Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photo-sensitive polyimide, and its preparing method

A polyimide and photosensitive technology, applied in the field of photoresist preparation, can solve the problems of affecting graphic resolution, low photosensitivity, limiting applications, etc., and achieve the effects of increased photosensitivity, high sensitivity, and high film retention rate

Inactive Publication Date: 2006-10-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ester-type and ionic-type PSPI will remove a large number of molecules in the subsequent imidization process, resulting in a low film retention rate, which greatly affects the resolution of the graphics and greatly limits their application; self-sensitizing PSPI Although it overcomes the problem of film retention rate, it still has the disadvantage of low photosensitivity [M.K.Ghosh & K.L.Mittal Ed.Polymides, Marcel Dekker, 1996]

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photo-sensitive polyimide, and its preparing method
  • Photo-sensitive polyimide, and its preparing method
  • Photo-sensitive polyimide, and its preparing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] Add 6 mL of N,N-dimethylacetamide and 2.0 mmol of photosensitive diamine containing alkyl group and photosensitive acryloyl group in equimolar ratio to a 50 mL three-necked flask with nitrogen inlet. Diamine was made into a solution, and an equimolar amount of 3,3',4,4'-benzophenonetetracarboxylic dianhydride solution dissolved in 6mL of N,N-dimethylacetamide was slowly added dropwise, protected by nitrogen gas, The reaction was carried out at 70°C for 8 hours; then, 3 mL of a mixture of acetic anhydride and pyridine in an equimolar ratio was added, and the reaction was maintained at 70°C for 5 hours to obtain a viscous glue. Precipitate into 100 mL of ethanol, filter and wash with ethanol for 5 times, and vacuum-dry at 70° C. for 8 h to obtain 1.05 g of the target product.

[0048] For the photosensitive polyimide material prepared in the above embodiment, after testing: the sensitivity is 80-135mJ / cm 2 , The film retention rate is 80% to 90%, and the highest decompos...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to photosensitive polyimide (PSPI) and the manufacture method. It adopts photosensitivity diamine containing alkyl, alkoxyl or methylthio on consecutive position of benzene ring and photosensitivity diamine containing acryloyl, dropping tetracarboxylic acid bianhydride organic solution into photosensitivity diamine mixture solution to take polymerization, and taking chemical imine to gain PSPI. The polymer has high photosensitivity and high resolution, excellent thermal stability and dissolubility.

Description

technical field [0001] A photosensitive polyimide and a preparation method thereof belong to photosensitive heat-resistant polymer functional materials in the field of material technology and can be used for preparing photoresists. Background technique [0002] Polyimide photoresist is a high-performance photosensitive resin developed in the past 30 years. It has excellent thermal stability, good mechanical, electrical, chemical and photosensitive properties and other high-performance new materials. The ability to engrave into fine patterns and the characteristics of greatly simplifying the entire complex microfabrication process when used as a film pattern are widely used in radiation shielding layer materials, insulating layer materials, buffer layer materials, flat layer materials , liquid crystal alignment layer materials, nonlinear optical materials, optical waveguide materials, ion implantation masks, high temperature resistant gas-liquid separation membranes, flexible...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10G03F7/004
Inventor 刘颖力张怀武李元勋杨青慧
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com