53results about How to "Achieve reversible transformation" patented technology

The invention is concerned with the phase change film material containing silicon series cluster subject, that is the silicon group subject alloy TeaSibSb100-(a+b) with the a no lesser than 48 but no more than 60, and the b no less than 8 but no more than 40. The invention has the higher crystalline state resistance and non/crystalline resistance change ratio compare to the Ge2Sb2Te5 phase change film, the lower change ratio of the non/crystalline film thickness and melting point. The memorizer including the Si series sulfur group subject phase change film is with the higher ratio sum of the switch stability and it helps the writing operation current.

The invention discloses a preparation method of a photo-responsive linear azobenzene polyoxyethylene ether nonionic surfactant, belonging to the technical fields of textile and chemical industry. The azobenzene polyoxyethylene ether nonionic surfactant is synthesized from 4-hydroxyazobenzene and polyethylene glycol. The azobenzene polyoxyethylene ether nonionic surfactant can be subjected to reversible heterogeneous treatment from an anti-form to a cis-form under the irradiation of ultraviolet light and visible light, and the tightness of the azobenzene polyoxyethylene ether nonionic surfactant arrayed on the surface of a foam liquid membrane is changed through steric hindrance, so that the effects of low concentration and high foam stabilizing property are achieved. The azobenzene polyoxyethylene ether nonionic surfactant can be used as a wetting permeating agent, a detergent and a low-concentration surfactant, so that the demand contradiction that foam has different stabilities before and after being dyed and finished is solved, the utilization rate of the foam can be increased, the foam can be effectively recycled, the pollution is alleviated, and the wasting of a chemical reagent is reduced.

The invention relates to a phase change storage device based on an antimony telluride composite phase change material and a preparation method thereof, belonging to the field of computer technology. The device comprises a substrate, a lower electrode, a heat generation electrode layer, an insulating layer, a phase change material layer and an upper electrode, wherein the phase change material layer is a composite phase change material layer containing antimony telluride and silicon nitride; the atom percent content range of the silicon nitride is 0.5-30; and the proportional range of Sb atoms and Te atoms in the phase change material layer is 80/20-30/70. The composite phase change material layer which has high crystallization velocity and higher heat generation efficiency is used by the phase change storage device of the invention, thus the operation velocity of the phase change storage device can be improved, and the RESET operation current of the phase change storage device can be lowered.

The disclosed materials include three types: (1) alloy firm of TeaSibSbl00-(a+b); (2) firm of (TeaGebSb l00-(a+b) )c Si1oo-c formed from Ge-Sb-Te alloy with Si being doped into; (3) alloy firm of TeaSicGe(b-c)Sb l00-(a+b) obtained by using Si to partially replace Ge in Ge-Sb-Te alloy. Comparing common Ge2Sb2Te5 film of phase change, the invention possesses higher resistance of crystalline state, higher rate of change of amorphous state / crystalline state, lower rate of change of film thickness of amorphous state / crystalline state, and lower melting point. These characters make storage devices of film of phase change containing chalcogenide in Si group possess higher rate of on/off and stability of device. The invention makes for lowering operation current for writing storage devices as well as for realizing storage in multiple values in higher density.

The invention relates to the technical field of functional materials and devices, in particular to a multimode electrochromic device and a preparation method thereof. According to the preparation method of the multimode electrochromic device, dipping lifting is adopted so that a metallic oxide nano-particle film can be formed on a conducting surface of a transparent conducting substrate more uniformly and reversible transition among a mirror surface state, a transparent state and a black state of the electrochromic device can be realized, and controllability is high. The multimode electrochromic device is prepared through the preparation method. The multimode electrochromic device and the preparation method thereof have the advantages that reversible transition among the mirror surface state, the transparent state and the black state can be realized, and controllability is high.

The invention belongs to the technical field of thermoplastic polyurethane elastomers, and particularly relates to a photochromic thermoplastic polyurethane elastomer material for a waterproof and moisture-permeable film, and a preparation method thereof. The material is prepared from, by weight, 55-65 parts of polymer diol, 25-35 parts of diisocyanate, 7-12 parts of a chain extender, 0.01-0.03 part of a catalyst, 0.1-2 part of a photosensitive auxiliary agent, and 1-10 parts of a functional filler. The photochromic thermoplastic polyurethane elastomer material for the waterproof and moisture-permeable film has excellent mechanical properties, the waterproof and moisture-permeable rate of the prepared film is greater than 10000 g/m<2>/24h, the hydrostatic pressure resistance of the prepared film is greater than 10000 mmH2O, the film can be changed from colorless to colored under the irradiation of ultraviolet rays with certain wavelength, and then the film is changed from colored to colorless after being irradiated by visible light. The material can be used as a functional film material in the fields of clothing, shoe material bags and suitcases and the like, and has wide application prospects.

The invention discloses a cobalt coordination polymer with reversible monocrystal-monocrystal transformation behavior. The chemical formula of the cobalt coordination polymer is [Co1.5(tipb)(SO4)(acid)0.5](solvent), wherein tipb is ligand 1,3,5-tri(p-imidazole phenyl) benzene, acid is diacid, solvent refers to a solvent, and the preparation method comprises the following steps: adding the ligand, diacids and cobaltous sulfate in the anhydrous solvent, adding pyridine to adjust the pH value to alkalescence, obtaining bulk blue monocrystal through the solvothermal reaction, naturally cooling, washing and drying, wherein the blue monocrystal can be transformed into the cobalt coordination polymer red monocrystal under the action of water or ammonia. The cobalt coordination polymer disclosed by the invention has the advantages that the micropore cobalt coordination polymer material can be used for realizing the reversible transformation from one crystal to another crystal with the change of crystal color, aperture, dielectric and topological structure; and the material has potential application value in the material field such as sensing and absorption separation.

The invention relates to a two-layer phase change material, a phase change memory cell and a preparation method thereof. Sb-Te/Sb-Te or Ge-Te/Sb-Te; Where the general chemical formula of Sb-Te is SbxTe100-X, satisfies 20<x<80. The structure of the phase change memory cell comprises a lower electrode layer, an upper electrode layer and a phase change material layer positioned between the lower electrode layer and the upper electrode layer, wherein the phase change material layer is a two-layer phase change material Ge-Sb-Te/Sb-Te or Ge-Te/Sb-Te. When double-layer phase change material is used as the storage medium of phase change memory, phase change memory cell not only has the advantages of fast phase change speed and low write operation current, but also improves the reliability of the device.

The invention belongs to a phase change material and a preparation method therefor in the field of micro-electronics, and particularly relates to an Al/Ge10Sb90 type superlattice phase change thin film material used for a phase change memory and a preparation method. The Al/Ge10Sb90 type superlattice phase change thin film material used for the phase change memory adopts a multi-layer composite film structure, and is formed by an Al layer and a Ge10Sb90 type in an alternate deposition manner; and the Al layer and the Ge10Sb90 type are used as one alternate period, and the Al layer in the nextalternate period is deposited above the Ge10Sb90 type of the former alternate period. The Al/Ge10Sb90 type superlattice phase change thin film material used for the phase change memory adopted in theinvention is a novel phase change material, has high thermal stability and also has the advantages of high speed and low power consumption.

The invention discloses a method for preparing GO (graphene oxide) gel with multiple stimulus responses. The method comprises the step of preparing a polymer containing a ketonic carbonyl group or an aldehyde group and a thermo-sensitive type structural unit, wherein the polymer can be prepared into the GO gel with the stimulus responses through the action between the ketonic carbonyl group or the aldehyde group and hydrazide-bonding functionalized GO. The GO gel can reversibly realize conversion between sol and gel and volumetric shrinkage-expansion change under multiple stimulations of pH, temperature and NIR (Near Infrared Ray). The GO gel with the multiple stimulus responses has great potential application value in the fields of bio-sensing, controlled drug release and the like.

The invention relates to a material in the field of microelectronic technology, and more particularly to a Ge-Cu-Te nano phase change thin film material for a high stability phase change random access memory and a preparation method thereof. The Ge-Cu-Te nano phase change thin film material has an atomic percent composition of GexCu100-2xTex. The Ge-Cu-Te nano phase change thin film material is prepared by depositing a composite target material composed of a GeTe target and a circular pure Cu chip by a high vacuum magnetron sputtering method. The nano phase change thin film material of the invention has high crystallization temperature, which can greatly improve the amorphous thermal stability of the PCRAM; and has high crystal resistance, which can reduce the power consumption of PCRAM.

The invention provides a preparation method and application of photoresponse organogel capable of being used at 80 DEG C. The preparation method of the photoresponse gel without adding a cross-linking agent comprises the following steps: heating a ruthenium-containing monomer and a benzonitrile-containing monomer in 1, 2-propylene glycol for reaction to obtain an initial mixed solution; mixing a comonomer, an initiator and 1, 2-propylene glycol and then mixing the mixture with the initial mixed solution to obtain a prepolymer solution; and heating and polymerizing the prepolymer solution in a dark place to obtain the photoresponse gel without an additional cross-linking agent. The invention further provides a preparation method of the photoresponse gel with an additional cross-linking agent. According to the invention, reversible conversion of gel-sol can be realized through switching of illumination and dark heating conditions, and the photoresponse gel is used for material remodeling. Meanwhile, based on the color difference of a photoresponse unit during ligand coordination and dissociation, the gel prepared by additionally adding a cross-linking agent can realize reversible writing and erasing of different patterns through control of illumination and dark heating conditions, and is expected to be used for information storage and anti-counterfeiting.

The invention is concerned with a kind of phase change film material with chalcogenide in silicon series for phase change storage, belonging to micro-electronics technology field. Si element takes place of Ge element of TeaGebSb100-(a+b) alloy to form TeaGeb-cSicSb100-(a+b) alloy film, and a is from 48 to 60, b is from 8 to 40, the replace scalar c of Si is from 1 to 40 atom percent. This invention has higher crystal resistance than common Ge2Sb2Te5 phase change film, and more higher amorphous/crystalline state change ratio of resistance and more lower amorphous/crystalline state film thickness change ratio and lower melting point. This kind of storage has more higher open/close ratio and stability of piece to reduce writing current of storage and get storage multi-value with higher density.

The invention provides a positive electrode material of a lithium ion battery, a preparation method and application of the positive electrode material and the battery. The positive electrode materialincludes positive electrode particles containing a lithium oxide, the positive electrode particles having a crystallized LiMxOy compound and a quasi-crystallized M element oxide in contact with each other, 0 <x <= 2, 0 < y <= 4, and M includes at least one of Mn, Al, Nb, Fe, Co, and Ni. The lithium ion battery using the positive electrode material can have considerable battery capacity and performance, and the positive electrode material can be applied to an aqueous electrolyte, so that the safety performance of the battery using the positive electrode material can be improved.

The invention discloses a preparation method of a self-assembled model. The method comprises the following steps: providing an organic photoisomerization molecular solution, the organic photoisomerization catalyst comprising a solvent and organic photoisomerization molecules dissolved in the solvent, wherein the organic photoisomerization molecules can be converted into a first structure under theirradiation of ultraviolet light in a first wavelength range and can be converted into a second structure under the irradiation of visible light in a second wavelength range, and the organic photoisomerization molecules having different friction coefficients when being located in the first structure and the second structure respectively; dropwise adding the organic photoisomerization molecular solution to the surface of a highly-oriented pyrolytic graphite substrate; and standing until the solvent in the organic photoisomerization molecular solution is volatilized, so that the organic photoisomerization molecular solution is self-assembled on the highly-oriented pyrolytic graphite substrate to form a self-assembled film. The invention further discloses a self-assembly model. The inventionfurther discloses a self-assembly method of the film with the friction coefficient capable of being adjusted and controlled through light.