113 results about "Microfabrication" patented technology

A reconfigurable intelligent surface. The reconfigurable intelligent surface comprises a three-layer structure, comprising an artificial microstructure array capable of reflection and transmission within a specific frequency band range. By applying an external voltage to control the on / off of a semiconductor switch, an original phase shift structure is changed, ultimately achieving phase control of reflection and transmission. In addition, the structure is simple, can be realized by a microfabrication means, involves a mature process, and is easy to implement in high-frequency bands such as millimeter-wave and terahertz bands.

The invention provides a preparation method of an HDMI (High Definition Multimedia Interface) high-performance common-mode suppressor made of a nanocrystalline material, relates to the technical field of electronic component preparation, and aims to meet the harsh requirement of HDMI high-frequency high-speed signals on common-mode noise suppression, the method comprises the following steps: constructing a multi-layer heterogeneous magnetic film with a gradient interface on a microstructured substrate by utilizing multi-target magnetron sputtering; a selective energy field assisted annealing technology is adopted to realize precise nanocrystallization and magnetic anisotropy regulation and control of the magnetic film; and a high-precision three-dimensional coil structure is integrated by combining a micromachining process. The prepared common-mode suppressor is small in size and high in integration level, shows excellent common-mode suppression efficiency, wide working bandwidth and excellent signal integrity in a high-frequency band, has high reliability, and is suitable for a new generation of HDMI (High-Definition Multimedia Interface).

A method of microfabrication is provided. A substrate having a working surface and having a backside surface opposite to the working surface is received. The substrate has an initial wafer bow resulting from one or more micro fabrication processing steps executed on the working surface of the substrate. The initial wafer bow of the substrate is measured and the initial wafer bow is used to generate an initial wafer bow value that identifies a degree of first order wafer bowing of the substrate. A correction film recipe based on the initial wafer bow value is identified. The correction film recipe specifies parameters of a correction film to be deposited on the backside surface of the substrate to change wafer bow of the substrate from the initial wafer bow to a modified wafer bow. The correction film on the backside surface of the substrate according to the correction film recipe is deposited. The correction film physically modifies internal stresses on the substrate and causes the substrate to have a modified bow with the predetermined wafer bow value.

The invention belongs to the field of semiconductor processes and devices, and particularly relates to a method for preventing photoresist denaturation in the process of etching graphene by oxygen plasma based on an isolating layer. The method comprises the following steps: transferring graphene to a substrate through a mechanical stripping and transferring technology; exposing the two ends of the graphene in the environment through photoetching, and evaporating Se serving as an isolating layer onto the developed graphene pattern; covering photoresist to protect Se from being influenced by subsequent etching, and performing photoetching to form a graphene channel; processing the graphene substrate covered by the photoresist by adopting oxygen plasma, and etching a graphene channel; and annealing to remove Se. The method is suitable for manufacturing semiconductor devices, and has wide application prospects in the fields of micromachining, patterning and functionalization treatment of graphene-based materials. The method can be used for preparation processes of graphene integrated circuits, graphene sensors, photoelectric devices and other microelectronic devices, and especially has a promotion effect on high-precision graphene processing.

A micro-fabricated device (400A) for controlling trapped ions includes a first ion trap module (2A) including first electrodes configured to trap ions in a zone above the first electrodes and a second ion trap module laterally arranged next to the first ion trap module (2B, 2C) and including second electrodes configured to trap ions in a zone above the second electrodes. The first ion trap module and the second ion trap module are mechanically connected. The first electrodes and the second electrodes are aligned relative to each other so as to be configured to provide a shuttling of ions between the first ion trap module and the second ion trap module along the first electrodes and the second electrodes.

Disclosed herein are devices comprising stretchable interdigitated electrode arrays and methods for fabricating the devices. The devices are capable of acting as elongation sensors by sensing a change in the capacitance of the device as the distance between the interdigitated fingers changes when the device is elongated or compressed. The device may be coupled to other devices such as to be able to sense elongation or compression of the coupled device. The interdigitated fingers of the device are supported by a substrate and may be fabricated using traditional microfabrication techniques.

Aspects of the present disclosure provide a self-aligned microfabrication method, which can include providing a substrate having vertically arranged first and second channel structures, forming first and second sacrificial contacts to cover ends of the first and second channel structures, respectively, covering the first and second sacrificial contacts with a fill material, recessing the fill material such that the second sacrificial contact is at least partially uncovered while the first sacrificial contact remains covered, replacing the second sacrificial contact with a cover spacer, removing a remaining portion of the first fill material, uncovering the end of the first channel structure, forming a first source / drain (S / D) contact to cover the end of the first channel structure, covering the first S / D contact with a second fill material, uncovering the end of the second channel structure, and forming a second S / D contact at the end of the second channel structure.

The invention discloses a polarization-adjustable antiferromagnetic terahertz source based on a MnPt heterojunction. The polarization-adjustable antiferromagnetic terahertz source comprises a MnPt antiferromagnetic thin film layer, a light metal layer and an anti-oxidation layer, according to the invention, the femtosecond laser is used for exciting the femtosecond laser to generate the terahertz wave, the polarization direction of the generated terahertz wave is changed along with the change of the polarization direction of the femtosecond laser, that is, the polarization direction of the laser is changed by 1 degree, the polarization direction of the terahertz is changed by 2 degrees, the change of the azimuth angle of a sample is not needed, and the width of the generated terahertz spectrum exceeds 5 THz. No extra heavy metal layer needs to be added, the size is miniature, and the thickness is smaller than 40 nm. By adjusting polarization and phase difference of femtosecond laser, adjustability of a linear polarization state, an elliptical polarization state or a circular polarization state can be achieved, the structure is simple, a needed light path is simple, assistance of an external magnetic field or current is not needed, micromachining is not needed, the ultra-high external magnetic field interference resistance is achieved, the cost is reduced, and the application range is wide. And integration of the terahertz source is also facilitated.

The invention relates to the field of quantum computing, and particularly discloses a method and device for achieving large-scale extensible neutral atom quantum computing based on a VCSEL array. A plurality of vertical emitting laser VCSEL units with working parameters capable of being independently controlled are used for constructing a high-uniformity dot matrix light source, then a focusing system for focusing laser is constructed, the dot matrix light source is focused, and an optical tweezers array with enough strength and proper size is formed and used for capturing neutral atoms. A larger-scale optical tweezers array can be achieved through the VCSEL array prefabricated through micromachining, the number of dot matrixes is not limited by a high numerical aperture NA field angle, the possibility is provided for quantum calculation to expand to more quantum bits in the future, the expandability has important significance along with continuous increasing of the quantum calculation for the number of quantum bits, and the quantum tweezers array can be applied to a large-scale optical tweezers array. Compared with a high numerical aperture NA lens, a VCSEL array and a micro lens array, the technology is relatively mature, large-scale preparation and integration are easier to realize, the cost is reduced, and popularization and application of the quantum computing technology are facilitated.

Reversible overcoat compositions for overcoating structures during semiconductor microfabrication are described. An example composition includes a first solute with an organic hydroxy functional group, a second solute with an enol ether functional group, and an organic solvent system, with a mole ratio between all of the organic hydroxy functional groups of the first solute and all of the enol ether functional groups of the second solute being between 2.0 and 4.0.

The present invention discloses a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure and manufacturing method. The electrode structure is divided into upper and lower layers. The lower layer is a planar electrode, and the upper layer is a special-shaped planar electrode fabricated by a process method, presenting an overall shape of a combination of a circular hole and a circular groove. Both the upper and lower layer electrodes are sensitive to the out-of-plane motion of the edge of the sensitive resonator housing. The method includes realizing the patterning of the electrode by means of coating and photolithography processes on a wafer to obtain the lower electrode; fixing the prepared resonator housing to the lower electrode through precision microassembly; manufacturing the shape of the upper electrode on the wafer by etching or microfabrication processes, and realizing the patterning of the corresponding area of the upper electrode through processes such as coating, spraying glue, and multiple photolithographies; and assembling and fixing the upper electrode to the lower electrode with the resonator housing fixed by using a jig. The electrode form in the present invention improves the sensitivity of the microhemispherical gyroscope, and at the same time can limit the motion of the resonator housing, thereby enhancing the environmental adaptability of the gyroscope.

This application discloses a gas sensor and electronic device. The gas sensor includes a substrate, a micro-hot plate, and a microphone. At least one of the micro-hot plate and the microphone is disposed on the substrate. The micro-hot plate includes a heating element, and a thermoacoustic cavity is formed around the heating element. The microphone has a sensing cavity, with the sensing surface of the microphone facing the sensing cavity, and the sensing cavity communicating with the thermoacoustic cavity. The micro-hot plate also includes a first substrate and a heat insulation layer stacked together. The first substrate has a first through-hole, and the heating element is located within the heat insulation layer. Thus, the gas sensor of this embodiment, through the coordinated operation of the micro-hot plate and the microphone, can accurately detect the composition and concentration of gas using the thermoacoustic effect. Furthermore, it is fabricated using microfabrication technology, making it easy to integrate into various micro-devices and possessing broad application prospects.

The present invention discloses a fiber Bragg grating hydrogen sensor, which includes an optical fiber and a housing; a first fiber Bragg grating and a second fiber Bragg grating are connected in series on the optical fiber; the first fiber Bragg grating is close to the free end of the optical fiber and is used for temperature compensation; the surface of the fiber glass cladding of the second fiber Bragg grating has grooves; a hydrogen-sensitive material layer is arranged outside the fiber glass cladding of the second fiber Bragg grating; the optical fiber is encapsulated in the housing, so that the first fiber Bragg grating and the second fiber Bragg grating are in a natural relaxation state. The present invention uses femtosecond laser to perform microfabrication etching on the surface of the fiber Bragg grating, thereby breaking the stress accumulation between the glass cladding with an optically flat surface during operation and the hydrogen-sensitive material layer, improving the adhesion of the hydrogen-sensitive material layer, reducing the probability of fatigue delamination or rupture of the hydrogen-sensitive material thin film. At the same time, the hydrogen-sensitive material adheres to the inner side of the groove, and the optical fiber etched with the groove also becomes softer, enhancing the change in the grating wavelength caused by the expansion strain after hydrogen absorption, and significantly improving the sensitivity of the sensor.

Microfabrication process with the following steps: Providing a structure (800) comprising a layer stack (30, 40, 50) containing, from bottom to top, a first silicon oxide layer (30), a stoichiometric silicon nitride layer (40), and a second silicon oxide layer (50), and a conductive material part (20) below the layer stack (30, 40, 50) and above a substrate (10); Producing a patterned etch mask layer (57) having an opening through this layer over the layer stack (30, 40, 50); and Producing a via cavity (59) extending through the layer stack (30, 40, 50) and downwards to a top side of the conductive material part (20) by isotropic etching of parts of the second silicon oxide layer (50), the silicon nitride layer (40) and the first silicon oxide layer (30) with an isotropic etching process in which an etch rate of the silicon nitride layer (40) is 1 / 10 to 1 / 2 of the etch rate of the first silicon oxide layer (30), wherein: the first silicon oxide layer (30) comprises a first silicon oxide material produced by decomposition of tetraethyl orthosilicate, the stoichiometric silicon nitride layer (40) is produced by chemical vapor deposition at a temperature of less than 300°C, in which a silicon precursor gas and a nitrogen precursor gas are used together to produce a silicon nitride material, and the second silicon oxide layer (50) comprises a second silicon oxide material produced by decomposition of tetraethyl orthosilicate.

A method of microfabrication includes forming a sacrificial layer over a film. A resist layer is formed over the sacrificial layer. The resist layer includes an extreme ultraviolet (EUV) resist. A pattern is formed in the resist layer by an EUV exposure and a wet etch followed by rinsing and drying, resulting in uncovered portions of the sacrificial layer. The uncovered portions of the sacrificial layer are treated. The pattern is transferred from the resist layer to the film by performing an etch process.

The invention relates to a stimulation module combining galvanic and electromagnetic stimulation, consisting of a housing having: • two electrodes positioned to come into contact with the mastoids of the user and connected to a source of electric current, one of the electrodes being active, the other of the electrodes being passive • at least one electromagnetic coil for generating electromagnetic stimulation without contact, formed on an electrically insulating substrate, the substrate being associated with a heat sink • two separate compartments for housing, on the one hand, the electrical stimulation circuit connected to the electrodes and, on the other hand, the electromagnetic stimulation circuit supplying the coil • an electronic control circuit for controlling the sequences of electrical and electromagnetic stimulation, including a Bluetooth module for receiving remote control signals of the stimulation parameters.

Patterning a substrate can be provided. A substrate is covered by an immersion liquid and a microfluidic probe head is positioned in proximity with the surface of the substrate, so as to immerse a processing surface of the probe head in the immersion liquid. Liquid flows are generated between the processing surface of the probe head and the surface of the substrate, via the probe head. The liquid flows generated include an etching flow of an etching liquid (e.g., an acid or solvent) and a processing flow of a processing liquid (e.g., a solution or suspension).

The invention relates to the technical field of micromachining and surface engineering, and discloses a variable cross-section sampling needle tube inner wall electrochemical discharge additive and subtractive material synergistic preparation method which comprises the following steps: adsorbing magnetic nano powder to a magnet electrode handle to assemble a flexible tool electrode; the flexible tool electrode is inserted into a sampling needle tube injected with electrolyte containing silver nitrate and low-surface-energy substances, a local thermal field is generated through electrochemical discharge, and the flexible tool electrode is extruded in a reducing area to force powder to be rearranged to actively adapt to pore diameter changes. According to the method, the micro-nano nested structure is etched through electrochemical discharge, the recast layer is removed through mechanical grinding of adsorbed magnetic nano powder, antibacterial particles and low-surface-energy substances are induced to be co-deposited in situ through a discharge thermal field, and the silver antibacterial coating is formed in the micro-nano nested structure. The integrated cooperation of variable cross-section deep hole inner wall material removal, surface finishing and functional coating preparation is realized, and the inner wall of the sampling needle tube is endowed with hydrophobic and antibacterial properties.

The invention discloses a preparation method of a fine structure surface RB-SiC friction pair based on throttling expansion self-suction type multiphase jet flow, and aims to solve the technical problems of poor uniformity and easy generation of microcracks in fine machining of an RB-SiC material. According to the method, negative pressure is formed through the throttling expansion effect generated when micron diamond gas jet flows through a Laval nozzle, nano diamond slurry with the shear thinning characteristic is automatically sucked in, and cell type diamond cluster abrasive multiphase jet is formed through online mixing; when the surface of a workpiece is impacted, grinding material clusters are depolymerized, uniform fragile region erosion of the material is achieved through the micron diamond, flexible finishing is conducted by means of ploughing and micro-cutting effects of the nano diamond, and therefore generation of micro cracks is synergistically inhibited. And in combination with a mask plate technology, the preparation of the high-quality fine structure surface is finally realized. Through the synergistic effect of multi-phase jet flow online mixing and cell type grinding materials, the quality of the machined surface is remarkably improved, and the method is suitable for preparing the high-performance RB-SiC friction pair.

A method of microfabrication is provided. The method includes providing a wafer including a dielectric layer having an opening formed in the dielectric layer. The opening includes a bottom and a sidewall. A buffer film is formed along the bottom and the sidewall of the opening. A metal material is formed over the buffer film to fill the opening. A first coefficient of thermal expansion (CTE) α1 of the dielectric layer is larger than a second CTE α2 of the buffer film, which is larger than a third CTE α3 of the metal material.

A method of microfabrication includes providing a first relief pattern on a substrate, forming carbon—containing sidewall spacers—in the first relief pattern, removing the first relief pattern, and coating the carbon—containing sidewall spacers with a solubility—shifting agent. Then, the method includes depositing a first polymer fill on the carbon—containing sidewall spacers, diffusing the solubility—shifting agent a predetermined distance into the first polymer fill to provide a solubility—shifted region of the first polymer fill, wherein the solubility—shifted region of the first polymer fill borders the carbon—containing sidewall spacers, and developing the first polymer fill such that the solubility—shifted region is dissolved providing trenches between the carbon—containing sidewall spacers and the first polymer fill where a portion of the substrate is exposed.

The invention relates to the technical field of piezoelectric micropump devices, and discloses a piezoelectric micropump device based on an MEMS technology, which comprises a pump body, a pump cavity arranged in the pump body, a one-way valve arranged on one side in the pump cavity, an outlet valve arranged on the other side in the pump cavity, and a PZT film actuating structure arranged in the inner cavity of the pump cavity. According to the piezoelectric micropump device based on the MEMS technology, the pump cavity, the inlet flow channel, the outlet flow channel and the valve structure are integrally formed on the pump body through the MEMS micromachining technology, sealing packaging is achieved through the bonding or bonding technology by combining the upper diaphragm and the lower diaphragm, the integration degree and the structural stability of the device are improved, the one-way valve is arranged at the inlet end, and the one-way valve is arranged at the outlet end; a valve column can move up and down, the valve column is lifted to open an inlet channel when the pressure in a pump cavity is reduced, the valve column is pressed to close the inlet channel when the pressure is increased, and an outlet valve is arranged at an outlet end, is of a flexible diaphragm type structure and deforms downwards to open an outlet channel when the pressure in the pump cavity is increased.

The utility model relates to the technical field of bioengineering, and provides an array chip integrating impedance measurement and microscopic observation, which comprises a transparent substrate, a circuit board, a 3D printing board and an electrode unit, and one side of the transparent substrate is provided with a conductive film; the circuit board is arranged on the conductive film, and a plurality of micro-channels are arranged on the circuit board in an array manner; the 3D printing plate is arranged on the side, away from the conductive film, of the circuit board, a plurality of micro-cavities are arranged on the 3D printing plate in an array mode, and the positions of the micro-cavities correspond to the positions of the micro-channels one to one; the electrode unit comprises a first electrode plate and a second electrode plate, the 3D printing plate is covered with the first electrode plate, the circuit board is surrounded by the second electrode plate, and the second electrode plate and the first electrode plate form a closed loop through a conductive film. Through innovative fusion of micromachining and bioelectrochemistry, synchronization of electrophysiology (impedance) and morphology (microscopy) is realized, and the dynamic growth process of organisms is conveniently and continuously monitored.

The present application relates to a resonator and an electronic device. A high and low acoustic impedance alternating layer, a bottom temperature coefficient of frequency compensation layer, a bottom electrode layer, a piezoelectric layer, a top electrode layer and a top temperature coefficient of frequency compensation layer are sequentially stacked on a substrate by using a specific microfabrication process, to form a new resonator. The resonator can simultaneously show excellent characteristics of low loss, wide bandwidth, low temperature sensitivity and a small size through the special stack geometry, thereby having better operation reliability.

The present disclosure provides methods of manufacturing porous silicon structures having controlled sizes, shapes, and porosity by using a series of protective layers and selective etching steps. A benefit of the methods disclosed herein can be providing microfabrication and nanofabrication methods that are capable of provide porous silicon structures having sizes, shapes, and porosity that are more tightly controlled by avoiding inadvertently etching parts of the silicon structures during the fabrication process.

Thin films for developing array patterns and processes for their manufacture. The present invention relates to thin films for developing array patterns and processes for their manufacture. The thin films of the present invention have strong adhesion, improved oxidation resistance, etch compatibility with standard microfabrication techniques, and excellent electrical conductivity. Furthermore, the thin films of the present invention are stable at high temperatures in oxygen. Furthermore, the present invention relates to a simple and economical process for manufacturing thin films for developing array patterns.

A method for microfabrication of a three-dimensional transistor stack with a gate-all-around field-effect transistor device. Channels are suspended between source and drain regions. Each channel is selectively deposited with a material layer designed to adjust the threshold voltage of the channel. These layers can be oxides, high-k materials, work function materials, and metallizations. The three-dimensional transistor stack forms an array of high-threshold-voltage devices and low-threshold-voltage devices in a single package.

To provide a technique capable of finely processing a complex oxide to a submicron size or smaller.SOLUTION: A formation method of a complex oxide pattern includes: a first step of forming a resist film 20 containing hydrogen silsesquioxane (HSQ) on a substrate 10; a second step of exposing the resist film 20 with an energy line; a third step of developing the resist film 20 to form a mask 22; a fourth step of vapor-depositing a thin film 30 of a complex oxide on the mask 22; and a fifth step of removing the mask 22.SELECTED DRAWING: Figure 1

Battery component structures and manufacturing methods for solid-state battery cells include a unitary Li ion conducting sulfide glass solid electrolyte structure that serves as the basic building block around which a solid-state battery cell can be fabricated. The unitary glass structure approach can leverage precision controlled high throughput processes from the semiconductor industry that have been inventively modified as disclosed herein for processing a sulfide glass solid electrolyte substrate into a unitary Li ion conducting glass structure, for example, by using etching and lithographic photoresist formulations and methods. The glass substrate may be precision engineered to effectuate a dense glass portion and a porous glass portion that can be characterized as sublayers having predetermined thicknesses. The porous glass sublayer includes a plurality of discrete substantially vertical closed-end holes or trenches that are precision engineered into one or both major substrate surfaces using microfabrication processes.

The application provides a sequencing chip based on a solid-state nanopore array and a preparation method thereof. The chip comprises, from bottom to top, a silicon substrate, a first dielectric layer, a second dielectric layer and a plurality of electrodes, the materials of the first dielectric layer and the second dielectric layer are different; a plurality of independent sample cavities are formed in the silicon substrate and penetrate the silicon substrate; a plurality of nanopores are formed in the first dielectric layer and penetrate the first dielectric layer; a plurality of cavities are formed in the second dielectric layer and penetrate the second dielectric layer; the plurality of independent sample cavities, the plurality of nanopores, the plurality of cavities and the plurality of electrodes are arranged one by one in a one-to-one correspondence; the plurality of electrodes are arranged in a corresponding manner in the plurality of cavities and the surface of the second dielectric layer, and meanwhile, a part of each electrode exposed in a corresponding cavity forms a bridge-shaped structure. The chip is based on a mature silicon microfabrication process combined with the breakdown principle of dielectric materials, has small and controllable process fluctuation, low cost and simple process, is suitable for controllable large-scale parallel formation of a nanopore array, and is thus suitable for industrial mass production.