252 results about "Backward diode" patented technology

The invention discloses a non-complementary flyback active clamp converter. The non-complementary flyback active clamp converter comprises a transformer, a main switching tube, a clamp switching tube, a clamp capacitor and a drive module. The drive module outputs main drive signals to the drive end of the main switching tube, and the driving signals are used for controlling the main switching tube to be alternately switched on and switched off. The drive module outputs clamp drive signals to the drive end of the clamp switching tube. The clamp drive signals and the main drive signals have the same period. Each period comprises a first pulse signal which is generated when the switching-on state of the main switching tube is converted to the switching-off state, a second pulse signal which is generated when the main switching tube is in the switching-off state, and a signal which is generated at the remaining time and used for controlling the switching-on and the switching-off of the clamp switching tube, wherein the first pulse signal and the second pulse signal are independent of each other and both used for controlling the switching-on and the switching-off of the clamp switching tube. By the adoption of the non-complementary flyback active clamp converter, it is guaranteed that a high-frequency current generated when the clamp capacitor is charged fully flows through the clamp switching tube and avoids a backward diode of the clamp switching tube.

A copackaged electronic device comprises a diode device having an anode coupled to a drain electrode of a switching device and a cathode capable of being coupled to an external circuit. The switching device may be controlled by an integrated circuit mounted on a source electrode of the switching device and electrically connected such that the integrated circuit is capable of controlling switching of the switching device. For example, the device is used in a power factor correction circuit. The diode device comprises at least one inverted diode having a solderable anode and a wire-bondable cathode.

A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (16, 16′, 160, 161). In some embodiments, at least one delta doping (30, 32) is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes (10, 10′, 100).

The invention discloses a backward diode / global positioning system (BD / GPS) dual-mode time service-based time synchronization device. In the device, a frequency output pin of a rubidium clock X72 is connected with an input pin of an AND gate; an output pin of the AND gate is connected with an input pin of a complex programmable logic device (CPLD); an output end of a top dead center-general purpose 2 (TDC-GP2) chip of a time interval measuring instrument is connected with a digital signal processor (DSP) through a single program initiation (SPI) port; the DSP is connected with the rubidium clock through an RS232 serial port; an output end of a 1pps signal output by a BD / GPS dual-mode receiver is connected with the TDC-GP2 chip of the time interval measuring instrument; and an RS 232 port of the BD / GPS dual-mode receiver is connected with the DSP. The device has a simple structure and high stability and can adapt to a switchover time service mode; and the cost of the device is reduced, a system structure is simplified and the stability of the device is enhanced without accuracy loss.

The invented method for testing the pitaxial wafer of the light emitting diode (LED) belongs to the area of the test instrument. The positive and negative electrodes are set upon the surface of the epitaxial wafer of LED. The high-voltage constant current source is connected to the positive and negative electrode, making the p type layer and the n type layer in the epitaxial wafer of LED form thebackward diode. The breakdown of the backward diode caused by the high-voltage makes the entire circuit turn on so as to trigger off the luminescence of the luminous layer of the epitaxial wafer of LED. Thus, the target of the test is reached. The method is direct, safe and convenient. Moreover, the electric parameters such as the forward direction on-state voltage, the reverse-leakage current can be obtained if it is photo fluorescence.

The invention discloses a radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component. A light dope P type buried layer and a middle dope buried layer in the light dope P type buried layer are additionally arranged under a P type channel region. The base electrode resistance of a parasitic non-protein nitrogen (NPN) pipe can be reduced, so that snapback effect is not prone to be generated. A reversed diode formed by a source electrode, the channel and the buried layer can strangulate drain-source voltage of an LDMOS and can sink extra current on a substrate. Thick gate oxide at the drain electrode end can reduce hot carrier effect, and thin gate oxide at the source electrode end can improve transconductance of the component. The invention further discloses a manufacture method of the RF LDMOS component. In process realization, the manufacture method only adds two photoetching steps in an existing process so as to be easy to implement.

The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.

A low loading capacitance on-chip electrostatic discharge (ESD) protection circuit for compound semiconductor power amplifiers is disclosed, which does not degrade the circuit RF performance. Its principle of operation and simulation results regarding capacitance loading, leakage current, degradation to RF performance are disclosed. The design, loading effect over frequency, robustness over process and temperature variation and application to an RF power amplifier is presented in detail. The ESD circuit couples an input to ground during ESD surges through a diode string coupled to the input, and a transistor switch or Darlington pair having its gate coupled to and triggered by the diode string. The Darlington pair couples the input to ground when triggered through a low impedance path in parallel to the diode string. A reverse diode also couples ground to the input on reverse surges.

A converter with synchronous rectification is driven in such a way so that the reverse currents do not build up and cause damage or limit the efficiency of the circuit. Negative currents are self-adjusted to very small percent of load current, so the converter will not have problem when in parallel with other modules. An auxiliary winding is used to allow an output inductor to drive the secondary side rectifiers thereby limiting their conduction time as reverse currents increase. The primary side conduction timer are extended by operation of their anti-diodes so that reverse currents are limited naturally without the use of dedicated load sensing and shutdown circuits.

A dual-channel electrostatic discharge protecting circuit based on RC-triggering is composed of a delay generation unit, a substrate trigger unit, a low-voltage grid trigger unit and an electrostaticdischarger. When positive electrostatic discharge occurs on a power supply, the delay generation unit in the protecting circuit can generate a delay pulse to respectively drive the substrate trigger unit and the low-voltage grid trigger unit, and the combined action of the substrate trigger unit and the low-voltage grid trigger unit reduces the threshold voltage of the electrostatic discharger, improves the opening speed of the electrostatic discharger and enhances the positive discharge performance of the electrostatic discharger; when negative electrostatic discharge occurs on a power line,a parasitic inverse diode between a source electrode in short circuit with the electrostatic discharger and a substrate and a drain electrode is mainly used for electric discharge to realize better negative static voltage protection; and the design circuit in the invention keeps closed in the case of normal power-on of the power supply and normal operation of a chip.

The embodiment of the invention provides a single-end forward power inverter, comprising a transformer T, a primary side switching tube Q1, a rectification filtering module and a clamping module. The rectification filtering module comprises a rectifier tube D1, an afterflow tube D2, a filter inductor L and a filter capacitor C2; the clamping module comprises a clamping tube Q2, a clamping capacitor C1, a discharging tube Q3 and a discharging backward diode D3, a serial branch consisting of the clamping tube Q2 and the clamping capacitor C1 is connected with two ends of the rectifier tube D1 in parallel, and a serial branch consisting of the discharging tube Q3 and the discharging backward diode D3 is connected with two ends of the afterflow tube D2 in parallel; and the clamping tube Q2 is reversely switched on and off with the discharging tube Q3 and the primary side switching tube Q1.

A DC inverter of electric energy inversion device is featured as using a high frequency isolated transformer commonly by two routes of double - barreled positive excitation inverters , connecting one end of two primary edge windings on said transformer to three level bridge arm and another end to two level bridge arm . Each bridge arm is formed by connecting backward diode with switching tube in series so there is no problem of power being directly connected through for bridge type of three level inverter raising so as to greatly raise the reliability of inverter.

A binary channel RC-LIGBT device and a manufacturing method therefor are disclosed. The invention belongs to the field of power semiconductor integrated circuits and specifically relates to a reverse conducting-LIGBT / RC-LIGBT and a manufacturing method therefor that are used for suppressing snapback phenomena of a conventional RC-LIGBT device, improving characteristics of backward diodes and improving device stability and reliability. The RC-LIGBT device disclosed in the invention has a unilateral electric conduction path having binary channels, the unilateral electric conduction path is formed by introducing a composite structure at a collector electrode end of the device, impact exerted on conduction characteristics by an N type collecting zone can be completely shielded in a forward direction LIGBT work mode, the snapback phenomena can be completely eliminated, the RC-LIGBT device disclosed in the invention has the same low conduction voltage drop as the conventional LIGBT, device stability and reliability can be improved, two freewheel channels are provided at the collector electrode end in a backward diode freewheel work mode, freewheeling capacity of the RC-LIGBT device is optimized, and the RC-LIGBT device is enabled to have a small conduction voltage drop.

The invention discloses a radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component. Based on a component structure using tungsten-subsidence electric connection, a middle doped P type buried layer is arranged in a P type heave doped region on one side on a source end channel in an ion injection mode after an ion injection process and a thermal propelling process in a channel and a light dope diffusion drift region. The P type buried layer can reduce base electrode resistance of a parasitic non-protein nitrogen (NPN) pipe, so that snapback effect is not prone to generate. A reversed diode formed by a source electrode, the channel and the buried layer can strangulate drain-source voltage of an LDMOS and can sink extra current on a substrate. The invention further discloses a manufacture method for the RF LDMOS component. In the process realization, the manufacture method only adds one step of ion injection based on an existing process so as to be easy to implement.

An electrostatic discharge (ESD) protection structure comprises a high voltage P type implanted region disposed underneath an N+ region. The high voltage P type implanted region and the N+ region form a reverse diode or a Zener diode depending on different doping densities. The ESD protection structure further comprises a plurality of P+ and N+ regions. The high voltage P type implanted region and the P+ and N+ regions form a semiconductor device having a breakdown characteristic. In one embodiment, the semiconductor device may be a bipolar PNP transistor. The bipolar PNP transistor and a Zener diode in series connection form an ESD protection circuit. In another embodiment, the semiconductor device may be a Silicon-Controlled Rectifier (SCR), which is series-connected with a reverse diode. Both embodiments provide a reliable ESD protection.

The invention discloses a method and an electric device for interacting cache descriptors. According to the electric device, a terminal device is internally and additively provided with an agency module, inlets of a BD (backward diode) transmission queue and a BD receiving queue are provided by the agency module for each process core, and pointer operation is carried out on the BD transmission queue and the BD receiving queue by the agency module, so that the writing operation of each process core to the BD transmission queue and the reading operation of each process core to the BD receiving queue can be guaranteed through the agency module, and the several-for-one completion of each process core to the indicator operation can be further avoided. Furthermore, after the method and the electric device can used, a self-rotating lock and a polling core do not need to be arranged in a multi-core CPU (central processing unit), so that the reduction of the whole efficiency of the multi-core CPU can be avoided.

Provided are a display panel, a backward diode equipped on a bottom surface of the display panel, a packaging film for packaging the backward diode, and a pressure-sensitive adhesive layer formed between the display panel and the packaging film. The packaging film includes a first region corresponding to a top surface of the backward diode, and a second region extending from the first region and corresponding to a side surface of the backward diode. Due to the display device, a bezel region can be minimized.

A microwave and millimetric wave quartic frequency mixer is composed of a stopping direct coupler, two stage microstrip oper wires, a schottky reverse diode pair, two stage compact microphand resonance units, two microband high-low impedance line low pass filter. Since the used local frequency is 1 / 4 of the basic wave frequency mixer, its performance is increased greatly, and the compact microband resonance unit can either transfer the local signal and provide RF signal circuit or flexible adjust the idle terminal reactivity load, so as to suppress the idle frequency to reduce frequency conversion loss.

A temperature-protected semiconductor switch having a semiconductor switch element composed of a number of cells connected in parallel and an integrated reverse diode, and further having a temperature sensor wherein the semiconductor switch element and the temperature sensor are integrated together in a semiconductor body of a first conductivity type. Upon occurrence of an excess temperature, the temperature sensor generates a first signal. A charge carrier detector is also provided which generates a second signal given the occurrence of free charged carriers caused by the integrated reverse diode in the semiconductor body. The first and second signals are supplied to an evaluation means that, for examples, undertakes the shut-off of the semiconductor switch only in the case of a true excess temperature.

An array of backward diodes of a cathode layer adjacent to a first side of a non-uniform doping profile and an Antimonide-based tunnel barrier layer adjacent to a second side of the spacer layer have a monolithically integrated antenna bonded to each backward diode. The Antimonide-based tunnel barrier may be doped with, for example, a non-uniform delta doping profile. An imaging / detection device includes a 2D focal plane array of an array of backward diodes, wherein each backward diode is monolithically bonded to an antenna, which array is located at the back of an extended hemispherical lens, and wherein certain of the arrays are tilted for correcting optics aberrations. The antennas may be a bow-tie antenna, a planar log-periodic antenna, a double-slot with microstrip feed antenna, a spiral antenna, a helical antenna, a ring antenna, a dielectric rod antenna, or a double slot antenna with co-planar waveguide feed antenna.

The invention belongs to the technical field of a power semiconductor, and particularly relates to a superjunction reverse conducting-insulated gate bipolar transistor (IGBT) with a collector groove. Compared with a traditional superjunction RC-IGBT structure, the superjunction RC-IGBT has the advantages that a collector groove structure is mainly introduced to a bottom current collection region, an N drift region at the bottom of the collector groove can be consumed by P-type strips when a new device is positively conducted and does not enter a bipolar mode, so that an electron current path is occupied, the effective electron concentration is reduced, the electron current distribution resistance around the current collection region is increased, and a snapback effect of the device can be eliminated by the new device under relatively small cell size; and when the new device is switched off, the collector structure has an effect equivalent to a buffer layer, and the device can be enabled to bear high pressure. The superjunction RC-IGBT has the beneficial effects that compared with the traditional superjunction RC-IGBT structure, the snapback effect can be eliminated under smaller cell size, meanwhile, the superjunction RC-IGBT has faster switch-off speed, and the current distribution is more uniform in a reverse diode mode.

There is provided a protection circuit of a field effect transistor having a structure which can be fabricated without restricting a pattern layout and without increasing a process step. A protection circuit of a field effect transistor is a protection circuit of a Schottky gate HFET, and is a circuit in which a forward direction diode and a reverse direction diode are cascade-connected to form a diode unit and two such diode units are connected in series, and a gate line connected to a gate electrode of the HFET is grounded through the protection circuit. The diodes are diodes formed integrally with the Schottky gate HFET which is protected against surge breakdown, and are constituted as Schottky barrier diodes made of an n+-GaAs cap layer formed on a GaAs substrate and Schottky electrodes formed on the n+-GaAs cap layer.

The invention discloses a train power supply system and a leakage protection device thereof. Electric-leakage protection assembly for vehicle, including leakage detection resistors, a ground switch and a reverse diode, a leakage detection unit, and a leakage detection unit are used for detecting two terminal voltages of the leakage detection resistor, judging that the positive pole of the electricnetwork leakage occurs when the voltage of the two terminal voltages of the leakage detection resistor is greater than the first preset voltage, and triggering the first circuit breaker to open to carry out the leakage protection operation of the train itself; A line leakage protection component is arrange corresponding to that traction substation, and is use for detecting the leakage of the positive pole of the electric network even when the time of the train leakage protection operation reaches the first preset time, and controlling the power supply line correspond to the train to trip to carry out the line leakage protection operation. Thus, the leakage protection is given priority to when the leakage occurs, and the normal operation of other trains is avoided.

The invention discloses OWTS power cable oscillation wave test equipment and a test method. The OWTS power cable oscillation wave test equipment comprises a DC high-voltage power supply, a capacitor, high-voltage electronic switches, an electric reactor, a backward diode and a partial discharge detection unit. The DC high-voltage power supply charges the capacitor and controls the high-voltage electronic switch to be conducted after charging is completed. A cable is charged by the capacitor via a quite short period of time, and then the other high-voltage electronic switch is controlled to be conducted. A weak damping loop is formed by the electric reactor, the cable and line resistance, and damped oscillation wave is generated. Acquisition and analysis of partial discharge signals of the cable are realized by using the partial discharge detection unit so that the insulation state of the power cable is finally acquired. The equipment is compact in structure and convenient for onsite testing, and range of cable capacity capable of being detected can be 0.05muF-6muF. Besides, the test process has no long time of DC charging on the cable so that cable insulation is not damaged.

The invention discloses a backward diode-triggered thyristor for electrostatic protection. The backward diode-triggered thyristor consists of an N well resistor, a P well, a P substrate resistor, a backward diode, a first bipolar transistor PNP and a second bipolar transistor NPN, wherein the N well resistor, the P well and the P substrate resistor are arranged on a P substrate; the backward diode consists of an N+ active injection region and the P well; the first bipolar transistor PNP consists of a P+ active injection region, an N well and the P substrate; the second bipolar transistor NPN consists of a second N well, the P substrate and a first N well; the first N well is embedded into the P well; and a first N+ active injection region is arranged in the P well. The backward diode-triggered thyristor for electrostatic protection forms a voltage clamp by utilizing the backward diode, the parasitic well resistor and the parasitic substrate resistor, realizes quick response to electrostatic discharge (ESD) pulses and the pre-enabling of a protective structure, and realizes low voltage triggering and adjustable maintaining voltage to further realize the electrostatic protective structure.

The present invention is energy recovering control circuit for electromobile and electromobile chassis with the circuit, belongs to the field of electromobile technology, and aims at solving the problem of recovering all the converted electric energy. The energy recovering control circuit consists of mainly a control circuit comprising microcomputer and electric speed regulating controller, a trigger in the motor loop, a contactor in the generator loop, a diode, two accumulators to constitute one high voltage charging branch and one low voltage charging branch connected in parallel, and a DC reversing step up circuit between two charging branchs. The present invention is used in chassis of electromobile, including electromobile with renewable energy source.

A power supply for a low stand-by power consumption electromagnetic heating device comprises a first power supply circuit, a controller and a second power supply circuit; a first AC (Alternating current) terminal of the rectification bridge stack of the first power supply circuit is connected with a first phase wire of the alternating current; a second AC terminal is connected with a second phase wire of the alternating current via an electromagnetic switch; and a negative terminal is connected with a first grounding wire; the controller is used to control the on-off of the electromagnetic switch; the second power supply circuit is used to supply power for a control circuit; the rectification circuit of the second power supply circuit comprises a first rectification loop and a second rectification loop; the first rectification loop consists of a first diode, a voltage dropping resistance, a first capacitance, a first reverse diode in the rectification bridge stack, and the electromagnetic switch which are sequentially connected by the first phase wire; the second rectification loop consists of a second diode, the voltage dropping resistance, the first capacitance, and a second reverse diode in the rectification bridge stack which are connected to the first phase wire by the second phase wire. The power supply circuit is concise and has low cost. The invention also provides an electromagnetic oven comprising an LC resonant circuit and the power supply.

The invention discloses a backward GPP (Glass Passivation Pellet) high voltage diode chip in an automobile module, and a production technology. The technology comprises the following steps of oxidation pretreatment, oxidation, photoetching, single-side oxidation layer removal, diffusion pretreatment, boron diffusion predeposition, boron diffusion, once phosphorus source / boron source diffusion, diffusion aftertreatment, N<+> surface mesa etching, electrophoresis, sintering, oxidation layer removal, nickel plating, gold plating and chip cutting. The obtained chip is in a P<++>-P<+>-N-N<+> type structure. According to the high voltage diode chip and the production technology, the defect of great electric leakage of a geminate axial diode is improved, damage to glass passivation protection during welding of a backward diode in a geminate GPP diode is avoided, an effective welding area is increased, and the whole heat dissipation function of the geminate diode is improved. An N-type substrate slice replaces a P-type substrate slice, and a backward GPP high voltage diode is manufactured in a deep N<+> surface corrosion groove, so that the backward GPP high voltage diode in the automobile module fills a gap in the technical field of domestic automobile modules.

The invention discloses a system for preventing reverse recovered charges in a DUT. The system is a current injection circuit connected to the two ends of the DUT in a forward bias mode. The injected current circuit comprises a pulse nS-level pulse signal generator formed by an SRD and a pulse edge acceleration circuit formed by a BG2 and a BG1, wherein the pulse edge acceleration circuit is tightly connected with the back of the pulse nS-level pulse signal generator and used for shortening the rising edge time and the falling edge time of pulses. The system has the advantages that the reverse recovered features of the DUT can be improved, the reverse recovered charges can be reduced, and the reverse recovered time can be shortened; meanwhile, switching losses and conduction losses of the DUT can be reduced, electromagnetic interference and surges can be restrained, and efficiency is improved.

The redundant energy stored on resonant inductance is transferred to clamping winding through electromagnetic induction to avoid strong oscillation by the resonant inductance and parasitic parameter, and the energy releasing loop is formed by the clamping winding and a bridge arm on the full-bridge convertor to release said redundant energy after the reverse recovery period is finished. It ensures that the clamping diode can be worked in soft-switch state for raising the reliability of the circuit.