218 results about "Piezoelectric membrane" patented technology

A piezoelectric sensing module includes a polyvinylidene fluoride (PVDF) piezoelectric film, a first electrode layer that includes multiple receiver electrodes arranged in a first pattern enabling a sensing of a position of an input object on a touch surface using the PVDF piezoelectric film, and a second electrode layer that includes at least one common electrode. The PVDF piezoelectric film is arranged between the first electrode layer and the second electrode layer, with the second electrode layer between the PVDF piezoelectric film and the touch surface.

The invention relates to a double-layer dressing for promoting wound healing and inhibiting scars and a preparation method and application thereof.The double-layer dressing comprises a hydrogel layer and a piezoelectric film layer compounded on the hydrogel layer, and the piezoelectric film layer is prepared by mixing an organic piezoelectric material, a ferroelectric material and an organic solvent and then conducting an electrostatic spinning technology; the hydrogel layer is formed by curing a methacrylic anhydride acellular extracellular matrix, methacrylic anhydride catechol chitosan and conductive nanoparticles under the action of a curing agent. The lower skin contact layer of the double-layer dressing is the hydrogel layer, so that the directional growth of fibroblasts is favorably induced; the upper dressing is a piezoelectric material composite ferroelectric material, is beneficial to piezoelectric stimulation re-induction function recovery after final skin repair and guidance of directional growth of wound cells, and has good skin wound induction repair and scar inhibition effects.

The invention discloses a lead zirconate titanate film material with an ultrahigh voltage coefficient as well as a preparation method and application of the lead zirconate titanate film material, and belongs to the technical field of electronic material development and film materials. The preparation of the lead zirconate titanate film material is realized by adopting a sol-gel spin-coating method and controlling the annealing times. The piezoelectric film material provided by the invention can be directly deposited on a Si substrate coated with metal Pt, does not need to introduce an additional buffer layer or dope any element, is short in annealing time and simple in preparation process, all required raw materials are cheap and easy to obtain, and the piezoelectric film material particularly has high orientation degree, low coercive voltage and excellent ferroelectric and piezoelectric properties, is suitable for preparing large-size (2-4 inches) wafers, and has a wide application prospect. And huge application potential is shown in the field of piezoelectric micro-electro-mechanical system (MEMS) devices.

To provide a piezoelectric element and a piezoelectric actuator at low cost, which are capable of obtaining large driving force, have good responsiveness, and have long-term reliability.SOLUTION: In a piezoelectric element and an actuator, the piezoelectric element includes a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode in this order on a substrate, the first piezoelectric film and the second piezoelectric film each have a perovskite-type oxide as a main component, one of the first piezoelectric film and the second piezoelectric film is an epitaxial film and the other is a uniaxially oriented film.SELECTED DRAWING: Figure 1

The invention relates to a piezoelectric element and an actuator. The present invention addresses the problem of providing, at low cost, a piezoelectric element and a piezoelectric actuator that can obtain a large driving force, have good responsiveness, and can obtain long-term reliability. In the piezoelectric element and the actuator, the piezoelectric element includes a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode in this order on a substrate, the first piezoelectric film and the second piezoelectric film each have a perovskite oxide as a main component, one of the first piezoelectric film and the second piezoelectric film is an epitaxial film, and the other is a uniaxially oriented film.

An acoustic wave device includes acoustic elements sharing a support, and a piezoelectric film on the support and including a piezoelectric layer that includes a piezoelectric body. The acoustic elements include a first acoustic element that is an acoustic coupling filter, and a second acoustic element electrically connected to the first acoustic element. In plan view, an acoustic reflection portion is provided in the support overlapping with first electrode fingers, second electrode fingers, and third electrode fingers of the first acoustic element and a functional electrode of the second acoustic element.

A method for manufacturing a piezoelectric film including a monocrystalline or polycrystalline piezoelectric material in which a particular oriented crystal axis is inclined from a direction perpendicular or substantially perpendicular to the film, includes preparing a substrate including a single crystal with a same rotational symmetry about a particular substrate crystal axis as a rotational symmetry about the particular oriented crystal axis in the piezoelectric material, and the particular substrate crystal axis has a same inclination as an inclination of the particular oriented crystal axis, and forming a piezoelectric film including the piezoelectric material on the substrate by an epitaxial process.

A piezoelectric element includes, a substrate, a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode, the first electrode, the first piezoelectric film, the second electrode, the second piezoelectric film, and the third electrode being provided on the substrate, a seed layer is provided only between the first electrode and the first piezoelectric film or between the second electrode and the second piezoelectric film,, the other piezoelectric film that is provided on the seed layer satisfies, in a case in which a positive-side coercive voltage is denoted by Vcr+ and a negative-side coercive voltage is denoted by Vcr, |Vcr++Vcr−|<|Vcr+−Vcr−|, and satisfies, in a case in which a positive-side coercive voltage is denoted by Vcf+ and a negative-side coercive voltage is denoted by Vcf− in the one piezoelectric film, |Vcf+−Vcf−|<|Vcr+−Vcr−|.

An acoustic wave device includes a piezoelectric film including a piezoelectric layer made of lithium niobate, a first interdigitated electrode including a first busbar and first electrode fingers, a second interdigitated electrode including a second busbar and second electrode fingers and interdigitated with the first electrode fingers, and a third electrode including third electrode fingers side by side with the first and second electrode fingers, connected to a potential different from potentials of the first and second interdigitated electrodes and a connection electrode connecting adjacent third electrode fingers to each other. The connection electrode connects ends of adjacent third electrode fingers closer to at least the first busbar. The connection electrode is between at least the first busbar and ends of the second electrode fingers. Mass-addition films are provided in at least a portion of at least one of first, second, and third gap regions.

Provided is a piezoelectric stack including: a substrate having a main surface with a diameter of 3 inches or more; and a piezoelectric film on the substrate, comprising an alkali niobium oxide containing K, Na, Nb, and O, wherein in the piezoelectric film, a composition of K, Na, and Nb satisfies a relationship of 0.94≤(K+Na) / Nb≤1.03 over an entire inner region of the main surface of the piezoelectric film, excluding its periphery.

The present invention provides an actuator capable of suppressing a decrease in the vibration displacement of a piezoelectric element, a liquid discharge head, a liquid discharge device, and a method for manufacturing the actuator. [Solution] The actuator 110 is laminated on a flow channel substrate 100, which is a substrate on which a pressurized liquid chamber 4 is formed, and comprises a vibrating membrane 103 that forms part of the wall surface of the pressurized liquid chamber 4, and a piezoelectric element 5 arranged on the side of the vibrating membrane 103 opposite to the side that forms the wall surface of the pressurized liquid 4. The insulating film 8 that electrically insulates at least the second lead wiring, which is a wiring portion drawn out from the second electrode 53, from the piezoelectric membrane 52 and the first electrode 51 has an insulating film opening 8a, and the central part of the second electrode 51 is an area that is not covered by the insulating film 8.

A method of manufacturing an acoustic wave device includes preparing a substrate, preparing a support, providing a buffer layer on the substrate, providing a piezoelectric film on the buffer layer, joining the piezoelectric film of a multilayer body including the substrate, the buffer layer, and the piezoelectric film to the support, and removing the buffer layer and the substrate from the piezoelectric film. (|LS−LB| / LS)×100[%]≤20[%], and (|LP−LB| / LP)×100[%]≤10[%], where LS is a lattice constant of the substrate, LB is a lattice constant of the buffer layer, and LP is a lattice constant of the piezoelectric film.

A piezoelectric element (100) comprises: a substrate (10); a transmission-side unit (20) that is disposed on the substrate and transmits sound waves; and a reception-side unit (30) that is disposed on the substrate and receives sound waves. The transmission-side unit includes: a plurality of transmission-side piezoelectric layers (21); and a plurality of transmission-side electrodes (22) that are disposed so as to sandwich the respective transmission-side piezoelectric layers. The reception-side unit includes: one or more reception-side piezoelectric layers (31); and a plurality of reception-side electrodes (32) that are disposed so as to sandwich the respective one or more reception-side piezoelectric layers. The number of the transmission-side piezoelectric layers is greater than the number of the reception-side piezoelectric layers.

A piezoelectric sensing module comprising: a polyvinylidene fluoride (PVDF) piezoelectric film, a first electrode layer including a plurality of receiver electrodes arranged in a first pattern that enables sensing of a position of an input object on a touch surface using the PVDF piezoelectric film, and a second electrode layer including at least one common electrode, wherein the second electrode layer is between the PVDF piezoelectric film and the touch surface, and the PVDF piezoelectric film is disposed between the first electrode layer and the second electrode layer.

A transducer includes: a film support portion having a hollow portion; a vibration film displaceable in a film thickness direction; a piezoelectric element, the piezoelectric element including a pair of electrodes and a piezoelectric film; and in regions overlapping the hollow portion, a plurality of first regions having a first total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, and a plurality of second regions having a second total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, the second total film thickness being different from the first total film thickness. The first regions and the second regions are alternately arranged, and one of the first regions is adjacent to a connection portion between the film support portion and the vibration film.

The present invention provides a polymer-based piezoelectric composite material from which a piezoelectric film capable of outputting a higher sound pressure and exhibiting excellent flexibility even in a low-temperature environment is obtained in a case of using a piezoelectric speaker, a piezoelectric film formed of the polymer-based piezoelectric composite material, and a piezoelectric speaker and a flexible display which are formed of the piezoelectric film. The polymer-based piezoelectric composite material of the present invention is a polymer-based piezoelectric composite material including a polymer matrix which contains a polymer containing a group represented by Formula (1), and piezoelectric particles.*-L1-(CR1R2)n—CN  Formula (1)In Formula (1), L1 represents a divalent linking group excluding a urethane group. R1 and R2 each independently represent a hydrogen atom, an alkyl group, or an aryl group. n represents an integer of 3 or greater. * represents a bonding position with respect to the main chain of a polymer.

The present invention relates to the technical field of energy harvesting equipment, and provides a continuous vibration energy harvesting device. The continuous vibration energy harvesting device comprises a shell, a coil skeleton is provided inside the shell, and the two ends of the coil skeleton are elastically connected to the shell by springs. A magnet is provided in the coil skeleton, and the two ends of the magnet are fixedly connected to the shell. A first coil and a second coil are wound around the outer sides of the two ends of the coil skeleton, and two piezoelectric film assemblies are provided on opposite sides of the coil skeleton. Each piezoelectric film assembly includes two piezoelectric films arranged at intervals, and the two piezoelectric films are electrically connected to the first coil and the second coil respectively. The continuous vibration energy harvesting device provided by the present invention can combine the piezoelectric effect and the electromagnetic effect to perform vibration energy harvesting, effectively improving the energy conversion efficiency and the power output efficiency.

An apparatus includes a die, a bonding layer, and a film. The die includes a semiconductor substrate, a metallization structure on the semiconductor substrate, and a dielectric material around at least a part of the metallization structure. The bonding layer is on the metallization structure. The film is attached on the bonding layer. The film includes a piezoelectric material.

A liquid ejection head is provided that can suppress peeling from end portions of a piezoelectric layer and an electrode layer and peeling from wiring above a contact portion while ensuring a required amount of displacement of a piezoelectric element. To this end, a protective film is formed so as to cover a partial region including an end portion of a first electrode below a piezoelectric film, a partial region including an end portion of a second electrode above the piezoelectric film, and a second layer wiring above a contact portion, across a center of the piezoelectric film.

Embodiments relate to a transducer. The transducer can include a substrate having a front surface, a back surface, and a via extending through the substrate from the front surface to the back surface. The transducer can include a via conductive layer disposed on: a surface of the substrate defined by the via; a front surface region adjacent the via; and a back surface region adjacent the via. The transducer can include a via-fill material disposed within the via and occupying a volume of space formed by the via. The transducer can include an anisotropic layer disposed on the front surface region and the via-fill material located at or near the front surface. The transducer can include a piezoelectric film disposed on the anisotropic layer. The transducer can include a conductive layer disposed on the piezoelectric film.

The invention relates to a heat dissipation structure of an LVDT displacement sensor based on a micro channel, which belongs to the technical field of sensors and comprises an outer shell, a framework, a coil, an iron core, the micro channel, a water tank and a piezoelectric diaphragm. The framework is arranged in the outer shell, the coil is arranged around the periphery of the framework, and the iron core is arranged on the inner side of the framework and can move in the axial direction of the framework; the micro channel is arranged on the inner side of the framework and surrounds the iron core; the water tank is arranged near one end of the framework; a liquid channel is formed in the micro channel and communicated with the water tank through the liquid channel; the piezoelectric diaphragm is arranged close to the water tank and used for driving the heat conduction liquid in the water tank to flow along the liquid channel. According to the LVDT displacement sensor, the miniature heat dissipation channel is arranged in the framework, the piezoelectric diaphragm is combined to drive the heat conduction liquid to circularly flow, heat can be effectively conducted and released to the external environment, and the performance and working stability of the LVDT displacement sensor in application occasions with high linearity requirements are improved.

The present invention provides a MEMS air-cooled heat dissipation device and its use method, comprising: a housing, a microvalve assembly, and a motion actuator assembly. The microvalve assembly includes a cantilever beam, a first diaphragm, and an air chamber. The cantilever beam is attached to an actuator to generate a driving force in the normal direction on the cantilever beam, thereby utilizing the cantilever beam to selectively open or close a through hole. The motion actuator assembly includes a second diaphragm attached to the housing to separate a first fluid chamber from a second fluid chamber. The second diaphragm includes an opening, and a diaphragm and a piezoelectric actuator are arranged across the opening. The present invention utilizes the actuator and cantilever beam to construct an active one-way microvalve assembly. The microvalve assembly, in conjunction with the motion actuator assembly, guides cooling gas unidirectionally toward a fluid chamber adjacent to the hot end of the electronic device, thereby discharging heated air and achieving a heat dissipation effect. Utilizing the high operating frequency of the piezoelectric film layer, the ultrasonic waves generated by the vibration are inaudible, resulting in the advantages of being noiseless and having low power consumption.

An embedded hydrophone sensor in a hydraulic body such as pipe, fitting, or flow meter (PIPE) that includes a thinned "pipe" wall membrane of radius R, that has a profile that provides sufficient flexural deflection under pressure with effective thickness t_pipe. A piezo-electric element connected to the pipe membrane using a glue or mechanical means, while the piezo membrane thickness should be less than pipe_membrane thickness multiplied by (maximum_strain_Piezo / maximum_strain_Pipe).

To provide a piezoelectric migration film including a patterned piezoelectric electrode property for generating an image via an electrophoretic medium.SOLUTION: A thin piezophoretic film and a display film comprising the thin piezophoretic film. In some embodiments, the piezoelectric material of the piezophoretic film may be patterned with a high voltage electric field after fabrication of the piezophoretic film. Such films are useful as security markers, authentication films, or sensors. The film is generally flexible. Some films are less than 100 μm thick. Displays formed from the films do not require an external power source.SELECTED DRAWING: Figure 4C

Embodiments of the present disclosure relate to optomechanical transducer devices and corresponding methods. An exemplary device includes an optically transparent substrate having a first surface and a second surface; a piezoelectric film disposed on the first surface and oscillating in response to a light beam propagating through the substrate; at least one reflective facet facing the substrate and disposed at the piezoelectric film; and an optical element that receives the light beam at an input end and guides the light beam to an output end coupled to the second surface. The optical element includes an optical focusing path that focuses the light beam at a focal point of the piezoelectric film, and at least one optical collimation path that collimates the light beam onto at least one of the reflective facets. The optical element guides light reflected from at least one of the reflective facets to the input end, and the reflected light indicates the position of the optical element relative to the focal point.

The application provides an acoustic piezoelectric film device structure, comprising: a support body; a piezoelectric film layer structure covering an area surrounded by the support body and fixedly connected to the support body at the periphery, the piezoelectric film layer structure comprising a piezoelectric layer and an electrode layer covering the upper and lower surfaces of the piezoelectric layer, the piezoelectric film layer structure comprising an inner area and an outer area surrounding the inner area, and the inner area and the outer area having an electrode separation zone therebetween, the electrode separation zone separating the electrode layer into a central electrode layer and a peripheral electrode layer. The acoustic piezoelectric film layer structure designed by the application can reduce the warping degree of the piezoelectric film layer structure and control the increase of the width of the acoustic transmission channel of the slit area caused by warping, the electrode layer of the application fully covers the surface of the piezoelectric film layer, and the novel separation and series or parallel electrical connection mode between the longitudinal multiple piezoelectric layers and the transverse multiple electrode layers can realize the electromechanical conversion of the whole area of the piezoelectric film layer and improve the electromechanical conversion efficiency of the piezoelectric film device.

A film structure (10) includes a Si layer (12a), a ZrO2 layer (12b), which is a buffer film containing ZrO2, formed on the Si layer (12a), and a piezoelectric film (11) formed on the ZrO2 layer (12b). The Si layer 12a is an SOI layer on a Si(100) substrate or an SOI substrate including a base made of a Si substrate, an insulating layer on the base, and an SOI layer made of a Si(100) film on the insulating layer. The piezoelectric film (11) includes c-axis oriented LiNbO3 or LiTaO3.

The embodiment of the invention discloses an MEMS loudspeaker and a preparation method thereof. The MEMS loudspeaker comprises a vibrating diaphragm layer and a supporting structure layer which are stacked in the thickness direction, the vibrating diaphragm layer comprises a vibrating diaphragm area; the vibrating diaphragm layer of the vibrating diaphragm area comprises a plurality of piezoelectric film layers which are stacked in the thickness direction; the diaphragm area comprises a separation slit; the supporting structure layer comprises a cavity, and the vibrating diaphragm area is located in the projection area range of the cavity in the thickness direction. According to the embodiment of the invention, the driving efficiency is improved through the multi-layer piezoelectric film layer structure, and the working stress distribution is optimized through the separation slits, so that the emission performance and the signal consistency of the device are jointly improved.

The application discloses a high-beta-crystal-phase polyvinylidene fluoride fiber piezoelectric film and a preparation method thereof, wherein the preparation method comprises the following steps: step one: polyvinylidene fluoride resin with a weight average molecular weight of 500,000-800,000, a long branched chain content of 1.2‰-5‰, and a 7% mass fraction NMP solution rotary viscosity of 5000-8000 mpa.s at 25 DEG C is prepared by emulsion polymerization of polyvinylidene fluoride monomer and difluoro-monochloroethane; and step two: the polyvinylidene fluoride resin obtained in step one is made into an electrostatic spinning precursor solution, and the electrostatic spinning precursor solution is spun and film-formed by an electrostatic spinning method. The polyvinylidene fluoride nanofiber film with finer and higher beta-crystal-phase content can be prepared by adjusting the content of the long branched chain and the viscosity of the electrostatic spinning solution.

To provide an elastic wave device capable of improving a Q value while improving an electromechanical coupling coefficient k2.SOLUTION: An elastic wave device 100 includes: a substrate 10; a lower electrode 12 provided on the substrate 10; an upper electrode 20 provided on the lower electrode 12; a first piezoelectric film 16 that forms a resonance region 50 while at least part of the first piezoelectric film is sandwiched between the lower electrode 12 and the upper electrode 20, and that is aluminum nitride doped with an impurity element that increases piezoelectricity; and a second piezoelectric film 18 that is located in a central region 54 that is a region falling inside the resonance region 50, that is provided between the lower electrode 12 and the first piezoelectric film 16, and that is aluminum nitride in which a doping amount of an impurity element that increases piezoelectricity is less than a doping amount in the first piezoelectric film 16.SELECTED DRAWING: Figure 1