249 results about "Backward diode" patented technology

The invention discloses a non-complementary flyback active clamp converter. The non-complementary flyback active clamp converter comprises a transformer, a main switching tube, a clamp switching tube, a clamp capacitor and a drive module. The drive module outputs main drive signals to the drive end of the main switching tube, and the driving signals are used for controlling the main switching tube to be alternately switched on and switched off. The drive module outputs clamp drive signals to the drive end of the clamp switching tube. The clamp drive signals and the main drive signals have the same period. Each period comprises a first pulse signal which is generated when the switching-on state of the main switching tube is converted to the switching-off state, a second pulse signal which is generated when the main switching tube is in the switching-off state, and a signal which is generated at the remaining time and used for controlling the switching-on and the switching-off of the clamp switching tube, wherein the first pulse signal and the second pulse signal are independent of each other and both used for controlling the switching-on and the switching-off of the clamp switching tube. By the adoption of the non-complementary flyback active clamp converter, it is guaranteed that a high-frequency current generated when the clamp capacitor is charged fully flows through the clamp switching tube and avoids a backward diode of the clamp switching tube.

A copackaged electronic device comprises a diode device having an anode coupled to a drain electrode of a switching device and a cathode capable of being coupled to an external circuit. The switching device may be controlled by an integrated circuit mounted on a source electrode of the switching device and electrically connected such that the integrated circuit is capable of controlling switching of the switching device. For example, the device is used in a power factor correction circuit. The diode device comprises at least one inverted diode having a solderable anode and a wire-bondable cathode.

The invention discloses a backward diode/global positioning system (BD/GPS) dual-mode time service-based time synchronization device. In the device, a frequency output pin of a rubidium clock X72 is connected with an input pin of an AND gate; an output pin of the AND gate is connected with an input pin of a complex programmable logic device (CPLD); an output end of a top dead center-general purpose 2 (TDC-GP2) chip of a time interval measuring instrument is connected with a digital signal processor (DSP) through a single program initiation (SPI) port; the DSP is connected with the rubidium clock through an RS232 serial port; an output end of a 1pps signal output by a BD/GPS dual-mode receiver is connected with the TDC-GP2 chip of the time interval measuring instrument; and an RS 232 port of the BD/GPS dual-mode receiver is connected with the DSP. The device has a simple structure and high stability and can adapt to a switchover time service mode; and the cost of the device is reduced, a system structure is simplified and the stability of the device is enhanced without accuracy loss.

The invented method for testing the pitaxial wafer of the light emitting diode (LED) belongs to the area of the test instrument. The positive and negative electrodes are set upon the surface of the epitaxial wafer of LED. The high-voltage constant current source is connected to the positive and negative electrode, making the p type layer and the n type layer in the epitaxial wafer of LED form thebackward diode. The breakdown of the backward diode caused by the high-voltage makes the entire circuit turn on so as to trigger off the luminescence of the luminous layer of the epitaxial wafer of LED. Thus, the target of the test is reached. The method is direct, safe and convenient. Moreover, the electric parameters such as the forward direction on-state voltage, the reverse-leakage current can be obtained if it is photo fluorescence.

The invention discloses a radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component. A light dope P type buried layer and a middle dope buried layer in the light dope P type buried layer are additionally arranged under a P type channel region. The base electrode resistance of a parasitic non-protein nitrogen (NPN) pipe can be reduced, so that snapback effect is not prone to be generated. A reversed diode formed by a source electrode, the channel and the buried layer can strangulate drain-source voltage of an LDMOS and can sink extra current on a substrate. Thick gate oxide at the drain electrode end can reduce hot carrier effect, and thin gate oxide at the source electrode end can improve transconductance of the component. The invention further discloses a manufacture method of the RF LDMOS component. In process realization, the manufacture method only adds two photoetching steps in an existing process so as to be easy to implement.

The embodiment of the invention provides a single-end forward power inverter, comprising a transformer T, a primary side switching tube Q1, a rectification filtering module and a clamping module. The rectification filtering module comprises a rectifier tube D1, an afterflow tube D2, a filter inductor L and a filter capacitor C2; the clamping module comprises a clamping tube Q2, a clamping capacitor C1, a discharging tube Q3 and a discharging backward diode D3, a serial branch consisting of the clamping tube Q2 and the clamping capacitor C1 is connected with two ends of the rectifier tube D1 in parallel, and a serial branch consisting of the discharging tube Q3 and the discharging backward diode D3 is connected with two ends of the afterflow tube D2 in parallel; and the clamping tube Q2 is reversely switched on and off with the discharging tube Q3 and the primary side switching tube Q1.

A DC inverter of electric energy inversion device is featured as using a high frequency isolated transformer commonly by two routes of double - barreled positive excitation inverters , connecting one end of two primary edge windings on said transformer to three level bridge arm and another end to two level bridge arm . Each bridge arm is formed by connecting backward diode with switching tube in series so there is no problem of power being directly connected through for bridge type of three level inverter raising so as to greatly raise the reliability of inverter.

The invention discloses a radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component. Based on a component structure using tungsten-subsidence electric connection, a middle doped P type buried layer is arranged in a P type heave doped region on one side on a source end channel in an ion injection mode after an ion injection process and a thermal propelling process in a channel and a light dope diffusion drift region. The P type buried layer can reduce base electrode resistance of a parasitic non-protein nitrogen (NPN) pipe, so that snapback effect is not prone to generate. A reversed diode formed by a source electrode, the channel and the buried layer can strangulate drain-source voltage of an LDMOS and can sink extra current on a substrate. The invention further discloses a manufacture method for the RF LDMOS component. In the process realization, the manufacture method only adds one step of ion injection based on an existing process so as to be easy to implement.

Provided are a display panel, a backward diode equipped on a bottom surface of the display panel, a packaging film for packaging the backward diode, and a pressure-sensitive adhesive layer formed between the display panel and the packaging film. The packaging film includes a first region corresponding to a top surface of the backward diode, and a second region extending from the first region and corresponding to a side surface of the backward diode. Due to the display device, a bezel region can be minimized.

A microwave and millimetric wave quartic frequency mixer is composed of a stopping direct coupler, two stage microstrip oper wires, a schottky reverse diode pair, two stage compact microphand resonance units, two microband high-low impedance line low pass filter. Since the used local frequency is 1/4 of the basic wave frequency mixer, its performance is increased greatly, and the compact microband resonance unit can either transfer the local signal and provide RF signal circuit or flexible adjust the idle terminal reactivity load, so as to suppress the idle frequency to reduce frequency conversion loss.

A temperature-protected semiconductor switch having a semiconductor switch element composed of a number of cells connected in parallel and an integrated reverse diode, and further having a temperature sensor wherein the semiconductor switch element and the temperature sensor are integrated together in a semiconductor body of a first conductivity type. Upon occurrence of an excess temperature, the temperature sensor generates a first signal. A charge carrier detector is also provided which generates a second signal given the occurrence of free charged carriers caused by the integrated reverse diode in the semiconductor body. The first and second signals are supplied to an evaluation means that, for examples, undertakes the shut-off of the semiconductor switch only in the case of a true excess temperature.

An array of backward diodes of a cathode layer adjacent to a first side of a non-uniform doping profile and an Antimonide-based tunnel barrier layer adjacent to a second side of the spacer layer have a monolithically integrated antenna bonded to each backward diode. The Antimonide-based tunnel barrier may be doped with, for example, a non-uniform delta doping profile. An imaging/detection device includes a 2D focal plane array of an array of backward diodes, wherein each backward diode is monolithically bonded to an antenna, which array is located at the back of an extended hemispherical lens, and wherein certain of the arrays are tilted for correcting optics aberrations. The antennas may be a bow-tie antenna, a planar log-periodic antenna, a double-slot with microstrip feed antenna, a spiral antenna, a helical antenna, a ring antenna, a dielectric rod antenna, or a double slot antenna with co-planar waveguide feed antenna.

There is provided a protection circuit of a field effect transistor having a structure which can be fabricated without restricting a pattern layout and without increasing a process step. A protection circuit of a field effect transistor is a protection circuit of a Schottky gate HFET, and is a circuit in which a forward direction diode and a reverse direction diode are cascade-connected to form a diode unit and two such diode units are connected in series, and a gate line connected to a gate electrode of the HFET is grounded through the protection circuit. The diodes are diodes formed integrally with the Schottky gate HFET which is protected against surge breakdown, and are constituted as Schottky barrier diodes made of an n+-GaAs cap layer formed on a GaAs substrate and Schottky electrodes formed on the n+-GaAs cap layer.

The invention discloses a train power supply system and a leakage protection device thereof. Electric-leakage protection assembly for vehicle, including leakage detection resistors, a ground switch and a reverse diode, a leakage detection unit, and a leakage detection unit are used for detecting two terminal voltages of the leakage detection resistor, judging that the positive pole of the electricnetwork leakage occurs when the voltage of the two terminal voltages of the leakage detection resistor is greater than the first preset voltage, and triggering the first circuit breaker to open to carry out the leakage protection operation of the train itself; A line leakage protection component is arrange corresponding to that traction substation, and is use for detecting the leakage of the positive pole of the electric network even when the time of the train leakage protection operation reaches the first preset time, and controlling the power supply line correspond to the train to trip to carry out the line leakage protection operation. Thus, the leakage protection is given priority to when the leakage occurs, and the normal operation of other trains is avoided.

The invention discloses a backward GPP (Glass Passivation Pellet) high voltage diode chip in an automobile module, and a production technology. The technology comprises the following steps of oxidation pretreatment, oxidation, photoetching, single-side oxidation layer removal, diffusion pretreatment, boron diffusion predeposition, boron diffusion, once phosphorus source/boron source diffusion, diffusion aftertreatment, N<+> surface mesa etching, electrophoresis, sintering, oxidation layer removal, nickel plating, gold plating and chip cutting. The obtained chip is in a P<++>-P<+>-N-N<+> type structure. According to the high voltage diode chip and the production technology, the defect of great electric leakage of a geminate axial diode is improved, damage to glass passivation protection during welding of a backward diode in a geminate GPP diode is avoided, an effective welding area is increased, and the whole heat dissipation function of the geminate diode is improved. An N-type substrate slice replaces a P-type substrate slice, and a backward GPP high voltage diode is manufactured in a deep N<+> surface corrosion groove, so that the backward GPP high voltage diode in the automobile module fills a gap in the technical field of domestic automobile modules.

The invention discloses a system for preventing reverse recovered charges in a DUT. The system is a current injection circuit connected to the two ends of the DUT in a forward bias mode. The injected current circuit comprises a pulse nS-level pulse signal generator formed by an SRD and a pulse edge acceleration circuit formed by a BG2 and a BG1, wherein the pulse edge acceleration circuit is tightly connected with the back of the pulse nS-level pulse signal generator and used for shortening the rising edge time and the falling edge time of pulses. The system has the advantages that the reverse recovered features of the DUT can be improved, the reverse recovered charges can be reduced, and the reverse recovered time can be shortened; meanwhile, switching losses and conduction losses of the DUT can be reduced, electromagnetic interference and surges can be restrained, and efficiency is improved.