Methods for forming doped
silane and / or
semiconductor thin films, doped
liquid phase silane compositions useful in such methods, and doped
semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a
dopant source. By irradiating a doped liquid
silane during at least part of its deposition, a thin, substantially uniform doped oligomerized / polymerized silane film may be formed on a substrate. Such
irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high
viscosity and relatively low volatility, typically by cross-linking,
isomerization, oligomerization and / or
polymerization. A film formed by the
irradiation of doped liquid
silanes can later be converted (generally by heating and annealing / recrystallization) into a doped, hydrogenated,
amorphous silicon film or a doped, at least partially
polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high
throughput, low cost equipment and techniques for making doped
semiconductor films of commercial quality and quantity from doped “
liquid silicon.”