403 results about "Tunneling current" patented technology

A three-dimensional flash memory array incorporates thin film transistors having a charge storage dielectric arranged in series-connected NAND strings to achieve a 4F2 memory cell layout. The memory array may be programmed and erased using only tunneling currents, and no leakage paths are formed through non-selected memory cells. Each NAND string includes two block select devices for respectively coupling one end of the NAND string to a global bit line, and the other end to a shared bias node. Pairs of NAND strings within a block share the same global bit line. The memory cells are preferably depletion mode SONOS devices, as are the block select devices. The memory cells may be programmed to a near depletion threshold voltage, and the block select devices are maintained in a programmed state having a near depletion mode threshold voltage. NAND strings on more than one layer may be connected to global bit lines on a single layer. By interleaving the NAND strings on each memory level and using two shared bias nodes per block, very little additional overhead is required for the switch devices at each end of the NAND strings. The NAND strings on different memory levels are preferably connected together by way of vertical stacked vias, each preferably connecting to more than one memory level. Each memory level may be produced with less than three masks per level.

Systems and methods of identifying molecules of polymers such as, for example, a nucleic acid, are described. The method involves centering a bias voltage across a pair of nanoelectrodes separated by a channel that corresponds to one of any of the energy differences between any two internal energy levels of a molecule of interest, and modulating the bias voltage with a modulation waveform while the molecule of interest is in the channel. An electrical signal characteristic of the molecule of interest is derived from the tunneling current between the nanoelectrodes, and the characteristic electrical signal is compared with known values of the signal for chemically-known molecules in order to identify the molecule of interest. Multiple pairs of nano-electrodes may be employed to identify more reliably a single molecule or multiple molecules.

According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.

A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer / a first ferromagnetic layer / a first dielectric layer / a second ferromagnetic layer / a second dielectric layer / a third ferromagnetic layer / a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy / a Ni—Fe alloy / a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.