52 results about "Saw (device)" patented technology

Certain aspects of present disclosure are directed towards a surface acoustic wave (SAW) device. The SAW device may include a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer and comprising an electrode including: a first aluminum (Al)-copper (Cu) layer; a second Al—Cu layer; a first barrier layer between the first Al—Cu layer and the second Al—Cu layer; a third Al—Cu layer; and a second barrier layer between the second Al—Cu layer and the third Al—Cu layer.

A surface acoustic wave (SAW) device including resonators formed on piezoelectric substrates of different heights and a method for manufacturing the same are provided. The SAW device includes: a support substrate; a piezoelectric substrate disposed on the support substrate and including a first region, a second region, and a step region disposed between the first and second regions; a first resonator formed on the first region of the piezoelectric substrate; a second resonator formed on the second region of the piezoelectric substrate; and a bus bar formed on the step region of the piezoelectric substrate. The piezoelectric substrate has different thicknesses between the first and second regions, and a surface of the step region connecting the first and second regions forms an angle of 60 degrees or less with the top surface of the first or second region.

The invention discloses a filter and a radio frequency front-end module, and relates to the technical field of radio frequency filtering. The filter comprises a piezoelectric substrate, a first resonator, a second resonator and a dielectric layer. The first resonator and the second resonator are both arranged on the piezoelectric substrate, the first resonator is arranged on one side of the second resonator, a spacing area is formed between the first resonator and the second resonator, and the first resonator and the second resonator both comprise interdigital transducers; the dielectric layer is at least arranged in the spacer region; wherein the propagation speed of sound waves in the dielectric layer is greater than that of the sound waves in the interdigital transducer. According to the invention, surface acoustic waves leaked by the surface acoustic wave devices can be converted into leaky waves, so that mutual interference between the surface acoustic wave devices is effectively reduced, and the performance of the filter is improved.

The present disclosure relates to a surface acoustic wave (SAW) device with robust metal structures, which at least provide electrically low resistance and mechanically strong connections between different inter digital transducers (IDTs) within the SAW device. Each metal structure includes a metal base section that is formed from a same metal layer as corresponding IDTs, and a metal stack over the metal base section. The metal stack includes a bottom adhesive layer over the metal base section, a bottom conductive layer over the bottom adhesive layer, an intermediate adhesive layer over the bottom conductive layer, a top conductive layer over the intermediate adhesive layer, and a top adhesive layer over the top conductive layer. The bottom and top conductive layers have a higher electrical conductivity than each adhesive layer, while each adhesive layer has a stronger adhesion strength than the bottom and top conductive layers.

The invention relates to a SAW device with improved thermal management. The invention focuses on minimizing hot spots on filter chips by generating heat radiators using mechanical acoustic structures and connected circuitry. The metal-to-wafer relationship gradually increases to provide better heat dissipation and heat dissipation. Preferably, the shunt line of the stepped arrangement of the SAW resonators (RS1, RS2, RS3) comprises a widened section (BS). Every two series resonators (RS1, RS2, RS3) arranged one behind the other in the series signal line are connected via a common bus bar (BBCN) extending over the entire length of the subsequent series resonator, the lateral extension of the common bus bar representing a first portion of each respective shunt line, the node being connected to the parallel resonators (RP1, RP2, RP2) of the shunt line (SLS1). Each first shunt line portion between the series resonators (RP1, RP2) comprises a widened section (BS) wider than the common bus bar, the widened section extending over the entire width of the parallel resonator (RP1), the first reflector (REF1) of the parallel resonator facing the laterally adjacent series resonators being formed by the widened section (BS).

This invention discloses a surface acoustic wave (SAW) device, comprising: a resonant filter element including multiple parallel resonators, one end of which is connected to at least one ground port; wherein at least two of the parallel resonators are connected to the same ground port, and the ground port connected to the at least two parallel resonators is a common ground port; and a packaging substrate located on one side of the resonant filter element; the packaging substrate includes a first substrate, which includes a common ground region and at least one independent cut-out region; the independent cut-out region is correspondingly disposed to at least one of the common ground ports and connected to the corresponding common ground port; the independent cut-out region is connected to the common ground region through a connecting portion, the extension direction of which is perpendicular to the SAW propagation direction of the SAW device. This invention improves the isolation performance of the device.

The application relates to the technical field of surface acoustic wave devices, in particular to a structure and method for suppressing bulk acoustic wave interference in a multilayer SAW resonator, which comprises a support substrate, a bonding layer, a piezoelectric layer and an interdigital transducer, a reflective grating and an RF signal pad arranged in sequence from bottom to top; wherein an acoustic impedance matching and attenuating layer is arranged between the RF signal pad and the piezoelectric layer, and the acoustic impedance matching and attenuating layer is a single dielectric layer or a periodic multilayer film alternately stacked by two or more dielectric materials with different acoustic characteristics, and the material of the single dielectric layer is silicon dioxide or doped silicon dioxide. The application sets the acoustic impedance matching and attenuating layer between the RF signal pad and the piezoelectric layer, so as to effectively absorb and scatter the bulk acoustic wave energy generated below the pad, convert the bulk acoustic wave energy into heat energy, significantly weaken the bulk acoustic wave intensity, and improve the overall performance and consistency of the SAW device in high-frequency communication applications.

The thin-film SAW device includes a carrier substrate (CA), a TCF compensation layer (CL), a piezoelectric layer (PL), and an IDT electrode (EL) on top of the piezoelectric layer. A functional layer (FL) is arranged between the piezoelectric layer and the TCF compensation layer to further reduce the TCF. Taking into account the speed of sound, density, and stiffness, the material properties of the functional layer are matched to those of the piezoelectric layer, so that the material properties of the functional layer and the piezoelectric layer do not deviate from each other by more than 10% in the absence of the piezoelectric effect. The functional layer can have the same crystal structure as the useful piezoelectric layer without piezoelectric properties.

A radio-frequency module includes: plural electronic components that include plural bare SAW devices and that are disposed between a major surface of a module substrate and a major surface of a module substrate, on a major surface of the module substrate, and on a major surface of the module substrate; plural external connection terminals disposed on the major surface; and resin members. The resin member covers the plural SAW devices but does not fill between central regions of the plural bare SAW devices in which the IDT electrodes are disposed and the major surface to which plural bump electrodes are joined. The plural bare SAW devices are disposed on the major surface, and no bare SAW devices are disposed between the major surfaces and on the major surface.

A surface acoustic wave (SAW) device includes a piezoelectric layer, a high acoustic velocity layer coupled with the piezoelectric layer, and at least one transducer. The SAW device can include a multi-layer graphene layer in an electrode of the at least one transducer and a multi-layer graphene layer in a conductive layer coupled with the piezoelectric layer.

This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better heat dissipation and heat sinking. Preferably the shunt lines of the ladder type arrangement of SAW resonators (RS1, RS2, RS3) comprise a broadened section (BBCN). Each two series resonators (RS1, RS2, RS3) that are subsequent to each other in the series signal line are connected via a common busbar (BBCN) extending over a whole length of that subsequent series resonators, a lateral extension of the common busbars represents a first section of a respective shunt line each, each first shunt line section between a node and the parallel resonator (RP1, RP2) of a shunt line (SLS1) comprises a broadened section (BS) that is broader than the common busbar, the broadened section extends over the whole width of the parallel resonator (RP1), the first reflector (REF1) of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section (BS).

Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device. The SAW device may include a piezoelectric layer, and an interdigital transducer (IDT) disposed above the piezoelectric layer. The IDT may include a plurality of fingers. A cap layer may be disposed above the IDT. A cavity may be formed between the IDT and the cap layer. A material such as sulfur hexafluoride (SF6) may be disposed above and between the plurality of fingers of the IDT within the cavity.

The invention relates to the technical field of filters, and discloses an SAW device and a preparation method thereof, and the method comprises the steps: providing a piezoelectric substrate, and forming a projection array structure in a preset region of the piezoelectric substrate; forming a first dielectric layer covering the bulge array structure on the piezoelectric substrate; providing a supporting substrate, and forming a second dielectric layer on the supporting substrate; bonding the first dielectric layer and the second dielectric layer face to face; an interdigital electrode is formed on the side, away from the protrusion array structure, of the piezoelectric substrate, and the cross tail end of the interdigital electrode corresponds to protrusions in the protrusion array structure. Transverse clutters are suppressed, and the performance of the device is improved.

A surface acoustic wave device (5) is provided using a layered substrate system with a special material and a special cut of a piezoelectric thin film (4) selected for utilizing Rayleigh mode. The proper choice of the material and the cut of the piezoelectric thin film leads to a low velocity of the excited wave mode, which allows the usage of smaller devices without deteriorating other performance parameters according to specifications.

The present invention relates to the field of surface acoustic wave (SAW) devices. Specifically, the SAW device of the present invention suppresses parasitic modes, specifically transverse modes. The SAW device of the present invention comprises: a piezoelectric layer (101) for propagating SAW; at least one electrode (102) arranged on the piezoelectric layer and used to couple an electrical signal to the SAW propagating in the piezoelectric layer (101). The SAW device also comprises at least one busbar (103) for routing the electrical signal to the electrode (102). The SAW device also comprises a decoupling layer (104) that separates the piezoelectric layer (101) and the electrode (102) from the busbar (103). The decoupling layer (104) has an acoustic impedance different from that of the electrode (102) and the busbar (103).

An oscillating saw assembly (100) and an oscillating saw device. The oscillating saw assembly (100) comprises an oscillating saw blade (1) and a sheath plate (2). The oscillating saw blade (1) comprises a main body portion (11) and a sawtooth portion (12) connected to one end of the main body portion (11). The sheath plate (2) comprises a first cover plate (21) and a second cover plate (22) which are stacked and fixed to each other by welding, the first cover plate (21) and the second cover plate (22) define an accommodating space (4), the main body portion (11) is arranged in the accommodating space (4) in an oscillating manner, and the sawtooth portion (12) extends from one end of the accommodating space (4). The sheath plate (2) has a front end portion (51) and a rear end portion (52), and the width of the rear end portion (52) is greater than the width of the front end portion (51).

The invention relates to the technical field of SAW (Surface Acoustic Wave) device design, and particularly discloses an SAW (Surface Acoustic Wave) filter and a preparation method thereof. The IDT electrode is arranged on the surface of one side of the piezoelectric substrate and comprises a plurality of metal interdigital strips, a plurality of inner side false fingers, a plurality of outer side false fingers and a pair of bus bars, the metal interdigital strips are evenly distributed on the inner sides of the bus bars and form an interdigital structure, the inner side false fingers are located on the inner sides of the bus bars, and the ends of the inner side false fingers are opposite to the ends of the metal interdigital strips; the outer artificial finger is arranged on the outer side of the bus bar; each bus bar is arranged on the outer side of one bus bar and arranged opposite to the multiple outer side false finger end portions on the outer side of the bus bar, the distance between the outer side false finger end portions and the bus bars opposite to the outer side false finger end portions is smaller than the distance between the inner side false finger end portions and the finger bar end portions of the metal interdigital fingers opposite to the inner side false finger end portions, and therefore the ESD protection effect is improved.

The application belongs to the field of SAW device packaging and relates to a SAW device packaging structure and a preparation method thereof, which comprises the following steps: manufacturing a through hole on a POI wafer, manufacturing metal A in a packaging area of the POI wafer, manufacturing metal B in a packaging area of a cover plate, manufacturing a functional pattern 1 on a lower surface of the cover plate, manufacturing a through hole on the cover plate, manufacturing a functional pattern 2 above the through hole of the cover plate, manufacturing metal B below the through hole of the cover plate, metallurgically reacting the metal A, the metal B and the metal C in the packaging area of the cover plate to bond the cover plate above the POI wafer, metallurgically reacting the functional pattern 1 with an electrode above a signal hole and the metal C to realize conduction with the electrode, metallurgically reacting the functional pattern 2 with the metal B below the through hole of the cover plate, an interdigital transducer of the POI wafer and the metal C to realize conduction with the interdigital transducer, realizing airtight packaging of the cover plate and the POI wafer, and realizing electromagnetic shielding of the electrode and the interdigital transducer.

Certain aspects of the present disclosure are directed towards a SAW device. The SAW device may include a piezoelectric layer; an interdigital transducer (IDT) disposed above the piezoelectric layer and comprising a first electrode finger and a second electrode finger; and a first high-dielectric-constant (high-κ) material disposed between the first electrode finger and the second electrode finger, wherein a height of the first high-κ material above the piezoelectric layer is more than 60% of a height of the first electrode finger or the second electrode finger above the piezoelectric layer.

A piezoelectric composite substrate for a SAW device having small loss is provided. A composite substrate for a surface acoustic wave device according to one embodiment of the present invention has a piezoelectric single crystal thin film, a support substrate, and a first intermediate layer between the piezoelectric single crystal thin film and the support substrate. In the composite substrate, the first intermediate layer is in contact with the piezoelectric single crystal thin film, and a sound velocity of a transverse wave in the first intermediate layer is faster than a fast transverse wave in the piezoelectric single crystal thin film.

The invention provides a piezoelectric substrate, a preparation method thereof and a surface acoustic wave device. The piezoelectric substrate comprises a first piezoelectric layer, a wave-absorbing loss layer and a second piezoelectric layer, and in the first direction, the first piezoelectric layer, the wave-absorbing loss layer and the second piezoelectric layer are stacked to form a sandwich structure; the sandwich structure is provided with a first surface and a second surface which are opposite in a first direction, and the wave-absorbing loss layer is used for absorbing body waves; wherein the body waves comprise a first type of body waves and / or a second type of body waves, and the first type of body waves are sound waves entering the sandwich structure from the first surface; and the second type of bulk waves are sound waves entering the sandwich structure from the second surface. The piezoelectric substrate can inhibit the interference phenomenon of bulk wave spurious signals entering from one surface on the surface acoustic wave transmitted on the other surface, so that the out-of-band rejection effect of the surface acoustic wave device can be improved, the insertion loss of the surface acoustic wave device can be reduced, and the passband of the surface acoustic wave device can be smoothed. And the performance of the surface acoustic wave device is good.

This invention discloses an in vivo sperm processing device, control method, and application based on surface acoustic wave (SAW) devices. The non-invasive in vivo sperm processing method based on SAW devices offers significant advantages: it avoids the trauma risks of surgical and acupuncture treatments and solves the problem of unstable effects from hormone therapy and antioxidant therapy. By precisely controlling SAW parameters, this invention significantly improves sperm motility. It is simple to operate, low in cost, and highly safe, and applicable to various types of oligospermia and asthenospermia, providing a highly efficient, non-invasive, and widely applicable new solution for the research and treatment of oligospermia and asthenospermia.

This invention relates to the field of microelectronic device technology and discloses a surface acoustic wave (SAW) device and its fabrication method. The device includes a substrate layer, an electrode layer, a bridging layer, and a protective structure. The electrode layer is disposed on the substrate layer and includes multiple transducer units with transducer structures and connection terminals. The bridging layer is disposed on the electrode layer and located on one side of the connection terminal. The bridging layer is electrically connected to at least a portion of the connection terminal and electrically isolated from at least a portion of the connection terminal. The protective structure is disposed between the electrically isolated connection terminal and the bridging layer and includes an insulating layer and a blocking layer disposed on at least one side surface of the insulating layer. In this invention, the protective structure includes a blocking layer with a diffusion coefficient lower than that of the insulating layer, forming a dense physical barrier on the surface of the insulating layer. This physically alters the interaction between particles and the surface of the contact film layer, simultaneously suppressing particle adhesion and blocking electrode metal diffusion, thus ensuring the performance and reliability of the SAW device.

The invention provides a multi-layer SAW device capable of suppressing spurious response, and aims to solve the problems that the quality factor and electromechanical coupling coefficient of the device are reduced and in-band ripple and insertion loss are deteriorated due to the fact that a traditional multi-layer SAW device easily generates spurious response when the device works, a mass block layer is deposited above a part of an IDT layer of the traditional multi-layer SAW device, and the quality factor and the electromechanical coupling coefficient of the device are reduced. By changing the length and height parameters of the mass block, observing the suppression degree of the original spurious response in the admittance frequency response, selecting several parameters with better suppression effects, further comparing the electromechanical coupling coefficient with the quality factor, and finally obtaining the optimal length and height parameters of the added mass block after comprehensive comparison. While the stray response suppression effect on the original traditional multilayer SAW device is good, the electromechanical coupling coefficient and the quality factor at the resonant frequency of the SAW device are basically kept unchanged, and the quality factor at the anti-resonant frequency of the SAW device is increased.

A SAW device (10) has: a piezoelectric body plate (11) which is a plate material including a piezoelectric body, and includes a tilt polarization region (11X) including a plurality of small regions (11N) having substantially the same width in one direction parallel to a surface of the plate material, at each of the plurality of small regions, polarization of the piezoelectric body is tilted from a direction perpendicular to the surface of the plate material toward the one direction, and, at adjacent small regions, the polarization is alternately reversed; and a pair of electrodes (12) provided to cover the tilt polarization region, and sandwich a surface back of the piezoelectric body plate.

A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source / drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source / drain electrodes and the active layer and between the other one of two source / drain electrodes and the active layer.

The utility model relates to an elastic wave device and a module. The tail end of an electrode finger of the elastic wave device is provided with an extension part; the joint of the extension part and the tail end of the electrode finger is observed from the direction perpendicular to the main surface of the piezoelectric substrate, and the length is larger than the width of the electrode finger. According to the elastic wave device, the forming material of the extension part is different from the forming material of the electrode fingers, the problem that the filtering performance of the elastic wave device is poor due to the fact that a high-frequency and high-power SAW device has large clutters is solved, and the clutters are effectively restrained.

A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source / drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source / drain electrodes and the active layer and between the other one of two source / drain electrodes and the active layer.

The invention discloses a surface acoustic wave device and a preparation method thereof. The surface acoustic wave device comprises a supporting substrate, a piezoelectric layer and an electrode layer which are stacked in sequence, a first groove is formed in the surface of one side, close to the piezoelectric layer, of the supporting substrate; the first groove array is arranged on the surface of the supporting substrate and partially penetrates through the supporting substrate; a second groove is formed in the surface of one side, close to the supporting substrate, of the piezoelectric layer; the second groove array is arranged on the surface of the piezoelectric layer and partially penetrates through the piezoelectric layer; the projection of the first groove on the first plane is overlapped with the projection of the electrode layer on the first plane along the thickness direction of the surface acoustic wave device; the projection of the second groove on the first plane is overlapped with the projection of the electrode layer on the first plane. According to the technical scheme provided by the invention, the propagation and interference modes of the body wave in the composite substrate are destroyed by using the groove, and the body wave reflection enhancement effect at the interface of the composite substrate is inhibited, so that the body wave response is effectively inhibited, and the quality of the surface acoustic wave device is improved.