34 results about "Saw (device)" patented technology

A surface acoustic wave (SAW) device including resonators formed on piezoelectric substrates of different heights and a method for manufacturing the same are provided. The SAW device includes: a support substrate; a piezoelectric substrate disposed on the support substrate and including a first region, a second region, and a step region disposed between the first and second regions; a first resonator formed on the first region of the piezoelectric substrate; a second resonator formed on the second region of the piezoelectric substrate; and a bus bar formed on the step region of the piezoelectric substrate. The piezoelectric substrate has different thicknesses between the first and second regions, and a surface of the step region connecting the first and second regions forms an angle of 60 degrees or less with the top surface of the first or second region.

The invention discloses a filter and a radio frequency front-end module, and relates to the technical field of radio frequency filtering. The filter comprises a piezoelectric substrate, a first resonator, a second resonator and a dielectric layer. The first resonator and the second resonator are both arranged on the piezoelectric substrate, the first resonator is arranged on one side of the second resonator, a spacing area is formed between the first resonator and the second resonator, and the first resonator and the second resonator both comprise interdigital transducers; the dielectric layer is at least arranged in the spacer region; wherein the propagation speed of sound waves in the dielectric layer is greater than that of the sound waves in the interdigital transducer. According to the invention, surface acoustic waves leaked by the surface acoustic wave devices can be converted into leaky waves, so that mutual interference between the surface acoustic wave devices is effectively reduced, and the performance of the filter is improved.

The present disclosure relates to a surface acoustic wave (SAW) device with robust metal structures, which at least provide electrically low resistance and mechanically strong connections between different inter digital transducers (IDTs) within the SAW device. Each metal structure includes a metal base section that is formed from a same metal layer as corresponding IDTs, and a metal stack over the metal base section. The metal stack includes a bottom adhesive layer over the metal base section, a bottom conductive layer over the bottom adhesive layer, an intermediate adhesive layer over the bottom conductive layer, a top conductive layer over the intermediate adhesive layer, and a top adhesive layer over the top conductive layer. The bottom and top conductive layers have a higher electrical conductivity than each adhesive layer, while each adhesive layer has a stronger adhesion strength than the bottom and top conductive layers.

This invention discloses a surface acoustic wave (SAW) device, comprising: a resonant filter element including multiple parallel resonators, one end of which is connected to at least one ground port; wherein at least two of the parallel resonators are connected to the same ground port, and the ground port connected to the at least two parallel resonators is a common ground port; and a packaging substrate located on one side of the resonant filter element; the packaging substrate includes a first substrate, which includes a common ground region and at least one independent cut-out region; the independent cut-out region is correspondingly disposed to at least one of the common ground ports and connected to the corresponding common ground port; the independent cut-out region is connected to the common ground region through a connecting portion, the extension direction of which is perpendicular to the SAW propagation direction of the SAW device. This invention improves the isolation performance of the device.

The application relates to the technical field of surface acoustic wave devices, in particular to a structure and method for suppressing bulk acoustic wave interference in a multilayer SAW resonator, which comprises a support substrate, a bonding layer, a piezoelectric layer and an interdigital transducer, a reflective grating and an RF signal pad arranged in sequence from bottom to top; wherein an acoustic impedance matching and attenuating layer is arranged between the RF signal pad and the piezoelectric layer, and the acoustic impedance matching and attenuating layer is a single dielectric layer or a periodic multilayer film alternately stacked by two or more dielectric materials with different acoustic characteristics, and the material of the single dielectric layer is silicon dioxide or doped silicon dioxide. The application sets the acoustic impedance matching and attenuating layer between the RF signal pad and the piezoelectric layer, so as to effectively absorb and scatter the bulk acoustic wave energy generated below the pad, convert the bulk acoustic wave energy into heat energy, significantly weaken the bulk acoustic wave intensity, and improve the overall performance and consistency of the SAW device in high-frequency communication applications.

A surface acoustic wave (SAW) device includes a piezoelectric layer, a high acoustic velocity layer coupled with the piezoelectric layer, and at least one transducer. The SAW device can include a multi-layer graphene layer in an electrode of the at least one transducer and a multi-layer graphene layer in a conductive layer coupled with the piezoelectric layer.

This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better heat dissipation and heat sinking. Preferably the shunt lines of the ladder type arrangement of SAW resonators (RS1, RS2, RS3) comprise a broadened section (BBCN). Each two series resonators (RS1, RS2, RS3) that are subsequent to each other in the series signal line are connected via a common busbar (BBCN) extending over a whole length of that subsequent series resonators, a lateral extension of the common busbars represents a first section of a respective shunt line each, each first shunt line section between a node and the parallel resonator (RP1, RP2) of a shunt line (SLS1) comprises a broadened section (BS) that is broader than the common busbar, the broadened section extends over the whole width of the parallel resonator (RP1), the first reflector (REF1) of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section (BS).

The invention relates to the technical field of filters, and discloses an SAW device and a preparation method thereof, and the method comprises the steps: providing a piezoelectric substrate, and forming a projection array structure in a preset region of the piezoelectric substrate; forming a first dielectric layer covering the bulge array structure on the piezoelectric substrate; providing a supporting substrate, and forming a second dielectric layer on the supporting substrate; bonding the first dielectric layer and the second dielectric layer face to face; an interdigital electrode is formed on the side, away from the protrusion array structure, of the piezoelectric substrate, and the cross tail end of the interdigital electrode corresponds to protrusions in the protrusion array structure. Transverse clutters are suppressed, and the performance of the device is improved.

A surface acoustic wave device (5) is provided using a layered substrate system with a special material and a special cut of a piezoelectric thin film (4) selected for utilizing Rayleigh mode. The proper choice of the material and the cut of the piezoelectric thin film leads to a low velocity of the excited wave mode, which allows the usage of smaller devices without deteriorating other performance parameters according to specifications.

An oscillating saw assembly (100) and an oscillating saw device. The oscillating saw assembly (100) comprises an oscillating saw blade (1) and a sheath plate (2). The oscillating saw blade (1) comprises a main body portion (11) and a sawtooth portion (12) connected to one end of the main body portion (11). The sheath plate (2) comprises a first cover plate (21) and a second cover plate (22) which are stacked and fixed to each other by welding, the first cover plate (21) and the second cover plate (22) define an accommodating space (4), the main body portion (11) is arranged in the accommodating space (4) in an oscillating manner, and the sawtooth portion (12) extends from one end of the accommodating space (4). The sheath plate (2) has a front end portion (51) and a rear end portion (52), and the width of the rear end portion (52) is greater than the width of the front end portion (51).

The invention relates to the technical field of SAW (Surface Acoustic Wave) device design, and particularly discloses an SAW (Surface Acoustic Wave) filter and a preparation method thereof. The IDT electrode is arranged on the surface of one side of the piezoelectric substrate and comprises a plurality of metal interdigital strips, a plurality of inner side false fingers, a plurality of outer side false fingers and a pair of bus bars, the metal interdigital strips are evenly distributed on the inner sides of the bus bars and form an interdigital structure, the inner side false fingers are located on the inner sides of the bus bars, and the ends of the inner side false fingers are opposite to the ends of the metal interdigital strips; the outer artificial finger is arranged on the outer side of the bus bar; each bus bar is arranged on the outer side of one bus bar and arranged opposite to the multiple outer side false finger end portions on the outer side of the bus bar, the distance between the outer side false finger end portions and the bus bars opposite to the outer side false finger end portions is smaller than the distance between the inner side false finger end portions and the finger bar end portions of the metal interdigital fingers opposite to the inner side false finger end portions, and therefore the ESD protection effect is improved.

The application belongs to the field of SAW device packaging and relates to a SAW device packaging structure and a preparation method thereof, which comprises the following steps: manufacturing a through hole on a POI wafer, manufacturing metal A in a packaging area of the POI wafer, manufacturing metal B in a packaging area of a cover plate, manufacturing a functional pattern 1 on a lower surface of the cover plate, manufacturing a through hole on the cover plate, manufacturing a functional pattern 2 above the through hole of the cover plate, manufacturing metal B below the through hole of the cover plate, metallurgically reacting the metal A, the metal B and the metal C in the packaging area of the cover plate to bond the cover plate above the POI wafer, metallurgically reacting the functional pattern 1 with an electrode above a signal hole and the metal C to realize conduction with the electrode, metallurgically reacting the functional pattern 2 with the metal B below the through hole of the cover plate, an interdigital transducer of the POI wafer and the metal C to realize conduction with the interdigital transducer, realizing airtight packaging of the cover plate and the POI wafer, and realizing electromagnetic shielding of the electrode and the interdigital transducer.

A piezoelectric composite substrate for a SAW device having small loss is provided. A composite substrate for a surface acoustic wave device according to one embodiment of the present invention has a piezoelectric single crystal thin film, a support substrate, and a first intermediate layer between the piezoelectric single crystal thin film and the support substrate. In the composite substrate, the first intermediate layer is in contact with the piezoelectric single crystal thin film, and a sound velocity of a transverse wave in the first intermediate layer is faster than a fast transverse wave in the piezoelectric single crystal thin film.

The invention provides a piezoelectric substrate, a preparation method thereof and a surface acoustic wave device. The piezoelectric substrate comprises a first piezoelectric layer, a wave-absorbing loss layer and a second piezoelectric layer, and in the first direction, the first piezoelectric layer, the wave-absorbing loss layer and the second piezoelectric layer are stacked to form a sandwich structure; the sandwich structure is provided with a first surface and a second surface which are opposite in a first direction, and the wave-absorbing loss layer is used for absorbing body waves; wherein the body waves comprise a first type of body waves and / or a second type of body waves, and the first type of body waves are sound waves entering the sandwich structure from the first surface; and the second type of bulk waves are sound waves entering the sandwich structure from the second surface. The piezoelectric substrate can inhibit the interference phenomenon of bulk wave spurious signals entering from one surface on the surface acoustic wave transmitted on the other surface, so that the out-of-band rejection effect of the surface acoustic wave device can be improved, the insertion loss of the surface acoustic wave device can be reduced, and the passband of the surface acoustic wave device can be smoothed. And the performance of the surface acoustic wave device is good.

This invention discloses an in vivo sperm processing device, control method, and application based on surface acoustic wave (SAW) devices. The non-invasive in vivo sperm processing method based on SAW devices offers significant advantages: it avoids the trauma risks of surgical and acupuncture treatments and solves the problem of unstable effects from hormone therapy and antioxidant therapy. By precisely controlling SAW parameters, this invention significantly improves sperm motility. It is simple to operate, low in cost, and highly safe, and applicable to various types of oligospermia and asthenospermia, providing a highly efficient, non-invasive, and widely applicable new solution for the research and treatment of oligospermia and asthenospermia.

This invention relates to the field of microelectronic device technology and discloses a surface acoustic wave (SAW) device and its fabrication method. The device includes a substrate layer, an electrode layer, a bridging layer, and a protective structure. The electrode layer is disposed on the substrate layer and includes multiple transducer units with transducer structures and connection terminals. The bridging layer is disposed on the electrode layer and located on one side of the connection terminal. The bridging layer is electrically connected to at least a portion of the connection terminal and electrically isolated from at least a portion of the connection terminal. The protective structure is disposed between the electrically isolated connection terminal and the bridging layer and includes an insulating layer and a blocking layer disposed on at least one side surface of the insulating layer. In this invention, the protective structure includes a blocking layer with a diffusion coefficient lower than that of the insulating layer, forming a dense physical barrier on the surface of the insulating layer. This physically alters the interaction between particles and the surface of the contact film layer, simultaneously suppressing particle adhesion and blocking electrode metal diffusion, thus ensuring the performance and reliability of the SAW device.

The invention provides a multi-layer SAW device capable of suppressing spurious response, and aims to solve the problems that the quality factor and electromechanical coupling coefficient of the device are reduced and in-band ripple and insertion loss are deteriorated due to the fact that a traditional multi-layer SAW device easily generates spurious response when the device works, a mass block layer is deposited above a part of an IDT layer of the traditional multi-layer SAW device, and the quality factor and the electromechanical coupling coefficient of the device are reduced. By changing the length and height parameters of the mass block, observing the suppression degree of the original spurious response in the admittance frequency response, selecting several parameters with better suppression effects, further comparing the electromechanical coupling coefficient with the quality factor, and finally obtaining the optimal length and height parameters of the added mass block after comprehensive comparison. While the stray response suppression effect on the original traditional multilayer SAW device is good, the electromechanical coupling coefficient and the quality factor at the resonant frequency of the SAW device are basically kept unchanged, and the quality factor at the anti-resonant frequency of the SAW device is increased.

A SAW device (10) has: a piezoelectric body plate (11) which is a plate material including a piezoelectric body, and includes a tilt polarization region (11X) including a plurality of small regions (11N) having substantially the same width in one direction parallel to a surface of the plate material, at each of the plurality of small regions, polarization of the piezoelectric body is tilted from a direction perpendicular to the surface of the plate material toward the one direction, and, at adjacent small regions, the polarization is alternately reversed; and a pair of electrodes (12) provided to cover the tilt polarization region, and sandwich a surface back of the piezoelectric body plate.

The utility model relates to an elastic wave device and a module. The tail end of an electrode finger of the elastic wave device is provided with an extension part; the joint of the extension part and the tail end of the electrode finger is observed from the direction perpendicular to the main surface of the piezoelectric substrate, and the length is larger than the width of the electrode finger. According to the elastic wave device, the forming material of the extension part is different from the forming material of the electrode fingers, the problem that the filtering performance of the elastic wave device is poor due to the fact that a high-frequency and high-power SAW device has large clutters is solved, and the clutters are effectively restrained.

The invention discloses a surface acoustic wave device and a preparation method thereof. The surface acoustic wave device comprises a supporting substrate, a piezoelectric layer and an electrode layer which are stacked in sequence, a first groove is formed in the surface of one side, close to the piezoelectric layer, of the supporting substrate; the first groove array is arranged on the surface of the supporting substrate and partially penetrates through the supporting substrate; a second groove is formed in the surface of one side, close to the supporting substrate, of the piezoelectric layer; the second groove array is arranged on the surface of the piezoelectric layer and partially penetrates through the piezoelectric layer; the projection of the first groove on the first plane is overlapped with the projection of the electrode layer on the first plane along the thickness direction of the surface acoustic wave device; the projection of the second groove on the first plane is overlapped with the projection of the electrode layer on the first plane. According to the technical scheme provided by the invention, the propagation and interference modes of the body wave in the composite substrate are destroyed by using the groove, and the body wave reflection enhancement effect at the interface of the composite substrate is inhibited, so that the body wave response is effectively inhibited, and the quality of the surface acoustic wave device is improved.

Provided is a method for manufacturing a surface acoustic wave (SAW) device having multiple filter bands according to the present invention comprises: forming a first electrode layer on an upper portion of a substrate; forming a second electrode layer at a position adjacent to a formation position of the first electrode layer on the upper portion of the substrate; forming a wiring defect prevention layer surrounding one end of the first electrode layer and the other end of the second electrode layer; and forming a metal wiring layer on upper portions of the first electrode layer, the second electrode layer, and the wiring defect prevention layer.

The application provides a method for increasing the electromechanical coupling coefficient of an XBAR device, the XBAR device comprising a piezoelectric substrate layer and an IDT layer disposed on the piezoelectric substrate layer; wherein the IDT layer is composed of a first electrode and a second electrode. The XBAR device has the large bandwidth of a SAW device and the high frequency characteristics of a BAW device, but for some devices that require ultra-large bandwidth at a specific frequency, the maximum electromechanical coupling coefficient of the XBAR device cannot be obtained by using the settings of the SAW device, so the requirement for ultra-large bandwidth at a specific frequency cannot be met. Therefore, the width of the first electrode and the second electrode is changed, the admittance frequency response and the stray response at different metallization rates are analyzed, and a suitable metallization rate is selected to increase the electromechanical coupling coefficient of the XBAR device, so as to meet the requirement for ultra-large bandwidth of the device at a specific frequency. Furthermore, the method is relatively simple to implement, and does not increase the difficulty and cost of manufacturing the XBAR device.

A method for manufacturing a surface acoustic wave (SAW) device includes: forming a plurality of resonators, external connection pads, and a first wiring electrically connecting at least one of the resonators on a piezoelectric substrate; providing an insulating layer covering the first wiring; forming a support layer on the piezoelectric substrate that is higher than the insulating layer; forming a second wiring in a region above the insulating layer to laterally connect to the support layer; and forming a hermetically sealing cover layer on the support layer before or after the formation of the second wiring. This provides a method for manufacturing a SAW device with thick wiring.

The invention discloses an electroacoustic transducer and a TF-SAW device, and belongs to the technical field of radio frequency filtering. The electroacoustic transducer comprises an interdigital electrode formed by a plurality of groups of staggered electrode fingers, and a multi-stage bus bar structure arranged at two ends of the interdigital electrode and formed by a secondary bus bar, a primary bus bar and a bus bar connecting finger connecting the secondary bus bar and the primary bus bar, and an electrode finger mass increasing part is arranged in a low sound velocity area of the interdigital electrode. According to the method, the length D of the secondary bus bar, the average length gamma of false fingers and the proportion of the number of the false fingers with the length larger than the average value are optimized; when the false finger is not configured, the size proportion of the multi-stage bus bar structure and the bus bar connection finger is optimized. The invention further discloses a TF-SAW device comprising the electroacoustic transducer, and the optimal matching relation between the electroacoustic transducers of different structures and the corresponding piezoelectric substrates is defined. Through structural parameter optimization, the transverse mode can be effectively suppressed, and the frequency response stability and the filtering performance of the device are improved.

A packaged surface acoustic wave (SAW) device and its manufacturing method are provided. The packaged SAW device is relatively thin and can have a height of less than 220 micrometers. The packaged SAW device includes a photosensitive resin over a conductive structure formed by an electroplating process. The conductive structure can be coated on a cavity defining structure encapsulating the SAW device, the cavity defining structure including walls and a top. The photosensitive resin may contain phenolic resin. The photosensitive resin can be relatively thin. The edge portion of the piezoelectric substrate may not have the photosensitive resin. This application also provides a laser-marked packaged SAW device and its manufacturing method. A laser can be used to directly mark the opposite side of the piezoelectric substrate supporting the packaged SAW device. By directly marking the piezoelectric substrate itself, the use of a separate marking film can be avoided, making the packaged SAW device thinner.

This invention discloses a surface acoustic wave (SAW) device, comprising a first region and a second region. The SAW device further includes: at least one first bridging trace; at least one first filter located in the first region; a first grounding network corresponding to each of the first filters, with each first grounding network located in the first region; a second filter located in the second region and corresponding to each of the first filters; a second grounding network corresponding to each of the second filters, with each second grounding network located in the second region; the first filters are electrically connected to the first grounding networks; the second filters are electrically connected to the second grounding networks; the first bridging trace spans the first and second regions, with one end of the first bridging trace in the first region electrically connected to the first grounding network and the other end in the second region electrically connected to the second grounding network. This invention effectively improves the suppression and isolation of the SAW device and enhances its overall performance.

The invention relates to the technical field of bulk acoustic wave devices, and particularly provides a bulk acoustic wave device packaging method and structure, and the method comprises the steps: carrying out the flip-chip welding of a bulk acoustic wave device on a packaging substrate; filling an air gap between the bulk acoustic wave device and the packaging substrate with a liquid material of which the acoustic impedance is smaller than that of an electrode of the bulk acoustic wave device and the heat conductivity coefficient is greater than a first preset heat conductivity coefficient; solidifying the liquid material so as to form a reflection heat dissipation layer between the bulk acoustic wave device and the packaging substrate; packaging the bulk acoustic wave device and the reflection heat dissipation layer to enable the packaging layer to wrap the bulk acoustic wave device and the reflection heat dissipation layer so as to obtain a bulk acoustic wave device packaging structure; according to the method, the power capacity of the bulk acoustic wave device can be improved under the condition that the structure of the bulk acoustic wave device does not need to be optimized.

Disclosed are methods of preparing a Surface Acoustic Wave (SAW) device, comprising: sequentially depositing a Cu electrode, a silicon oxide film, modifying the surface of the silicon oxide film, and then depositing a piezoelectric film, and an Al electrode on a substrate having an interdigital (IDT) electrode pattern to obtain the SAW device. In some embodiments, the Cu and Al electrodes both have IDT electrode patterns corresponding to the IDT pattern of the substrate. Because the Sezawa wave mode that is adopted is formed by coupling film thickness vibration and transverse vibration, the present invention is characterized in that a longitudinal electric field and a transverse electric field are excited through the double-layer electrodes whereby the electromechanical coupling coefficient of the SAW device can be improved by changing the coupling pattern between the electric fields and the piezoelectric film.