The invention provides a method for producing 
solar energy level polysilicon by taking 
quartz sands with high purity as materials. In the method, silica materials, in which the SiO2 content is more than 99 percent, are chosen to undergo water 
quenching, crushing, sieving, acid cleaning, 
magnetic separation and 
high voltage ionizing treatments, which makes the purity of silica particles reach more than 99.99 percent, and the 
quartz sands with high purity are obtained; carbonaceous reducing agents and 
graphite electrodes in a mine hot stove are chloridized at a high temperature in a chlorination furnace, making the purity of carbonaceous reducing agents reach more than 99.99 percent; in the mine hot stove, the carbonaceous reducing agents are used to reduce the 
quartz sands with high purity so as to produce 
silicon, and while producing, 
silicon liquids are periodically discharged from the mine hot stove; the obtained 
silicon liquids are injected in a holding furnace, and the products directly undergo the high-frequency 
plasma air refining for 
impurity removal under the non oxidizing 
atmosphere, and at the same time oxidizing gases are added in the melting silicon; the silicon liquids are injected in a 
directional solidification furnace for the 
directional solidification, and the silicon is further purified, so that the 
solar energy level polysilicon is obtained. The method of the invention has the advantages of low investment, short building period, low manufacturing cost, simple process and no 
pollution; moreover, the method is also suitable for industrialization.