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122results about How to "Reduce operating current" patented technology
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Circuit, system and method for selectively turning off internal clock drivers
ActiveUS7089438B2Reduce operating currentExtend battery lifeEnergy efficient ICTDigital storageComputerized systemEngineering
The present invention includes a circuit, system and method for selectively turning off internal clock drivers to reduce operating current. The present invention may be used to reduce power consumption by reducing operating current in a memory device. Operating current may be reduced by turning off internal clock drivers that deliver a clock signal during selected periods of time. According to an embodiment of clock control circuitry of the present invention, an internal clock is disabled if a no operation command is detected during periods of time when no read or write burst operation is taking place. Methods, memory devices and computer systems including the clock control circuitry and its functionality are also disclosed.
Owner:MOSAID TECH
Chalcogenide random access memory and method of fabricating the same
ActiveUS6972429B1Reduce the differenceReduce operating currentSemiconductor/solid-state device detailsSolid-state devicesDopantStatic random-access memory
A method of fabricating a chalcogenide random access memory (CRAM) is provided. The method is to provide a substrate having a bottom electrode thereon and then form a chalcogenide film and a patterned mask corresponding to the bottom electrode sequentially over the substrate. Thereafter, using the patterned mask, an ion implantation is performed to convert a portion of the chalcogenide film into a modified region while the chalcogenide film underneath the patterned mask is prevented from receiving any dopants and hence is kept as a non-modified region. The modified region has a lower conductivity than the non-modified region. After that, the patterned mask is removed and then a top electrode is formed over the non-modified region. Utilizing the ion implantation as a modifying treatment, the contact area between the chalcogenide film and the bottom electrode is decreased and the operating current of the CRAM is reduced.
Owner:MACRONIX INT CO LTD
Control method of air conditioner
ActiveCN104236010AReduce operating currentSpace heating and ventilation safety systemsLighting and heating apparatusRunning timeControl theory
The invention discloses a control method of an air conditioner. The control method includes the steps of S1, detecting running time and running current of a compressor of the air conditioner, in a refrigerating mode; S2, comparing the detected running current of the compressor to a first preset value; S3, if the detected running current of the compressor is higher than or equal to the first preset value, controlling the speed of an indoor fan of the air conditioner to decrease from a current level to a preset level; if the detected running current of the compressor is lower than a first preset value, returning to the step S2. The preset level of speed is lower than a low level of speed of the air conditioner. The control method has the advantages that when the detected running current of the compressor is higher than or equal to the first preset value, the air level of the air conditioner is switched from the current air level to a current protective air level; the running current of the compressor is effectively decreased, current protection is effectively achieved accordingly, the fact that frequent shutoff of the compressor causes frequent trip of the air conditioner is avoided, and comfort of use is improved for users.
Owner:GUANGDONG MIDEA GRP WUHU REFRIGERATING EQUIP CO LTD +1
Method for reducing quenching-oil viscosity of ethene producer
ActiveCN101074184AAdjust injection volume at any timeIncrease temperatureHydrocarbon by hydrocarbon crackingGasolineOil viscosity
A method for breaking viscosity quenching oil of ethane apparatus is carried out by cooling pyrolysis gas from pyrolyzer, delivering it into oil-leaching tower bottom, separating from substances to form triple backflows, cooling by quenching oil at tower bottom, returning to oil-leaching tower partially, entering backflow gasoline at tower top into by pipeline, cooling substances from pyrolyzer and delivering into after system. It's stable, has high viscosity and saves energy resources.
Owner:PETROCHINA CO LTD
Memory element and manufacturing method thereof
InactiveCN101271862AReduce operating currentReduce manufacturing costSolid-state devicesSemiconductor/solid-state device manufacturingOptoelectronicsPhase change
The invention relates to a memory element. A cylindrical structure comprises a first electrode layer, a dielectric layer on the first electrode layer and a second electrode layer on the dielectric layer. A phase change layer coats around the cylindrical structure. A bottom electrode is electrically connected with the first electrode layer of the cylindrical structure. A top electrode is electrically connected with the second electrode layer of the cylindrical structure.
Owner:西格斯教育资本有限责任公司
Ultra-low-power organic resistance changing memory device and manufacturing method thereof
ActiveCN102610755AEasy to prepareEasy to scale upSolid-state devicesSemiconductor/solid-state device manufacturingAsic technologyUltra low power
The invention discloses an ultra-low-power organic resistance changing memory device and a manufacturing method of the ultra-low-power organic resistance changing memory device, belonging to the technical field of organic electronics and CMOS-mixed integrated circuit. The device is manufactured on a substrate, a device unit is an MIM capacity structure, a bottom layer of the MIM structure is an inert electrode such as metal or non-metal conductive thin-film, a top layer of the MIM structure is an active electrode such as metal Al, a middle function layer of the MIM sturcture is a poly-p-xylylene polymer film growing after multi-deposition. According to the invention, the device adopts the poly-p-xylylene polymer film growing after multi-deposition as the function layer, programming current of a memory is less than 0.5 muA, and erase current of the memory is reduced to about 10 nA or lower, therefore, the ultra-low-power operations of the organic resistance changing memory are implemented.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Interface layer improvements for nonvolatile memory applications
InactiveUS20130065377A1Reduce operating currentSolid-state devicesSemiconductor/solid-state device manufacturingSilicon electrodeInterface layer
A resistive switching nonvolatile memory device having an interface layer disposed between a doped silicon electrode and a variable resistance layer fabricated in the nonvolatile memory device and methods of fabricating the same. In one embodiment, the interface layer is a high-k layer having a lower electrical EOT than native silicon oxide to act as a diffusion barrier between the variable resistance layer and the silicon electrode. Alternatively, the high-k interface layer may be formed by performing a nitrogen treatment on a fabricated silicon oxide layer. In another embodiment, the interface layer may be fabricated by performing a nitrogen or ozone treatment on the native oxide layer. In another embodiment, the interface layer is a fabricated silicon oxide layer resulting in an improved diffusion barrier between the variable resistance layer and the silicon electrode. In all embodiments, the interface layer also passivates the surface of the silicon electrode.
Owner:KK TOSHIBA +1
Optoelectronic waveguiding device, structural body including the same, and optical module
InactiveUS20050195876A1Satisfactorily dissipate heat from active regionWithout deteriorating thermal dissipation performanceOptical wave guidanceSemiconductor laser structural detailsOptical ModuleDriver/operator
A server system has servers that can be operated through switching as a primary system and a standby system, and a shared disk unit for storing data accessed by the servers. Each of the servers has a driver that acquires information on a configuration inside the shared disk unit after starting of the system. The driver sets the shared disk unit in an active state in which an access request can be sent to the shared disk unit. Access control determines whether the access request issued by an application should be sent on the basis of a management table indicating inhibited types of access requests for each access destination. The access control sends the access request to the driver when the access request is not inhibited for an access destination of the access request. By this arrangement, hot standby switching processing can be performed at high speed.
Owner:LUMENTUM JAPAN INC
Rear axle of electric tricycle
InactiveCN101020416AImprove adaptabilityGood differential effectElectric propulsion mountingControl devicesLeft halfGear wheel
The present invention is rear axle of electric tricycle, and belongs to the field of vehicle technology. The rear axle includes a rear axle box, a large bevel gear inside the rear axle box, a differential housing connected to the large bevel gear and with first and second planetary gears, a pair of right and left half-shaft gears meshed with the first and second planetary gears, a pair of right and left half shafts matching the right and left half-shaft gears and the first and second planetary gears separately, a pair of left half shaft sleeves, a motor connected to the rear axle box, and a driving small bevel gear fixed on the output shaft of the motor and meshed with the large bevel gear. The present invention has the advantages of raised road condition adaptability, good operating effect, high safety, less power loss, etc.
Owner:张重
Latent heat energy saving device of outdoor machine of air conditioning unit
InactiveCN103245013AReduce operating currentSave electricitySpace heating and ventilation safety systemsLighting and heating apparatusWater circulationBall valve
The invention discloses a latent heat energy saving device of an outdoor machine of an air conditioning unit. The latent heat energy saving device of the outdoor machine of the air conditioning unit comprises a multi-hole hydrophilic material module, a water circulation system and a monitor, wherein the multi-hole hydrophilic material module comprises multi-hole hydrophilic materials, a water spraying disk, a water collecting disk, a water spray nozzle, a metal plate connection plate or a soft connection plate and a temperature-humidity sensor; the water circulation system comprises a water tank, a pump group, a spraying water supply pipe, a water supply pipe of the water tank, a return water pipe, a draining pipe, a magnetic valve of the spraying water supply pipe, a ball valve of the water supply pipe of the water tank, a magnetic valve of the draining pipe and a float switch; the water circulation system is used for providing circulation water source for the multi-hole hydrophilic material module; the multi-hole hydrophilic material module is used for providing water screens of a wind inlet side of the outdoor machine; and the temperature-humidity sensor, the magnetic valve of the spraying water supply pipe, the magnetic valve of the spraying water supply pipe, the magnetic valve of the draining pipe and the pump group are correspondingly connected with the monitor. The latent heat energy saving device is capable of effectively reducing the air inlet temperature of the outdoor machine of the air conditioning unit after being connected with the outdoor machine, accordingly the operation efficiency of an air conditioner is reduced, electric power is saved, and 18 to 36 % power is saved.
Owner:SICHUAN SUP INFO INFORMATION TECH
Semiconductor device and data processing system comprising semiconductor device
InactiveUS20110063935A1Reduce operating currentReduce stepsDigital storageData processing systemPower semiconductor device
A semiconductor device comprises a sense amplifier circuit amplifying a signal transmitted through the bit line, first / second data lines transmitting the signal amplified by the sense amplifier circuit, a read amplifier circuit driven by a first voltage and amplifying the signal; first / second switch circuits controlling connection between the above components, first / second voltage setting circuits setting the second / third data lines to a second voltage lower than the first voltage. A predetermined voltage obtained by adding the second voltage to a threshold voltage of a transistor in the second / third switch circuit is applied to the gate terminal thereof, and ends of the data lines are connected to the source and drain terminals thereof.
Owner:PS4 LUXCO SARL
Reflection electrode structure, LED device and preparation method
ActiveCN104393139AImprove light outputLow absorption rateSemiconductor devicesNitride semiconductorsElectrode
The application discloses a reflection electrode structure which is arranged on a nitride semiconductor layer. The reflection electrode structure comprises a reflection part and an electrode part which is arranged on the reflection part. The reflection part is composed of a first Ni layer and an Al layer which are outwardly arranged in turn from the surface of the nitride semiconductor layer. The electrode part is composed of a Cr layer, a second Ni layer and an Au layer which are outwardly arranged in turn from the Al layer of the reflection part, or is composed of the Cr layer, a Pt layer and the Au layer which are outwardly arranged in turn from the Al layer of the reflection part, or is composed of the second Ni layer, the Pt layer and the Au layer which are outwardly arranged in turn from the Al layer of the reflection part, or is composed of a Ti layer, the Pt layer and the Au layer which are outwardly arranged in turn from the Al layer of the reflection part, or is composed of the Ti layer, the Pt layer, the Ti layer, the Pt layer, the Ti layer, the Pt layer and the Au layer which are outwardly arranged in turn from the Al layer of the reflection part. Light emergent efficiency of the electrode can be enhanced and operation current can be reduced.
Owner:XIANGNENG HUALEI OPTOELECTRONICS
Three-dimensional stacked phase change memory and preparation method thereof
ActiveCN110707209AIncrease processing costReduce demandSolid-state devicesSemiconductor devicesPhase-change memoryPhysical chemistry
The invention belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method specifically comprises the following steps of preparing a multi-layer structure on which a horizontal electrode layer and an insulating layer are crossly stacked, on a substrate; then etching toform a groove and a discrete three-dimensional strip-shaped electrode; filling an insulating medium in the groove, forming small holes in the boundary area of the three-dimensional strip-shaped electrode and the insulating medium, sequentially depositing a phase change material on the walls of the small holes, and filling an electrode material in the small holes to prepare a vertical electrode, thereby obtaining the multi-layer stacked three-dimensional stacked phase change memory. According to the present invention, by improving the whole flow process of the preparation method, a three-dimensional phase change memory array can be established by utilizing the vertical electrode structure, and compared with the prior art, the problems of complex multi-layer stacking steps, high process implementation difficulty, unit size miniaturization and the like of an existing three-dimensional stacked phase change memory in process preparation, can be effectively solved.
Owner:HUAZHONG UNIV OF SCI & TECH
Erasing and writing method of phase change memory
ActiveCN101699562AReduce operating currentReduce power consumptionRead-only memoriesDigital storagePhase-change memoryPhase-change material
The invention discloses an erasing and writing method of a phase change memory. The erasing operation is realized in a way that: applying a small-pulse-height pulse on a phase change material in the device, wherein the pulse enables the phase change material to right achieve the fusion temperature and partially form amorphous areas in the phase change material; and continuing to applying a plurality of small-pulse-height pulses, and accumulating amorphous areas in the phase change material until the device is transferred from low impedance state to high impedance state. The invention realizes the erasing and writing operations by utilizing the accumulating function; on one hand, low heat produced by the small pulse height is beneficial for stability of the material, and on the other hand, the small pulse height can ensure the application of the phase change memory in the environment requiring low programming current (voltage), thereby reducing the energy consumption of the device and greatly saving the cost for optimizing the device structure under the condition of no change of the device structure of the phase change memory.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Bimetal composite type abrasion-resistant liner plate and manufacturing method
InactiveCN105457722AReasonably optimize the thicknessReduce weightGrain treatmentsCarbon steelQuenching
The invention provides a bimetal composite type abrasion-resistant liner plate and a manufacturing method, and relates to the technical field of instruments. The key technology of 'bimetal composite' is adopted, one face of a middle steel plate of the bimetal composite type abrasion-resistant liner plate is connected with a high-chromium iron casting containing a metamorphic complex agent in a casting mode, and the other face of the middle steel plate of the bimetal composite type abrasion-resistant liner plate is connected with a carbon steel casting in a casting mode. The manufacturing method for the bimetal composite type abrasion-resistant liner plate comprises the steps that 1, a high-chromium iron casting model in a liner plate casting model is casted through high-chromium cast iron molten lava containing the metamorphic complex agent, a carbon steel casting model in the liner plate casting model is casted through carbon steel molten lava at the same time, and manufactured rough casting bodies are combined into a casting; 2, the casting is made into a quenching casting through air cooling and quenching; and 3, the quenching casting is made into the bimetal composite type abrasion-resistant liner plate through tempering. The bimetal composite type abrasion-resistant liner plate is applied to a ball mill and is skillful in structure, simple in manufacturing method, stable and reliable in effect, easy to manufacture and low in cost.
Owner:HUNAN DATANG ENERGY SAVING SCI & TECH CO LTD
Phase change storage device based on antimony telluride composite phase change material and preparation method thereof
InactiveCN101916823AAchieve reversible transformationHigh speed crystallizationElectrical apparatusPhase changeAntimony telluride
The invention relates to a phase change storage device based on an antimony telluride composite phase change material and a preparation method thereof, belonging to the field of computer technology. The device comprises a substrate, a lower electrode, a heat generation electrode layer, an insulating layer, a phase change material layer and an upper electrode, wherein the phase change material layer is a composite phase change material layer containing antimony telluride and silicon nitride; the atom percent content range of the silicon nitride is 0.5-30; and the proportional range of Sb atoms and Te atoms in the phase change material layer is 80 / 20-30 / 70. The composite phase change material layer which has high crystallization velocity and higher heat generation efficiency is used by the phase change storage device of the invention, thus the operation velocity of the phase change storage device can be improved, and the RESET operation current of the phase change storage device can be lowered.
Owner:SHANGHAI JIAO TONG UNIV
Power detection circuit for switching power supply
InactiveCN106645927AHigh precisionReduce operating currentCurrent/voltage measurementPower measurement by current/voltageElectrical resistance and conductanceCurrent limiting
The invention discloses a power detection circuit for a switching power supply, and the circuit is disposed on a power line. The power line is provided with at least one current sampling resistor. The circuit comprises a current detection circuit which is provided with a current sampling end and a current output end in parallel connection with the current sampling resistor and is used for detecting the value of a current in the power line; a voltage detection circuit which is provided with a voltage sampling end and a voltage output end, which are in connection with a positive electrode and a negative electrode, and is used for detecting the value of a voltage in the power line; and a multiplying circuit which is connected with the current output end and the voltage output end, enables the detected current and voltage to be multiplied, and outputs the power value. The current detection circuit comprises a first current-limiting resistor, a decoupling capacitor, an optical coupled isolator and a first differential amplification circuit, wherein the first current-limiting resistor, the decoupling capacitor, the optical coupled isolator and the first differential amplification circuit are connected sequentially. The voltage detection circuit comprises a second differential amplification circuit. The voltage measurement value and the current measurement value are multiplied through the multiplying circuit, thereby obtaining the power. The whole power detection circuit is precise in voltage detection, is small in operation current, and is low in cost.
Owner:UNIV OF SHANGHAI FOR SCI & TECH
Phase change memory gate tube and storage unit of phase change memory gate tube
InactiveCN104347800AImprove the heating effectReduce operating currentSolid-state devicesSemiconductor devicesPhase-change memoryEngineering
A phase change storage technology is a new generation of storage technology with excellent performance, the technical node limitation is avoided, when the size is smaller, the performance is more excellent, the speed is higher, and the power consumption is lower. The invention provides a phase change memory device unit, which consists of a field effect tube and a variable-resistant element based on a chalcogenide compound material, wherein an MoS2 field effect tube is used as a gate tube, and the chalcogenide compound variable-resistant element realizes the information storage. The MoS2 is a ultra-thin two-dimensional chalcogenide compound semiconductor material, the MoS2 field effect tube has smaller size and lower energy consumption than the conventional silicon field effect tube, the power consumption is only hundred thousandth of that of the silicon material according to reports in the prior art, the room temperature migration rate reaches 200 cm<2> / Vs, and the room temperature current switch ratio reaches 108. The MoS2 field effect tube and the chalcogenide compound variable-resistant element are combined for forming a phase change memory device unit, and the low-power-consumption high-speed and high-density phase change memory can be realized.
Owner:QUFU NORMAL UNIV
Optoelectronic waveguiding device, structural body including the same, and optical module
InactiveUS7257138B2Satisfactorily dissipate heat from active regionWithout deteriorating thermal dissipation performanceOptical wave guidanceSemiconductor laser structural detailsOptical ModuleEngineering
Owner:LUMENTUM JAPAN INC
Control method and device for load of air conditioner
InactiveCN108870682AReduce operating currentReduce loadMechanical apparatusEfficient regulation technologiesPower flowLow voltage
The invention provides a control method and device for a load of an air conditioner and relates to the technical field of air conditioners. According to the control method and device for the load of the air conditioner, operation current of the air conditioner is acquired, a current operation mode of a fan is determined, and according to the operation current and the current operation mode of thefan, the operation mode of the fan and / or the operation state of a compressor is adjusted, so that the load of the air conditioner is adjusted; when the operation current reaches the maximum value required by a power line, the operation mode of the fan and / or the operation state of the compressor is adjusted, the load of the air conditioner is lowered accordingly, the aim of reducing the operationcurrent is achieved, and the problem is solved that due to frequent protection, the air conditioner cannot achieve refrigeration under low voltage or bad working conditions.
Owner:AUX AIR CONDITIONING LTD BY SHARE LTD
Yellowing process of viscose production
The invention provides a yellowing process of viscose production. The process comprises the following steps: (A) after yellowing reaction is ended, adding primary dissolution alkali and secondary dissolution alkali into a yellowing machine successively, and adding primary dissolution water while adding secondary dissolution alkali; (B) opening a discharging valve to enable cellulose sulfonate in the yellowing machine to flow to a grinding machine from a discharging pipeline, and adding secondary dissolution water into the discharging pipeline while opening the discharging valve; (C) when the discharging rate is more than 90%, adding flushing alkali into the yellowing machine, and fully discharging, namely ending a yellowing cycle. According to the process, the dissolution water is added while the dissolution alkali is added, so that the time for separately adding the dissolution water is saved and the purposes of shortening the production cycle of the yellowing machine, increasing the production capacity of the yellowing machine, improving the operating stability of equipment and reducing the current consumption of the equipment and the energy consumption are achieved.
Owner:CHENGDU GRACE FIBER +1
Asymmetric annular microelectrode phase change storage unit and device
ActiveCN107017341AReduce operating currentImprove thermal crosstalkSolid-state devicesSemiconductor devicesNon symmetricMicroelectrode
The invention discloses an asymmetric annular microelectrode phase change storage unit and device. The asymmetric annular microelectrode phase change storage unit comprises a lower electrode layer, a first insulating layer, a phase change function layer, a second insulating layer, and an upper electrode layer from bottom to top, the first insulating layer is provided with a small hole, a metal annular sidewall and an insulating core are arranged in the small hole, the phase change function layer is contacted with a lower electrode through the metal annular sidewall in the small hole of the first insulating layer, the second insulating layer is also provided with a small hole, and an upper electrode is contacted with the phase change function layer through the small hole of the second insulating layer. The asymmetric annular microelectrode phase change storage unit is characterized in that the lower electrode is an annular electrode, an electrode core is filled with an insulating material, and the center line of the small hole of the first insulating layer, the center line of the phase change function layer, and the center line of the small hole of the second insulating layer are all not in the same straight line. According to the asymmetric annular microelectrode phase change storage unit and device, the contact area of the lower electrode and the phase change material is greatly reduced, the operation current is reduced, the thermal property is good, the original property of the device can be maintained, the power consumption is reduced, and the thermal crosstalk is reduced.
Owner:HUAZHONG UNIV OF SCI & TECH
Methods for manufacturing phase change memory
ActiveCN103840077AInhibit sheddingHigh degree of bindingElectrical apparatusPhase-change memoryDiffusion barrier
The invention provides two methods for manufacturing a phase change memory. According to the methods, a phase change material peeling phenomenon of the phase change memory is avoided. According to the first technical scheme, the method comprises the steps that a TiON bonding layer is arranged between a phase change material and a dielectric layer covering a lower electrode, the bonding degree between the dielectric layer and the phase change material is increased through the TiON bonding layer, so that the phase change material is prevented from falling off, and therefore the reliability of the phase change memory is improved. According to the second technical scheme, the bonding layer of a side-wall shape is formed to increase the bonding performance of the phase change material, a diffusion impervious layer of the side wall and the dielectric layer of the side wall; due to the fact that the size of the bottom of the side wall is larger than the size of the top of the side wall, the size of the bottom of a space where the phase change material is deposited is made to be smaller than the size of the top of the space, the contact area of the phase change material and the lower electrode is reduced, in other words, the bonding performance of the phase change material, the diffusion impervious layer of the side wall and the dielectric layer of the side wall is increased through the bonding layer of the side-wall shape is increased, the contact area of the phase change material and the lower electrode is reduced, and an operation current is reduced.
Owner:SEMICON MFG INT (SHANGHAI) CORP
Electrocatalytic oxidation device running under ultrahigh voltage condition and process method
ActiveCN105967282AAvoid the problem of low rectification efficiencyImprove utilization efficiencyWater/sewage treatment apparatusWater/sewage treatment by oxidationEngineeringElectrical and Electronics engineering
The invention discloses an electrocatalytic oxidation device running under an ultrahigh voltage condition and a process method. The electrocatalytic oxidation device comprises a multi-stage serial spherical particle active electrode reaction device and a direct-current stabilized power supply device capable of generating ultrahigh voltage, wherein the interior of the multi-stage serial spherical particle active electrode reaction device contains a set of multi-stage serial spherical particle active electrode reaction system; particle electrodes are equidistantly fixed into A rows, B columns and C layers through positioning insulated plastic rods; a first spherical particle active electrode is connected with the positive electrode of the power supply device, and a (A*B*C)th spherical particle active electrode is connected with the negative electrode of the power supply device; a power-generating main body of the direct-current stabilized power supply device capable of generating the ultrahigh voltage is a rotor-type frictional electrifier; a rotating wheel of the electrifier is driven by a frequency-variable motor; the rotating speed rate of the rotor-type frictional electrifier is adjusted by controlling different rotating speeds of the motor; and output voltage is stabilized by a voltage-stabilizing device to obtain ultrahigh direct-current voltage of 2000-50000V.
Owner:CNOOC TIANJIN CHEM RES & DESIGN INST +1
Magnetic rotating arc plasma generator
The invention relates to a magnetic rotating arc plasma generator, and belongs to the technical field of plasma generators. The magnetic rotating arc plasma generator comprises a cathode, a magnetic rotating arc anode, a rotational flow ring and an anode water channel, and is characterized in that the cathode and the magnetic rotating arc anode are arranged in a coaxial manner; the magnetic rotating arc anode comprises an arc starting anode, a transition anode and a main anode, the transition anode comprises a conducting section and an insulating section, and the main anode comprises an electromagnetic coil and a main anode body. The magnetic rotating arc anode is in the shape of a special-shaped circular tube on the whole, one end of the magnetic rotating arc anode is in the shape of a bell mouth, and the middle of the magnetic rotating arc anode is provided with a through hole. The air flow generates a rotational flow through the rotational flow ring, the electromagnetic coil generates an electromagnetic field, the rotational flow and the electromagnetic field compress the arc together and drive the arc to rotate, thereby enabling the root of the arc to rotate with a high speed on the main anode. The magnetic rotating arc plasma generator has the advantages of high arc voltage, low operating current, high electric-thermal conversion efficiency, small electrode ablation amount, small fluctuation range of arc voltage, wide power adjustment range, low operation cost, good disassembly and assembly characteristic, high practicability and the like.
Owner:XUZHOU KERONG ENVIRONMENTAL RESOURCES CO LTD
Oscillating motor and electric clippers
ActiveUS20180361601A1High torqueReduce drive powerDynamo-electric machinesMetal working apparatusElectric clipperElectrical polarity
Provided is an oscillating motor and electric clippers. The oscillating motor includes a U-shaped magnetic yoke, four permanent magnets and a swing arm. The U-shaped magnetic yoke causes end faces of two support legs to produce alternating magnetic poles with the control circuit. The four permanent magnets are fixedly mounted to an inner arm via a second magnetic yoke. The four permanent magnets are sequentially distributed on a same circumferential surface having a fulcrum being a circle centre. The polarities of radial end faces of the first permanent magnet and the fourth permanent magnet are the same. The polarities of radial end faces of the second permanent magnet and the third permanent magnet are the same, and the opposite of the polarity of the radial end face of the first permanent magnet. When a coil is electrified, the four permanent magnets produce torque having the same direction of rotation.
Owner:HU JIANKUN
Single gate pole non-volatile internal storage and its operation method
ActiveCN101051639AAdd quick erase methodReduce operating currentSolid-state devicesRead-only memoriesCapacitanceCurrent consumption
The non-volatile memory includes transistor and capacitance structure embedded in substrate of semiconductor. The transistor includes first electric gate electrode, first dielectric layer, and first ion adulteration area. The capacitance structure includes second electric gate electrode, second dielectric layer, and second ion adulteration area. The first electric gate electrode and the second electric gate electrode are connected each other in electrically to form single suspended jointed gate electrode of memory cell. Using reversal bias, the memory cell can carry out writing, erasing, and reading operations. When operation on insulated trap area, applying positive, negative voltages to drain electrode, gate electrode and silicon substrate or trap area, the method generates inverse layer to reduce absolute voltage and area of boost up circuit so as to lower current consumption.
Owner:YIELD MICROELECTRONICS CORP
Three-dimensional stacked phase change memory and preparation method thereof
ActiveCN109524543AReduce the number of photolithographyReduce the size of the phase transition regionSolid-state devicesSemiconductor devicesPhase-change memoryMiniaturization
Owner:HUAZHONG UNIV OF SCI & TECH
Yellowing system for viscose fiber production
Owner:CHENGDU GRACE FIBER +1
Continuous casting permanent magnet spiral magnetic field stirrer
ActiveCN110152545AReduce volumeReduce weightTransportation and packagingMixer accessoriesMetallurgyMagnetic poles
The invention discloses a continuous casting permanent magnet spiral magnetic field stirrer which comprises a steel cylinder, magnetic steel, a stator iron core and a shell. The continuous casting permanent magnet spiral magnetic field stirrer is characterized in that the shell is of a topless bottomless tubbish structure; the steel cylinder is of a topless bottomless tubbish structure; the steelcylinder is sleeved by the shell in a concentric manner; the stator iron core is fixed on the inner wall of the shell; a coil is embedded into the stator iron core to form a stator winding; the magnetic steel is fixed on the outer wall of the steel cylinder in a manner of surrounding the steel cylinder to form a rotor magnetic pole; two pieces of magnetic steel arranged in a spiral line are fixedon the inner wall of the steel cylinder; the two pieces of magnetic steel arranged in the spiral line mutually form an angle of 180 degrees in symmetry with the steel cylinder as a center; an includedangle of 40 degrees is formed by a head block and a tail block of each piece of magnetic steel to form an internal spiral magnetic field; and both ends of the stator iron core are assembled inside the shell through bearings. The stirrer is small in size, light in weight, simple in transmission, flexible to control, stable in performance, low in energy consumption, good in practicability and easyto popularize.
Owner:包钢集团电气有限公司
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