1368results about How to "Stable characteristics" patented technology

A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

A liquid droplet ejecting head includes: one or more nozzle holes ejecting liquid droplets; one or more pressure liquid chambers communicating with the nozzle holes and containing liquid to be ejected; a common liquid chamber communicating with the pressure liquid chambers; one or more diaphragms each forming a wall face of the corresponding pressure liquid chamber; one or more vibration chambers containing air gaps provided in contact with the diaphragms on the opposite side from the pressure liquid chambers; and one or more electrodes provided to oppose the diaphragms through the air gaps. The liquid droplet ejecting head further includes: a deformable plate whose deformation is greater than the total deformation of the diaphragms, the deformable plate forming a wall face of the common liquid chamber, and a pressure correcting chamber provided across the deformable plate from the common liquid chamber so as to communicate with the vibration chambers.

An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

An LDMOS transistor and a bipolar transistor with LDMOS structures are disclosed for suitable use in high withstand voltage device applications, among others. The LDMOS transistor includes a drain well region 21 formed in P-type substrate 1, and also formed therein spatially separated one another are a channel well region 23 and a medium concentration drain region 24 having an impurity concentration larger than that of drain well region 21, which are simultaneously formed having a large diffusion depth through thermal processing. A source 11s is formed in channel well region 23, while a drain 11d is formed in drain region 24 having an impurity concentration larger than that of drain region 24. In addition, a gate electrode 11g is formed over the well region, overlying the partially overlapped portions with well region 23 and drain region 24 and being separated from drain 11d. Since the source 11s, well region 23, and drain region 24 are respectively self-aligned to the gate electrode 11g, resultant transistor characteristics are stabilized, and the decrease in the on resistance and improved drain threshold voltages can be achieved. Also disclosed herein are bipolar transistors with LDMOS structures, which are capable of obviating the breakdown of gate dielectric layers even at high applied voltage and achieving improved stability in transistor characteristics.

Method of fabricating an optical element. A photodefinable composition is provided that includes (i) a hydrophobic, photodefinable polymer, said photodefinable polymer having a glass transition temperature in the cured state of at least about 80° C.; and (ii) a multiphoton photoinitiator system comprising at least one multiphoton photosensitizer and preferably at least one phtoinitiator that is capable of being photosensitized by the photosensitizer. One or more portions of the composition are imagewise exposed to the electromagnetic energy under conditions effective to photodefinably form at least a portion of a three-dimensional optical element.

The present invention provides a transistor having electrically stable characteristics. In addition, the reliability of a semiconductor device including such a transistor is increased. The semiconductor device includes a gate electrode layer, a gate insulating film over the gate electrode layer, an oxide semiconductor stacked film overlapping with the gate electrode layer with the gate insulating film provided therebetween, and a pair of electrode layers in contact with the oxide semiconductor stacked film. In the semiconductor device, the oxide semiconductor stacked film includes at least indium and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked. Further, the first oxide semiconductor layer has an amorphous structure, the second oxide semiconductor layer and the third oxide semiconductor layer include a crystal part whose c-axis is substantially perpendicular to a top surface of the oxide semiconductor stacked film.

A semiconductor device may include a composite represented by Formula 1 below as an active layer.

x(Ga₂O₃)·y(In₂O₃)·z(ZnO)  Formula 1

wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrode 8 formed on an organic semiconductor film 2 made of an organic semiconductor material with a gate insulating film 3 interposed therebetween; and a source electrode 6 and a drain electrode 7 provided so as to come in contacts with the organic semiconductor film with the gate electrode 8 interposed therebetween. At least one of the source electrode 6 and the drain electrode 7 is formed in contact with the organic semiconductor film 2 with charge injection layers 4 and 5 made of an inorganic material interposed therebetween.

A portable wireless communication terminal device has a data communications function and a telephone function and includes a casing, a display having a display section exposed through an opening of the casing, a circuit board installed in the casing and having the display on one surface of the circuit board, a first antenna electrically connected to the circuit board and disposed on an opposite side to the display inside the casing, and a second antenna electrically connected to the circuit board and mounted on a periphery of the display inside the casing. The device maintains a stable antenna characteristic and communication quality even if it is placed on a table or if the fingers of a user cover the backside of the device.

A vibration actuator includes an electromechanical transducer having a magnetic circuit (1-4) and a driving coil (5), a support frame (9), and a damper (270) elastically supporting the magnetic circuit onto the support frame to flexibly damp the vibration of the magnetic circuit when a driving AC current is supplied to the coil (5). The damper (270) comprises inner and outer ring portions (271, 272) and a plurality of spiral spring portions (273) determined by a plurality of spiral slits (274, 275) formed in the damper. In order to reduce the spiral spring portion determined by the adjacent two spiral slits in its compliance, each of the spiral spring portions has an effective spring length determined by an effective angle (theta) which is determined as an angle (by angular degree) from an inner end of the inner spiral slit to an outer end of the outer spiral slit defining each respective spiral spring portion around a center of the damper. The effective angle is 55 angular degree or more. In a preferable example, the effective spring length is determined by a product (r.theta) of an average radius (r) value by the unit of "mm" and the effective angle (theta) value by unit of the angular degree. The effective spring length is selected to 320 or more, and preferably 400 or more.

It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

Disclosed herein is a thin film transistor including: a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer. The source electrode and the drain electrode are formed by use of iridium or iridium oxide.

Provided is a method for manufacturing a transistor by which the defective shape of a semiconductor device is prevented in the case where a source electrode layer and a drain electrode layer are formed on an oxide semiconductor film. A source electrode layer and a drain electrode layer are formed each having a cross-sectional shape with which disconnection of a gate insulating film is unlikely to occur even when the gate insulating film over the source electrode layer and the drain electrode layer has a small thickness. An oxide semiconductor film having a crystal structure over an insulating surface is formed; an electrode layer on the oxide semiconductor film is formed; and a thickness of an exposed portion of the oxide semiconductor film is reduced by exposing the oxide semiconductor film to dilute hydrofluoric acid with a concentration higher than 0.0001% and lower than or equal to 0.25%.

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a first p-AlGaN layer, a second p-AlGaN layer and a high concentration p-GaN layer are formed in this order on a substrate. A gate electrode establishes ohmic contact with the high concentration p-GaN layer. A source electrode and a drain electrode are formed on the undoped AlGaN layer. Two-dimensional electron gas generated at the interface between the undoped AlGaN layer and the undoped GaN layer and the first and second p-AlGaN layers form a pn junction in a gate region. The second p-AlGaN layer covers a SiN film in part.

It is an object of the present invention to provide a radio communication medium processor having a stable performance that does not receive a limitation for an installed place, especially, the influence of a metallic structure, does not need to adjust the resonance frequency of an antenna or an impedance, is excellent in its convenience and extensibility upon installation and strong for unnecessary noise from a periphery. In electric current fed loop antenna units, non-electric current fed loop antenna are arranged in doughnut shapes outside the substantially same planes of electric current fed loop antennas so as to surround the electric current fed loop antennas. Thus, when non-electric current fed loop antenna units are installed linearly, in radial directions and in arrays adjacently to electric current fed loop antenna units, the influence of the non-electric current fed loop antenna units to the antenna characteristics of the electric current fed loop antenna units can be suppressed. When the non-electric current fed loop antenna units are extended and increased, the antennas of the electric current fed loop antenna units do not need to be adjusted.

An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface.

A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.

A non-volatile memory device comprises a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the lower electrode is composed of at least one of Pt, Ru, Ir, IrOx and an alloy thereof, the second oxide layer is a transition metal oxide, the buffer layer is composed of a p-type oxide and the upper electrode is composed of a material selected from Ni, Co, Cr, W, Cu or an alloy thereof.