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143results about How to "Improve photosensitivity" patented technology

Method for preparing negative photosensitive polyimide based on 2,2-di[4-(2,4-diaminophenyloxy)phenyl]hexafluoropropane

The invention discloses a method for preparing negative photosensitive polyimide which is based on 2, 2-bis<4-(2, 4-diaminophenoxy) phenyl> hexafluoropropane. The method takes the 2,2-bis<4-(2,4-diaminophenoxy)phenyl> hexafluoropropane and dihydric acid anhydride as raw materials for carrying out the polymerization reaction, hyper-branched fluoride-containing polyamic acid which takes the macromolecular chain end group as the anhydride group is obtained, the hyper-branched fluoride-containing polyamic acid is further reacted with p-hydroxyaniline or m-hydroxyaniline, hyper-branched fluoride-containing polyimide which takes phenolic hydroxyl as the end group by chemical imidization reaction is obtained, phenolic hydroxyl end-blocked fluoride-containing hyper-branched polyimide powder is obtained by precipitation, washing and vacuum drying process, and the hyper-branched fluoride-containing polyimide photosensitive material with the negative photosensitive performance is obtained by undergoing the functionalization after the dissolution. The material has high photosensitive performance, high resolution and excellent process, and the cured product has low water absorption, excellent heat resistance, dielectric performance and mechanical performance, thus having great application prospect in the field of electronic micro-electronics.
Owner:DONGHUA UNIV +1

Method for manufacturing semiconductor device

The invention discloses a method for manufacturing a semiconductor device. The method comprises the following steps of: providing a semiconductor substrate, wherein a protrusion structure is arranged on the semiconductor substrate; depositing a first dielectric layer and an etching barrier layer on the semiconductor substrate in turn by adopting a deposition process, wherein upper surfaces of theetching barrier layer and the first dielectric layer at corresponding positions of the protrusion structure are higher than those at other positions; forming second dielectric layers with the same upper surface at different positions on the etching barrier layer by adopting a spin-coating process; etching the second dielectric layer to expose the highest point of the etching barrier layer by adopting a first etching process; and etching the second dielectric layer, the etching barrier layer and the first dielectric layer by adopting a second etching process until the etching barrier layer is completely removed. In the method, the thicknesses of the residual first dielectric layer at different positions on the whole wafer are the same, and the thickness of the first dielectric layer can bereduced. Therefore, the aim of improving the photosensitivity of the semiconductor device is fulfilled.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Novel n type semi-insulating GaAs ohmic contact electrode material and method for preparing novel n type semi-insulating GaAs ohmic contact electrode material

The invention provides a novel n type semi-insulating GaAs ohmic contact electrode material and a method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material. According to the method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material, an undoped n type semi-insulating GaAs substrate is adopted to serve as an electrode bottom layer, two electrode areas on the substrate are plated with Co-doped amorphous carbon (a-C) films with the pulsed laser deposition method, the amorphous carbon films are plated with Ag with the vacuum heat evaporation method, and then the novel n type semi-insulating GaAs ohmic contact electrode material is obtained. According to various data detection results, the novel n type semi-insulating GaAs ohmic contact electrode material has the advantages that the I-V curve of an electrode has good linear relation and symmetric relation, all performance indexes meet requirements of stable contact electrodes, the luminous sensitivity is high, and the material can be successfully applied to devices relevant to n type semi-insulating GaAs; compared with a preparing technology in the prior art, the method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material has the advantages that the processes are simple, cost is low, and the economic benefit is good.
Owner:HUAIYIN TEACHERS COLLEGE
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