W mixed heteropoly acid and application thereof in acid catalysis and proton conduction. The prepared Ta/W mixed heteropoly acid has the strongest acidity among the currently known heteropoly acids, and the strong acid property causes the Ta/W mixed heteropoly acid to have higher acid catalysis activity; and a large number of hydrogen bonds exist in the solid state structure of the prepared Ta/W mixed heteropoly acid and further form a hydrogen bond network, therefore the mixed heteropoly acid has stronger proton conducting power.

Replacement of the amorphous peptide domain of a structural biopolymer, such as silk from silkworms or spiders, with a nonpeptide segment while maintaining the β-sheet forming crystalline segments provides synthetic multiblock copolymers having solid-state structures and mechanical properties similar to the naturally occurring structural biopolymer is described herein. Such synthetic multiblock copolymers may be produced as films or fibers.

The invention relates to a copolymer donor material for a polymer solar cell light active layer and a preparation method of the copolymer donor material. The structural formula of the compound is shown as the accompanying diagram, wherein R1 is C4-C12 alkyl groups; R2 is C2-C8 alkyl groups; R3 is C4-C10 alkyl groups; n=8 to 100. The synthesis steps of the method are simple and mild, raw materials for synthesis are cheap, and the preparation cost is low; the obtained copolymer has good heat stability (the semi-decomposition temperature is greater than 280 DEG C), better solubility property and film forming performance, and is suitable for being used as a polymer solar cell active layer material; the lower band gap (1.2 to 2.8eV) is realized, the electronic transition energy is reduced, and meanwhile, the light absorbing range (300 to 110nm) of the material is increased. The copolymer donor material has a larger rigid conjugate structure and coplanarity; the ICT (intramolecular charge transfer) intensity is enhanced; meanwhile, the Pi-Pi accumulation among molecules in the solid structure is increased; the material is a polymer solar cell light active layer material with wide prospects.

Examples of the present invention include apparatus and methods for monitoring aging of an item. A solid-state structure is located within, adjacent to, or otherwise proximate the item, the solid-state structure including nanostructures. The electrical resistance and/or magnetization of the solid-state structure is determined to determine the degree of aging of the item. In representative examples, the solid-state structure includes nanostructures of a metal, such as a ferromagnetic metal, within a non-magnetic matrix, such as a semimetal, semiconductor, or insulator.

The invention relates to a long wavelength absorption copolymer material for an optical activity layer of a polymer solar cell. The structural formula of the compound is shown in the description, wherein R1 is C4-C12 alkyl group, R2 is C2-C8 alkyl group, R3 is C4-C10 alkyl group, and m and n are equal to 8-50. The synthesis steps of a method are simple and mild, the preparation cost is low, the band gap of the copolymer is relatively low, so that the light absorption range of the material is expanded while the electronic transition energy is reduced; the material is larger in rigid conjugated structure and coplanarity, the pi-pi stacking among molecules in a solid-state structure is improved while the charge transfer intensity in the molecule is strengthened, and the long wavelength absorption copolymer material is a material used for the optical activity layer of the polymer solar cell and has a broad prospect.