A kind of power semiconductor device and its manufacturing method

A technology for power semiconductors and manufacturing methods, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.
CN111933686BActive Publication Date: 2022-06-24ZHUZHOU CRRC TIMES SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHUZHOU CRRC TIMES SEMICON CO LTD
Publication Date
2022-06-24

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Abstract

The invention provides a power semiconductor device and a manufacturing method thereof, which solves the problem that a standard GCT chip is prone to failure at the end of the chip table in an overvoltage blocking state, resulting in an open circuit state when the device fails. It includes a functional area and a voltage breakdown area. The voltage breakdown area is close to the center of the power semiconductor device and is surrounded by the functional area. The type short-circuit structure runs through the first conductive type transparent emitter anode and the second conductive type buffer layer of the functional area; the convex second conductive type base area runs through the first conductive type first base area, the first conductive type second base area and the second conductive type base area. In the two-conductivity-type region, a raised portion is formed in the extending direction from the second-conductivity-type base region to the first-conductivity-type base region.
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Description

technical field

[0001] The present invention relates to the technical field of semiconductors, in particular to a power semiconductor device and a manufacturing method thereof. Background technique

[0002] GCT (Gate Commutated Thyristors, gate commutated thyristors) as a fully controlled power semiconductor device, because of its large blocking ability, low on-state loss, large power capacity and other advantages, it has great potential for application in flexible DC power grids in the future. There are three PN junctions inside the existing GCT device, from the anode to the cathode are J 1 Junction (anodic transparent junction), J 2 junction (blocking voltage main junction) and J 3 junction (gate cathode junction). GCT is divided into four working states: trigger (turn on), on state, turn off and block. When the GCT chip is in an overvoltage blocking state, a reverse bias voltage (or short circuit) within -20V must be applied to the gate-cathode of the device first to ...

Claims

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