147results about How to "Improve photosensitivity" patented technology

The invention relates to an imaging method which uses a black white camera to shoot color images and a device, the saturation regulatory factor value range is: 0.5-3; the luminance gain value range is: 0.5-3, under the condition is still relative to a camera in the environment without influence of external light or with influence of external light and during the shooting object is in a shot course of synthesizing color images, through a light source luminous intensity adjusting circuit, the luminance of a red LED lamp annular light source group, a green LED lamp annular light source group, a blue LED lamp annular light source group can be adjusted independently to adjust white balance; during shooting, each group of light source can be opened or closed independently through a light source luminescence sequencing circuit; when the light source is prepared, the camera is triggered to shoot images through a control circuit. By adopting the method and the structure, an imaging method and a device which use a black white camera to shoot color images with real color, without light filter, high lminous sensitivity for satisfying tip application are provided.

A photoelectric conversion circuit has: a photoelectric conversion element that produces a detection current commensurate with the amount of light received thereby; a capacitor having one end connected to one end of the photoelectric conversion element, the one end of the capacitor from which a terminal voltage commensurate with the integral of the detection current is drawn; and an amplifier that receives the terminal voltage of the capacitor and produces an amplified signal commensurate with the terminal voltage thus received. The photoelectric conversion circuit outputs a final optical signal (an output current) by using the amplified signal of the amplifier. As a current path that can serve as a charging / discharging path of the capacitor, the photoelectric conversion circuit includes only a current path along which the photoelectric conversion element is located. With this configuration, it is possible to enhance responsivity to light and improve the S / N ratio of a received optical signal by making the most of electric power obtained from a photoelectric conversion element.

The conventional avalanche photodiodes are not easy to be fabricated, because if the light absorption layer is in un-doped type, the bias voltage during operation is high, and if the light absorption layer is only slightly doped, the doping amount thereof is hard to be controlled. To this end, the invention provides an avalanche photodiode comprises: a substrate of a first conductivity type; and an avalanche multiplication layer, a light absorption layer, and a window layer which are sequentially laminated from the substrate, wherein a part of the window layer is a region of a second conductivity type, and the light absorption layer includes a first light absorption layer, and a second light absorption layer which has higher electric conductivity than electric conductivity of the first light absorption layer.

A method of manufacturing a touch control display device includes the following steps: forming a sensing element on a substrate, and forming a sensing signal line electrically connected with the sensing element; the step of forming the sensing element includes: forming a semiconductor layer on the substrate, the semiconductor layer including a semiconductor pattern of the sensing element; forming a gate insulating layer on the semiconductor layer; forming a first conductor layer on the gate insulating layer; forming an interlaye insulating layer on the gate insulating layer; performing a tempering process; after the tempering process, removing the interlayer insulating layer in a gate predetermined region; removing the first conductor layer in the gate predetermined region; forming a gate in the gate predetermined region; and forming a second conductor layer, wherein the second conductor layer includes a source electrode and a drain electrode of the sensing element that are electrically connected with the semiconductor pattern of the sensing element.

A display device provided with a signal transmitting mechanism, which has reduced number of pins of an FPC substrate to be connected with a TFT substrate or eliminates such pins and is easily applicable even to a small device. The display device is provided with a light receiving element (90) formed on the TFT substrate of a liquid crystal panel (2), a receiving circuit (100), a display control circuit (200), a video signal line drive circuit (300), a scanning signal line drive circuit (400), a display section (500), and white LEDs (40a-40c) and a LED drive circuit (51) included in a backlight section (3). The LED drive circuit (51) drives a white LED (40) which emits light by an optical (modulation) signal (LS) corresponding to a video signal (VS) given from the external of the device. The receiving circuit (100) generates (demodulates) the video signal (VS) from the signal received through the light receiving element (90).

The invention provides a novel n type semi-insulating GaAs ohmic contact electrode material and a method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material. According to the method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material, an undoped n type semi-insulating GaAs substrate is adopted to serve as an electrode bottom layer, two electrode areas on the substrate are plated with Co-doped amorphous carbon (a-C) films with the pulsed laser deposition method, the amorphous carbon films are plated with Ag with the vacuum heat evaporation method, and then the novel n type semi-insulating GaAs ohmic contact electrode material is obtained. According to various data detection results, the novel n type semi-insulating GaAs ohmic contact electrode material has the advantages that the I-V curve of an electrode has good linear relation and symmetric relation, all performance indexes meet requirements of stable contact electrodes, the luminous sensitivity is high, and the material can be successfully applied to devices relevant to n type semi-insulating GaAs; compared with a preparing technology in the prior art, the method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material has the advantages that the processes are simple, cost is low, and the economic benefit is good.