20 results about "Backward diode" patented technology

The application discloses a GaN HEMT device integrated with a reverse diode and a preparation method thereof. The GaN HEMT device comprises a two-dimensional electron gas structure, a source electrode, a drain electrode, a P-GaN gate electrode, a passivation layer, a source field plate structure, a Schottky contact metal, an ohmic contact metal and a P-GaN layer. The Schottky contact metal and the surrounding structure thereof constitute a Schottky diode, and the P-GaN layer and the surrounding structure thereof constitute a P-i-N diode. The application integrates the parallel Schottky diode and P-i-N diode, and provides a new path for the reverse current of the GaN HEMT device. In the reverse conduction, the low reverse conduction voltage of the Schottky diode can be utilized, and the strong overcurrent capacity of the P-i-N diode can be exerted. The source field plate structure is utilized to build a reverse conduction loop, and the reverse conduction part is formed with the aid of the potential barrier layer. The reverse conduction part and the forward conduction part share the drain region, and the area is reduced.

The invention relates to the technical field of dual power supplies, and discloses a dual power supply system for a high-voltage box built-in battery, and the system comprises an AC / DC main power module which is used for converting a single-phase AC 220V input into a DC 24V DC output; the DC battery pack is formed by connecting lithium iron phosphate cells in series; the input end of the DC / DC standby power module is connected with the DC battery pack, and the output end of the DC / DC standby power module provides 23V DC voltage; the intelligent switching unit comprises a reverse diode group connected in parallel between the main circuit and the standby circuit, and is used for blocking the standby loop when the main power supply is normal and conducting the standby power supply when the interruption of the main power supply is less than or equal to 3ms; a battery management communication interface; and a grading protection mechanism. According to the invention, the battery, the standby power supply and the switching logic are all integrated in the high-voltage box to form an integrated dual-power system, external links such as an alternating-current cable, an air switch and an adapter between the UPS and the high-voltage box are thoroughly cancelled, and the reliability of the system is upgraded from a series structure to a parallel redundant structure.

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

The utility model discloses a high-efficiency linear direct-current power supply with a transformer secondary tap capable of zero-crossing automatic switching, which is characterized in that a 220V power supply is subjected to voltage reduction through a transformer T, terminals 4, 3, 2 and 1 of the transformer respectively output different alternating-current voltages, the terminals 4 and 1 are connected with the input end of a bridge rectifier B, the terminals 3 and 2 are respectively connected with a working ground through backward diodes D6 and D5, and the working ground is connected with the working ground through the reverse diodes D6 and D5. A transistor T1, resistors R1, R2, R3 and R4, a potentiometer P1 and a voltage stabilizing diode D7 form a grid trigger circuit of a one-way silicon controlled rectifier Th1, when small and medium loads are loaded, reverse breakdown of the D7 is just achieved by adjusting the voltage of the P1 and the sliding end, T1 is conducted, the silicon controlled rectifier Th1 is cut off, and a terminal 4-2 or a terminal 1-3 of a transformer T supplies power to the loads; when the load is heavy, the Uo drops, the result is that the sliding end voltage of the P1 cannot enable the D7 to be reversely broken down, the D7 is cut off, the T1 is cut off, the Th1 is conducted, and the transformer terminal 4-1 or 1-4 provides a power supply for the load.

The invention relates to a monitoring assembly for an electrical component, a semiconductor switch assembly having a monitoring function, and an energy system. An analysis unit (50) of the semiconductor switch assembly is configured to determine on the basis of a first voltage divider (20), a second voltage divider (25), and a measuring device (40), a short circuit and / or a deviation from desired switched states in a first semiconductor switch (10) having a first inverse diode and a second semiconductor switch (15) having a second inverse diode, the semiconductor switches (10, 15) being connected in series between an input terminal (30) and an output terminal (32) of the semiconductor switch assembly, in such a way that the inverse diodes thereof are arranged anti-serially. In addition, the semiconductor switch assembly is configured to determine, on the basis of a first switch (S1) and a second switch (S2), a corrective factor for establishing a balance between the first voltage divider (20) and the second voltage divider (25).

The invention provides a reverse conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, the reverse conducting insulated gate bipolar transistor is characterized in that a first trench is a gate trench, a second trench is an emitter trench, and a third trench is an invalid gate trench; the first groove, the second groove and the third groove are sequentially arranged at intervals in the transverse direction parallel to the surface of the cell, the first groove and the second groove are connected through a fourth groove, and the fourth groove is a grid electrode groove; in the longitudinal direction, the second grooves are located between every two adjacent fourth grooves. The beneficial effects of the invention are that the gate trench is connected with the invalid gate trench through the transverse gate trench, thereby reducing the forward conduction voltage drop and conduction loss of the device; current channels are increased, so that current distribution is more uniform, heat loss is reduced, and reliability and power density of the device are improved; the polysilicon gates and the metal gates are repeatedly arranged at intervals in the transverse direction and the longitudinal direction of the emitter trench to form the diodes and the Schottky diodes which are regularly arranged, so that the current distribution of the backward diodes is more uniform.

The present invention relates to infinite auto power generation device No: 1 to 19 that can be used together in products to generate, store, amplify mechanic, DC, AC power without using external power, made with:(rechargeable) batteries or capacitors or electrical transformers with same voltage but different powers connected in parallel and / or in series,or insulated capacitor with 2 different electrodes separated by an insulator, (with holes)or magnet(s) & diodes with coils / transformers kept in a HV insulator,or transformers and electric motors with insulated magnetic alloy wire coils,or at least 1 circular magnet on an axis with magnet(s) with rod, U or other form,or at least 2 torsaded insulated wires separated by a HV insulator, kept insulated.or by using diodes, resistors, capacitors transistors between 2 batteriesor by using 2 inverted diodes on parallel kept on HV insulator

To provide a semiconductor device functioning as a Zenerdiode, and an electronic system including the same.SOLUTION: A semiconductor device of the present invention includes a substrate, a reverse diode, and a forward diode. The reverse diode includes a first channel layer, a first barrier layer, a first gate electrode, and a first source electrode and a first drain electrode located on both sides of the first gate electrode. The forward diode includes a second channel layer, a second barrier layer, a second gate electrode, and a second source electrode and a second drain electrode located on both sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and the first drain electrode of the reverse diode is connected to the second source electrode of the forward diode. The first channel layer has a different energy band gap than the first barrier layer.SELECTED DRAWING: Figure 4

An integrated circuit (IC) device includes a substrate, first and second semiconductor devices correspondingly in different first and second doped regions in the substrate. A gate of the first semiconductor device is electrically coupled to a source / drain of the second semiconductor device. The IC device further includes a first reverse diode electrically coupled between the substrate and a doped well. The doped well is in the first doped region and a source / drain of the first semiconductor device is in the doped well. Alternatively, the doped well is in the second doped region, and the source / drain of the second semiconductor device is in the doped well.

A power semiconductor module may include one or more of the following: a main substrate having at least one metallization layer; a semiconductor switch chip with a positive terminal on a positive terminal side and a negative terminal on a negative terminal side opposite to the positive terminal side adapted for switching a current from the positive terminal to the negative terminal; a diode chip with an anode on an anode side and a cathode on a cathode side opposite to the anode side adapted for blocking a current from the cathode to the anode, where the diode chip is bonded to the second area; a heat sink connected to the main substrate opposite to the semiconductor switch chip and the diode chip; and an auxiliary substrate having at least one metallization layer.

The utility model provides a rotating speed sampling circuit with state detection, the rotating speed sampling circuit is connected with a motor rotating speed output port, and the rotating speed sampling circuit comprises a rotating speed signal processing circuit which comprises a transient suppression diode, an amplitude limiting diode and a signal conversion circuit, one end of the signal conversion circuit is connected with a motor rotating speed output port through a current-limiting resistor and a first voltage division circuit; the end, connected with the motor rotating speed output port, of the current limiting resistor is further grounded through the transient suppression diode, the end, connected with the signal conversion circuit, of the current limiting resistor is further grounded through the amplitude limiting diode, and the other end of the signal conversion circuit is connected with a controller. And the rotating speed signal state acquisition circuit comprises a backward diode and a second voltage division circuit, the cathode of the backward diode is connected with the motor rotating speed output port, and the anode of the backward diode is connected with the controller through the second voltage division circuit.

The invention relates to a digital input assembly for an automation device, comprising: - an input terminal (E1, E2, E3) functioning as a digital input, - a ground connection (M), - a detection means (PE) having an input (1, 2, 3) for an input signal (I1, I2, I3) present at the input (1, 2, 3) and designed to detect a logic level of the signal present at the input (1, 2, 3) via the input terminal (E1, E2, E3), the detection means (PE) furthermore has a level output (P1, P2, P3) at which the detected logic level is output, wherein to avoid incorrectly detected logic levels between the input terminal (E1, E2, E3) and the ground connection (M) before the input (1, 2, 3) a first diode (D1, D2, D3) is connected in series with a first suppressor diode (D4) and also a first counter diode (D11, D22, D33) is connected in series with a second suppressor diode (D3), as a result of which a first protective path (S1) for a positive interference coupling-in and a second protective path (S2) for a negative interference coupling-in are realised, additionally a preresistor (R11, R12) for current limitation is arranged between the input terminal (E1, E2, E3) and the diodes.

A semiconductor device includes: a substrate and backward and forward diodes. Each backward diodes includes: a first channel layer; a first barrier layer; a first gate electrode; a first gate semiconductor layer; and a first source electrode and a first drain electrode that are disposed at opposite sides of the first gate electrode. The forward diode includes: a second channel layer; a second barrier layer; a second gate electrode; a second gate semiconductor layer; and a second source electrode and a second drain electrode that are disposed at opposite sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and a first drain electrode of the backward diodes is connected with a second source electrode of the forward diode. The band gaps of the first (second) channel layer and the first (second) barrier layers are different.

The invention discloses a semiconductor device and an electronic system including the same. The semiconductor system comprises a substrate, a backward diode and a forward diode. Each backward diode includes: a first channel layer; a first barrier layer; a first gate electrode; a first gate semiconductor layer; and a first source electrode and a first drain electrode disposed on opposite sides of the first gate electrode. The forward diode includes: a second channel layer; a second barrier layer; a second gate electrode; a second gate semiconductor layer; and a second source electrode and a second drain electrode disposed on opposite sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and the first drain electrode of the backward diode is connected to the second source electrode of the forward diode. The band gaps of the first (second) channel layer and the first (second) barrier layer are different.

The application belongs to the field of communication and provides a high-reliability MBUS host terminal device and a working method thereof, which comprises a host terminal receiving circuit and a host terminal overload protection circuit; the host terminal receiving circuit is connected by a first receiving branch and a second receiving branch; the input end of the first receiving branch is connected to an MBUS-signal end; the input end of the first receiving branch is also connected to a first operational amplifier; the output end of the first operational amplifier is connected to a second operational amplifier of the second receiving branch and an operational comparator; the second receiving branch comprises the second operational amplifier and the operational comparator connected in sequence; the output end of the second operational amplifier is connected to the operational comparator through two parallel branches; the first parallel branch is a reverse diode connected in series with a resistor; and the second parallel branch is a forward diode connected in series with a resistor. By connecting a pair of diodes in parallel, the voltage difference between the voltage after the capacitor integration and the original voltage value is effectively limited.

The invention discloses an MOS (Metal Oxide Semiconductor) control thyristor integrated with a fly-wheel diode and a preparation method of the MOS control thyristor, and relates to the field of semiconductors. The thyristor comprises an N-type substrate, an annular P-type terminal ring and an N-type JFET isolation well are arranged on the front face of the N-type substrate, a P-type PS well region and a P-type well region (including the N-type well region and the N-type NP well region) are arranged in the isolation well, and a laminated gate of a gate oxide layer and a polycrystalline silicon layer and cathode metal are further arranged; a back P well region, a back N well region and anode metal are sequentially arranged on the back side from inside to outside, and a passivation layer with a PAD is arranged on the cathode metal. The preparation method comprises the steps of substrate pretreatment, front well region and gate preparation, substrate thinning, back well region preparation, and front and back metal and passivation layer / PAD preparation. By integrating the freewheeling diode structure, the problem that a conventional MCT needs an external backward diode is solved, the circuit is simplified, the bidirectional current requirement of the RLC oscillation circuit is adapted, and the practicability and the integration degree of the device are improved.

The invention provides a GaN power device integrated with a reverse recovery diode. The GaN power device comprises an epitaxial structure, a first drain electrode, an ohmic grid electrode, a first source electrode, a second source electrode, a Schottky grid electrode and a second drain electrode, the ohmic grid electrode and the first source electrode are connected in parallel to form an anode of the reverse recovery diode, the first drain electrode forms a cathode of the reverse recovery diode, the second source electrode, the Schottky grid electrode and the second drain electrode form a power tube, the ohmic grid electrode comprises an ohmic P-GaN part, the Schottky grid electrode comprises a Schottky P-GaN part, and the Schottky P-GaN part comprises a Schottky P-GaN part. And the thickness of the ohmic P-GaN part is smaller than or equal to the thickness of the Schottky P-GaN part. Through the L-FER of the ohmic gate, the turn-on voltage of the reverse diode can be greatly reduced, and through the design optimization of the process, the performance close to that of a Si diode can be achieved, so that the loss of reverse conduction can be greatly reduced. Meanwhile, according to the design, a field plate structure can be integrated on the L-FER, so that the voltage-withstanding performance consistent with that of a power HEMT is achieved.

According to an embodiment, a circuit for transistor gate stress testing is proposed. The circuit includes a first p-channel MOSFET with its drain linked to the transistor's gate; a second p-channel MOSFET coupling its source to the first p-channel MOSFET's source at a node and its drain to a supply voltage; a first n-channel MOSFET with its source to ground and drain to the transistor's gate; a second n-channel MOSFET with its source to ground and drain to the second p-channel MOSFET's gate; a third p-channel MOSFET with its source and drain bridging the node to the second n-channel MOSFET's drain; a fourth p-channel MOSFET in trans-diode setup, its gate to the third p-channel MOSFET's gate and source to the supply rail; plus a current source placed between the fourth p-channel MOSFET's drain and ground.

The embodiment of the invention discloses an operational amplifier circuit. The operational amplifier circuit comprises an operational amplifier, a first parallel reverse diode module, a second parallel reverse diode module, a first capacitor module, a second capacitor module, a first resistor module and a second resistor module; the positive input end of the operational amplifier inputs first voltage, the positive input end of the operational amplifier is electrically connected with the first end of the first parallel backward diode module, the second end of the first parallel backward diode module is electrically connected with the first end of the first resistor module, and bias voltage is connected to the second end of the first resistor module. The third end of the first resistor module is electrically connected with the negative output end of the operational amplifier, and the positive input end of the operational amplifier is electrically connected with the first end of the first capacitor module; a common-mode voltage is input into the common-mode input end of the operational amplifier. According to the operational amplifier circuit provided by the embodiment of the invention, input and output common-mode voltages can be separated, and the common-mode rejection ratio can be improved.

The present invention relates to infinite auto power generation device No: 1 to 19 that can be used together in products to generate, store, amplify mechanic, DC, AC power without using external power, made with: - (rechargeable) batteries or capacitors or electrical transformers with same voltage but different powers connected in paralelle and / or in serie, - or insulated capacitor with 2 different electrodes separated by an insultor, (with holes), - or magnet(s) & diodes with coils / transformers kept in a HV insulator, - or transformers and electric motors with insulated magnetic alloy wire coils, - or at least 1 circular magnet on an axis with magnet(s) with rod, U or other form, - or at least 2 torsaded insulated wires separated by a HV insulator, kept insulated, - or by using diodes, resistors, capacitors transistors between 2 batteries, - or by using 2 inverted diodes on parallel kept on HV insulator.