A kind of semiconductor device with buffer layer structure

A semiconductor and buffer layer technology, applied in the field of power semiconductor device testing, can solve the problems of device leakage current increase, avalanche breakdown, etc., and achieve the effects of reducing leakage current, reducing chip thickness, and suppressing leakage current

CN112599587BActive Publication Date: 2022-04-29TSINGHUA UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2022-04-29

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Abstract

The invention belongs to the field of power semiconductor device testing, and in particular relates to a semiconductor device with a buffer layer structure, which includes a first dopant region, a second dopant region, and a third dopant region arranged in sequence, and also includes an alternative or a plurality of upper dopant regions, lower dopant regions, and middle dopant regions arranged in combination; the upper dopant region is located between the first dopant region and the second dopant region; the The lower dopant region is located between the second dopant region and the third dopant region; the middle dopant region is located in the middle of the second dopant region. The advantage of the present invention is that a smaller drain can be achieved. Current, thereby improving the withstand voltage capability of the device, as well as the highest junction temperature that can be operated, and increasing the flow capacity of the device.
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Description

technical field

[0001] The invention belongs to the field of testing power semiconductor devices, in particular to a semiconductor device with a buffer layer structure. Background technique

[0002] As the core component of power equipment, large-capacity power electronic devices have gradually become the key to improving reliability and reducing costs. In the application of unidirectional flow and bidirectional blocking, the device is required to have reverse blocking capability, so the method of connecting an asymmetric device in series with a diode is generally used. The reverse resistance device has forward current flow and bidirectional blocking ability, which can save the diode in series, reduce the number of devices, save cost, reduce loss, and has significant advantages in applications such as current source converters and bidirectional solid-state circuit breakers.

[0003] The traditional asymmetric device changes the electric field distribution by setting a buffe...

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Embodiment Construction

[0038] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0039] A semiconductor device with a buffer layer structure, comprising a first dopant region 1, a second dopant region 2, and a third dopant region 3 arranged in sequence, and further comprising At least one other dopant region is included between the three dopant regions 3 . Specifically, the other dopant region includes th...