Packaging structure and packaging method for silicon carbide power device

Abstract

The invention discloses a packaging structure and a packaging method for a silicon carbide power device. The packaging structure comprises a direct bond copper (DBC) ceramic substrate, a silicon carbide power device, a PCB, leads and a shell and forms a half-bridge circuit structure formed by the silicon carbide power device. According to the packaging structure and the packaging method provided by the invention, the area of a power circuit can be effectively reduced, conductors with opposite current flowing directions are formed during a commutation process by a switch transistor, mutual inductance offset is used for reducing parasitic inductance of a commutation circuit, and overvoltage and oscillation during the switching process can be effectively reduced; driving signal leads adopt a Kelvin connection mode and are vertical to power leads, a role of effectively reducing coupling between a driving circuit and a power circuit is played, and driving stability is enhanced; the DBC substrate and the PCB are welded thoroughly, and packaging reliability is enhanced; and power terminals and signal terminals are directly included in the PCB, thereby reducing contact resistance and parasitic inductance brought by extra terminals and achieving effects of reducing the cost.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and more specifically relates to a packaging structure and a packaging method of a silicon carbide power device. Background technique [0002] As a wide-bandgap semiconductor material, silicon carbide semiconductor not only has high breakdown electric field strength and good thermal stability, but also has the characteristics of high carrier saturation drift speed and high thermal conductivity. It can be used to manufacture various high temperature resistant high High-frequency, high-efficiency and high-power devices are used in occasions where traditional silicon devices are incompetent. In theory, the switching frequency of silicon carbide devices can reach up to megahertz, but the packaging structure of existing commercial devices greatly limits the high-frequency application of silicon carbide devices, mainly due to the noise caused by the interconnection of substrates, chips, and...

AI Technical Summary

Problems solved by technology

Among them, the bonding wire has a simple structure and high reliability, but the package size on one side is large and the parasitic inductance is large; the flat plate structure has small parasitic parameters and good heat dissipation, but the process is complicated and the reliability is poor; the hybrid packaging structure is a bonded wire structure and The combination of direct copper-clad ceramic substrate technology has the advantages of both, but the existing hybrid packaging structure still has the problems of large parasitic parameters, small soldering area resulting in reduced reliability, and the need for external terminals to connect to external circuits. Therefore, it is necessary Optimize the packaging structure and packaging method

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