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Kelvin probe force microscopy and measuring method thereof

A Kelvin probe force and microscope technology, which is applied in scanning probe microscopy, measuring devices, scanning probe technology, etc., can solve the problems of Kelvin probe force microscope application limitations and achieve the goal of improving spatial resolution and sensitivity Effect

Inactive Publication Date: 2010-07-28
SUN YAT SEN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In the prior art, the Kelvin probe force microscope working in the atmospheric environment usually only utilizes the first vibration mode of the micro-cantilever probe, and does not utilize other higher-order vibration modes, which brings great advantages to the application of the Kelvin probe force microscope. limitations

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  • Kelvin probe force microscopy and measuring method thereof

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with the accompanying drawings.

[0027] The structure of the present invention is as attached figure 1 As shown, it includes scanning head 1, low-frequency voltage signal generator 2, high-frequency voltage signal generator 3, high-frequency vibration signal detector 4, low-frequency vibration signal detector 5, high-frequency voltage and compensation voltage signal superimposer 6, Kelvin Feedback controller 7, controller 8, wherein the scan head 1 includes a conductive microcantilever probe 1-1, a probe position sensor 1-2, a piezoelectric vibrator 1-3, a sample 1-4, and a piezoelectric scanner 1-5, the Kelvin feedback controller 7 is used as a compensation voltage controller, and the controller 8 is used as a main controller.

[0028] The measurement method of the invention does not affect the original measurement function of the static atomic force microscope. Before scanning the surface potentia...

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Abstract

The invention provides a Kelvin probe force microscopy and a measuring method thereof. The microscopy comprises a scanning head (1), a low-frequency voltage signal generator (2), a high-frequency voltage signal generator (3), a high-frequency vibration signal detector (4), a low-frequency vibration signal detector (5), a voltage signal superimposer (6), an offset voltage controller (7) and a main controller (8), wherein the output ends of the low-frequency voltage signal generator, the high-frequency voltage signal generator and the main controller are all electrically connected with the scanning head; the input end and the output end of the high-frequency vibration signal detector are respectively electrically connected with the scanning head and the offset voltage controller; the output end of the offset voltage controller is electrically connected with the main controller; and the input end and the output end of the low-frequency vibration signal detector are respectively electrically connected with the scanning head and the main controller. The measuring method can not affect the original measuring function of the atomic force microscopy and can improve the spatial resolution and the sensitivity of the Kelvin probe force microscopy.

Description

technical field [0001] The invention belongs to the field of Kelvin probe force microscope, in particular to a Kelvin probe force microscope. Background technique [0002] Kelvin Probe Force Microscopy (KPFM) is a technique based on Atomic force microscopy (AFM), which can measure the local potential of a sample and its two-dimensional distribution. Kelvin probe force microscopy has become an important means of characterizing the microstructure and properties of materials. [0003] Like electrostatic force microscopy (EFM), Kelvin probe force microscopy requires an atomic force microscope to obtain surface topography images of the sample. The main difference between the Kelvin probe force microscope and the electrostatic force microscope is that the Kelvin probe force microscope applies a compensation voltage on the probe or the sample, and adjusts the compensation voltage in real time through a dedicated feedback control circuit so that the electrostatic force between the ...

Claims

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Application Information

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IPC IPC(8): G01Q60/30
Inventor 丁喜冬林国淙张进修梁仲文李超
Owner SUN YAT SEN UNIV
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