Solid-state structure comprising a battery and a variable resistor of which the resistance is controlled by variation of the concentration of active species in electrodes of the battery

A battery electrode and resistor technology, applied in the field of solid-state variable resistors, can solve the problems of power dissipation, high control voltage, high temperature, etc., and achieve the effect of a wide range of resistance values

Inactive Publication Date: 2009-10-14
KONINK PHILIPS ELECTRONICS NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This feature not only requires a high control voltage but also results in a large power dissipation in the MOSFET structure, which leads to high temperature

Method used

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  • Solid-state structure comprising a battery and a variable resistor of which the resistance is controlled by variation of the concentration of active species in electrodes of the battery
  • Solid-state structure comprising a battery and a variable resistor of which the resistance is controlled by variation of the concentration of active species in electrodes of the battery
  • Solid-state structure comprising a battery and a variable resistor of which the resistance is controlled by variation of the concentration of active species in electrodes of the battery

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Embodiment Construction

[0039] figure 1 A cross-sectional view of the all-solid-state thin-film battery disclosed in WO-A-2005 / 027245 is shown. Using the deposition and integration techniques described in this document, stacks can be fabricated which can be used to fabricate electrochemically tunable resistors. The stack comprises a substrate 1 on which a current collector 2 is deposited. An anode layer 3 is deposited on the current collector layer 2 and an electrolyte layer 4 is deposited on the anode layer 3 . A cathode layer 5 is deposited on the electrolyte layer 4 and a current collector layer 6 is deposited thereon. The laminated structure thus obtained is described in WO-A-2005 / 027245.

[0040] exist figure 1 A battery in a discharged state is depicted in . In this case, the anode is fully de-lithiated (and the cathode is fully lithiated). The resistance of the anode can be measured and is approximately equal to that of the amorphous element silicon.

[0041] In the charged state, the a...

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Abstract

Presently, many variations of possible integrated resistors are utilized in IC design. However, depending on the electrical circuit it is often desirable that a resistor does not have a constant value, but rather that such a resistor has a variable controllable value. The invention relates to a solid-state variable resistor. The invention also relates to an electronic device, comprising such a solid-state variable resistor. The invention further relates to a method for producing a solid-state variable resistor.

Description

technical field [0001] The invention relates to a solid variable resistor. The invention also relates to an electronic device comprising such a solid state variable resistor. The invention further relates to a method for manufacturing a solid state variable resistor. Background technique [0002] Currently, many variations of possible integrated resistors are utilized in IC designs. However, depending on the circuit, it is often desirable not for a resistor to have a constant value, but rather for such a resistor to have a variable, controllable value. Currently, MOSFETs can be utilized as adjustable or variable resistors. In these devices, the gate voltage can adjust the resistance value across the semiconductor channel. In most MOSFETs, it is difficult to precisely tune the precise resistance of the semiconductor channel. Often only the low ("on" state) and high ("off" state) resistance states are used. This is directly related to the fact that below the threshold vo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M10/04H01M10/34H01M10/40H01C10/00H01M10/052H01M10/056H01M10/0562H01M10/0585H01M10/36
CPCY02E60/124H01M10/0436Y02E60/122H01M10/056H01M10/347H01M10/0585H01C10/14H01M10/052H01M6/40H01M2300/0068H01M10/0562Y02E60/10Y02P70/50
Inventor R·A·H·尼森P·H·L·诺滕J·H·G·奥普赫特维尔德R·H·W·皮南伯格
Owner KONINK PHILIPS ELECTRONICS NV
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