43 results about "Backward diode" patented technology

The application discloses a GaN HEMT device integrated with a reverse diode and a preparation method thereof. The GaN HEMT device comprises a two-dimensional electron gas structure, a source electrode, a drain electrode, a P-GaN gate electrode, a passivation layer, a source field plate structure, a Schottky contact metal, an ohmic contact metal and a P-GaN layer. The Schottky contact metal and the surrounding structure thereof constitute a Schottky diode, and the P-GaN layer and the surrounding structure thereof constitute a P-i-N diode. The application integrates the parallel Schottky diode and P-i-N diode, and provides a new path for the reverse current of the GaN HEMT device. In the reverse conduction, the low reverse conduction voltage of the Schottky diode can be utilized, and the strong overcurrent capacity of the P-i-N diode can be exerted. The source field plate structure is utilized to build a reverse conduction loop, and the reverse conduction part is formed with the aid of the potential barrier layer. The reverse conduction part and the forward conduction part share the drain region, and the area is reduced.

The invention relates to the technical field of dual power supplies, and discloses a dual power supply system for a high-voltage box built-in battery, and the system comprises an AC / DC main power module which is used for converting a single-phase AC 220V input into a DC 24V DC output; the DC battery pack is formed by connecting lithium iron phosphate cells in series; the input end of the DC / DC standby power module is connected with the DC battery pack, and the output end of the DC / DC standby power module provides 23V DC voltage; the intelligent switching unit comprises a reverse diode group connected in parallel between the main circuit and the standby circuit, and is used for blocking the standby loop when the main power supply is normal and conducting the standby power supply when the interruption of the main power supply is less than or equal to 3ms; a battery management communication interface; and a grading protection mechanism. According to the invention, the battery, the standby power supply and the switching logic are all integrated in the high-voltage box to form an integrated dual-power system, external links such as an alternating-current cable, an air switch and an adapter between the UPS and the high-voltage box are thoroughly cancelled, and the reliability of the system is upgraded from a series structure to a parallel redundant structure.

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

The embodiment of the utility model provides an amplitude limiting amplification circuit and a radio frequency transceiver chip, the amplitude limiting amplification circuit comprises one stage of amplification units or multiple stages of amplification units connected in series, and each stage of amplification unit at least comprises an amplification transistor; the detection unit is connected with the signal input end of the amplitude limiting amplification circuit and used for detecting the input signal received by the amplitude limiting amplification circuit and then outputting a detection signal, and the amplitude of the detection signal is in positive correlation with the power of the input signal; at least one stage of amplification unit is provided with an amplitude limiting unit, the signal input end is connected with the control end of the amplification unit and the signal input end of the amplitude limiting amplification circuit, and the control end is connected with the signal output end of the detection unit; the detection signal is used for controlling on and off of the amplitude limiting unit; at least one end of the diode protection unit is connected with the control end of the amplification transistor, the diode protection unit comprises a forward diode string and / or a backward diode string, and the diode string comprises a diode or a plurality of diodes connected in series.

The utility model discloses a nine-channel constant current drive cascade circuit, and relates to a series of fields requiring intelligent control and memorizing of different scenes, such as LED illuminating lamp dimming, LED control protocols and the like. Comprising a DC power supply DC wiring terminal positive electrode, a DC power supply DC wiring terminal negative electrode, and current limiting resistors R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17 and R18. A protection resistor R19, a protection resistor R20 and a protection resistor R21; the LED lamp further comprises light emitting diodes D1, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17 and D18. The circuit also comprises capacitors C1, C2 and C3. Comprising backward diodes TD1 and TD2; the system also comprises a TM1926 chip U1, a TM1926 chip U2, and a micro control unit (MCU). The PWM brightness of the output port of the circuit can be independently set through an external controller, the number of peripheral devices is small, the circuit cost can be remarkably reduced, the performance is stable and reliable, and technical support is provided for merging TTL signal fantasy lamps into an integrated Internet of Things system.

The utility model discloses a high-efficiency linear direct-current power supply with a transformer secondary tap capable of zero-crossing automatic switching, which is characterized in that a 220V power supply is subjected to voltage reduction through a transformer T, terminals 4, 3, 2 and 1 of the transformer respectively output different alternating-current voltages, the terminals 4 and 1 are connected with the input end of a bridge rectifier B, the terminals 3 and 2 are respectively connected with a working ground through backward diodes D6 and D5, and the working ground is connected with the working ground through the reverse diodes D6 and D5. A transistor T1, resistors R1, R2, R3 and R4, a potentiometer P1 and a voltage stabilizing diode D7 form a grid trigger circuit of a one-way silicon controlled rectifier Th1, when small and medium loads are loaded, reverse breakdown of the D7 is just achieved by adjusting the voltage of the P1 and the sliding end, T1 is conducted, the silicon controlled rectifier Th1 is cut off, and a terminal 4-2 or a terminal 1-3 of a transformer T supplies power to the loads; when the load is heavy, the Uo drops, the result is that the sliding end voltage of the P1 cannot enable the D7 to be reversely broken down, the D7 is cut off, the T1 is cut off, the Th1 is conducted, and the transformer terminal 4-1 or 1-4 provides a power supply for the load.

The invention relates to a monitoring assembly for an electrical component, a semiconductor switch assembly having a monitoring function, and an energy system. An analysis unit (50) of the semiconductor switch assembly is configured to determine on the basis of a first voltage divider (20), a second voltage divider (25), and a measuring device (40), a short circuit and / or a deviation from desired switched states in a first semiconductor switch (10) having a first inverse diode and a second semiconductor switch (15) having a second inverse diode, the semiconductor switches (10, 15) being connected in series between an input terminal (30) and an output terminal (32) of the semiconductor switch assembly, in such a way that the inverse diodes thereof are arranged anti-serially. In addition, the semiconductor switch assembly is configured to determine, on the basis of a first switch (S1) and a second switch (S2), a corrective factor for establishing a balance between the first voltage divider (20) and the second voltage divider (25).

The present disclosure belongs to the field of nuclear power technology, and particularly relates to a transformer differential protection signal conversion circuit. In the present disclosure, a capacitor is connected in parallel with the coil of the first relay to form a parallel sub-module. One end of the parallel sub-module is grounded, and the other end of the parallel sub-module is connected to the fourth terminal through a first reverse diode; the input end of the first switch is connected to the first power supply through a second reverse diode. The first output end of the first switch is connected between the parallel sub-module and the first reverse diode, and the second output end of the first switch is connected to the third terminal; the input end of the second switch is connected to the first terminal, the first output end of the second switch is connected to the second terminal, and the second output end of the second switch is open; the transformer differential protection signal conversion circuit of the present disclosure converts the captured differential pulse signal into a normally closed contact signal and outputs it externally, so that the fire alarm system can receive the differential protection signal in a timely manner.

The invention relates to a method and a device for detecting a single permanently conductive defective semiconductor switch of the semiconductor switches (210, 340) of a semi-controlled H-bridge circuit (100) for setting an excitation current of a separately excited synchronous machine, wherein the semi-controlled H-bridge circuit (100) a bridge branch (200) with one of the semiconductor switches T1 (210) and a diode D3 (230) connected in series in reverse bias and a further bridge branch (300) comprising a further diode D2 (320) in reverse bias in series with another of the semiconductor switches T4 (340) as well as comprising a load branch (400) comprising an excitation winding (460) and a current measuring device (480) for measuring the current excitation current; wherein a control device (1200) generates two pulse-width modulated control signals (611, 621) of the same frequency, phase-shifted by half a period, for controlling the semiconductor switches (210, 340), wherein it is evaluated whether a change in the excitation current correlates its sign temporally with each of the nominal switching times (T1 ein , T4 aus , T4 ein , T1 aus ) one of the semiconductor switches (210, 340) changes, and if this is not the case, an error signal will be output.

The invention provides a reverse conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, the reverse conducting insulated gate bipolar transistor is characterized in that a first trench is a gate trench, a second trench is an emitter trench, and a third trench is an invalid gate trench; the first groove, the second groove and the third groove are sequentially arranged at intervals in the transverse direction parallel to the surface of the cell, the first groove and the second groove are connected through a fourth groove, and the fourth groove is a grid electrode groove; in the longitudinal direction, the second grooves are located between every two adjacent fourth grooves. The beneficial effects of the invention are that the gate trench is connected with the invalid gate trench through the transverse gate trench, thereby reducing the forward conduction voltage drop and conduction loss of the device; current channels are increased, so that current distribution is more uniform, heat loss is reduced, and reliability and power density of the device are improved; the polysilicon gates and the metal gates are repeatedly arranged at intervals in the transverse direction and the longitudinal direction of the emitter trench to form the diodes and the Schottky diodes which are regularly arranged, so that the current distribution of the backward diodes is more uniform.

The present invention provides a circuit for preventing high-voltage breakdown of consumable chips of printing equipment, which can detect all short-circuit faults on the basis of ensuring the normal operation of the chip. The circuit comprises: a comparator, a consumable chip, the consumable chip comprises a short-circuit detection foot, a sensor contact point, and a communication interface respectively connected to a host controller chip for communication; the sensor contact points work in a piezoelectric sensing manner; a GND interface is set in the communication interface, and an equivalent reverse diode is set between each of the remaining communication interfaces and the GND interface; the output end of the comparator is connected to the host controller chip, the positive input end of the comparator is connected to the short-circuit detection foot, and the reverse input end of the comparator is connected to a reference voltage Vref and grounded through resistors R1 and R2 respectively; a diode D1 is set between the GND interface and one of the detection feet in the short-circuit detection foot, the positive electrode of the diode D1 is connected to the GND interface, and one of the detection feet in the short-circuit detection foot is connected to the negative electrode of the diode D1.

The invention discloses an explosion-proof battery pack, and relates to the technical field of batteries. The explosion-proof battery pack comprises an ER14500 battery, a forward diode, a backward diode, a lithium super capacitor, a current-limiting resistor, a fuse and a temperature fuse, one ER14500 battery is connected in series with one forward diode in the forward direction to form a group of battery pack sub-modules; every two of the ten battery pack sub-modules are connected in parallel to form five battery pack modules; the five lithium super capacitors are respectively connected in parallel with the five battery pack modules in the forward direction; the five battery pack modules are connected in series through the PCBA; the five groups of battery pack modules which are connected in series are reversely connected in parallel with a reverse diode through a PCBA (Printed Circuit Board Assembly); and a fuse, a temperature fuse and a current-limiting resistor are connected to a positive line of the five battery pack modules to form the explosion-proof battery pack. The battery pack disclosed by the invention has strong safe use performance, can provide a reliable, stable and safe driving power supply, and can be suitable for flammable and explosive industries such as mining industry.

The present invention provides a bidirectional thyristor rectifier comprising: a substrate of a first conductivity type, a well region of a second conductivity type, a shallow trench isolation structure, six heavily doped regions of the first conductivity type, six heavily doped regions of the second conductivity type, and four electrostatic discharge (ESD) injection layers of the first conductivity type. In the well region, there are four active regions arranged side by side, and the middle active region has forward and reverse thyristors and the ESD injection layer, and the active regions on both sides have forward and reverse diodes, and a heavily doped region of the first conductivity type in contact with the ESD injection layer of the first conductivity type is arranged between the thyristor rectifier and the diode, so that the heavily doped region of the second conductivity type of the diode is electrically connected to the aforementioned heavily doped region of the first conductivity type, so that the entire bidirectional thyristor rectifier can add two low-voltage auxiliary trigger paths composed of forward and reverse diodes, so as to greatly reduce the trigger voltage of the bidirectional thyristor rectifier in the forward and reverse working modes.

The present application belongs to the field of security monitoring equipment, and relates to a security camera motor limit position protection circuit. The circuit includes a forward control circuit, based on the transistor Q3 controlling the first end of the motor to access the power supply, and driving the transistor Q6 to ground the second end of the motor; a reverse control circuit, based on the transistor Q4 controlling the second end of the motor to access the power supply, and driving the transistor Q5 to ground the first end of the motor; a rotation locking circuit, based on the transistor Q9 managing the output voltage of the control lock output interface, the control lock output interface connects the base of the transistor Q3 and the transistor Q4 through a reverse diode, the base of the transistor Q9 is connected before the motor grounding resistor R15, when the motor is normal, the base voltage of the transistor Q9 is low, when the motor is stuck, the base voltage of the transistor Q9 increases and turns on, so that the control lock output interface outputs a low level, and the motor power supply is cut off. The present application can prevent the motor from getting stuck and damaged, and improve the reliability and safety of the system.

The invention discloses a GaN HEMT device integrated with a backward diode and a preparation method of the GaN HEMT device. The GaN HEMT device comprises a two-dimensional electron gas structure, a source electrode, a drain electrode, a P-GaN grid electrode, a passivation layer, a source electrode field plate structure, Schottky contact metal, ohmic contact metal and a P-GaN layer. The Schottky contact metal and the surrounding structure of the Schottky contact metal form a Schottky diode, and the P-GaN layer and the surrounding structure of the P-GaN layer form a P-i-N diode. According to the GaN HEMT device, the Schottky diode and the P-i-N diode which are connected in parallel are integrated, and a new path is provided for reverse current of the GaN HEMT device. During reverse conduction, not only can the low reverse conduction voltage of the Schottky diode be utilized, but also the strong overcurrent capability of the P-i-N diode can be exerted; a reverse conducting loop is built by using the source field plate structure, and a reverse conducting part is formed by means of a barrier layer; therefore, the drain region is shared by the reverse conducting part and the forward conducting part, and the area is reduced.

The present invention relates to infinite auto power generation device No: 1 to 19 that can be used together in products to generate, store, amplify mechanic, DC, AC power without using external power, made with:(rechargeable) batteries or capacitors or electrical transformers with same voltage but different powers connected in parallel and / or in series,or insulated capacitor with 2 different electrodes separated by an insulator, (with holes)or magnet(s) & diodes with coils / transformers kept in a HV insulator,or transformers and electric motors with insulated magnetic alloy wire coils,or at least 1 circular magnet on an axis with magnet(s) with rod, U or other form,or at least 2 torsaded insulated wires separated by a HV insulator, kept insulated.or by using diodes, resistors, capacitors transistors between 2 batteriesor by using 2 inverted diodes on parallel kept on HV insulator

To provide a semiconductor device functioning as a Zenerdiode, and an electronic system including the same.SOLUTION: A semiconductor device of the present invention includes a substrate, a reverse diode, and a forward diode. The reverse diode includes a first channel layer, a first barrier layer, a first gate electrode, and a first source electrode and a first drain electrode located on both sides of the first gate electrode. The forward diode includes a second channel layer, a second barrier layer, a second gate electrode, and a second source electrode and a second drain electrode located on both sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and the first drain electrode of the reverse diode is connected to the second source electrode of the forward diode. The first channel layer has a different energy band gap than the first barrier layer.SELECTED DRAWING: Figure 4

The invention discloses a power device series connection voltage-sharing modulation circuit and method, the circuit comprises a plurality of power devices connected in series, the power side of each power device is provided with a buffer voltage-sharing circuit and / or the driving side of each power device is provided with a clamping voltage-sharing circuit. The buffer voltage-sharing circuit comprises a capacitor C1, a diode D3 and a coupling inductor with at least two windings, the positive electrode of the diode D3 is connected with the drain electrode of the power device, the negative electrode of the diode D3 is connected with the first end of the capacitor C1, and the second end of the capacitor C1 is connected with the source electrode of the power device; the clamping voltage-sharing circuit comprises a capacitor C3, a first backward diode and a second backward diode, the positive electrode of the first backward diode is connected with the grid electrode of the power device through a resistor, and the negative electrode of the first backward diode is connected with the first end of the capacitor C3 and the positive electrode of the second backward diode. The negative electrode of the second backward diode and the second end of the capacitor C3 are connected with the negative electrode of a diode D5. The positive electrode of the diode D5 is connected with the drain electrode of the power device.

An integrated circuit (IC) device includes a substrate, first and second semiconductor devices correspondingly in different first and second doped regions in the substrate. A gate of the first semiconductor device is electrically coupled to a source / drain of the second semiconductor device. The IC device further includes a first reverse diode electrically coupled between the substrate and a doped well. The doped well is in the first doped region and a source / drain of the first semiconductor device is in the doped well. Alternatively, the doped well is in the second doped region, and the source / drain of the second semiconductor device is in the doped well.

The invention relates to an infinite automatic power generation device numbering 1 to 19. Infinite automatic power generation devices numbered 1 to 19 can be used in combination in a product to generate, store, amplify mechanical, current direct current (DC), alternating current (AC) power without the need for an external power source. The manufacturing materials of the unlimited automatic power generation devices numbered from 1 to 19 are rechargeable batteries or capacitors or electric transformers which have the same voltage but different powers and are connected in parallel and / or in series; or an insulated capacitor having two different electrodes separated by an insulator (perforated); or a magnet and diode and coil / transformer held in the high voltage insulator; or the transformer and the motor are provided with insulating magnetic alloy coils; or at least one circular magnet is on the same axis with the rod, U-shaped or other forms of magnets; or at least two twisted insulated wires separated by a high-voltage insulator, the wires being used on the insulator; or a diode, a resistor, a capacitor and a transistor are used between the two batteries; or two backward diodes are connected in parallel on the high-voltage insulator.

The utility model discloses an operational amplifier circuit. The operational amplifier circuit comprises: an operational amplifier, a first parallel reverse diode module, a second parallel reverse diode module, a first capacitor module, a second capacitor module, a first resistor module and a second resistor module; wherein, the positive input end of the operational amplifier inputs a first voltage, the positive input end of the operational amplifier is electrically connected with the first end of the first parallel reverse diode module, the second end of the first parallel reverse diode module is electrically connected with the first end of the first resistor module, the second end of the first resistor module is connected with a bias voltage, the third end of the first resistor module is electrically connected with the negative output end of the operational amplifier, and the positive input end of the operational amplifier is electrically connected with the first end of the first capacitor module; the common-mode input end of the operational amplifier inputs a common-mode voltage. The operational amplifier circuit provided by the utility model can separate the common-mode voltage of input and output and improve the common-mode rejection ratio.

The utility model belongs to the technical field of LED lamp strips, and particularly relates to a stroboflash-free drive-free high-voltage lamp strip. A plurality of combined lamp strips are connected to the power supply null line and the power supply live line, and each combined lamp strip is formed by connecting a plurality of groups of assemblies and a plurality of fixed-value resistors in series in a crossed manner; the assembly is formed by connecting a forward diode and a backward diode in parallel, the positive electrode of the forward diode is connected with the negative electrode of the backward diode, and the negative electrode of the forward diode is connected with the positive electrode of the backward diode. An application circuit is optimized to realize no drive and no stroboflash, a bridge rectifier of an FPCB (Flexible Printed Circuit Board) can be omitted while the circuit is optimized, and meanwhile, the change of sine waves caused by alternating current mains supply is solved.

A power semiconductor module may include one or more of the following: a main substrate having at least one metallization layer; a semiconductor switch chip with a positive terminal on a positive terminal side and a negative terminal on a negative terminal side opposite to the positive terminal side adapted for switching a current from the positive terminal to the negative terminal; a diode chip with an anode on an anode side and a cathode on a cathode side opposite to the anode side adapted for blocking a current from the cathode to the anode, where the diode chip is bonded to the second area; a heat sink connected to the main substrate opposite to the semiconductor switch chip and the diode chip; and an auxiliary substrate having at least one metallization layer.

The utility model provides a rotating speed sampling circuit with state detection, the rotating speed sampling circuit is connected with a motor rotating speed output port, and the rotating speed sampling circuit comprises a rotating speed signal processing circuit which comprises a transient suppression diode, an amplitude limiting diode and a signal conversion circuit, one end of the signal conversion circuit is connected with a motor rotating speed output port through a current-limiting resistor and a first voltage division circuit; the end, connected with the motor rotating speed output port, of the current limiting resistor is further grounded through the transient suppression diode, the end, connected with the signal conversion circuit, of the current limiting resistor is further grounded through the amplitude limiting diode, and the other end of the signal conversion circuit is connected with a controller. And the rotating speed signal state acquisition circuit comprises a backward diode and a second voltage division circuit, the cathode of the backward diode is connected with the motor rotating speed output port, and the anode of the backward diode is connected with the controller through the second voltage division circuit.

The invention relates to a digital input assembly for an automation device, comprising: - an input terminal (E1, E2, E3) functioning as a digital input, - a ground connection (M), - a detection means (PE) having an input (1, 2, 3) for an input signal (I1, I2, I3) present at the input (1, 2, 3) and designed to detect a logic level of the signal present at the input (1, 2, 3) via the input terminal (E1, E2, E3), the detection means (PE) furthermore has a level output (P1, P2, P3) at which the detected logic level is output, wherein to avoid incorrectly detected logic levels between the input terminal (E1, E2, E3) and the ground connection (M) before the input (1, 2, 3) a first diode (D1, D2, D3) is connected in series with a first suppressor diode (D4) and also a first counter diode (D11, D22, D33) is connected in series with a second suppressor diode (D3), as a result of which a first protective path (S1) for a positive interference coupling-in and a second protective path (S2) for a negative interference coupling-in are realised, additionally a preresistor (R11, R12) for current limitation is arranged between the input terminal (E1, E2, E3) and the diodes.

The present application relates to the field of semiconductor device technology, and in particular to a silicon carbide MOSFET device with integrated Schottky junction and a manufacturing method, wherein the device comprises: an N-type silicon wafer; a groove located on the N-type silicon wafer, wherein a P+ injection region is provided on one side of the bottom of the groove, and an oxide layer and a deposited polysilicon layer are grown on the surface and sidewall of the groove; a split gate structure located above the oxide layer and the deposited polysilicon layer, wherein the split gate structure comprises an Active Gate and a Dummy Gate, and the two sides of the split gate structure comprise a P-Well region and an N-Source region; and a Contact region located above the P-Well region and the N-Source region. Thus, the problems in the related art that the electric field at the bottom of the groove of the trench-type power SiC MOSFET device is large, and it is easy to be broken down or injected into the interface state, or that the parasitic reverse diode is a bipolar device, and when working in reverse, there is a large diode reverse recovery current, resulting in large reverse losses, etc.

A semiconductor device includes: a substrate and backward and forward diodes. Each backward diodes includes: a first channel layer; a first barrier layer; a first gate electrode; a first gate semiconductor layer; and a first source electrode and a first drain electrode that are disposed at opposite sides of the first gate electrode. The forward diode includes: a second channel layer; a second barrier layer; a second gate electrode; a second gate semiconductor layer; and a second source electrode and a second drain electrode that are disposed at opposite sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and a first drain electrode of the backward diodes is connected with a second source electrode of the forward diode. The band gaps of the first (second) channel layer and the first (second) barrier layers are different.

The invention discloses a semiconductor device and an electronic system including the same. The semiconductor system comprises a substrate, a backward diode and a forward diode. Each backward diode includes: a first channel layer; a first barrier layer; a first gate electrode; a first gate semiconductor layer; and a first source electrode and a first drain electrode disposed on opposite sides of the first gate electrode. The forward diode includes: a second channel layer; a second barrier layer; a second gate electrode; a second gate semiconductor layer; and a second source electrode and a second drain electrode disposed on opposite sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and the first drain electrode of the backward diode is connected to the second source electrode of the forward diode. The band gaps of the first (second) channel layer and the first (second) barrier layer are different.

The utility model provides a detector loop detection circuit and detector loop detection equipment. The detector loop detection circuit comprises a first voltage source, a second voltage source, at least one detector loop and a controller. The detector loop comprises at least one detector, a terminal resistor, a backward diode, a first detection branch and a second detection branch. The terminal resistor is coupled to the backward diode, and the terminal resistor and the backward diode are connected in parallel to the detector; the first detection branch is coupled to a first voltage source and one end of the detector; the second detection branch is coupled to the second voltage source and the other end of the detector; the controller is coupled to the first detection branch and the second detection branch to detect the working state of the detector loop. The detector loop detection circuit can detect the working state of the detector loop based on the first detection branch and / or the second detection branch, supports non-linear detector loop detection and non-linear fire-fighting detector loop detection, and is wide in application range, simple to operate and convenient to use.

The application belongs to the field of communication and provides a high-reliability MBUS host terminal device and a working method thereof, which comprises a host terminal receiving circuit and a host terminal overload protection circuit; the host terminal receiving circuit is connected by a first receiving branch and a second receiving branch; the input end of the first receiving branch is connected to an MBUS-signal end; the input end of the first receiving branch is also connected to a first operational amplifier; the output end of the first operational amplifier is connected to a second operational amplifier of the second receiving branch and an operational comparator; the second receiving branch comprises the second operational amplifier and the operational comparator connected in sequence; the output end of the second operational amplifier is connected to the operational comparator through two parallel branches; the first parallel branch is a reverse diode connected in series with a resistor; and the second parallel branch is a forward diode connected in series with a resistor. By connecting a pair of diodes in parallel, the voltage difference between the voltage after the capacitor integration and the original voltage value is effectively limited.