The invention relates to the technical field of micro electro
mechanical system devices, in particular to a SON and
silicon epitaxy process-based
PMUT preparation method and a
PMUT, and the method comprises the following steps: S1, forming a cavity on a
silicon substrate by using an SON process; s2, annealing treatment is carried out, and the roughness of the
silicon surface above the cavity is optimized; s3, forming a
monocrystalline silicon epitaxial layer above the cavity by using a silicon epitaxial process; s4, carrying out planarization
processing by using CMP, and optimizing the
surface roughness of the
monocrystalline silicon epitaxial layer; and S5, preparing the
PMUT above the
monocrystalline silicon epitaxial layer. According to the invention, the consistency and stability of device performance are improved; the process
route is relatively simplified, the process steps and equipment investment are reduced, the production cost is reduced, and large-scale industrial production is facilitated; the monocrystalline silicon epitaxial layer has good
crystal quality and
mechanical property, and the influence of structural defects on the performance of the device is reduced; proper materials can be selected for the piezoelectric layer according to different application requirements, and the sensitivity and reliability of the PMUT are further improved.