The invention relates to a method for constructing an In2S3
impurity band
semiconductor. An In2S3
semiconductor serves as an index compound, a
Ge element is adopted for
doping the In position of the In2S3
semiconductor, and the In2S3
impurity band semiconductor is obtained. Compared with the prior art, according to the In2S3
impurity band semiconductor, In2S3 with the excellent performance is adopted as a substrate material, the VI
group element Ge is adopted for
doping the In positon of the In2S3 semiconductor, thus a strip of an impurity band is introduced in an index
band gap, the electrontransition path is increased, the absorption spectrum is broadened, optical absorption of raw materials is enhanced, thus the In2S3 semiconductor can be directly used as a
solar cell adsorption material, and practical significance is achieved for development of
solar energy sources; the theoretical calculated absorption spectrum of the In2S3 and Ge doped In2S3 shows that an intrinsic semiconductorhas only one absorbing edge, after the Ge is doped, a novel absorbing edge occurs, and an absorbing curve starts being enhanced significantly in the energy area lower than the
band gap. According tothe Ge doped In2S3 semiconductor material, the preparation method is simple, and industrial large-scale production can be achieved.