121results about How to "Reduce operating current" patented technology

The present invention includes a circuit, system and method for selectively turning off internal clock drivers to reduce operating current. The present invention may be used to reduce power consumption by reducing operating current in a memory device. Operating current may be reduced by turning off internal clock drivers that deliver a clock signal during selected periods of time. According to an embodiment of clock control circuitry of the present invention, an internal clock is disabled if a no operation command is detected during periods of time when no read or write burst operation is taking place. Methods, memory devices and computer systems including the clock control circuitry and its functionality are also disclosed.

A method of fabricating a chalcogenide random access memory (CRAM) is provided. The method is to provide a substrate having a bottom electrode thereon and then form a chalcogenide film and a patterned mask corresponding to the bottom electrode sequentially over the substrate. Thereafter, using the patterned mask, an ion implantation is performed to convert a portion of the chalcogenide film into a modified region while the chalcogenide film underneath the patterned mask is prevented from receiving any dopants and hence is kept as a non-modified region. The modified region has a lower conductivity than the non-modified region. After that, the patterned mask is removed and then a top electrode is formed over the non-modified region. Utilizing the ion implantation as a modifying treatment, the contact area between the chalcogenide film and the bottom electrode is decreased and the operating current of the CRAM is reduced.

A method for breaking viscosity quenching oil of ethane apparatus is carried out by cooling pyrolysis gas from pyrolyzer, delivering it into oil-leaching tower bottom, separating from substances to form triple backflows, cooling by quenching oil at tower bottom, returning to oil-leaching tower partially, entering backflow gasoline at tower top into by pipeline, cooling substances from pyrolyzer and delivering into after system. It's stable, has high viscosity and saves energy resources.

The invention relates to a memory element. A cylindrical structure comprises a first electrode layer, a dielectric layer on the first electrode layer and a second electrode layer on the dielectric layer. A phase change layer coats around the cylindrical structure. A bottom electrode is electrically connected with the first electrode layer of the cylindrical structure. A top electrode is electrically connected with the second electrode layer of the cylindrical structure.

The invention discloses an ultra-low-power organic resistance changing memory device and a manufacturing method of the ultra-low-power organic resistance changing memory device, belonging to the technical field of organic electronics and CMOS-mixed integrated circuit. The device is manufactured on a substrate, a device unit is an MIM capacity structure, a bottom layer of the MIM structure is an inert electrode such as metal or non-metal conductive thin-film, a top layer of the MIM structure is an active electrode such as metal Al, a middle function layer of the MIM sturcture is a poly-p-xylylene polymer film growing after multi-deposition. According to the invention, the device adopts the poly-p-xylylene polymer film growing after multi-deposition as the function layer, programming current of a memory is less than 0.5 muA, and erase current of the memory is reduced to about 10 nA or lower, therefore, the ultra-low-power operations of the organic resistance changing memory are implemented.

The present invention is rear axle of electric tricycle, and belongs to the field of vehicle technology. The rear axle includes a rear axle box, a large bevel gear inside the rear axle box, a differential housing connected to the large bevel gear and with first and second planetary gears, a pair of right and left half-shaft gears meshed with the first and second planetary gears, a pair of right and left half shafts matching the right and left half-shaft gears and the first and second planetary gears separately, a pair of left half shaft sleeves, a motor connected to the rear axle box, and a driving small bevel gear fixed on the output shaft of the motor and meshed with the large bevel gear. The present invention has the advantages of raised road condition adaptability, good operating effect, high safety, less power loss, etc.

The invention discloses a latent heat energy saving device of an outdoor machine of an air conditioning unit. The latent heat energy saving device of the outdoor machine of the air conditioning unit comprises a multi-hole hydrophilic material module, a water circulation system and a monitor, wherein the multi-hole hydrophilic material module comprises multi-hole hydrophilic materials, a water spraying disk, a water collecting disk, a water spray nozzle, a metal plate connection plate or a soft connection plate and a temperature-humidity sensor; the water circulation system comprises a water tank, a pump group, a spraying water supply pipe, a water supply pipe of the water tank, a return water pipe, a draining pipe, a magnetic valve of the spraying water supply pipe, a ball valve of the water supply pipe of the water tank, a magnetic valve of the draining pipe and a float switch; the water circulation system is used for providing circulation water source for the multi-hole hydrophilic material module; the multi-hole hydrophilic material module is used for providing water screens of a wind inlet side of the outdoor machine; and the temperature-humidity sensor, the magnetic valve of the spraying water supply pipe, the magnetic valve of the spraying water supply pipe, the magnetic valve of the draining pipe and the pump group are correspondingly connected with the monitor. The latent heat energy saving device is capable of effectively reducing the air inlet temperature of the outdoor machine of the air conditioning unit after being connected with the outdoor machine, accordingly the operation efficiency of an air conditioner is reduced, electric power is saved, and 18 to 36 % power is saved.

A semiconductor device comprises a sense amplifier circuit amplifying a signal transmitted through the bit line, first/second data lines transmitting the signal amplified by the sense amplifier circuit, a read amplifier circuit driven by a first voltage and amplifying the signal; first/second switch circuits controlling connection between the above components, first/second voltage setting circuits setting the second/third data lines to a second voltage lower than the first voltage. A predetermined voltage obtained by adding the second voltage to a threshold voltage of a transistor in the second/third switch circuit is applied to the gate terminal thereof, and ends of the data lines are connected to the source and drain terminals thereof.

The invention discloses an erasing and writing method of a phase change memory. The erasing operation is realized in a way that: applying a small-pulse-height pulse on a phase change material in the device, wherein the pulse enables the phase change material to right achieve the fusion temperature and partially form amorphous areas in the phase change material; and continuing to applying a plurality of small-pulse-height pulses, and accumulating amorphous areas in the phase change material until the device is transferred from low impedance state to high impedance state. The invention realizes the erasing and writing operations by utilizing the accumulating function; on one hand, low heat produced by the small pulse height is beneficial for stability of the material, and on the other hand, the small pulse height can ensure the application of the phase change memory in the environment requiring low programming current (voltage), thereby reducing the energy consumption of the device and greatly saving the cost for optimizing the device structure under the condition of no change of the device structure of the phase change memory.

The invention provides a bimetal composite type abrasion-resistant liner plate and a manufacturing method, and relates to the technical field of instruments. The key technology of 'bimetal composite' is adopted, one face of a middle steel plate of the bimetal composite type abrasion-resistant liner plate is connected with a high-chromium iron casting containing a metamorphic complex agent in a casting mode, and the other face of the middle steel plate of the bimetal composite type abrasion-resistant liner plate is connected with a carbon steel casting in a casting mode. The manufacturing method for the bimetal composite type abrasion-resistant liner plate comprises the steps that 1, a high-chromium iron casting model in a liner plate casting model is casted through high-chromium cast iron molten lava containing the metamorphic complex agent, a carbon steel casting model in the liner plate casting model is casted through carbon steel molten lava at the same time, and manufactured rough casting bodies are combined into a casting; 2, the casting is made into a quenching casting through air cooling and quenching; and 3, the quenching casting is made into the bimetal composite type abrasion-resistant liner plate through tempering. The bimetal composite type abrasion-resistant liner plate is applied to a ball mill and is skillful in structure, simple in manufacturing method, stable and reliable in effect, easy to manufacture and low in cost.

The invention relates to a phase change storage device based on an antimony telluride composite phase change material and a preparation method thereof, belonging to the field of computer technology. The device comprises a substrate, a lower electrode, a heat generation electrode layer, an insulating layer, a phase change material layer and an upper electrode, wherein the phase change material layer is a composite phase change material layer containing antimony telluride and silicon nitride; the atom percent content range of the silicon nitride is 0.5-30; and the proportional range of Sb atoms and Te atoms in the phase change material layer is 80/20-30/70. The composite phase change material layer which has high crystallization velocity and higher heat generation efficiency is used by the phase change storage device of the invention, thus the operation velocity of the phase change storage device can be improved, and the RESET operation current of the phase change storage device can be lowered.

The invention discloses a power detection circuit for a switching power supply, and the circuit is disposed on a power line. The power line is provided with at least one current sampling resistor. The circuit comprises a current detection circuit which is provided with a current sampling end and a current output end in parallel connection with the current sampling resistor and is used for detecting the value of a current in the power line; a voltage detection circuit which is provided with a voltage sampling end and a voltage output end, which are in connection with a positive electrode and a negative electrode, and is used for detecting the value of a voltage in the power line; and a multiplying circuit which is connected with the current output end and the voltage output end, enables the detected current and voltage to be multiplied, and outputs the power value. The current detection circuit comprises a first current-limiting resistor, a decoupling capacitor, an optical coupled isolator and a first differential amplification circuit, wherein the first current-limiting resistor, the decoupling capacitor, the optical coupled isolator and the first differential amplification circuit are connected sequentially. The voltage detection circuit comprises a second differential amplification circuit. The voltage measurement value and the current measurement value are multiplied through the multiplying circuit, thereby obtaining the power. The whole power detection circuit is precise in voltage detection, is small in operation current, and is low in cost.

A phase change storage technology is a new generation of storage technology with excellent performance, the technical node limitation is avoided, when the size is smaller, the performance is more excellent, the speed is higher, and the power consumption is lower. The invention provides a phase change memory device unit, which consists of a field effect tube and a variable-resistant element based on a chalcogenide compound material, wherein an MoS2 field effect tube is used as a gate tube, and the chalcogenide compound variable-resistant element realizes the information storage. The MoS2 is a ultra-thin two-dimensional chalcogenide compound semiconductor material, the MoS2 field effect tube has smaller size and lower energy consumption than the conventional silicon field effect tube, the power consumption is only hundred thousandth of that of the silicon material according to reports in the prior art, the room temperature migration rate reaches 200 cm<2>/Vs, and the room temperature current switch ratio reaches 108. The MoS2 field effect tube and the chalcogenide compound variable-resistant element are combined for forming a phase change memory device unit, and the low-power-consumption high-speed and high-density phase change memory can be realized.

The invention discloses an asymmetric annular microelectrode phase change storage unit and device. The asymmetric annular microelectrode phase change storage unit comprises a lower electrode layer, a first insulating layer, a phase change function layer, a second insulating layer, and an upper electrode layer from bottom to top, the first insulating layer is provided with a small hole, a metal annular sidewall and an insulating core are arranged in the small hole, the phase change function layer is contacted with a lower electrode through the metal annular sidewall in the small hole of the first insulating layer, the second insulating layer is also provided with a small hole, and an upper electrode is contacted with the phase change function layer through the small hole of the second insulating layer. The asymmetric annular microelectrode phase change storage unit is characterized in that the lower electrode is an annular electrode, an electrode core is filled with an insulating material, and the center line of the small hole of the first insulating layer, the center line of the phase change function layer, and the center line of the small hole of the second insulating layer are all not in the same straight line. According to the asymmetric annular microelectrode phase change storage unit and device, the contact area of the lower electrode and the phase change material is greatly reduced, the operation current is reduced, the thermal property is good, the original property of the device can be maintained, the power consumption is reduced, and the thermal crosstalk is reduced.

The invention relates to a magnetic rotating arc plasma generator, and belongs to the technical field of plasma generators. The magnetic rotating arc plasma generator comprises a cathode, a magnetic rotating arc anode, a rotational flow ring and an anode water channel, and is characterized in that the cathode and the magnetic rotating arc anode are arranged in a coaxial manner; the magnetic rotating arc anode comprises an arc starting anode, a transition anode and a main anode, the transition anode comprises a conducting section and an insulating section, and the main anode comprises an electromagnetic coil and a main anode body. The magnetic rotating arc anode is in the shape of a special-shaped circular tube on the whole, one end of the magnetic rotating arc anode is in the shape of a bell mouth, and the middle of the magnetic rotating arc anode is provided with a through hole. The air flow generates a rotational flow through the rotational flow ring, the electromagnetic coil generates an electromagnetic field, the rotational flow and the electromagnetic field compress the arc together and drive the arc to rotate, thereby enabling the root of the arc to rotate with a high speed on the main anode. The magnetic rotating arc plasma generator has the advantages of high arc voltage, low operating current, high electric-thermal conversion efficiency, small electrode ablation amount, small fluctuation range of arc voltage, wide power adjustment range, low operation cost, good disassembly and assembly characteristic, high practicability and the like.

Provided is an oscillating motor and electric clippers. The oscillating motor includes a U-shaped magnetic yoke, four permanent magnets and a swing arm. The U-shaped magnetic yoke causes end faces of two support legs to produce alternating magnetic poles with the control circuit. The four permanent magnets are fixedly mounted to an inner arm via a second magnetic yoke. The four permanent magnets are sequentially distributed on a same circumferential surface having a fulcrum being a circle centre. The polarities of radial end faces of the first permanent magnet and the fourth permanent magnet are the same. The polarities of radial end faces of the second permanent magnet and the third permanent magnet are the same, and the opposite of the polarity of the radial end face of the first permanent magnet. When a coil is electrified, the four permanent magnets produce torque having the same direction of rotation.

The non-volatile memory includes transistor and capacitance structure embedded in substrate of semiconductor. The transistor includes first electric gate electrode, first dielectric layer, and first ion adulteration area. The capacitance structure includes second electric gate electrode, second dielectric layer, and second ion adulteration area. The first electric gate electrode and the second electric gate electrode are connected each other in electrically to form single suspended jointed gate electrode of memory cell. Using reversal bias, the memory cell can carry out writing, erasing, and reading operations. When operation on insulated trap area, applying positive, negative voltages to drain electrode, gate electrode and silicon substrate or trap area, the method generates inverse layer to reduce absolute voltage and area of boost up circuit so as to lower current consumption.

The invention discloses a continuous casting permanent magnet spiral magnetic field stirrer which comprises a steel cylinder, magnetic steel, a stator iron core and a shell. The continuous casting permanent magnet spiral magnetic field stirrer is characterized in that the shell is of a topless bottomless tubbish structure; the steel cylinder is of a topless bottomless tubbish structure; the steelcylinder is sleeved by the shell in a concentric manner; the stator iron core is fixed on the inner wall of the shell; a coil is embedded into the stator iron core to form a stator winding; the magnetic steel is fixed on the outer wall of the steel cylinder in a manner of surrounding the steel cylinder to form a rotor magnetic pole; two pieces of magnetic steel arranged in a spiral line are fixedon the inner wall of the steel cylinder; the two pieces of magnetic steel arranged in the spiral line mutually form an angle of 180 degrees in symmetry with the steel cylinder as a center; an includedangle of 40 degrees is formed by a head block and a tail block of each piece of magnetic steel to form an internal spiral magnetic field; and both ends of the stator iron core are assembled inside the shell through bearings. The stirrer is small in size, light in weight, simple in transmission, flexible to control, stable in performance, low in energy consumption, good in practicability and easyto popularize.