292 results about "Quartz substrate" patented technology

The invention discloses a process for improving surface defects of a quartz substrate of a photomask IC (integrated circuit) chip, relates to the technical field of quartz substrates, and aims to solve the problem that the surface defects of the quartz substrate cannot be effectively improved in the process from material selection to manufacturing to later quality control in the prior art. Through three methods of visual inspection, automatic optical detection and laser scanning detection, multi-dimensional detection from macroscopic to microscopic and from the surface to the structure is realized, the accuracy and comprehensiveness of defect identification are ensured, and by setting a clear defect classification standard and a maximum defect range, the defect identification accuracy is improved. Defects possibly affecting product performance can be found and treated in time, the surface laser repairing method is suitable for shallow layer defects, the internal ion implantation repairing method can effectively treat deep layer defects, the flexibility and adaptability of the technology are improved through diversified repairing strategies, and unnecessary material waste and machining cost are avoided through accurate repairing.

The invention provides a terahertz wave band sensing chip for detecting hepatitis B and H9N2 and application thereof, at least one terahertz wave band sensing unit structure, and each terahertz wave band sensing unit structure comprises a first double-hollow cylinder and a second double-hollow cylinder which are arranged on a quartz substrate at an interval, the first double-hollow cylinder and the second double-hollow cylinder are double-hollow cylinders prepared from a silicon material, the radius ratio of double hollow parts of the second double-hollow cylinder is different from the radius ratio of double hollow parts of the first double-hollow cylinder, and quasi-BIC is realized through asymmetry of the first double-hollow cylinder and the second double-hollow cylinder. High Q factors as high as 1674 and 2244 are provided respectively, and the sensitivities are as high as 110 GHz / RIU and 85 GHz / RIU respectively.

The sintering and groove sinking integrated system comprises a sintering furnace, a groove sinking furnace, a weighing mechanism, a driving mechanism and a groove sinking mold, the weighing mechanism is connected with the driving mechanism, the driving mechanism is connected with a quartz rod, the bottom end of the sintering furnace is connected with the top end of the groove sinking furnace, and inner cavities of the sintering furnace and the groove sinking furnace are communicated; and the groove sinking die is arranged in the groove sinking furnace. The sintering furnace and the groove sinking furnace are integrally arranged, and the quartz rod is directly subjected to groove sinking shaping after being sintered, so that the production time is effectively shortened, and the production cost is reduced; a driving mechanism is used for hanging and driving a quartz rod to descend, the quartz rod enters a groove sinking furnace after being densified in a sintering area, and the quartz rod is gradually melted and spread in a groove sinking mold from the bottom, so that the problems of stripes, bubbles, poor uniformity and large stress in a product caused by folding and toppling due to the fact that the length-diameter ratio of the quartz rod is too large are solved; production of large-size, low-defect, high-performance and high-purity products is achieved, and the method can be applied to development of IC photomask substrates.

The invention belongs to the technical field of optical film measurement, and particularly relates to a method and system for measuring the thickness of a quartz substrate optical film. The method comprises the following steps: acquiring a surface coordinate model of a quartz substrate, and dividing a film area into a parallel measurement area and a non-parallel measurement area; performing parallel measurement and non-parallel measurement on the two types of regions respectively to obtain first thickness data and second thickness data which jointly form original thickness data; determining measurement parameters corresponding to the original thickness data acquisition process, wherein each measurement parameter represents the offset of the corresponding measurement point; and correcting the original thickness data based on the measurement parameters to generate corrected thin film thickness data, and taking the corrected thin film thickness data as the thickness of the thin film area. According to the invention, dynamic error correction is carried out on the original thickness data, the accuracy and reliability of the thickness data of the thin film are improved, and meanwhile, comprehensive scanning of the irregular thin film is realized through a partition measurement strategy.

The invention provides an interposer and a preparation method thereof, and a photoelectric co-packaging structure, and the interposer comprises a substrate which comprises a glass substrate or a quartz substrate; the functional layer is arranged on the substrate, the refractive index of the functional layer is higher than that of the substrate, and the optical structure arranged on the functional layer at least comprises a micro-nano optical structure. The interposer realizes integration of an optical structure through the preset functional layer, and solves the problems of difficult micro-nano processing, difficult alignment, low integration level and the like of a glass material.

Aspects and embodiments disclosed herein include a surface acoustic wave device comprising a quartz substrate, a layer of a first lithium-based piezoelectric material disposed on an upper surface of the quartz substrate, a layer of a second lithium-based piezoelectric material formed of a material different from the first lithium-based piezoelectric material disposed on an upper surface of the layer of the first lithium-based piezoelectric material, and interdigital transducer electrodes disposed on an upper surface of the layer of the second lithium-based piezoelectric material.

Methods and systems are provided for a photoconductive thin film of a plurality of Lead Selenide (PbSe) nanostructures arranged on quartz substrates. The photoconductive thin film is synthesized, for example, using a chemical bath deposition, and can include a tunable iodine doping process to select the size and / or shape of the nanostructures. An oxygenation sensitization process at a sufficiently high temperature can increase carrier mobility of the thin film.

The invention belongs to the technical field of inertial devices, and particularly relates to a quartz base plane differential type quartz vibrating beam accelerometer and a packaging method thereof.The accelerometer comprises a shell, a circuit board, a VIA chip, a quartz substrate and a conductive contact pin, the interior of the shell is a vacuum cavity, the quartz substrate is composed of a quartz body, a rectangular step and a solder film, and the conductive contact pin is connected with the circuit board; the rectangular step is used for positioning and fixing the VIA chips, the solder film realizes welding connection of the chips, the two VIA chips output positive and negative signals through differential detection, and the circuit board provides driving signals for the chips and amplifies the output signals; the conductive pin transmits a signal and receives a control signal to regulate and control the working state of the chip. Through the vacuum cavity design, the differential detection technology, the high-precision assembly method and the reliable packaging technology, the problems that in the prior art, instability is caused by mismatching of the gluing technology and the thermal expansion coefficient, and the performance is affected by assembly errors are solved, and the measurement precision, the anti-interference capacity and the assembly stability of the accelerometer are improved.

The invention provides a chip type multi-core optical fiber beam splitter. The chip type multi-core optical fiber beam splitter is characterized in that the multi-core optical fiber beam splitter is composed of an optical fiber fixing quartz substrate, a quartz cover plate, a three-core optical fiber and three single-core optical fibers; wherein the optical fiber fixing quartz substrate is provided with two cross-shaped orthogonal V-shaped grooves, the cut flat end face of the three-core optical fiber and the first single-core optical fiber with the fiber end provided with a 45-degree reflection inclined plane are oppositely placed in the first V-shaped groove, and the flat end faces of the second single-core optical fiber and the third single-core optical fiber are oppositely placed in the second V-shaped groove; light transmitted by the middle core of the three-core optical fiber is output from the end face and then directly coupled into the core of the first single-core optical fiber, light transmitted by the two side cores is reflected by the 45-degree reflection inclined face of the first single-core optical fiber and then coupled into the fiber cores of the second single-core optical fiber and the third single-core optical fiber to be transmitted, and therefore beam splitting of the three-core optical fiber is achieved. The multi-core optical fiber beam splitter has the advantages of being small and exquisite in structure, stable in performance and capable of forming an array, and can be widely applied to the technical fields of data centers, optical fiber sensing and the like.

The invention discloses a transmission type liquid crystal terahertz spatial light modulator with a large switch ratio. The transmission type liquid crystal terahertz spatial light modulator structurally comprises an upper-layer quartz substrate, an upper-layer metal structure, a liquid crystal layer, a lower-layer metal structure and a lower-layer quartz substrate in sequence from top to bottom, the upper-layer metal structure is adhered to the back surface of the upper-layer quartz substrate and is a four-opening square ring reverse structure array, and the lower-layer metal structure is adhered to the top surface of the lower-layer quartz substrate; and the liquid crystal layer is filled between the upper-layer metal structure and the lower-layer metal structure to form a metal-medium-metal structure. The electro-optical effect of the liquid crystal is utilized, the FPGA is communicated with the electrodes corresponding to the metal structures, voltage is applied between the upper-layer metal structure and the lower-layer metal structure, the effective dielectric constant of the liquid crystal can be changed by adjusting the voltage, and therefore on-off of terahertz waves is achieved. And the upper computer controls the FPGA to output voltage through an instruction so as to realize programmable regulation and control of the device.

The invention belongs to the technical field of biology, and discloses a micro-fluidic chip for in-situ single-cell non-label imaging of an upright Raman microscope. Comprising a quartz substrate subjected to surface treatment, a detachable cell chamber, a glass sheet provided with a through hole and a gravity flow channel control system, the cell chamber is used for cell culture before in-situ cell imaging, after cell culture is completed, the cell chamber is taken off, the glass sheet is bonded with the quartz substrate, the glass sheet is used for packaging a chip, and the gravity flow channel control system is used for controlling the gravity flow channel. The gravity flow channel control system is connected with the through hole and is used for guiding fluid to flow in the chip; the micro-fluidic chip can effectively package living cells and is compatible with a forward Raman microscope, so that in-situ unlabeled Raman imaging of single cells under the microscope is realized, experimental operation is simplified, more efficient cell treatment and real-time monitoring capabilities are provided, imaging stability and accuracy are improved, and the micro-fluidic chip is suitable for large-scale popularization and application. The method is of great significance to application of drug screening, biochemical research and the like.

The invention provides a method for improving the infrared reflection performance of a gold coating, which comprises the following steps: dispersing an iron compound solution into an organic gold coating, and uniformly stirring to obtain an iron-doped organic gold coating; a quartz substrate is coated with the iron-doped organic gold coating, and an iron-doped gold coating is obtained through drying and annealing processes. Iron is doped in the organic gold coating, and the infrared reflection performance of the gold coating is effectively enhanced by utilizing charge transfer and transition of Fe < 3 + > and the influence of the electron structure of Fe < 3 + > on the band gap characteristic of crystals and the size structure of crystal grains. The method is simple in preparation and low in cost, and the iron-doped gold coating prepared through the method is excellent in weather resistance, corrosion resistance and infrared reflection performance and has wide application prospects.

The invention relates to the technical field of nano photonics and metasurfaces, in particular to a metasurface sensor based on a non-radiative dark state, which comprises a quartz substrate and dumbbell-shaped slotted silicon blocks arranged on the surface of the quartz substrate periodically; the dumbbell-shaped slotted silicon block is composed of two symmetrical circular slots and a rectangular channel connecting the two circular slots, the period P of the dumbbell-shaped slotted silicon block is 600-1000 nm, the length and width p of the silicon block are 500-700 nm, the height H of the dumbbell-shaped slotted silicon block is 80-120 nm, the width a of the channel is 15-30 nm, the length b of the channel is 30-50 nm, and the radiuses R1 and R2 of the initial circular slots are 70-100 nm. The device can excite two non-radiation modes at the same time, namely, an anapole mode and a quasi-continuous domain bound state (q-BIC) mode. By designing the dielectric metasurface structure composed of the dumbbell-shaped slotted silicon block and the quartz substrate, the high Q factor and strong electric field enhancement effect is achieved, and the device not only has excellent optical performance, but also shows high sensitivity and modulation depth in multiband sensing, and is suitable for high-precision optical sensing application.

The invention relates to the technical field of force measurement, and provides a pressure sensor sensitive structure and a packaging method thereof, the pressure sensor sensitive structure comprises a pressure sensing layer, a vibration beam layer, a stress isolation layer and a substrate layer, and the pressure sensing layer comprises a pressure sensing film; the vibrating beam layer comprises a vibrating beam base body and a vibrating beam structure, the vibrating beam base body is connected to the pressure sensing film, and the vibrating beam structure is connected to the vibrating beam base body; the stress isolation layer comprises a stress isolation ring structure, the stress isolation ring structure is connected to the side, away from the pressure sensing film, of the vibration beam base body, the stress isolation ring structure is hollow to form a through hole, and the vibration beam base body covers the first end of the through hole; the substrate layer comprises a quartz substrate sheet, the quartz substrate sheet is connected to the stress isolation layer, and the quartz substrate sheet covers the second end of the through hole. The stress isolation ring structure is arranged between the substrate layer and the vibration beam layer, so that the influence of external stress on the vibration beam layer can be isolated, the stability and the precision of the vibration beam structure are protected, the assembly stress, the thermal stress and the vibration impact stress from packaging can be effectively weakened, and the stability of zero offset of the whole meter is improved.

Methods and systems are provided for a photoconductive thin film of a plurality of Lead Selenide (PbSe) nanostructures arranged on quartz substrates. The photoconductive thin film is synthesized, for example, using a chemical bath deposition, and can include a tunable iodine doping process to select the size and / or shape of the nanostructures. An oxygenation sensitization process at a sufficiently high temperature can increase carrier mobility of the thin film.

The invention discloses a gluing process of a high-cleanliness IC chip quartz substrate, and relates to the technical field of photoetching machines. The objective of the invention is to solve the problem that a manner of dropwise adding photoresist may hardly completely avoid generation of bubbles, and especially in a structure with a high aspect ratio, variable-speed rotation contributes to improvement of uniformity of a coating, but may still hardly achieve an ideal gluing effect for some quartz substrates with complex shapes or sizes. The stability of the substrate in the gluing process is ensured through preheating treatment and the vacuum adsorption device, the surface of the substrate is inspected by combining the visual inspection device, the high cleanliness of the substrate is ensured, good initial conditions are provided for the gluing process, accurate control is achieved in the extreme ultraviolet lithography process, the adhesive force of photoresist and the substrate is improved, and the production efficiency is improved. The etching resistance of the photoresist is improved, the quality of the pattern structure on the surface of the developed quartz substrate is ensured through visual inspection and post-baking treatment, and the overall manufacturing quality and efficiency of the IC chip are remarkably improved.

The invention discloses a super-resolution micro lens and a preparation method thereof. The lens comprises a photoresist spherical micro lens and a mixed substrate plane lens which are sequentially arranged from top to bottom. The specific preparation method comprises the following steps: S1, preparing a photoresist cylinder on a quartz substrate; s2, reflowing the photoresist cylinder into a micron lens by using a photoresist reflowing process; s3, preparing a mixed substrate plane lens on the surface of the to-be-detected sample; and S4, transferring the micron lens to the surface of the mixed substrate plane lens. By changing the thickness of the mixed substrate plane lens, adjustment of the amplification coefficient and the numerical aperture can be realized, and compared with a micro lens without a mixed substrate, the micro lens has higher imaging resolution. The method has a wide prospect in the technical field of optical imaging.

The present invention discloses a quartz substrate lithium niobate mode spot converter, which relates to the fields of optical communication and microwave photonics. The present invention includes a quartz substrate layer, a silica cladding layer, a lithium niobate waveguide layer, an oxide interlayer and an oxide upper cladding layer. The lithium niobate waveguide layer is a three-layer stepped structure, and the cross-sections of the fiber coupling ends of the three-layer lithium niobate waveguide layers are all isosceles trapezoids. The cross-sections of the fiber coupling ends of the oxide interlayer and the oxide upper cladding layer are both provided with notches at the lower part and isosceles trapezoidal protrusions at the upper part, and the oblique side angles of the isosceles trapezoidal protrusions of the oxide interlayer and the oxide upper cladding layer and the isosceles trapezoidal cross-sections of the lithium niobate waveguide layer do not exceed 70°. The present invention can achieve high coupling and low transmission loss when optical signals are coupled between an integrated lithium niobate photonic chip and an optical fiber, and reduces the process processing difficulty, and has high practicability.

The invention provides an integrated cutting and contour grinding method for a square quartz substrate, and belongs to the technical field of quartz substrate machining. The method comprises the steps that a square quartz substrate blank to be machined is cut through multi-wire cutting equipment, cutting parameters are monitored and adjusted in real time, and cooling liquid is evenly sprayed to a cutting area during cutting so as to prevent the square quartz substrate blank from cracking or deforming caused by thermal stress; a self-adaptive control numerical control engraving and milling machine is used for grinding the length, the width and the chamfered edge of the cut and formed square quartz substrate workpiece, the position and the size deviation of the workpiece are automatically detected, and the grinding path is dynamically adjusted to achieve micron-grade precision grinding; an environment compensation mechanism is introduced, and grinding parameters are automatically adjusted based on workshop temperature and humidity changes. High-precision integrated cutting and contour grinding of the square quartz substrate are achieved, the machining efficiency and the product quality are remarkably improved, and the consistency of the size precision and the surface quality is ensured.

The invention discloses a preparation method of a single-walled carbon nanotube, which comprises the following steps: (1) annealing a quartz substrate to obtain a pretreated substrate; (2) putting a catalyst precursor and an accelerant into the pretreated substrate, putting the pretreated substrate into a constant-temperature area of a tubular furnace, introducing protective gas, raising the temperature to 600-800 DEG C in the atmosphere of the protective gas, and keeping the constant temperature for 6-10 minutes; (3) hydrogen is preheated, the preheated hydrogen is introduced into the tubular furnace, the temperature is increased to 800-1000 DEG C, and heat preservation is conducted for 6-10 min; and (4) preheating the carbon source gas, introducing the carbon source gas into the tubular furnace, preserving heat for 20-30 minutes at the temperature of 800-1000 DEG C, stopping conveying the hydrogen and the carbon source gas, cooling to 180-220 DEG C, stopping conveying the protective gas, introducing air, cooling, and collecting a product to obtain the single-walled carbon nanotube. According to the preparation method of the single-walled carbon nanotube, the tube diameter of the single-walled carbon nanotube is 1-3 nm, the carbon yield is larger than 12%, the single-walled carbon nanotube can be produced in batches, and the single-walled carbon nanotube is used for preparing carbon nanotube conductive paste.

The invention provides a square quartz substrate double-face grinding method and system and a process production line, and belongs to the technical field of quartz substrate machining. The method comprises the steps that a square quartz substrate workpiece subjected to profiling contour grinding is loaded in a grinding jig of a double-face grinding machine, thickness change dynamic parameters of the square quartz substrate workpiece are collected in real time, and a grinding pressure value is adjusted based on the thickness change dynamic parameters; the method comprises the following steps: mixing artificial carborundum and nanoscale alumina particles according to a mixing ratio of 5-50%, and preparing a multi-stage particle size grinding fluid with the particle size of W5-W28; the rotating speed of the double-sided grinding machine in the coarse grinding stage is set to be 8 r / min-30 r / min, and the rotating speed of the double-sided grinding machine in the fine grinding stage is set to be 8 r / min-25 r / min; and the actual removal amount of the workpiece in the grinding process is obtained, and the grinding time is dynamically adjusted based on the actual removal amount of the workpiece. And the machining efficiency, the thickness uniformity and the surface quality can be improved, so that efficient and precise double-sided grinding of the square quartz substrate is realized.

The present invention discloses an additive manufacturing method for a laser window with a micro-nano structure and a laser window. The steps include: 1) ultrasonically cleaning the polished quartz glass with a chemical reagent; (2) self-assembling polystyrene microspheres using a micro-injection pump and transferring them onto the ultrasonically cleaned quartz glass; (3) reducing the diameter of the polystyrene microspheres using an ion beam assisted coating technique and then coating a silica material thereon; (4) cleaning the quartz substrate with a chemical reagent to wash away the polystyrene microspheres with a part of silica; (5) performing secondary ion beam assisted coating on the cleaned quartz substrate. The laser window with a micro-nano structure prepared by this method has a high transmittance, a wide anti-reflection band, and strong laser damage resistance.

The invention discloses a gas phase carbon center free radical in-situ capture method based on a micro-fluidic chip technology, and belongs to the technical field of micro-fluidic chip analysis and testing. The winding array micro-channel structure is formed by etching on the quartz substrate and comprises a sample introduction channel, a gas phase carbon center free radical in-situ capture channel (winding array micro-channel) and a collection channel, and the sample introduction channel and the collection channel are both connected with the quartz capillary tube. The sample introduction channel is used for inputting gas; the gas-phase carbon center free radical in-situ capturing channel is used for coating a capturing agent and capturing gas-phase carbon center free radicals; and the collection channel is used for collecting samples. The quartz micro-fluidic chip with the gas-phase carbon center free radical in-situ capture channel has a longer channel and a larger inner surface area of the channel, so that the quartz micro-fluidic chip can be coated with more capture agents, and the capture efficiency is remarkably improved. And a 2, 2, 6, 6-tetramethylpiperidine oxide trapping agent is adopted. According to the invention, in-situ capture and efficient enrichment of trace gas-phase carbon center free radicals can be realized.

The application discloses a kind of light field regulation detection method and device based on computing spectral reconstruction, belong to spectral analysis technical field.The method is by introducing medium-metal composite nanostructure, integrates metal nanoisland array and silicon nitride nanocolumn array on quartz substrate, realizes electric field enhancement using the local surface plasmon resonance effect excited by metal nanoisland array, simultaneously realizes wide spectral range phase coding by medium nanocolumn array;Super surface chip is integrated with single point detector, combines pre-calibrated super surface sensing matrix A and enhancement factor matrix E, and reconstructs spectrum using compressed sensing or Tikhonov regularization algorithm.The application keeps the advantages of miniaturization and no moving parts, realizes directional high sensitivity detection to weak signal, and signal-to-noise ratio is improved.

The invention provides a high-quality-factor metal arched quartz resonator and a preparation method thereof, and relates to the technical field of sensors. The structure of the metal arched quartz resonator sequentially comprises a lower metal electrode layer, a lower adhesion layer, a quartz substrate, an upper adhesion layer, an upper metal electrode layer and a metal arched structure from bottom to top. And each layer coincides with the geometric center normal of the metal arch structure. The metal arched structures are consistent in height and comprise a central symmetrical metal structure and a plurality of annular metal structures surrounding the periphery of the central symmetrical metal structure, and the two annular metal structures are concentric. The ring widths of the annular metal structures are integrally decreased from the center to the periphery, and the distances are integrally increased from the center to the periphery. According to the design, the metal arched quartz resonator has the advantages of high quality factor, high yield and low processing cost.

The present invention relates to the technical field of graphene, and discloses a quartz-based graphene preparation method, which comprises: placing a quartz substrate in a reducing atmosphere at a temperature of 1160-1200 DEG C, and carrying out heat preservation for 100-140 min, the reducing atmosphere comprising hydrogen and an inert gas, and the hydrogen accounts for 5-10% of the total volume of the hydrogen and the inert gas; and introducing a carbon source gas, and depositing and growing graphene on the surface of the treated quartz substrate. According to the method, the proportion of hydrogen is reduced, the reducing capacity in the atmosphere is reduced, hydroxyl groups are gradually separated out from a quartz bulk phase, the quartz surface is in the oxygen-containing atmosphere, a substrate can be subjected to phase change at the temperature of 1,160-1,200 DEG C and is converted into a cristobalite crystal phase, the melting point of cristobalite can reach 1,700 DEG C, the tolerance temperature of the cristobalite is greatly increased, the deposition environment of graphene is improved, and the quality of graphene is improved.

The invention discloses a dark current suppression method of a gold-doped lead sulfide colloid quantum dot photoelectric detector, and relates to a quantum dot technology. According to the method, a gold electrode is grown on a quartz substrate through magnetron sputtering to serve as a bottom electrode of the device. The preparation method comprises the following steps: spin-coating an Au NP-doped lead sulfide quantum dot solution on a gold electrode, covering an EDT solution on a quantum dot film to perform ligand exchange, spin-drying the quantum dot film on a spin-coating machine after ligand exchange, and washing residual ligands for multiple times in spin-coating by adopting a methanol solution. The PbS-EDT spin-coating step is repeated to stack the lead sulfide quantum dots, so that a compact quantum dot thin film is obtained to serve as a light absorption layer, then a zinc oxide thin film is grown on the lead sulfide thin film through magnetron sputtering to serve as an electron transport layer, and then high-transmittance low-resistance ITO is continuously grown through magnetron sputtering to serve as a top electrode of the device. According to the method, low-cost solution processing of the photosensitive layer of the device is achieved, batch preparation can be achieved, and the photoelectric property is improved through doping of gold nanocrystals.

To provide a high frequency and low CI vibration element, a vibrator, and an oscillator.SOLUTION: A vibration element 1 includes a quartz crystal substrate 10 having a vibration portion 11 including a vibration region 13 and a support portion 12 that is thicker than the vibration portion 11, and excitation electrodes 31, 32 arranged in the vibration region 13, and satisfies the relationship y≤11.4exp(-x / 174.8)+1.8, and y [nm] is the surface roughness in the vibration region 13 of the quartz crystal substrate 10 and x [MHz] is the oscillation frequency.SELECTED DRAWING: Figure 5

This invention provides a highly reliable substrate in which fine through-holes are filled with metal, enabling high-density mounting and high reliability, as well as a method for manufacturing the same. [Solution] The above problem is solved by a micro-through-hole filled substrate 10 in which a plurality of micro-through holes 2 formed in a substrate 1 are filled, wherein the micro-through holes 2 are filled with a conductive layer (at least 3b) formed on their inner wall surface and a metal solder layer 3c formed on the conductive layer, the conductive layer having a copper plating layer 3b formed on the metal solder layer side, and the metal solder layer 3b being filled with nickel-containing molten solder treated with an organic fatty acid-containing solution. The substrate 1 is preferably a quartz substrate or a glass substrate, and an intermetallic compound layer 4 is formed on the conductive layer 3b side of the metal solder layer 3c that combines with the copper component constituting the conductive layer 3b to prevent copper corrosion.

The application relates to a full-quartz-encapsulated doped quartz whispering gallery microsphere sensor and a preparation method thereof, and belongs to the technical field of microcavity lasers. The full-quartz-encapsulated doped quartz whispering gallery microsphere sensor comprises a quartz substrate, a T-shaped groove is engraved on the quartz substrate, a fiber taper is transversely placed in the T-shaped groove of the quartz substrate, a doped quartz whispering gallery microsphere is vertically placed in the T-shaped groove of the quartz substrate, and the doped quartz whispering gallery microsphere is directly in contact with the fiber taper for coupling. The full-quartz-encapsulated doped quartz whispering gallery microsphere sensor provided by the application encapsulates the fiber taper-microsphere coupling system in the groove of the quartz substrate, has the characteristics of miniaturization, high integration and stable structure, and has good reliability in high-temperature, high-pressure and corrosive environments, and is suitable for various high-temperature measurement and detection scenes.