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1026results about How to "Produced cost-effectively" patented technology

Single-chip imager system with programmable dynamic range

The imager system of the invention, provided in a semiconductor substrate, includes a plurality of photosensitive, charge integrating pixels that are arranged in rows and columns of a pixel array for capturing illumination of a scene to be imaged. Each pixel includes a photogenerated charge accumulation region of the semiconductor substrate and a sense node at which an electrical signal, indicative of pixel charge accumulation, can be measured without discharging the accumulation region. Pixel access control circuitry is connected to pixel array rows and columns to deliver pixel access signals generated by the access control circuitry for independently accessing a selected pixel in the array. An input interface circuit is connected to accept a dynamic range specification input for the array pixels. Integration control circuitry is connected to access a selected pixel of the array to read the sense node electrical signal of the selected pixel, and configured to generate pixel-specific integration control signals delivered to the selected pixel, independent of other pixels, based on dynamic range specification input provided by the input interface circuit. An output interface circuit is connected to the pixel array to produce output image data based on sense node electrical signals from the pixel array.
Owner:MASSACHUSETTS INST OF TECH

Media Delivery System and a Portable Communications Module for Audio and Remote Control of Interactive Toys or Devices

A portable communications module (600) of FIG. 6 has an input (621) coupled to receive an incident signal. The input (621) split out a first audio channel containing a context audio track from the incident signal and directs the first audio channel along a first audio output path for selective audio output from a speaker (634, 620) either internally within or external to the module. The input (621)also directs a second audio channel in the incident signal to an RF audio transmitter chain for broadcast, the second audio channel comprising a composite audio signal from a plurality of audio tracks, each audio track embedded with a unique activation code that is present for substantially an entire duration of audio activity in each audio segment of each track. The input (621) is further arranged to apply a tone encoded signal in the incident signal to at least a tone decoder (640) in a data transmitter chain distinct from the audio transmitter chain (642). A microcontroller (650), responsive to recovered data, is arranged to translate the recovered data into a control signal related to functional control of remote equipment (102). And a data transmit chain (660) operates to modulate the control signal onto a carrier for broadcast to the remote equipment to effect its operational control. The tone encoded data is effectively filtered within the portable communications module to an extent that it is not amplified within the first audio output path and is not processed by the RF audio transmitter chain.
Owner:REGLER

High-frequency switching transistor and high-frequency circuit

A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.
Owner:INFINEON TECH AG

High-frequency switching transistor and high-frequency circuit

A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.
Owner:INFINEON TECH AG
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