1439 results about "Sulfur hexafluoride" patented technology

The invention discloses an etching method, a low-temperature polysilicon thin film transistor and an AMOLED panel. The etching method comprises the steps of pumping sulfur hexafluoride SF<6> and oxygen O<2> to a process chamber to perform etching on a metal molybdenum Mo layer to obtain molybdenum fluoride MoF<x>; pumping chlorine Cl<2> and oxygen O<2> to perform etching on the metal molybdenum Molayer to obtain molybdenum chloride MoCl<x>; and pumping a fluoro-etching gas and oxygen O<2> to be reacted with MoCl<x> to obtain easily volatile molybdenum oxyfluoride MoF<x>O<y>. By virtue of thescheme provided by the invention, residue of dry etching resultants can be reduced, and the problem of a display abnormal phenomenon of the AMOLED panel is solved.

The invention discloses a device for detecting the breakdown of sulfur hexafluoride gas-insulated electrical equipment. The device comprises multiple gas acquisition units. The gas acquisition units are connected with an A/D conversion module (11) wihch is connected with a monitoring and analysis system (12); after SF6 decomposition gas generated from the sulfur hexafluoride gas-insulated electrical equipment is respectively filtered and measured by the gas acquisition units, gas concentration analog signals are obtained, and the gas concentration analog signals are converted to digital signals by the A/D conversion module (11); after the digital signals and the temperature and humidity signals are processed, calculated and analyzed by the monitoring and analysis system (12), a quantitative contrast relationship between the components and concentration of the SF6 decomposition gas and the inner exceptions in the sulfur hexafluoride gas-insulated electrical equipment is obtained to judge the type and the severity of the breakdown and predict development trend of the breakdown; the device for detecting the breakdown is connected with an upper computer by an RS485 or RS232 interface (34) to realize remote communication.

The invention relates to an infrared photoacoustic spectroscopy detection device and method for decomposed components of sulfur hexafluoride under partial discharge, belonging to the technical field of partial discharge on-line monitoring of SF6 gas insulating electrical equipment. The device of the invention mainly comprises an induction voltage regulator, a corona free experimental transformer, a partial discharge free protective resistor, a standard capacitive voltage divider, a non-inductive resistor, a GIS analog element, a wide-frequency high-speed ultrahigh-capacity digital storage oscillograph and an infrared photoacoustic spectroscopy system. In the method of the invention, infrared photoacoustic spectroscopy detection is carried out on the decomposed gas of SF6 under partial discharge in the GIS analog element by the device of the invention. The invention has high sensitivity, little gas consumption, multiple detection components and strong anti-jamming capability, can effectively detect SF6, CF4, SO2F2, SOF2, SO2, HF and the like as low as 0.01 muL/L, and is suitable for on-line detection. The invention can be widely used for detection of partial discharge decomposed gas of SF6 in the SF6 gas insulating electrical equipment, especially the GIS equipment.

A machine for detecting sulfur hexafluoride (SF6) leaks using the mid-infrared differential absorption lidar (DIAL) technique with a commercically available, air-cooled, compact, pulsed transversely-excited-atmospheric (TEA) carbon dioxide (CO.sub.2) laser, a Cassegranian optical telescope for focusing both the laser emission and returning reflected signal, a user-operated focusing mechanism, a two-dimensional, thermoelectrically-cooled focal plane array (FPA) sensitive in the mid-infrared wavelength range (10.2-10.6 micrometers), a charge-coupled device (CCD) for 2-D imaging, a computer-based control system to rapidly switch the laser wavelength between 10.2470 micrometers, 10.7415 micrometers, and 10.5518 micrometers to utilize the Differential Absorption Lidar (DIAL) chemical detection technique, a rechargeable battery pack and power supply, and an image and data storage device using a solid-state memory stick.

A sulfur hexafluoride gaseous discharge micro component infrared detection device and method relates to a sulfur hexafluoride gaseous infrared absorption spectrum analysis device and method. The device of the invention mainly comprises an induction voltage regulator, a corona free experimental transformer, a non local discharge protective resistor, a standard capacitance voltage divider, a GIS analogue element, a non inductive resistance, a Fourier transform infrared spectrometer and a wideband high speed super capacity digital storage oscilloscope; wherein the gas tank in the Fourier transform infrared spectrometer is a long optical distance one. The method of the invention includes that discharge micro component detection is carried out on SF6 gas sample in GIS by utilizing the device ofthe invention. The invention can accurately detect various products produced by gas discharge decomposition of SF6 and has the characteristics of high detection precision, high spectrum resolution, good absorption peak symmetry, high signal to noise ratio and the like. The invention can be widely applicable to GIS equipment online running local discharge and provides reliable data for GIS equipment online running state analysis.

The invention relates to a local discharge detecting system of a sulfur hexafluoride gas-insulating and fully-enclosed combined electric apparatus. A central control unit thereof is connected with anultrahigh frequency signal receiver and an ultrasonic receiver; if the ultrahigh frequency signal and the ultrasonic wave are measured to have continuous correlation, the position of the ultrasonic receiver on the outer wall of a gas insulating switch device is moved for a plurality of times, a time difference of maximum amplitude occurring in an amplitude characteristic print of the ultrahigh frequency signal and maximum amplitude occurring in an amplitude characteristic print of the ultrasonic wave on all the detecting positions is recorded so as to calculate the distance of a discharge point and all the detecting positions; and then the position of insulation defect in the gas insulating switch device is calculated according to the overall size of the insulating switch device.

The invention discloses a test method of a drill hole gas extraction effective radius. The test method of the drill hole gas extraction effective radius comprises the following steps: selecting a sulfur hexafluoride (SF6) gas trace method to conduct spot test, under the condition of testing different pitches, sampling and collecting the SF6 gas required time which is detected by a detection hole, establishing a module at the basis of the Darcy law based on the occurrence of coal seam condition of the detecting location, simulating the flowing condition of the SF6 gas in a gas seepage field; calculating and obtaining the required time Ti'of the SF6 gas which moves to a sampling and collecting test hole, calculating a sampling and collecting effective coefficient a; detecting the required time of the SF6 gas based on the sampling and collecting detection hole detected by the SF6 gas trace method, calculating the required time which lowers the relative distance gas pressure below an effective value, and calculating the drill hole gas extraction effective radius based on power function relation between drill hole sampling and collecting gas effective extraction effective radius r (m) and the sampling and collecting time t (d). The test method of the drill hole gas extraction effective radius adopts combination of a direct method and an indirect method, and solves the problems that a plurality of defects exist by using the direct method to detect a drill hole gas extraction radius and extraction effective index is difficult to ascertain.

The invention discloses a sulfur hexafluoride gas density relay, which comprises a shell, a base, an end base, a bourdon tube, a temperature compensating element, and a plurality of micro switches serving as signal generators of the gas density relay, wherein one end of the bourdon tube is connected to the base, while the other end is connected with one end of the temperature compensating element by the end base; the micro switches are arranged on the base or in the shell, and are provided with connection point operating handles; the gas density relay further comprises a displacement magnification mechanism, wherein the displacement magnification mechanism has an initial end which is connected with the other end of the temperature compensating element, and an amplifying end which drives the connection point operating handles of the micro switches to connect or disconnect connection points on the micro switches; and when a gas density value changes, the bourdon tube and the temperature compensating element displace, and the displacement is magnified by the displacement magnification mechanism and then transmitted to the micro switches to make the micro switches send corresponding signals. As a result, the function of the density relay is completed.

A method to improve the high output characteristics of a ultrasonic transducer 1 by urging a cooling gas 13 to flow through the transducer, thereby passing a cooling member 18 between at least one pair of adjacent piezoelectric elements 6, 7. In a preferred embodiment sulfurhexafluoride (SF6) is used as cooling gas.

The present disclosure provides a method for etching trenches, contact vias, or similar features to a depth of 100 mum and greater while permitting control of the etch profile (the shape of the sidewalls surrounding the etched opening). The method requires the use of a metal-comprising masking material in combination with a fluorine-comprising plasma etchant. The byproduct produced by a combination of the metal with reactive fluorine species must be essentially non-volatile under etch process conditions, and sufficiently non-corrosive to features on the substrate being etched, that the substrate remains unharmed by the etch process. Although aluminum is a preferred metal for the metal-comprising mask, other metals can be used for the masking material, so long as they produce an essentially non-volatile, non-corrosive etch byproduct under etch process conditions. By way of example, and not by way of limitation, metallic materials recommended for the mask include aluminum, cadmium, copper, chromium, gallium, indium, iron, magnesium, manganese, nickel, and combinations thereof. In particular, aluminum in combination with copper or magnesium is particularly useful, where the copper or magnesium content is less than about 8% by weight, and other constituents total less than about 2% by weight. The plasma feed gas includes at least one fluorine-containing compound such as nitrogen trifluoride (NF3), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6), by way of example and not by way of limitation. Oxygen (O2), or an oxygen-comprising compound, or hydrogen bromide (HBr), or a combination thereof may be added to the plasma feed gases to help provide a protective layer over etched sidewalls, assisting in profile control of the etched feature.

The invention belongs to the field of on-line monitoring technology of insulative condition of SF6 (sulfur hexafluoride) gas insulated electric equipment, and in particular relates to a gas insulated electric equipment partial discharge multi-source joint detection method. The detection method mainly comprises the steps of preparing a test, cleaning a stainless steel cylinder, filling with SF6 gas, performing an industrial frequency AC SF6 gas PD test, pulse current detection, ultrahigh frequency sensor detection, fluorescent optical fiber sensor detection, discharge gas collection and component detection and the like. The detection method provided by the invention is simple in operation, liable to promote, and provides references for multi-dimensional information joint detection method. The detection method is widely applied to SF6 gas insulated electric equipment partial discharge multi-sensor joint detection under the condition of power frequency, and provides a simple test scheme for multi-dimensional information extraction of PD (Potential Difference) decomposition characteristics and a decomposition theory.

The invention relates to a method for comprehensively estimating the insulation state of sulfur hexafluoride electrical equipment and belongs to the technical field of monitoring and estimation on the insulation state of the sulfur hexafluoride electrical equipment. In the method, a computer and a comprehensively estimating device of the sulfur hexafluoride electrical equipment with the application number of 201020240900.0 are utilized, a fuzzy theory and a neural network method are applied by utilizing a program, and then the method carries out comprehensive estimation to the insulation state of the SF6 electrical equipment by adopting the working mode of an Windows interface. The method can be used for carrying out monitoring, intelligent analysis and comprehensive estimation to the running indexes comprising brackish water, mainly discharged decomposition products (HF, CO, SO2 and H2S) and the concentrations thereof and the like in SF6 gas of the SF6 electrical equipment, and has the characteristics of simple operation, high efficiency, flexible and convenient use, convenient on-site rapid diction and estimation and the like. The method can be widely applied to rapidly detecting and estimating the insulation state of the SF6 electrical equipment in power stations and transformer substations.

The invention discloses a sulfur hexafluoride gas sample collecting device. The device is provided with a gas picking joint of a fast-inserted pipe, and the appearance of the device is a case body structure provided with an upturning cover; the relative buckling faces of a case body and the upturning cover are provided with a control panel and a display screen respectively; the periphery of the case body is provided with a fast-inserted gas path interface and a power interface; and the case body is provided with a triple valve, an SF6 flow rate electronic controller, a minitype vacuum pump, an electromagnetic valve and an integrated circuit control system inside. The collecting device has the advantages of portable design, full closed sampling, and sample undistortionless, and has the function of controlling the flow rate to precisely set the flow rate so as to be convenient to connect an SF6 gas detector with higher requirements on the flow rate precision. The device completely meets the electric power industry standard of an SF6 gas sampling method for electrical equipment.

A sulfur hexafluoride decomposition experiment system comprises a tank body, a high pressure generation device, a first pole plate, a second pole plate, a heating device, a gas adding device and a gas detection device, wherein the first pole plate and the second pole plate are arranged in the tank body, connected with the high pressure generation device and used for simulating electric field characteristics of a sulfur hexafluoride insulation electrical device when an overheating fault occurs; the heating device is arranged on the second pole plate and used for simulating thermal field characteristics of the sulfur hexafluoride insulation electrical device under the overheating fault condition; the gas adding device is used for inputting sulfur hexafluoride gas into the tank body; the gas detection device is used for detecting the specific content of decomposition products of sulfur hexafluoride under the conditions of the electric field characteristics, the thermal field characteristics and pressure characteristics of the sulfur hexafluoride insulation electrical device when the overheating fault occurs, so that the decomposition process of the sulfur hexafluoride in the real operation environment and under the action of the overheating fault is simulated, and the specific content of the decomposition products is detected.

This invention provides a DDR type zeolite membrane, characterized in that it is formed as a membrane on a substrate and its main component is silica, and that each single gas permeance at room temperature and 100° C. are different, respectively among at least two types of gases selected from a group consisting of carbon dioxide (CO₂), hydrogen (H₂), oxygen (O₂), nitrogen (N₂), methane (CH₄), normal butane (n-C₄H₁₀), isobutane (i-C₄H₁₀), sulfur hexafluoride (SF₆), ethane (C₂H₆), ethylene (C₂H₄), propane (C₃H₈), propylene (C₃H₆), carbon monoxide (CO), and nitrogen monoxide (NO).

The present invention relates to a dissolvent with effective ingredient extracted from the plant-and-animal raw material and the extraction method thereof. One subcritical fluid extraction solvent includes an extraction solvent of a compound or composition extracted from the raw material containing compound or composition as component element, and the solvent is mainly characterized in that the liquid sulfur hexafluoride works as the extraction solvent. The invention also includes a method for extracting the subcritical fluid extraction solvent. The advantage of the invention is that the extraction and separation of the target component in the natural product are optionally executed to further increase the extraction rate of the intermediate product and the usage factor of the raw material while the unique dissolving character of the sulfur hexafluoride and the mixed solvent thereof to the liposoluble active ingredient is used. The physical features of strong dissolving capacity and low boiling point of the sulfur hexafluoride and the mixed solvent thereof are used to reduce the consumption quantity of the energy source, dissolvent of the system and the cost, and increase the market competition ability of the intermediate product.

The present invention relates to a method of etching tungsten or tungsten nitride in semiconductor structures, and particularly to the etching of gate electrodes which require precise control over the etching process. We have discovered a method of etching tungsten or tungsten nitride which permits precise etch profile control while providing excellent selectivity, of at least 175:1, for example, in favor of etching tungsten or tungsten nitride rather than an adjacent oxide layer. Typically, the oxide is selected from silicon oxide, silicon oxynitride, tantalum pentoxide, zirconium oxide, and combinations thereof. The method appears to be applicable to tungsten or tungsten nitride, whether deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). In particular, an initial etch chemistry, used during the majority of the tungsten or tungsten nitride etching process (the main etch), employs the use of a plasma source gas where the chemically functional etchant species are generated from a combination of sulfur hexafluoride (SF6) and nitrogen (N2), or in the alternative, from a combination of nitrogen trifluoride (NF3), chlorine (Cl2), and carbon tetrafluoride (CF4). Toward the end of the main etching process, a second chemistry is used in which the chemically functional etchant species are generated from Cl2 and O2. This final portion of the etch process may be referred to as an "overetch" process, since etching is carried out to at least the surface underlying the tungsten or tungsten nitride. However, this second etch chemistry may optionally be divided into two steps, where the plasma source gas oxygen content and plasma source power are increased in the second step.

The invention discloses a double acting self energy thermal expansion type high pressure sulfur hexafluoride breaker arc extinguish chamber, comprising a breaker shell and a static contact mechanism, a moving contact mechanism, a cylinder and an operating mechanism which are fixed in the breaker shell in a sealing way, wherein the operating mechanism drives the moving contact mechanism to move; the static contact mechanism comprises a static main contact and a static arc contact, the moving contact mechanism comprises an arc extinguishing port, a moving main contact and a moving arc contact; the static contact mechanism also comprises a rotating shifting fork driving the static arc contact to move up and down and a guide rail for the static arc contact to move up and down; the moving contact mechanism also comprises a push-and-pull rod which is arranged above the arc extinguishing port and can move up and down along with the moving contact mechanism to correspondingly drive the shifting fork to rotate. The invention has novel and reasonable structure design, all components are compactly connected, and use operation is convenient and use effect is good, thus the actual problems that stroke of the moving contact is large and the required operation power is also high during opening and closing operations in use of the existing self energy type breaker arc extinguish chamber can be effectively solved.

A method of forming an intermediate semiconductor device is disclosed that comprises providing a semiconductor substrate, forming a photoresist layer on the semiconductor substrate, implanting a dopant into the semiconductor substrate, and removing a dopant-containing layer from the photoresist layer. The dopant-containing layer includes dopant residuals and a carbon-rich crust and may be formed during implantation. The dopant-containing layer may be removed from the photoresist layer by exposing the dopant-containing layer to a water rinse, a chlorinated plasma or to a fluorinated plasma. The water rinse may include deionized water that is maintained at a temperature that ranges from approximately 25° C. to approximately 80° C. The fluorinated plasma may be formed from a gaseous precursor selected from the group consisting of nitrogen trifluoride, carbon tetrafluoride, trifluoromethane, hexafluoroethane, sulfur hexafluoride, and mixtures thereof. A method of forming an ultrashallow junction is also disclosed.

The invention provides an on-site CVT integrated verification system, which comprises a test power supply, a standard appliance, a measuring apparatus and a vehicle-mounted test platform. The test power supply consists of a series reactor, an exciting transformer and a voltage regulator; the standard appliance comprises a high-tension bushing, a standard voltage transformer and a standard capacitor, wherein the high-tension bushing, the standard voltage transformer, the standard capacitor and the series reactor are designed into an integrated sulfur hexafluoride SF6 closed combined electrical apparatus (GIS); and the standard voltage transformer is designed into an SF6 gas insulated reclining posture type structure. The system of the invention can conveniently, accurately and reliably verify the ratio error of on-site 220Kv to 500 Kv CVT (capacitor voltage transformer), the capacitance of a capacitive divider, the medium loss, and the like without unloading from a vehicle. The additional error guided by the measuring system is relatively fixed and is easy to measure, wherein the variation thereof is less than or equal to 0.02 percent.

The invention relates to a checking system and a checking method for a sulfur hexafluoride density relay. The checking system comprises an intelligent control and processing unit, a data acquisition unit, a data storage unit and an intelligent control output unit which are based on AVR singlechips, uses a micro control unit as the core, and is provided with hardware modules for man-machine interaction, AD sampling, data storage, temperature measurement, motor driving and the like. The checking method mainly comprises functional modules for density testing, humidity testing, parameter setting,data query and the like. The invention has a humanized man-machine interactive system and has the advantages of convenient customer use, high automation degree, good air tightness and function diversity, thereby filling up the gap in the relevant field.