5 results about "Backward diode" patented technology

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

The invention provides a reverse conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, the reverse conducting insulated gate bipolar transistor is characterized in that a first trench is a gate trench, a second trench is an emitter trench, and a third trench is an invalid gate trench; the first groove, the second groove and the third groove are sequentially arranged at intervals in the transverse direction parallel to the surface of the cell, the first groove and the second groove are connected through a fourth groove, and the fourth groove is a grid electrode groove; in the longitudinal direction, the second grooves are located between every two adjacent fourth grooves. The beneficial effects of the invention are that the gate trench is connected with the invalid gate trench through the transverse gate trench, thereby reducing the forward conduction voltage drop and conduction loss of the device; current channels are increased, so that current distribution is more uniform, heat loss is reduced, and reliability and power density of the device are improved; the polysilicon gates and the metal gates are repeatedly arranged at intervals in the transverse direction and the longitudinal direction of the emitter trench to form the diodes and the Schottky diodes which are regularly arranged, so that the current distribution of the backward diodes is more uniform.

The present invention relates to infinite auto power generation device No: 1 to 19 that can be used together in products to generate, store, amplify mechanic, DC, AC power without using external power, made with:(rechargeable) batteries or capacitors or electrical transformers with same voltage but different powers connected in parallel and / or in series,or insulated capacitor with 2 different electrodes separated by an insulator, (with holes)or magnet(s) & diodes with coils / transformers kept in a HV insulator,or transformers and electric motors with insulated magnetic alloy wire coils,or at least 1 circular magnet on an axis with magnet(s) with rod, U or other form,or at least 2 torsaded insulated wires separated by a HV insulator, kept insulated.or by using diodes, resistors, capacitors transistors between 2 batteriesor by using 2 inverted diodes on parallel kept on HV insulator

A power semiconductor module may include one or more of the following: a main substrate having at least one metallization layer; a semiconductor switch chip with a positive terminal on a positive terminal side and a negative terminal on a negative terminal side opposite to the positive terminal side adapted for switching a current from the positive terminal to the negative terminal; a diode chip with an anode on an anode side and a cathode on a cathode side opposite to the anode side adapted for blocking a current from the cathode to the anode, where the diode chip is bonded to the second area; a heat sink connected to the main substrate opposite to the semiconductor switch chip and the diode chip; and an auxiliary substrate having at least one metallization layer.

According to an embodiment, a circuit for transistor gate stress testing is proposed. The circuit includes a first p-channel MOSFET with its drain linked to the transistor's gate; a second p-channel MOSFET coupling its source to the first p-channel MOSFET's source at a node and its drain to a supply voltage; a first n-channel MOSFET with its source to ground and drain to the transistor's gate; a second n-channel MOSFET with its source to ground and drain to the second p-channel MOSFET's gate; a third p-channel MOSFET with its source and drain bridging the node to the second n-channel MOSFET's drain; a fourth p-channel MOSFET in trans-diode setup, its gate to the third p-channel MOSFET's gate and source to the supply rail; plus a current source placed between the fourth p-channel MOSFET's drain and ground.