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System for preventing reverse recovered charges in DUT

A reverse recovery charge, diode technology, applied in electrical components, pulse processing, pulse shaping, etc., can solve problems such as high price, diode conduction loss and breakdown voltage switching speed imbalance, to improve efficiency and reduce switching. loss and conduction loss, the effect of shortening the reverse recovery time

Active Publication Date: 2014-07-16
HAIMEN THE YELLOW SEA ENTREPRENEURSHIP PARK SERVICE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, in order to improve the reverse recovery characteristics of diodes, device manufacturers use carrier lifetime control technology to introduce recombination centers in the process stage, but this leads to the gap between the on-state loss of the diode and the breakdown voltage and switching speed. out of balance
Silicon carbide is also an option for device fabrication, but it is expensive

Method used

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  • System for preventing reverse recovered charges in DUT
  • System for preventing reverse recovered charges in DUT
  • System for preventing reverse recovered charges in DUT

Examples

Experimental program
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Effect test

Embodiment

[0033] The example circuit is as Figure 5 shown. Compared figure 2 The circuit can be seen in the Figure 5 A current injection circuit (the part inside the dashed box) is added in the Figure 7 As shown, this is necessary to achieve a reduction in the DUT reverse recovery charge Qrr. When the DUT is suddenly reverse-biased, the Qrr in the DUT drift region can prevent the diode from immediately reverse-blocking, while experiencing a period such as figure 1 reverse recovery process. At this time, the current injection circuit injects an additional current with an external circuit proportional to the maximum negative current of the DUT—nS-level pulse signal generator and the pulse edge acceleration circuit immediately after it. This additional current is beneficial for DUT to reduce Until Qrr is eliminated, the device is prevented from passing excessive reverse current, so that the DUT's Qrr and reverse recovery time t rr rapid decline.

[0034] Figure 6 is the re...

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Abstract

The invention discloses a system for preventing reverse recovered charges in a DUT. The system is a current injection circuit connected to the two ends of the DUT in a forward bias mode. The injected current circuit comprises a pulse nS-level pulse signal generator formed by an SRD and a pulse edge acceleration circuit formed by a BG2 and a BG1, wherein the pulse edge acceleration circuit is tightly connected with the back of the pulse nS-level pulse signal generator and used for shortening the rising edge time and the falling edge time of pulses. The system has the advantages that the reverse recovered features of the DUT can be improved, the reverse recovered charges can be reduced, and the reverse recovered time can be shortened; meanwhile, switching losses and conduction losses of the DUT can be reduced, electromagnetic interference and surges can be restrained, and efficiency is improved.

Description

technical field [0001] The invention relates to the technical fields of semiconductor and electronics, in particular to a circuit system for resisting the reverse recovery charge of a diode. Background technique [0002] Power semiconductor devices such as power diodes, step diodes, IGBTs, thyristors, and fast recovery diodes are widely used in the field of power electronics. Research and suppression of reverse recovery of excitation diode [J], Power Technology, 2010 No. 1: 57-59.], that is, the charge stored in the device will disappear completely after a period of time, which will be in the circuit system cause electromagnetic interference. [0003] These power semiconductor diodes require less reverse recovery charge and short reverse recovery time to reduce electromagnetic interference and suppress surges. At the same time, when the power diode changes from forward conduction to reverse biased state, the charge stored in the drift region of the tube will prevent the de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K5/06H03K5/12
Inventor 韦文生沈琦夏鹏
Owner HAIMEN THE YELLOW SEA ENTREPRENEURSHIP PARK SERVICE CO LTD
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