A Superjunction MOSFET with Improved Reverse Recovery Characteristics

A reverse recovery and characteristic technology, applied in the direction of diodes, semiconductor devices, electrical components, etc., can solve problems such as adverse effects of application systems and increased losses
CN111969062BActive Publication Date: 2021-06-04UNIV OF ELECTRONICS SCI & TECH OF CHINA
6 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2021-06-04

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to power semiconductor technology, and relates to a super junction MOSFET with improved reverse recovery characteristics. Compared with the traditional MOSFET, the present invention introduces an insulating medium between the P-type drift region and the N-type drift region, and at the same time separates the P-type well region into the first P-type well region located on the N-type drift region and the first P-type well region located on the P-type drift region. Two parts on the second P-type well region. The first P-type well region forms a Schottky contact with the source metal. A planar N-type MOSFET is introduced in the second P-type well region, and the N+ source region of the device is connected to the drain of the planar N-type MOSFET through a floating metal. The source of the N-type MOSFET is used as the source of the device of the present invention, and its gate is connected with the gate of the device of the present invention. When the device conducts in reverse, since the Schottky diode is in a reverse bias state, the body diode on the side of the N-type drift region connected to it does not conduct, and only the body diode on the side of the P-type drift region conducts, so when the reverse conduction The charge stored in the drift region is reduced. The invention improves the reverse recovery characteristic of the device.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of power semiconductors, in particular to a super junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET for short) with improved reverse recovery characteristics. Background technique

[0002] The trade-off relationship between breakdown voltage and specific on-resistance of super junction MOSFET is much better than that of ordinary MOSFET, so it is in a dominant position in the field of 500V-650V power switch. However, the reverse recovery charge of the body diode of the super-junction MOSFET is much larger than that of the ordinary MOSFET, which not only increases its own loss, but also brings electromagnetic interference noise, which adversely affects the application system. Contents of the invention

[0003] The object of the present invention is to provide a super junction MOSFET with improved reverse recovery characteristics to solve the above problems.

[0004] The technical so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More