38results about How to "Reduce emission efficiency" patented technology

A tandem light-emitting element employing an inverted-structure is provided. The light-emitting element includes a cathode, a first EL layer over the cathode, a second EL layer over the first EL layer, an anode over the second EL layer, and an intermediate layer. The intermediate layer is between the first EL layer and the second EL layer. The intermediate layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a hole-transport material and an electron acceptor. The third layer includes an alkali metal or an alkaline earth metal. The second layer includes an electron-transport material.

To provide a green phosphor with high conversion efficiency of blue of near-ultraviolet light and excellent color purity, a multinary oxynitride phosphor represented by the general formula [I] is proposed.M1xBayM2zLuOvNw  [I]In the formula [I], M1 represents Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, M2 represents Sr, Ca, Mg and Zn, L represents metal elements belonging to the fourth group or the fourteenth group of the periodic table, and x, y, z, u, v and w are the numeric values in the following ranges:0.00001≦x≦30≦y≦2.999992.6≦x+y+z≦30<u≦116<v≦250<w≦17.

A projection display apparatus 100 including a plurality of solid state light sources 11 includes: a sensor 70 detecting an amount of light emitted from the plurality of solid state light sources 11; a degradation rate calculating unit 250 acquiring, from the amount of light detected by the sensor 70, an amount of light emitted from a measurement target light source which is any one of the plurality of solid state light sources: and a light source controlling unit 240 controlling, for each of the plurality of state light sources 11, emission periods in which the plurality of solid state light sources 11 emit light so that the degradation rate calculating unit 250 acquires the amount of light emitted from the measurement target light

The invention relates to a vacuum aluminizing method of the surface of a neodymium-iron-boron permanent magnet. The method sequentially comprises the following steps of: (1) polishing and cleaning the surface of the neodymium-iron-boron permanent magnet by adopting a wet method; (2) putting the neodymium-iron-boron permanent magnet on a rotating workpiece fame in a film plating chamber to ensure that the temperature of the neodymium-iron-boron permanent magnet is kept between 250 DEG C and 300 DEG C; (3) starting a vacuum pump on the film plating chamber and adjusting the vacuum degree of the film plating chamber to be 1-9*10<-3>Pa; (4) meanwhile, starting multi-arc cathode evaporators at both sides of the film plating chamber, a plane magnetic sputtering target and the rotating workpiece frame to carry out magnetic control multi-arc sputtering for 2-7 hours; (5) maintaining the film plating chamber to be cooled for 30-60 minutes under vacuum, aerating, opening the chamber, taking out the aluminized neodymium-iron-boron permanent magnet and carrying out passivation with a non-chrome passivation solution. High energy ions generated by magnetron sputtering strike low-energy ions generated by the multi-arc method so as to promote the low-energy ions to generate more ionization, wherein the speeds and the trends of the high-energy ions and the low-energy ions are uniform, thus the efficiency is improved.

A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.

Various embodiments provide SCR ESD protection devices and methods for forming the same. An exemplary device includes a semiconductor substrate having a P-type well region, an N-type well region adjacent to the P-type well region, a first P-type doped region and a first N-type doped region in the P-type well region, and a second N-type doped region and a second P-type doped region in the N-type well region. A first center-doped region and a second center-doped region doped with impurity ions of a same type are located between the first N-type doped region and the second P-type doped region and extend across the P-type well region and the N-type well region. The first center-doped region is located within the second center-doped region, has a doping concentration higher than a doping concentration in the second center-doped region, and has a depth smaller than a depth of the second center-doped region.

An organic electroluminescent element includes an organic layer including a compound having an electron donor moiety and an electron acceptor moiety in a single molecule. The compound satisfies the following expression: (ΔEH+ΔEL)≧2.0 eV. ΔEH represents a difference in energy level between a highest energy occupied molecular orbital spreading over the electron donor moiety and a highest energy occupied molecular orbital spreading over the electron acceptor moiety, and ΔEL represents a difference in energy level between a lowest energy unoccupied molecular orbital spreading over the electron donor moiety and a lowest energy unoccupied molecular orbital spreading over the electron acceptor moiety, determined by molecular orbital calculation. A highest energy occupied molecular orbital of the compound has an energy level of −5.2 eV or more. A lowest energy unoccupied molecular orbital of the compound has an energy level of −1.2 eV or less.

The invention relates to a field stop type IGBT device with a terminal structure and a manufacturing method of the field stop type IGBT device. An IGBT device structure is arranged in a cell region of the first primary side of a semiconductor substrate, and a terminal protection structure is arranged in a terminal region of the first primary side. Collector metal making ohmic contact with a second conduction type collector region is arranged on the second primary side of the semiconductor substrate, and the second conduction type collector region is isolated from a first conduction type drifting region through a first conduction type buffer region. The second conduction type collector region comprises a second conduction type first collector region located in the cell region and a second conduction type second collector region located in the terminal region. The first conduction type buffer region comprises a first conduction type first buffer region located in the cell region and a first conduction type second buffer region located in the terminal region. According to the field stop type IGBT device, switching losses of an existing field stop type IGBT device can be effectively reduced, and use reliability of the IGBT device is improved.

The invention relates to a groove-type anode fast recovery diode with bipolar Schottky control and a manufacturing method thereof. The diode includes a cathode metal, Above the cathode metal there isan N-type intrinsic region, Above the N-type intrinsic region there is an anode metal, the cathode metal is provided with a lightly doped N-type region and a heavily doped N-type region spaced apart from each other, the bottom of the lightly doped N-type region is in Schottky contact with the cathode metal, A heavily doped P-type region and a lightly doped P-type region are arranged between the N-type intrinsic region and the anode metal, and the upper surface of the heavily doped P-type region is lower than the upper surface of the lightly doped P-type region, so that a groove-type anode region is formed, and the lightly doped P-type region is in Schottky contact with the anode metal. The manufacturing method of the groove-type anode fast recovery diode with bipolar Schottky control is characterized in that Schottky contacts of an anode surface and a sidewall can be simultaneously formed by one-step etching.

A light emitting body has a base material containing a graphene structure and a covering material for covering a surface of the base material. The graphene structure preferably includes a sheet portion made of a monolayer or multilayer graphene nanosheet and having, at an edge portion thereof, an armchair edge-face portion; and a terminal six-membered ring bound to the armchair edge-face portion while sharing only one side therewith. Further, the graphene structure preferably includes a nitrogen-containing functional group bound to any one or more carbon atoms selected from (a) carbon atoms constituting the terminal six-membered ring but not bound to the armchair edge-face portion, and (b) carbon atoms constituting the sheet portion (including carbon atom on the side shared with the terminal six-membered ring).

Provided are a process method for bond-packaging an LED using a refined photoconverter, and a refining equipment system. The process method includes the following continuous process flow: roll-shaping of a special-shaped microporous carrier sheet, refining of a semi-cured photoconversion sheet, preparation of a flip chip LED array sheet, forming of LED package elements by roll-bonding, curing of the LED package elements, and cutting of the LED package elements. The present invention has a significant advantage of a refined photoconverter, and especially can meet a requirement of a continuous process flow of bond-packaging an LED using an organic silicone resin photoconverter, so as to enhance the production efficiency and yield of LED packages in industrialized batch production.

A silicon-controlled rectifier lateral double diffused metal oxide semiconductor with high maintaining voltage comprises an N-type substrate. Buried oxide is arranged on the N-type substrate, an N-type epitaxial layer is arranged on the buried oxide, an N-type buffer trap and a P-type body region are arranged in the N-type epitaxial layer, a P-type anode region and an N-type contact region are arranged in the N-type buffer trap, an N-type cathode region and a P-type body contact region are arranged in the P-type body region, a gate oxide layer and a field oxide layer are arranged on the surface of the N-type epitaxial layer, a shallow P-type trap region is arranged on the surface of the N-type cathode region and the surface of the P-type body contact region, and a polysilicon gate is arranged on the surface of the gate oxide layer. The silicon-controlled rectifier lateral double diffused metal oxide semiconductor is characterized in that a deep N-type trap region is arranged under the P-type anode region and the N-type body contact region, a deep P-type trap region is arranged under the shallow P-type trap region, and a carrier double-injection effect can be effectively suppressed by the shallow P-type trap region and the deep P-type trap region, so that the quantity of neutralized free carriers in a drift region is reduced. Accordingly, the maintaining voltage of a device is improved, and risks of breech lock in an electrostatic release process are reduced.

An organic EL display device includes an organic layer having plural layers including a light emitting layer, and a color filter that passes a light of a predetermined wavelength region. The organic layer includes a first organic layer that is arranged in a first area having plural independent areas in a display area, and includes the light emitting layer that emits a light of a first wavelength region, and a second organic layer that is arranged in a second area having plural independent areas which is an area different from the first area in the display area, and includes the light emitting layer that emits a light of a second wavelength region which is different from the first wavelength region. The color filter has a first color filter and a second color filter that pass respective lights of different wavelength regions in the light emitted from the light emitting layer of the first organic layer.

The invention discloses a filament used for a microcurrent electronic gun. The filament is made of tungsten, the diameter of the middle of the filament gradually lessens, the diameter of two ends of the filament is 0.15mm-0.2mm, and the diameter of the thinnest position of the middle of the filament is 0.12mm-0.16mm. The filament used for the microcurrent electronic gun solves the problem that beam current size of the microcurrent electronic gun cannot be accurately controlled in the prior art, and enables electron emission quantity to be reduced of two order of magnitudes through decreasing of the superficial area of the filament. Through changing of the shape and structure of the filament, large temperature gradients of the middle portion and edges are formed, and thus an electron emission area is gradually enlarged along with the increase of voltage of a filament end. A tip protuberance shape can form the earliest punctiform trace emission which is quite easy to educe out by an accelerating field, and thus stable and nearly linear control from a few microamps to hundreds of microamps is achieved.

The invention relates to a vacuum aluminizing method of the surface of a neodymium-iron-boron permanent magnet. The method sequentially comprises the following steps of: (1) polishing and cleaning the surface of the neodymium-iron-boron permanent magnet by adopting a wet method; (2) putting the neodymium-iron-boron permanent magnet on a rotating workpiece fame in a film plating chamber to ensure that the temperature of the neodymium-iron-boron permanent magnet is kept between 250 DEG C and 300 DEG C; (3) starting a vacuum pump on the film plating chamber and adjusting the vacuum degree of thefilm plating chamber to be 1-9*10<-3>Pa; (4) meanwhile, starting multi-arc cathode evaporators at both sides of the film plating chamber, a plane magnetic sputtering target and the rotating workpieceframe to carry out magnetic control multi-arc sputtering for 2-7 hours; (5) maintaining the film plating chamber to be cooled for 30-60 minutes under vacuum, aerating, opening the chamber, taking outthe aluminized neodymium-iron-boron permanent magnet and carrying out passivation with a non-chrome passivation solution. High energy ions generated by magnetron sputtering strike low-energy ions generated by the multi-arc method so as to promote the low-energy ions to generate more ionization, wherein the speeds and the trends of the high-energy ions and the low-energy ions are uniform, thus theefficiency is improved.

The invention belongs to the technical field of up-conversion nano-composite materials, and especially relates to a preparation method and an application of an up-conversion material NaYF4:Yb,Er@M. The preparation method includes the following steps: (1) dispersing an up-conversion nano-material NaYF4:Yb,Er in a solution containing metal M ions, performing aging for 1-24 h to make the surface of the up-conversion material NaYF4:Yb,Er fully absorbs the metal M ions, and centrifuging the obtained solution to obtain a precursor; and (2) placing the precursor obtained in step (1) in a reducing agent, reducing the metal M ions into metal M, and separating the NaYF4:Yb,Er@M up-conversion material after the completion of the reduction in order to obtain the up-conversion material NaYF4:Yb,Er@M. Metal particles are attached in situ onto the surface of NaYF4:Yb,Er, and are very uniformly distributed to form the ideal up-conversion composite material, so that the fluorescence performance of theup-conversion material is significantly enhanced.

The invention provides an IGBT device and a manufacturing method thereof. The IGBT device comprises a substrate, an oxygen ion defect layer, a collector region and a hydrogen ion doped region; the substrate comprises a first main surface and a second main surface which are opposite to each other, a front surface structure of the IGBT device is formed on the first main surface, and the IGBT device comprises an active region, a transition region and a terminal region; the oxygen ion defect layer is formed in the second main surface of the transition region and the terminal region; the collector region is formed on the second main surface of the substrate; the hydrogen ion doped region is formed in the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, and oxygen ions of the oxygen ion defect layer serve as adsorbents of the hydrogen ions, so that the doping concentration of the hydrogen ions in the hydrogen ion doped region is increased. When the IGBT device is switched on, the emission efficiency of the transition region and the terminal region is reduced, and when the IGBT device is switched off, the electron and hole recombination speed of the transition region and the terminal region is improved, so that the problem of current concentration in the transition region is effectively relieved, and the reliability of an IGBT chip is improved.

The invention discloses an air pressure ejector device, which comprises a launching barrel, wherein the lunching barrel is a cylindrical barrel of which the bottom is sealed and the top is provided with an opening; a compressed air bottle, a check valve, an air reservoir and a sandbag are arranged in the lunching barrel; the compressed air bottle is positioned on the bottom of the launching barrel; the upper part of the compressed air bottle is connected with the check valve; the upper part of the check valve is connected with the air reservoir; the compressed air bottle conveys high-pressure air into the air reservoir via the check valve; the upper part of the air reservoir is provided with a solenoid valve; the conveying of the air in the air reservoir to the outside is controlled by the solenoid valve. According to the air pressure ejector device, a push shot device is additionally arranged between the sandbag and the launching barrel, direct friction between the sandbag and the lunching barrel is effectively avoided, and the projection distance of the sandbag is further. The launching barrel and the push shot device are tightly combined to avoid the phenomenon that a great quantity of compression air is wasted since more gaps exist between the sandbag and the lunching barrel in the prior art, and cost is effectively lowered. The valve of the air reservoir adopts the solenoid valve which replaces an original hand valve, and high-pressure gas in the air reservoir can be quickly released since the solenoid valve can be more quickly opened than the hand valve so as to greatly improve launching efficiency and the use ratio of the compressed air.

The invention provides a power semiconductor device and a manufacturing method thereof, and solves the problem that a standard GCT chip is easy to fail at a chip mesa terminal in an overvoltage blocking state, and further causes that the device fails and is in an open circuit state. The device comprises a functional region and a voltage breakdown region, the voltage breakdown region is close to the central position of the power semiconductor device, is surrounded by the functional region, and comprises a second conductive type short circuit structure and a convex second conductive type base region which are stacked in sequence, and the second conductive type short circuit structure penetrates through a first conductive type transparent emitting anode and a second conductive type buffer layer of the functional region; the convex second conductive type base region penetrates through a first conductive type first base region, a first conductive type second base region and a second conductive type region, and a protruding part is formed in the extending direction of the second conductive type base region towards the first conductive type base region.

The antenna of the present invention comprises flat-plate ground plane 1, first antenna element 13 with one end 13a connected to feeding point 2 and intermediate portion 13b folded by a plurality of times, which is extended upward from the ground plane 1, and second antenna element 23 with one end 23a connected to the other end 13c of the first antenna element 13, with intermediate portion 23b formed in symmetrical relation to the first antenna element 13, and also, with the other end 23c connected to the ground plane 1. Thus, it is possible to obtain a small size antenna with the antenna element lowered in height.

The invention provides a power semiconductor device and a manufacturing method thereof, which solves the problem that a standard GCT chip is prone to failure at the end of the chip table in an overvoltage blocking state, resulting in an open circuit state when the device fails. It includes a functional area and a voltage breakdown area. The voltage breakdown area is close to the center of the power semiconductor device and is surrounded by the functional area. The type short-circuit structure runs through the first conductive type transparent emitter anode and the second conductive type buffer layer of the functional area; the convex second conductive type base area runs through the first conductive type first base area, the first conductive type second base area and the second conductive type base area. In the two-conductivity-type region, a raised portion is formed in the extending direction from the second-conductivity-type base region to the first-conductivity-type base region.

The invention provides an IGBT device and a manufacturing method thereof. The IGBT device includes: a substrate, the substrate includes opposite first main surfaces and second main surfaces, the first main surface is formed with a front structure of the IGBT device, and the IGBT device includes The active region, the transition region and the terminal region; the oxygen ion defect layer, formed in the second main surface of the transition region and the terminal region; the collector region, formed on the second main surface of the substrate; the hydrogen ion doped region, formed In the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, wherein the oxygen ions in the oxygen ion defect layer serve as adsorbents for hydrogen ions so as to increase the doping of hydrogen ions in the hydrogen ion doped region. impurity concentration. The present invention reduces the emission efficiency of the transition region and the terminal region when the IGBT device is turned on, and at the same time increases the recombination speed of electrons and holes in the transition region and the terminal region when the IGBT device is turned off, thereby effectively alleviating the current concentration problem existing in the transition region , Improve the reliability of the IGBT chip.

The invention provides a lateral SCR device with a high maintaining voltage. The device comprises a P-type substrate, an n-type well region, a p-type well region, an anode first N+ contact region, ananode first P+ contact region,, an N+ low trigger region, a cathode second P+ isolation region, a cathode second N+ contact region tangent to the cathode second P+ isolation region, a cathode first P+isolation region tangent to the cathode second N+ contact region, a cathode first N+ contact region tangent to a cathode first P+ isolation region, a second P+ contact region tangent to a cathode first N+ contact region, and a first cathode compensation resistor of which one end is connected with the cathode second N+ contact region, wherein surfaces of the anode first N+ contact region and the anode first P+ contact region are short-circuited by metal to form a device anode, and surfaces of the cathode first N+ contact region and the cathode second P+ contact region are short-circuited through metal and are connected with the other end of the first cathode compensation resistor to form a device cathode. The device is advantaged in that the maintaining voltage of the SCR device is improved, the latch-up resistance of the device is improved, current distribution of a device cathode region is improved, and robustness of the device is improved.

The invention provides a transverse insulated gate bipolar transistor with high thermal carrier reliability, which comprises a P-type substrate with a buried oxide layer. An N-type epitaxial layer is provided on the buried oxide layer. In the N-type epitaxial layer, an N-type buffer well and a P-type body region are provided. In the N-type buffer well, a P-type positive region is provided. In the P-type body region, an N-type negative region and a P-type body contact region are provided. The surface of the N-type epitaxial layer is provided with a gate oxide layer and a field oxide layer. A polysilicon gate is provided on the surface of the gate oxide layer, and polysilicon is arranged on the right upper surface of the field oxide layer. The P-type positive region consists of block shaped N-type regions arranged in rows; in the N-type buffer region, a floating hollow N-type contact region is provided. The P-type positive region is arranged in the floating hollow N-type contact region, and each of the block shaped N-type regions is surrounded by the floating hollow N-type contact region on three sides. And the other end of the field oxide layer extends toward the P-type positive region and ends at the floating hollow N-type contact region. According to the invention, it is possible to reduce the emission efficiency of a parasitic PNP transistor, reduce the hot carrier damage in the on-state and the switching state, and improve the reliability of devices.

The invention discloses a super-junction MOSFET device with an improved reverse recovery characteristic, which comprises an N + substrate layer and a plurality of P columns and N columns which are alternately arranged on the N + substrate layer. A drain electrode is arranged at the bottom of the N + substrate layer; the top of the P column and the top of the N column are provided with an N epitaxial layer, the N epitaxial layer is provided with P-type body regions corresponding to the P columns in position and number, the P columns in a partial region in the super-junction MOSFET device body extend upwards to form epitaxial P columns, and the epitaxial P columns penetrate through the N epitaxial layer and are connected with the P-type body regions at the corresponding positions so as to maintain the same potential; and a dielectric layer is arranged at the tops of the P-type body regions, a source metal layer and a first metal layer which respectively correspond to the positions of the P columns and the epitaxial P columns are arranged at the top of the dielectric layer, a plurality of connecting holes are formed in the dielectric layer, and at least one diode is connected in series between the epitaxial P column and the source metal layer of the primitive cell in a forward direction or a reverse direction.

The invention discloses movable deicing equipment for urban roads, and belongs to the field of road deicing. According to the movable deicing equipment for the urban road, when a striking cylinder is embedded into the upper end of a striking pin, the position of the upper end of the striking pin deviates, so that the position of the lower end of the striking pin deviates at the same time due to rotation, and therefore a cracked ice surface is pushed; Then the lower end of the ice surface and the ground are staggered.Therefore, after the ice surface is cracked and broken, the possibility that the ice surface with local cracking still adheres to the ground is reduced. And when the adhesive cotton layer adhered with the broken ice surface gradually gets close to the piston through cylinder, the surface layer of the broken ice surface is melted by the temperature generated by the piston through cylinder. Finally, the broken ice surface is separated from the adhesive cotton layer and falls into the storage assembly to be collected. According to the structure, crushed ice can be conveniently collected, and the possibility of secondary icing caused by the crushed ice is reduced. And in the using process of the equipment, the equipment only needs to be continuously pushed, additional energy loss is avoided, and the economic cost is reduced.

The invention relates to a groove-type anode fast recovery diode with bipolar Schottky control and its manufacturing method, comprising: a cathode metal, an N-type intrinsic region above the cathode metal, and an N-type intrinsic region above the N-type intrinsic region The anode metal is provided with lightly doped N-type regions and heavily doped N-type regions spaced apart from each other on the cathode metal, the bottom of the lightly doped N-type region is in Schottky contact with the cathode metal, and in the N-type intrinsic region There are heavily doped P-type regions and lightly doped P-type regions spaced apart from the anode metal, and the upper surface of the heavily doped P-type region is lower than the upper surface of the lightly doped P-type region, forming a concave In the slot-type anode area, the lightly doped P-type area and the anode metal are in Schottky contact. The manufacturing method of the two-pole Schottky-controlled recess type anode fast recovery diode is characterized in that the Schottky contacts on the surface of the anode and the side wall can be formed simultaneously by one-step etching.

The invention relates to the technical field of transducers, in particular to a pressure compensation extremely-low-frequency bending disc transducer which comprises a transmitting assembly A and a transmitting assembly B. The transmitting assembly A and the transmitting assembly B are arranged in a matched mode and are each composed of a cover plate, a piezoelectric ceramic wafer, a plastic ring, a negative electrode soldering lug, watertight rubber and a ring shell which are the same, and the cover plate is arranged on the ring shell. The plastic ring is installed on the cover plate, a plurality of piezoelectric ceramic wafers are evenly distributed on the side face, located outside the ring shell, of the cover plate, the positive electrode faces of the piezoelectric ceramic wafers are attached to the cover plate, the negative electrode soldering lugs are connected with the negative electrode faces of the piezoelectric ceramic wafers, and the watertight rubber is attached to the outer side face of the cover plate in a sealed mode. The watertight rubber covers the piezoelectric ceramic wafer and the joint between the cover plate and the annular shells, the two annular shells are symmetrically sealed and spliced to form the integral disc transducer, the use depth can reach the kilometer level, and meanwhile the transducer has the advantages of being small in size and light in weight.