It is an object to provide a method for, after a
semiconductor film is separated, reprocessing a separated bond substrate into a reprocessed bond substrate which can be used for manufacturing an
SOI substrate. The method for, after a
semiconductor film is separated, reprocessing a separated bond substrate into a reprocessed bond substrate which can be used for manufacturing an
SOI substrate includes the steps of forming an insulating film over a bond substrate; adding ions from a surface of the bond substrate to form an
embrittlement layer; bonding the bond substrate to a glass substrate with the insulating film interposed therebetween; separating, at the
embrittlement layer, the bond substrate into a
semiconductor film which is bonded to the glass substrate with the insulating film interposed therebetween and a separated bond substrate; performing first wet
etching using a solution containing
hydrofluoric acid as an etchant on the separated bond substrate; performing second wet
etching using an organic alkaline
aqueous solution as an etchant on the separated bond substrate; performing
thermal oxidation treatment on the separated bond substrate in an oxidizing
atmosphere to which a gas containing
halogen is added to form an
oxide film on a surface of the separated bond substrate; performing third wet
etching using a solution containing
hydrofluoric acid as an etchant on the
oxide film; and forming a reprocessed bond substrate by performing
polishing on the separated bond substrate.