113 results about "Kelvin" patented technology

Apparatus and methods for testing conductive bumps or target test points on integrated circuits. A multiplicity of probes are extended through a support substrate. At least one of the multiplicity of probe locations include a second electrically isolated probe such that the test point is in contact with two probes. One of the two probes provides a voltage to the test point and the second probe sensing the voltage so as to provide a Kelvin connection.

The electrical measuring apparatus (17) and temperature sensing apparatus minimises the number of connections required for each contact (30, 31) of a battery (18). The present invention measures the core temperature of the battery (18) which is useful in monitoring the health of the battery (18). The apparatus comprises first connection means to connect to the first contact (30) of the battery (18) and second connection means to connect to the second contact (31) of the battery (18). The apparatus includes a thermistor (36) which connects in series with one lead (32) of the connecting means. Accordingly, the apparatus does not require the temperature sensor (36) to be independently connected to the battery (18).

A particulate form carbon pyrolyzate adsorbent, having the following characteristics: (a) CO₂ capacity greater than 105 cc/gram at one bar pressure and temperature of 273° Kelvin; (b) CO₂ Working Capacity greater than 7.0 weight percent; (c) CO₂ heats of adsorption and desorption each of which is in a range of from 10 to 50 kJ/mole; and (d) a CO₂/N₂ Henry's Law Separation Factor greater than 5. The carbon pyrolyzate material can be formed from a polyvinylidene chloride-based polymer or copolymer, or other suitable resin material, to provide an adsorbent that is useful for carbon dioxide capture applications, e.g., in treatment of flue gases from coal-fired power generation plants.

The invention provides a Kelvin probe force microscopy and a measuring method thereof. The microscopy comprises a scanning head (1), a low-frequency voltage signal generator (2), a high-frequency voltage signal generator (3), a high-frequency vibration signal detector (4), a low-frequency vibration signal detector (5), a voltage signal superimposer (6), an offset voltage controller (7) and a main controller (8), wherein the output ends of the low-frequency voltage signal generator, the high-frequency voltage signal generator and the main controller are all electrically connected with the scanning head; the input end and the output end of the high-frequency vibration signal detector are respectively electrically connected with the scanning head and the offset voltage controller; the output end of the offset voltage controller is electrically connected with the main controller; and the input end and the output end of the low-frequency vibration signal detector are respectively electrically connected with the scanning head and the main controller. The measuring method can not affect the original measuring function of the atomic force microscopy and can improve the spatial resolution and the sensitivity of the Kelvin probe force microscopy.

A welding apparatus for welding workpieces of high-temperature superalloys is provided. The welding apparatus includes a heat source for producing a heat input zone on the workpiece surface, a supplying device for supplying welding filler into the heat input zone and a transporting device for producing a relative movement between the heat source and the supplying device on the one hand and the workpiece surface on the other hand. The welding apparatus further includes a control unit with a control program, which carries out the relative movement in such a way that the welding power and the diameter of the heat input zone are set such that the cooling rate during the solidifying of the material is at least 8000 Kelvins per second.

The invention discloses a packaging structure and a packaging method for a silicon carbide power device. The packaging structure comprises a direct bond copper (DBC) ceramic substrate, a silicon carbide power device, a PCB, leads and a shell and forms a half-bridge circuit structure formed by the silicon carbide power device. According to the packaging structure and the packaging method provided by the invention, the area of a power circuit can be effectively reduced, conductors with opposite current flowing directions are formed during a commutation process by a switch transistor, mutual inductance offset is used for reducing parasitic inductance of a commutation circuit, and overvoltage and oscillation during the switching process can be effectively reduced; driving signal leads adopt a Kelvin connection mode and are vertical to power leads, a role of effectively reducing coupling between a driving circuit and a power circuit is played, and driving stability is enhanced; the DBC substrate and the PCB are welded thoroughly, and packaging reliability is enhanced; and power terminals and signal terminals are directly included in the PCB, thereby reducing contact resistance and parasitic inductance brought by extra terminals and achieving effects of reducing the cost.

Terminals (2, 502) of a device under test (DUT) are connected to corresponding contact pads or leads by a series of electrically conductive contacts. Each terminal testing connects with both a “force” contact and a “sense” contact. In one embodiment, the sense contact (770) partially or completely laterally surrounds the force contact (700). In order to increase the contact surface, the force contact, in a spring pin (700) configuration contacts the device under test terminal at that portion of the lead which is curved or angled, rather than orthogonal to the pin.

The invention provides a structure for measuring electric property change of MOSFET (metal-oxide-semiconductor field effect transistor) device, which comprises an active area, a grid electrode located on the active area, wherein the grid electrode is a resistor in Kelvin structure; two ends of the grid electrode have two polyresistor end points. The structure of the invention has the advantage that the influences of the grid length change, the gate oxide thickness change and the doping change to the MOSFET device are distinguished and determined; and the three process changes are the main factors of electrical fluctuations of device and are the primary parameters for building a monte carlo model and a corner mode of the device; the determination of the three process changes can lead the monte carlo model and the corner model to be more precise, which is quite important under the condition that the requirements on process corner models that is more than 90nm are higher and higher, and in favour of extracting a stress model of the device for placing numbers and distances of different virtual grid electrodes in more than 45nm of process. The invention further provides a method for measuring electric property change of MOSFET device.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

A current sense resistor circuit using Kelvin connection sense features provides an average voltage across net sense resistance and average voltage across net reference resistance to be available at the Kelvin connection points. The Kelvin connections can be used by a negative feedback gain loop to hold the average current through respective reference elements and sense elements substantially constant.

A portable color corrected light for the correct matching of tooth shades and acceleration of tooth whitening has been developed. In order to accurately match the tint and hue (true color) of teeth, the device provides 5500 to 6500 Kelvin, ambient-independent light with the ability to block or overwhelm ambient light to get a precise “color” reading of that tooth. The same light can accelerate the tooth whitening process with the addition of photo-accelerators to increase the decomposition of H₂O₂ or other peroxide whitening material. In addition, the same light can also serve as a dental operatory light which provides a closer to daylight illumination than conventional halogen dental lights.

An evaporation unit for evaporating an aqueous solution including at least one reducing agent precursor, includes at least one evaporator cavity defined by a wall made of a material containing titanium. A heat-imparting layer disposed outside the evaporator cavity is made of a material having a thermal conductivity of at least 100 W/mK (Watts per meter and Kelvin) and is connected to the evaporator cavity in a heat-conducting manner. A heating layer disposed outside the heat-imparting layer is connected in a materially integral manner to the heat-imparting layer. The evaporator unit can be controlled in a highly dynamic manner, thereby enabling a sufficiently high amount of ammonia to be produced even during rapid load changes and consequently significant increases in the concentration of nitric oxide in the exhaust gas of the internal combustion engine. A device and a motor vehicle having the evaporation unit are also provided.

The invention provides a method for clay inter-particle pore equivalent pore size. The method comprises the steps of fitting to obtain a whole soil-water characteristic curve, selecting data with matric suction being 144000kPa to 0kPa, converting the matric suction into relative humidity (RH), converting mass water content into water-filled pore volume in soil mass per unit mass, calculating a Kelvin radius, then calculating an actual pore radius and the thickness of a water film, then calculating an average pore radius, calculating the equivalent capillary diameter of the soil mass, and finally calculating the maximum height of capillary rise. By taking the whole soil-water characteristic curve as a carrier, on the basis of existing research, through a large quantity of experiments and combining with the theory of statistics, the equivalent method of pore size of soil samples with different clay content is obtained by derivation, and a favorable approach is provided for the calculation of the maximum height of capillary rise.