76 results about "Saw (device)" patented technology

Certain aspects of present disclosure are directed towards a surface acoustic wave (SAW) device. The SAW device may include a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer and comprising an electrode including: a first aluminum (Al)-copper (Cu) layer; a second Al—Cu layer; a first barrier layer between the first Al—Cu layer and the second Al—Cu layer; a third Al—Cu layer; and a second barrier layer between the second Al—Cu layer and the third Al—Cu layer.

A surface acoustic wave (SAW) device including resonators formed on piezoelectric substrates of different heights and a method for manufacturing the same are provided. The SAW device includes: a support substrate; a piezoelectric substrate disposed on the support substrate and including a first region, a second region, and a step region disposed between the first and second regions; a first resonator formed on the first region of the piezoelectric substrate; a second resonator formed on the second region of the piezoelectric substrate; and a bus bar formed on the step region of the piezoelectric substrate. The piezoelectric substrate has different thicknesses between the first and second regions, and a surface of the step region connecting the first and second regions forms an angle of 60 degrees or less with the top surface of the first or second region.

The invention discloses a filter and a radio frequency front-end module, and relates to the technical field of radio frequency filtering. The filter comprises a piezoelectric substrate, a first resonator, a second resonator and a dielectric layer. The first resonator and the second resonator are both arranged on the piezoelectric substrate, the first resonator is arranged on one side of the second resonator, a spacing area is formed between the first resonator and the second resonator, and the first resonator and the second resonator both comprise interdigital transducers; the dielectric layer is at least arranged in the spacer region; wherein the propagation speed of sound waves in the dielectric layer is greater than that of the sound waves in the interdigital transducer. According to the invention, surface acoustic waves leaked by the surface acoustic wave devices can be converted into leaky waves, so that mutual interference between the surface acoustic wave devices is effectively reduced, and the performance of the filter is improved.

A piezoelectric composite substrate for SAW devices with small loss is provided. A composite substrate for a surface acoustic wave device according to one embodiment of the present invention has a piezoelectric single crystal thin film, a support substrate, and a first intervening layer between the piezoelectric single crystal thin film and the support substrate. In the composite substrate, the first intervening layer is in contact with the piezoelectric single crystal thin film, and the acoustic velocity of the transverse wave in the first intervening layer is faster than the acoustic velocity of the fast transverse wave in the piezoelectric single crystal thin film.

Improved surface acoustic wave structures (or elements) that can be used to realize any of a wide variety of dispersive or non-dispersive transversal SAW filters that are distinct from prior known means for producing such filters are disclosed. The devices and structures may include stepped acoustic wave delay modification elements that can be used to implement transversal filter impulse response functions in a manner analogous to the use of interdigital transducers. The structures disclosed are of particular usefulness to implement SAW devices at high frequencies where normal photolithographic resolution would prove limiting. Aspects and embodiments of the present invention would be useful to produce SAW devices for use in a wide variety of applications, including as components in cell phones, in radar and other communications and electronic systems, and as wired or wireless sensors or sensor-tags.

A compact and robust encapsulation system for protecting a surface wave device comprises a SAW device and a sealing joint, which seals a second substrate to the base substrate of the SAW device so as to form a cavity, and an antenna connection means arranged outside the cavity on the encapsulation system.

The present disclosure relates to a surface acoustic wave (SAW) device with robust metal structures, which at least provide electrically low resistance and mechanically strong connections between different inter digital transducers (IDTs) within the SAW device. Each metal structure includes a metal base section that is formed from a same metal layer as corresponding IDTs, and a metal stack over the metal base section. The metal stack includes a bottom adhesive layer over the metal base section, a bottom conductive layer over the bottom adhesive layer, an intermediate adhesive layer over the bottom conductive layer, a top conductive layer over the intermediate adhesive layer, and a top adhesive layer over the top conductive layer. The bottom and top conductive layers have a higher electrical conductivity than each adhesive layer, while each adhesive layer has a stronger adhesion strength than the bottom and top conductive layers.

The invention relates to a SAW device with improved thermal management. The invention focuses on minimizing hot spots on filter chips by generating heat radiators using mechanical acoustic structures and connected circuitry. The metal-to-wafer relationship gradually increases to provide better heat dissipation and heat dissipation. Preferably, the shunt line of the stepped arrangement of the SAW resonators (RS1, RS2, RS3) comprises a widened section (BS). Every two series resonators (RS1, RS2, RS3) arranged one behind the other in the series signal line are connected via a common bus bar (BBCN) extending over the entire length of the subsequent series resonator, the lateral extension of the common bus bar representing a first portion of each respective shunt line, the node being connected to the parallel resonators (RP1, RP2, RP2) of the shunt line (SLS1). Each first shunt line portion between the series resonators (RP1, RP2) comprises a widened section (BS) wider than the common bus bar, the widened section extending over the entire width of the parallel resonator (RP1), the first reflector (REF1) of the parallel resonator facing the laterally adjacent series resonators being formed by the widened section (BS).

This invention discloses a surface acoustic wave (SAW) device, comprising: a resonant filter element including multiple parallel resonators, one end of which is connected to at least one ground port; wherein at least two of the parallel resonators are connected to the same ground port, and the ground port connected to the at least two parallel resonators is a common ground port; and a packaging substrate located on one side of the resonant filter element; the packaging substrate includes a first substrate, which includes a common ground region and at least one independent cut-out region; the independent cut-out region is correspondingly disposed to at least one of the common ground ports and connected to the corresponding common ground port; the independent cut-out region is connected to the common ground region through a connecting portion, the extension direction of which is perpendicular to the SAW propagation direction of the SAW device. This invention improves the isolation performance of the device.

The application relates to the technical field of surface acoustic wave devices, in particular to a structure and method for suppressing bulk acoustic wave interference in a multilayer SAW resonator, which comprises a support substrate, a bonding layer, a piezoelectric layer and an interdigital transducer, a reflective grating and an RF signal pad arranged in sequence from bottom to top; wherein an acoustic impedance matching and attenuating layer is arranged between the RF signal pad and the piezoelectric layer, and the acoustic impedance matching and attenuating layer is a single dielectric layer or a periodic multilayer film alternately stacked by two or more dielectric materials with different acoustic characteristics, and the material of the single dielectric layer is silicon dioxide or doped silicon dioxide. The application sets the acoustic impedance matching and attenuating layer between the RF signal pad and the piezoelectric layer, so as to effectively absorb and scatter the bulk acoustic wave energy generated below the pad, convert the bulk acoustic wave energy into heat energy, significantly weaken the bulk acoustic wave intensity, and improve the overall performance and consistency of the SAW device in high-frequency communication applications.

The thin-film SAW device includes a carrier substrate (CA), a TCF compensation layer (CL), a piezoelectric layer (PL), and an IDT electrode (EL) on top of the piezoelectric layer. A functional layer (FL) is arranged between the piezoelectric layer and the TCF compensation layer to further reduce the TCF. Taking into account the speed of sound, density, and stiffness, the material properties of the functional layer are matched to those of the piezoelectric layer, so that the material properties of the functional layer and the piezoelectric layer do not deviate from each other by more than 10% in the absence of the piezoelectric effect. The functional layer can have the same crystal structure as the useful piezoelectric layer without piezoelectric properties.

A radio-frequency module includes: plural electronic components that include plural bare SAW devices and that are disposed between a major surface of a module substrate and a major surface of a module substrate, on a major surface of the module substrate, and on a major surface of the module substrate; plural external connection terminals disposed on the major surface; and resin members. The resin member covers the plural SAW devices but does not fill between central regions of the plural bare SAW devices in which the IDT electrodes are disposed and the major surface to which plural bump electrodes are joined. The plural bare SAW devices are disposed on the major surface, and no bare SAW devices are disposed between the major surfaces and on the major surface.

A surface acoustic wave (SAW) device includes a piezoelectric layer, a high acoustic velocity layer coupled with the piezoelectric layer, and at least one transducer. The SAW device can include a multi-layer graphene layer in an electrode of the at least one transducer and a multi-layer graphene layer in a conductive layer coupled with the piezoelectric layer.

Interdigital transducer (IDT) and reflective structure arrangements for surface acoustic wave (SAW) devices are disclosed. Representative SAW devices are described herein with reduced overall size while maintaining good quality factors. In certain embodiments, a SAW device may include an IDT arranged between reflective structures on a piezoelectric material. The reflective structures may include reflective IDTs that are configured to have a phase difference with the IDT to reflect and confine acoustic waves in the piezoelectric material. In certain embodiments, the reflective structures may be electrically connected to at least one of an input signal or an output signal. In this manner, the reflective structures may be configured with reduced size as compared to conventional reflective structures such as gratings, thereby providing a SAW device with reduced dimensions without a negative impact on device performance.

This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better heat dissipation and heat sinking. Preferably the shunt lines of the ladder type arrangement of SAW resonators (RS1, RS2, RS3) comprise a broadened section (BBCN). Each two series resonators (RS1, RS2, RS3) that are subsequent to each other in the series signal line are connected via a common busbar (BBCN) extending over a whole length of that subsequent series resonators, a lateral extension of the common busbars represents a first section of a respective shunt line each, each first shunt line section between a node and the parallel resonator (RP1, RP2) of a shunt line (SLS1) comprises a broadened section (BS) that is broader than the common busbar, the broadened section extends over the whole width of the parallel resonator (RP1), the first reflector (REF1) of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section (BS).

Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device. The SAW device may include a piezoelectric layer, and an interdigital transducer (IDT) disposed above the piezoelectric layer. The IDT may include a plurality of fingers. A cap layer may be disposed above the IDT. A cavity may be formed between the IDT and the cap layer. A material such as sulfur hexafluoride (SF6) may be disposed above and between the plurality of fingers of the IDT within the cavity.

The invention relates to the technical field of filters, and discloses an SAW device and a preparation method thereof, and the method comprises the steps: providing a piezoelectric substrate, and forming a projection array structure in a preset region of the piezoelectric substrate; forming a first dielectric layer covering the bulge array structure on the piezoelectric substrate; providing a supporting substrate, and forming a second dielectric layer on the supporting substrate; bonding the first dielectric layer and the second dielectric layer face to face; an interdigital electrode is formed on the side, away from the protrusion array structure, of the piezoelectric substrate, and the cross tail end of the interdigital electrode corresponds to protrusions in the protrusion array structure. Transverse clutters are suppressed, and the performance of the device is improved.

A surface acoustic wave device (5) is provided using a layered substrate system with a special material and a special cut of a piezoelectric thin film (4) selected for utilizing Rayleigh mode. The proper choice of the material and the cut of the piezoelectric thin film leads to a low velocity of the excited wave mode, which allows the usage of smaller devices without deteriorating other performance parameters according to specifications.

The present invention relates to a surface acoustic wave (SAW) device with no spurious mode, which can be used efficiently in radio frequency (RF) filters and multiplexers (either alone or in conjunction with similar or other SAW devices), in particular to a surface acoustic wave (SAW) device with no spurious mode, which can be used in both radio frequency (RF) filters and multiplexers. Different from a traditional SAW device, the SAW device provided by the invention uses a yttrium aluminum garnet (YAG) substrate instead of a Si substrate. The dielectric layer and the piezoelectric layer are sequentially arranged on the top surface of the YAG substrate, and the IDT is arranged on the piezoelectric layer. The YAG substrate is characterized in that the rear surface thereof has an arithmetic mean roughness Ra greater than 50 nm. By using the YAG substrate (i.e., with such Ra) in the SAW device, efficient spurious mode suppression can be provided (at least) in a frequency range from 0.5 GHz to 2.7 GHz.

Aspects herein include minimizing hot spots on a filter chip by creating thermal radiators using mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation provides better heat dissipation and heat sinking. Shunt lines of a ladder type arrangement of SAW resonators comprise a broadened section. Resonators that are subsequent to each other in the series signal line are connected via a common busbar extending over a length of subsequent series resonators. A lateral extension of the common busbars represents a first section of a respective shunt line. A first shunt line section between a node and the parallel resonator of a shunt line comprises a section that is broader than the common busbar, the broadened section extending over the width of the parallel resonator. The first reflector of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section.

The invention provides a method and a system for blocking splashes. The method for blocking the splashes comprises the following steps: constructing a passivation layer; the passivation layer is arranged on the surface of the SAW device; and the passivation layer is used for blocking splash. According to the technical scheme, the reliability of the device is improved, and the device is protected from being influenced by splashes.

The present invention relates to the field of surface acoustic wave (SAW) devices. Specifically, the SAW device of the present invention suppresses parasitic modes, specifically transverse modes. The SAW device of the present invention comprises: a piezoelectric layer (101) for propagating SAW; at least one electrode (102) arranged on the piezoelectric layer and used to couple an electrical signal to the SAW propagating in the piezoelectric layer (101). The SAW device also comprises at least one busbar (103) for routing the electrical signal to the electrode (102). The SAW device also comprises a decoupling layer (104) that separates the piezoelectric layer (101) and the electrode (102) from the busbar (103). The decoupling layer (104) has an acoustic impedance different from that of the electrode (102) and the busbar (103).

An oscillating saw assembly (100) and an oscillating saw device. The oscillating saw assembly (100) comprises an oscillating saw blade (1) and a sheath plate (2). The oscillating saw blade (1) comprises a main body portion (11) and a sawtooth portion (12) connected to one end of the main body portion (11). The sheath plate (2) comprises a first cover plate (21) and a second cover plate (22) which are stacked and fixed to each other by welding, the first cover plate (21) and the second cover plate (22) define an accommodating space (4), the main body portion (11) is arranged in the accommodating space (4) in an oscillating manner, and the sawtooth portion (12) extends from one end of the accommodating space (4). The sheath plate (2) has a front end portion (51) and a rear end portion (52), and the width of the rear end portion (52) is greater than the width of the front end portion (51).

The invention relates to the technical field of SAW (Surface Acoustic Wave) device design, and particularly discloses an SAW (Surface Acoustic Wave) filter and a preparation method thereof. The IDT electrode is arranged on the surface of one side of the piezoelectric substrate and comprises a plurality of metal interdigital strips, a plurality of inner side false fingers, a plurality of outer side false fingers and a pair of bus bars, the metal interdigital strips are evenly distributed on the inner sides of the bus bars and form an interdigital structure, the inner side false fingers are located on the inner sides of the bus bars, and the ends of the inner side false fingers are opposite to the ends of the metal interdigital strips; the outer artificial finger is arranged on the outer side of the bus bar; each bus bar is arranged on the outer side of one bus bar and arranged opposite to the multiple outer side false finger end portions on the outer side of the bus bar, the distance between the outer side false finger end portions and the bus bars opposite to the outer side false finger end portions is smaller than the distance between the inner side false finger end portions and the finger bar end portions of the metal interdigital fingers opposite to the inner side false finger end portions, and therefore the ESD protection effect is improved.

To provide a band saw device 10 that can remove dust adhering to a band saw 16 without using consumables such as brushes and rubber scrapers and that can prevent the deterioration in an operation rate caused by replacement work of consumables.SOLUTION: A band saw device includes a base 11 provided with a vice 21 for fixing a workpiece 40, and a frame 12 assembled on the base 11 with a frame rotation shaft 13 as a fulcrum in a manner that it can be raised up and lowered down. The band saw device cuts the workpiece 40 by raising the frame 12 and fixing the workpiece 40 to the base 11 with the vice 21, and then lowering the frame 12 onto the base 11 and pressing a band saw blade exposed to a cutting opening 12c against the workpiece 40. An air passage 12d is formed inside the frame 12 to guide air from a cooling fan 20 to a band saw 16 traveling on the cutting opening 12c, and dust adhering to the band saw 16 is blown away by air from the cooling fan 20 to be discharged outside the frame 12.SELECTED DRAWING: Figure 4

A SAW device (10) comprises: a piezoelectric body plate (11) that is a plate member made of a piezoelectric body, the piezoelectric body plate (11) including an inclined polarization region (11X) composed of a plurality of small regions (11N) that have substantially the same width in one direction parallel to the surface of the plate member, and being such that, in each of the plurality of small regions, the polarization of the piezoelectric body is inclined in the one direction from a direction perpendicular to the surface of the plate, and the polarization is alternately reversed in adjacent small regions; and a pair of electrodes (12) that cover the inclined polarization region and are provided so as to sandwich the front and rear of the piezoelectric body plate.

The application belongs to the field of SAW device packaging and relates to a SAW device packaging structure and a preparation method thereof, which comprises the following steps: manufacturing a through hole on a POI wafer, manufacturing metal A in a packaging area of the POI wafer, manufacturing metal B in a packaging area of a cover plate, manufacturing a functional pattern 1 on a lower surface of the cover plate, manufacturing a through hole on the cover plate, manufacturing a functional pattern 2 above the through hole of the cover plate, manufacturing metal B below the through hole of the cover plate, metallurgically reacting the metal A, the metal B and the metal C in the packaging area of the cover plate to bond the cover plate above the POI wafer, metallurgically reacting the functional pattern 1 with an electrode above a signal hole and the metal C to realize conduction with the electrode, metallurgically reacting the functional pattern 2 with the metal B below the through hole of the cover plate, an interdigital transducer of the POI wafer and the metal C to realize conduction with the interdigital transducer, realizing airtight packaging of the cover plate and the POI wafer, and realizing electromagnetic shielding of the electrode and the interdigital transducer.

Certain aspects of the present disclosure are directed towards a SAW device. The SAW device may include a piezoelectric layer; an interdigital transducer (IDT) disposed above the piezoelectric layer and comprising a first electrode finger and a second electrode finger; and a first high-dielectric-constant (high-κ) material disposed between the first electrode finger and the second electrode finger, wherein a height of the first high-κ material above the piezoelectric layer is more than 60% of a height of the first electrode finger or the second electrode finger above the piezoelectric layer.

A piezoelectric composite substrate for a SAW device having small loss is provided. A composite substrate for a surface acoustic wave device according to one embodiment of the present invention has a piezoelectric single crystal thin film, a support substrate, and a first intermediate layer between the piezoelectric single crystal thin film and the support substrate. In the composite substrate, the first intermediate layer is in contact with the piezoelectric single crystal thin film, and a sound velocity of a transverse wave in the first intermediate layer is faster than a fast transverse wave in the piezoelectric single crystal thin film.