The invention discloses a flip LED
chip capable of improving brightness and a preparation method thereof, a transparent conductive layer is prepared and generated on a P-GaN layer, a first insulating layer and a second insulating layer are sequentially deposited on the transparent conductive layer, and the second insulating layer covers the surface of the LED
chip with the prepared transparent conductive layer; performing
etching at positions, corresponding to the P-GaN layer, of the first insulating layer and the second insulating layer according to a preset interval to generate conductive holes communicated with the P-GaN layer, and performing
etching at positions, corresponding to the N-GaN layer, of the first insulating layer and the second insulating layer to
expose the N-GaN layer; a
metal layer is formed on the outer surface of the second insulating layer through
evaporation, the conductive hole is filled with the
metal layer to form a contact interface with the P-GaN layer, and the
metal layer extends to the exposed area of the N-GaN layer and covers at least part of the surface of the N-GaN layer; and depositing and forming a third insulating layer and a fourth insulating layer which are sequentially stacked on the metal layer. According to the invention, the overall brightness and reliability of the flip LED
chip are improved under the condition that the
forward voltage is not obviously increased.