47 results about "Saw (device)" patented technology

A SAW device includes an IDT which is provided on the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, |ψ|≠90°×n (where n=0, 1, 2, 3)) and excites a Rayleigh wave (wavelength: λ) in a stopband upper end mode. Inter-electrode-finger grooves are recessed between electrode fingers of the IDT. An IDT line occupancy η and an inter-electrode-finger groove depth G satisfy a predetermined relationship in terms of the wavelength λ, such that the SAW device has a frequency-temperature characteristic of a cubic curve having an inflection point between a maximum value and a minimum value in an operation temperature range. The inflection point is adjustable to a desired temperature or a desired temperature range depending on the IDT line occupancy η within an operation temperature range.

A SAW device has an IDT which is provided in the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, |ψ|≠90°×n (where n=0, 1, 2, 3)) and excites a Rayleigh wave (wavelength: λ) in a stopband upper end mode. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT. The depth G of the inter-electrode-finger grooves is 0.01λ≦G≦0.07λ, and an electrode finger thickness H and an IDT line occupancy η satisfy a predetermined relationship. Thus, a frequency-temperature characteristic constantly has an inflection point between a maximum value and a minimum value in an operation temperature range, thereby suppressing a fluctuation in an inflection-point temperature due to a manufacturing variation in the IDT line occupancy η.

A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top surface of a device wafer, a cap wafer which is bonded with a top surface of the SAW device and has a viahole penetrating the cap wafer, and a conductive member to fill a part of the viahole. The viahole has a first via portion and a second via portion, the first via portion has a gradually smaller diameter from a bottom surface of the cap wafer until a certain depth, and the second via portion has a gradually greater diameter from the first via portion until a top surface of the cap wafer.

The present disclosure provides systems and methods for scalable and parallel computation of hierarchical cascading in finite element method (FEM) simulations of surface acoustic wave (SAW) devices. Different computing units of a cluster or cloud service may be assigned to independently model different core blocks or combinations of core blocks for iterative cascading to generate a model of the SAW devices. Similarly, frequency ranges may independently be assigned to computing units for modeling and analysis of devices, drastically speeding up computation.

The invention relates to a LiNbO3/SiO2/diamond multilayer piezoelectric film and a preparation method thereof, efficiently solving the problems of the temperature stability of surface acoustic wave (SAW) devices and preparation of high c-axis orientated LiNbO3 thin film. The technical scheme of the invention is as follows: an amorphous SiO2 buffering layer is introduced between a diamond substrate and a LiNbO3 piezoelectric thin film. The preparation method comprises the following steps of: firstly, taking silicon as a target material on the diamond substrate, and depositing the amorphous SiO2 on the diamond substrate by a pulse laser deposition method to form an amorphous SiO2 buffering layer; secondly, heating the prepared amorphous SiO2/diamond substrate, taking the LiNbO3 as the target material, and depositing the LiNbO3 on the amorphous SiO2 buffering layer by the pulse lasers to form a composite piezoelectric thin film having the amorphous SiO2 buffering layer between the LiNbO3 piezoelectric thin film layer and the diamond substrate; and cooling down the layer to 18-25 DEG C after the LiNbO3 piezoelectric thin film layer is deposited. The invention has simple structure, advanced and scientific method and high temperature stability, and improves the working frequency of the SAW devices.

The invention relates to the field of manufacturing of SAW (Surface Acoustic Wave) devices, in particular to a high-frequency SAW device based on a Si substrate and a manufacturing method thereof. The high-frequency SAW device has a multilayer membrane structure, and comprises the Si substrate, a high-acoustic-speed layer, a piezoelectric layer and interdigital transducers in sequence from bottom to top. A back side of the Si substrate is provided with slots, so that transmission of surface acoustic waves is limited in the high-acoustic-speed layer in order to increase the center frequency of the device. The SAW device with the multi-membrane structure can satisfy high-frequency and high electromechanical coupling coefficients and meet the application demands in the field of integrated circuits. Compared with a piezoelectric single-crystal material, a piezoelectric membrane adopted in the piezoelectric layer is easy to integrate, and can be applied to the semiconductor industry.

A filter including a piezoelectric substrate; a surface acoustic wave (SAW) device on the piezoelectric substrate and including unequally spaced interdigitated input and output transducer electrodes of unequal widths, wherein the input transducer electrodes are to convert an incoming radio frequency (RF) electrical signal into surface acoustic waves; a SAW propagation path between the input and output transducer electrodes; and a magnetostrictive film in the SAW propagation path to filter the surface acoustic waves that are at a ferromagnetic resonance frequency of the magnetostrictive film, wherein the output transducer electrodes are to convert the filtered surface acoustic waves into an outgoing electrical RF signal. The SAW device may operate in a wide-band pass configuration. The wide-band pass configuration result in a transmission of frequencies up to −60 dB. The magnetostrictive film may include a ferromagnetic material. The interdigitated input and output transducer electrodes may include unequal widths between adjacent electrodes.

A SAW device D1 according to the present invention comprises a ladder-type SAW device T1 for transmission and a ladder-type SAW device R2 for receiving on a main surface of a piezoelectric substrate. The ratio (LT/PT) of the width LT of electrode fingers to the pitch PT between the electrode fingers in a SAW resonator S1 in the ladder-type SAW device T1 for transmission is made lower than the ratio (LR/PR) of the width LR of electrode fingers to the pitch PR between the electrode fingers in a SAW resonator S2 in the ladder-type SAW device R2 for receiving. As a result, the SAW device D1 has a low loss within a band and has steep attenuation characteristics outside the band, and is miniaturized.

The embodiments herein relate to surface acoustic wave (SAW) devices, such as filters and duplexers. The SAW device may have a high acoustic velocity layer and a piezoelectric layer coupled to the high acoustic velocity layer. At least one transducer is coupled at least to the piezoelectric layer, where the transducer propagates a surface acoustic wave having an operating wavelength along a surface of the piezoelectric layer. A metallic layer may be coupled to the surface of the piezoelectric layer and electrically isolated from the transducer.

The invention relates to an SAW device comprising mixed weighted reflecting gratings and the mixed weighted reflecting gratings, and belongs to the technical field of radio frequency filtering, the SAW device comprises a piezoelectric substrate, an interdigital transducer and two mixed weighted reflecting gratings, the interdigital transducer and the two mixed weighted reflecting gratings are arranged on the piezoelectric substrate, each mixed weighted reflecting grating comprises a plurality of reflecting grating electrodes which are distributed at equal intervals, and the reflecting grating electrodes are arranged on the piezoelectric substrate. The lengths and the widths of the plurality of reflecting gate electrodes are gradually reduced in a preset direction, and the preset direction is a direction far away from the interdigital transducer. Therefore, according to the invention, the mixed weighted reflecting grating is arranged to be a plurality of reflecting grating electrodes which are distributed at equal intervals, and the lengths and the widths of the plurality of reflecting grating electrodes are gradually reduced in the direction far away from the interdigital transducer, so that a mixed weighted structure combining width gradual-change weighting and apodization weighting is formed; the transverse clutter generated in the SAW device can be suppressed under a more compact structure, the clutter suppression performance is improved, the frequency response characteristic of the SAW device is improved, and then the Q value of the SAW device is improved.

A surface acoustic wave (SAW) device including a piezoelectric layer, a high acoustic velocity layer coupled to the piezoelectric layer, and at least one transducer. The SAW device may include a multi-layer graphene layer in the electrodes of at least one of the transducer and in a conductive layer that is coupled to the piezoelectric layer.

A SAW device having a stacked design of functional layers is proposed that is build up on a carrier substrate (SUB) that is chosen to provide a high acoustic velocity. The stack further comprises a thin TCF compensation layer (TCL), a thin film piezoelectric layer (PEL) and a set of interdigital electrodes (IDE) on top of the piezoelectric layer. Energy of the desired mode mainly in the high acoustic velocity material. Despite the high possible operating frequencies the SAW device can reliably be manufactured with present lithographic techniques.

This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better heat dissipation and heat sinking. Preferably the shunt lines of the ladder type arrangement of SAW resonators (RS1, RS2, RS3) comprise a broadened section (BBCN). Each two series resonators (RS1, RS2, RS3) that are subsequent to each other in the series signal line are connected via a common busbar (BBCN) extending over a whole length of that subsequent series resonators, a lateral extension of the common busbars represents a first section of a respective shunt line each, each first shunt line section between a node and the parallel resonator (RP1, RP2) of a shunt line (SLS1) comprises a broadened section (BS) that is broader than the common busbar, the broadened section extends over the whole width of the parallel resonator (RP1), the first reflector (REF1) of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section (BS).

A surface acoustic wave (SAW) device (200), the SAW device (200) includes a piezoelectric layer (304) and a transducer (204,206) having a plurality of electrodes (214). The electrodes (214) are aligned with respective longitudinal axes parallel to each other and perpendicular to a wave propagation direction (220). Each electrode (214) includes a conductive first layer (216) having a first thickness and a first width in the wave propagation direction; and a conductive second layer (218) having a second thickness that is negligible compared to the first thickness. The first layer (216) and second layer (218) are in electrical contact with each other to provide electrical conduction over a total width of the electrode (214) in the wave propagation direction (220), the total width being greater than the first width of the first layer (216).