A kind of semiconductor device with buffer layer structure

Abstract

The invention belongs to the field of power semiconductor device testing, and in particular relates to a semiconductor device with a buffer layer structure, which includes a first dopant region, a second dopant region, and a third dopant region arranged in sequence, and also includes an alternative or a plurality of upper dopant regions, lower dopant regions, and middle dopant regions arranged in combination; the upper dopant region is located between the first dopant region and the second dopant region; the The lower dopant region is located between the second dopant region and the third dopant region; the middle dopant region is located in the middle of the second dopant region. The advantage of the present invention is that a smaller drain can be achieved. Current, thereby improving the withstand voltage capability of the device, as well as the highest junction temperature that can be operated, and increasing the flow capacity of the device.

Description

technical field [0001] The invention belongs to the field of testing power semiconductor devices, in particular to a semiconductor device with a buffer layer structure. Background technique [0002] As the core component of power equipment, large-capacity power electronic devices have gradually become the key to improving reliability and reducing costs. In the application of unidirectional flow and bidirectional blocking, the device is required to have reverse blocking capability, so the method of connecting an asymmetric device in series with a diode is generally used. The reverse resistance device has forward current flow and bidirectional blocking ability, which can save the diode in series, reduce the number of devices, save cost, reduce loss, and has significant advantages in applications such as current source converters and bidirectional solid-state circuit breakers. [0003] The traditional asymmetric device changes the electric field distribution by setting a buffe...

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Problems solved by technology

[0004] In order to achieve reverse withstand voltage capability, reverse resistance devices can no longer be used figure 1 The structure of the buffer layer shown is because if both sides of the PN junction are highly doped, the electric field distribution is concentrated on both sides of the junction, and when the peak electric field strength exceeds the critical electric field strength, the PN junction will undergo avalanche breakdown at a very low voltage

After removing the buffer layer structure, the subsequent problem is that the leakage current of the device increases, especially the leakage current at high temperature

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