The invention belongs to the technical field of solar
photovoltaics, and particularly relates to a back contact
solar cell and a preparation method thereof. According to the method, the doped
silicon oxide layer in the area needing to be removed is effectively removed by utilizing the strong directionality of dry
fluorine etching and the difference of selective
etching of the
organic polymer and the
silicon oxide, so that the doped
silicon oxide layer and the doped
polycrystalline silicon layer which are arranged below the
organic polymer mask area are well protected. According to the invention, the doped
silicon oxide layer is removed by adopting the dry
fluorine etching, and the dry
fluorine etching has good selectivity on the
organic polymer mask and the doped
silicon oxide layer, so that the loss of wet etching in the transverse direction can be effectively avoided. And the dry fluorine etching is strong in
directivity and higher in etching precision. The doped
silicon oxide layer in the non-printing area is removed through dry fluorine etching, and meanwhile, a part of the doped
polycrystalline silicon layer located below the doped silicon oxide layer is correspondingly etched, so that the etching pressure of the subsequent doped
polycrystalline silicon layer is reduced, and the production efficiency is further improved.