356 results about "Piezoelectric membrane" patented technology

A piezoelectric sensing module includes a polyvinylidene fluoride (PVDF) piezoelectric film, a first electrode layer that includes multiple receiver electrodes arranged in a first pattern enabling a sensing of a position of an input object on a touch surface using the PVDF piezoelectric film, and a second electrode layer that includes at least one common electrode. The PVDF piezoelectric film is arranged between the first electrode layer and the second electrode layer, with the second electrode layer between the PVDF piezoelectric film and the touch surface.

The invention relates to a double-layer dressing for promoting wound healing and inhibiting scars and a preparation method and application thereof.The double-layer dressing comprises a hydrogel layer and a piezoelectric film layer compounded on the hydrogel layer, and the piezoelectric film layer is prepared by mixing an organic piezoelectric material, a ferroelectric material and an organic solvent and then conducting an electrostatic spinning technology; the hydrogel layer is formed by curing a methacrylic anhydride acellular extracellular matrix, methacrylic anhydride catechol chitosan and conductive nanoparticles under the action of a curing agent. The lower skin contact layer of the double-layer dressing is the hydrogel layer, so that the directional growth of fibroblasts is favorably induced; the upper dressing is a piezoelectric material composite ferroelectric material, is beneficial to piezoelectric stimulation re-induction function recovery after final skin repair and guidance of directional growth of wound cells, and has good skin wound induction repair and scar inhibition effects.

The invention discloses a piezoelectric nanofiltration membrane with an electric anti-scaling function and a preparation method and application thereof, and belongs to the technical field of membrane method water treatment. Two-dimensional conductive nanosheets are doped in a traditional PVDF piezoelectric membrane, phase separation is performed in an alternating electric field, then a piezoelectric base membrane with high beta-PVDF content and a crystal orientation structure is prepared, and then interfacial polymerization is performed on the piezoelectric base membrane to form the nanofiltration membrane with piezoelectric activity. By adding the two-dimensional conductive nanosheets into the base film, on one hand, the content of beta-phase PVDF in the base film is increased, so that the piezoelectric property of the base film is enhanced; on the other hand, the two-dimensional conductive nanosheets are induced to be directionally arranged and form conductive synapses on the surface of the base membrane by synchronously applying an alternating electric field in the membrane preparation process, so that after interfacial polymerization, the conductive synapses can penetrate into a polyamide layer and form a conductive network, and finally a piezoelectric signal of the base membrane is conducted to the surface of the nanofiltration membrane; therefore, the nanofiltration membrane is endowed with piezoelectric characteristics and an electric anti-scaling function.

The invention discloses a lead zirconate titanate film material with an ultrahigh voltage coefficient as well as a preparation method and application of the lead zirconate titanate film material, and belongs to the technical field of electronic material development and film materials. The preparation of the lead zirconate titanate film material is realized by adopting a sol-gel spin-coating method and controlling the annealing times. The piezoelectric film material provided by the invention can be directly deposited on a Si substrate coated with metal Pt, does not need to introduce an additional buffer layer or dope any element, is short in annealing time and simple in preparation process, all required raw materials are cheap and easy to obtain, and the piezoelectric film material particularly has high orientation degree, low coercive voltage and excellent ferroelectric and piezoelectric properties, is suitable for preparing large-size (2-4 inches) wafers, and has a wide application prospect. And huge application potential is shown in the field of piezoelectric micro-electro-mechanical system (MEMS) devices.

To provide a piezoelectric element and a piezoelectric actuator at low cost, which are capable of obtaining large driving force, have good responsiveness, and have long-term reliability.SOLUTION: In a piezoelectric element and an actuator, the piezoelectric element includes a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode in this order on a substrate, the first piezoelectric film and the second piezoelectric film each have a perovskite-type oxide as a main component, one of the first piezoelectric film and the second piezoelectric film is an epitaxial film and the other is a uniaxially oriented film.SELECTED DRAWING: Figure 1

The invention relates to a piezoelectric element and an actuator. The present invention addresses the problem of providing, at low cost, a piezoelectric element and a piezoelectric actuator that can obtain a large driving force, have good responsiveness, and can obtain long-term reliability. In the piezoelectric element and the actuator, the piezoelectric element includes a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode in this order on a substrate, the first piezoelectric film and the second piezoelectric film each have a perovskite oxide as a main component, one of the first piezoelectric film and the second piezoelectric film is an epitaxial film, and the other is a uniaxially oriented film.

Provided is a laminated piezoelectric film having excellent thermal stability, adhesion, and transparency. The present invention relates to a laminated piezoelectric film comprising: a piezoelectric film containing a fluorine-based resin as a main component; and a thermosetting hard coat layer laminated on at least one surface of the piezoelectric film, the laminated piezoelectric film having an absolute value of a thermal shrinkage rate of 1.0% or less in both a longitudinal direction (MD) and a transverse direction (TD) when heat treated at 100 DEG C for 30 minutes, an adhesion of the piezoelectric film and the thermosetting hard coat layer as evaluated on the basis of ASTM D3359 being 4B or more, and b * in an L * a * b * color system being-0.7 or more and 0.7 or less.

An acoustic wave device includes acoustic elements sharing a support, and a piezoelectric film on the support and including a piezoelectric layer that includes a piezoelectric body. The acoustic elements include a first acoustic element that is an acoustic coupling filter, and a second acoustic element electrically connected to the first acoustic element. In plan view, an acoustic reflection portion is provided in the support overlapping with first electrode fingers, second electrode fingers, and third electrode fingers of the first acoustic element and a functional electrode of the second acoustic element.

The invention provides an MEMS air-cooled heat dissipation device and a use method thereof.The MEMS air-cooled heat dissipation device comprises a shell, a micro-valve assembly and a motion execution assembly, the micro-valve assembly comprises a cantilever beam, a first partition plate and an air chamber, an actuator is attached to the cantilever beam to generate driving force in the normal direction on the cantilever beam, and therefore a through hole is selectively opened or closed through the cantilever beam; the motion executing assembly comprises a second partition plate, the second partition plate is attached to the shell to separate the first fluid chamber and the second fluid chamber, the second partition plate comprises an opening, and the vibrating diaphragm and the piezoelectric actuator are arranged on the opening in a crossing mode. The actuator and the cantilever beam are used for constructing the active one-way micro-valve assembly, the active one-way micro-valve assembly is matched with the motion execution assembly, cooling gas is guided to the fluid chamber adjacent to the hot end of the electronic equipment in a one-way mode, then heated air is exhausted, the heat dissipation effect is achieved, ultrasonic waves generated by high working frequency and vibration of the piezoelectric film layer are inaudible, and the heat dissipation effect is good. The system has the advantages of no noise and low power consumption.

A MEMS device is provided that includes a piezoelectric element including a piezoelectric membrane including a ferroelectric and configured to vibrate based on an application of a voltage. A device may include a diode portion electrically connected in parallel to the piezoelectric element and including a diode.

A method for manufacturing a piezoelectric film including a monocrystalline or polycrystalline piezoelectric material in which a particular oriented crystal axis is inclined from a direction perpendicular or substantially perpendicular to the film, includes preparing a substrate including a single crystal with a same rotational symmetry about a particular substrate crystal axis as a rotational symmetry about the particular oriented crystal axis in the piezoelectric material, and the particular substrate crystal axis has a same inclination as an inclination of the particular oriented crystal axis, and forming a piezoelectric film including the piezoelectric material on the substrate by an epitaxial process.

Various exemplary embodiments relate to an acoustic resonator. The acoustic wave resonator may include a substrate, a piezoelectric film attached to the substrate, and a plurality of electrodes. The piezoelectric film is provided with a plurality of grooves, and two adjacent grooves define a ridge between them. And each electrode is arranged in the corresponding groove. Each electrode includes two side portions, each side portion at least partially covering a respective sidewall of the recess.

To provide a semiconductor substrate on which a piezoelectric film having high piezoelectric properties can be formed.SOLUTION: A semiconductor substrate according to the present invention includes a silicon single crystal substrate, a metal film formed on the silicon single crystal substrate and oriented in (111), and an oxide electrode thin film having a metal oxide layer SrRuO3 formed on the metal film, and the orientation of the SrRuO3 film is (001).SELECTED DRAWING: Figure 4

A piezoelectric element includes, a substrate, a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode, the first electrode, the first piezoelectric film, the second electrode, the second piezoelectric film, and the third electrode being provided on the substrate, a seed layer is provided only between the first electrode and the first piezoelectric film or between the second electrode and the second piezoelectric film,, the other piezoelectric film that is provided on the seed layer satisfies, in a case in which a positive-side coercive voltage is denoted by Vcr+ and a negative-side coercive voltage is denoted by Vcr, |Vcr++Vcr−|<|Vcr+−Vcr−|, and satisfies, in a case in which a positive-side coercive voltage is denoted by Vcf+ and a negative-side coercive voltage is denoted by Vcf− in the one piezoelectric film, |Vcf+−Vcf−|<|Vcr+−Vcr−|.

Exemplary multimeter-wave acoustic resonators and methods employing intermediate layers in the fabricating of piezoelectric devices based on thin-film lithium niobate / lithium tantalate or aluminum nitride / scandium aluminum nitride on a substrate in a film stack that can use higher order first and third antisymmetric bulk acoustic tones. In some embodiments, the acoustic resonator comprises a base substrate of a material with low electromagnetic loss, a piezoelectric film layer that is suspended over the base substrate, and an interdigitated electrode (IDE) array formed by a pair of independently addressable microelectrode arrays disposed on a top surface of the piezoelectric film layer to resonantly vibrate at a range of frequencies greater than 6 GHz. The piezoelectric film layer was formed over an intermediate or sacrificial layer positioned between the base substrate and the piezoelectric film layer and then etched to provide the piezoelectric film layer suspended over the base substrate.

An acoustic wave device includes a piezoelectric film including a piezoelectric layer made of lithium niobate, a first interdigitated electrode including a first busbar and first electrode fingers, a second interdigitated electrode including a second busbar and second electrode fingers and interdigitated with the first electrode fingers, and a third electrode including third electrode fingers side by side with the first and second electrode fingers, connected to a potential different from potentials of the first and second interdigitated electrodes and a connection electrode connecting adjacent third electrode fingers to each other. The connection electrode connects ends of adjacent third electrode fingers closer to at least the first busbar. The connection electrode is between at least the first busbar and ends of the second electrode fingers. Mass-addition films are provided in at least a portion of at least one of first, second, and third gap regions.

The invention relates to a piezoelectric trench interposed with a heavy metal electrode of a surface acoustic wave resonator. A surface acoustic wave (SAW) resonator apparatus is provided. The SAW resonator device includes a first electrode positioned on an upper surface of a piezoelectric film. The first electrode may include a plurality of layers, wherein one layer of the plurality of layers is a first heavy metal layer. The SAW resonator device may also include a first piezoelectric trench (PZT) positioned adjacent to the first electrode. The first PZT includes a recess in the piezoelectric film.

Provided is a piezoelectric stack including: a substrate having a main surface with a diameter of 3 inches or more; and a piezoelectric film on the substrate, comprising an alkali niobium oxide containing K, Na, Nb, and O, wherein in the piezoelectric film, a composition of K, Na, and Nb satisfies a relationship of 0.94≤(K+Na) / Nb≤1.03 over an entire inner region of the main surface of the piezoelectric film, excluding its periphery.

The present invention provides an actuator capable of suppressing a decrease in the vibration displacement of a piezoelectric element, a liquid discharge head, a liquid discharge device, and a method for manufacturing the actuator. [Solution] The actuator 110 is laminated on a flow channel substrate 100, which is a substrate on which a pressurized liquid chamber 4 is formed, and comprises a vibrating membrane 103 that forms part of the wall surface of the pressurized liquid chamber 4, and a piezoelectric element 5 arranged on the side of the vibrating membrane 103 opposite to the side that forms the wall surface of the pressurized liquid 4. The insulating film 8 that electrically insulates at least the second lead wiring, which is a wiring portion drawn out from the second electrode 53, from the piezoelectric membrane 52 and the first electrode 51 has an insulating film opening 8a, and the central part of the second electrode 51 is an area that is not covered by the insulating film 8.

A method of manufacturing an acoustic wave device includes preparing a substrate, preparing a support, providing a buffer layer on the substrate, providing a piezoelectric film on the buffer layer, joining the piezoelectric film of a multilayer body including the substrate, the buffer layer, and the piezoelectric film to the support, and removing the buffer layer and the substrate from the piezoelectric film. (|LS−LB| / LS)×100[%]≤20[%], and (|LP−LB| / LP)×100[%]≤10[%], where LS is a lattice constant of the substrate, LB is a lattice constant of the buffer layer, and LP is a lattice constant of the piezoelectric film.

A piezoelectric element (100) comprises: a substrate (10); a transmission-side unit (20) that is disposed on the substrate and transmits sound waves; and a reception-side unit (30) that is disposed on the substrate and receives sound waves. The transmission-side unit includes: a plurality of transmission-side piezoelectric layers (21); and a plurality of transmission-side electrodes (22) that are disposed so as to sandwich the respective transmission-side piezoelectric layers. The reception-side unit includes: one or more reception-side piezoelectric layers (31); and a plurality of reception-side electrodes (32) that are disposed so as to sandwich the respective one or more reception-side piezoelectric layers. The number of the transmission-side piezoelectric layers is greater than the number of the reception-side piezoelectric layers.

A piezoelectric sensing module comprising: a polyvinylidene fluoride (PVDF) piezoelectric film, a first electrode layer including a plurality of receiver electrodes arranged in a first pattern that enables sensing of a position of an input object on a touch surface using the PVDF piezoelectric film, and a second electrode layer including at least one common electrode, wherein the second electrode layer is between the PVDF piezoelectric film and the touch surface, and the PVDF piezoelectric film is disposed between the first electrode layer and the second electrode layer.

A transducer includes: a film support portion having a hollow portion; a vibration film displaceable in a film thickness direction; a piezoelectric element, the piezoelectric element including a pair of electrodes and a piezoelectric film; and in regions overlapping the hollow portion, a plurality of first regions having a first total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, and a plurality of second regions having a second total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, the second total film thickness being different from the first total film thickness. The first regions and the second regions are alternately arranged, and one of the first regions is adjacent to a connection portion between the film support portion and the vibration film.

Provided is a synaptic device including a substrate, a channel layer on the substrate, a gate dielectric layer on the channel layer; and a gate electrode on the gate dielectric layer, wherein the gate dielectric layer includes a charge supply dielectric film and a piezoelectric film, wherein the charge supply dielectric film includes a metal oxide or metal sulfide, wherein the piezoelectric film includes a piezoelectric material that converts a pressure stimulation into an electrical signal, wherein accordance to a change in a signal applied to the gate electrode, a magnitude and aspect of a current flowing through the channel layer are changed.

The present invention provides a polymer-based piezoelectric composite material from which a piezoelectric film capable of outputting a higher sound pressure and exhibiting excellent flexibility even in a low-temperature environment is obtained in a case of using a piezoelectric speaker, a piezoelectric film formed of the polymer-based piezoelectric composite material, and a piezoelectric speaker and a flexible display which are formed of the piezoelectric film. The polymer-based piezoelectric composite material of the present invention is a polymer-based piezoelectric composite material including a polymer matrix which contains a polymer containing a group represented by Formula (1), and piezoelectric particles.*-L1-(CR1R2)n—CN  Formula (1)In Formula (1), L1 represents a divalent linking group excluding a urethane group. R1 and R2 each independently represent a hydrogen atom, an alkyl group, or an aryl group. n represents an integer of 3 or greater. * represents a bonding position with respect to the main chain of a polymer.

The present invention relates to the technical field of energy harvesting equipment, and provides a continuous vibration energy harvesting device. The continuous vibration energy harvesting device comprises a shell, a coil skeleton is provided inside the shell, and the two ends of the coil skeleton are elastically connected to the shell by springs. A magnet is provided in the coil skeleton, and the two ends of the magnet are fixedly connected to the shell. A first coil and a second coil are wound around the outer sides of the two ends of the coil skeleton, and two piezoelectric film assemblies are provided on opposite sides of the coil skeleton. Each piezoelectric film assembly includes two piezoelectric films arranged at intervals, and the two piezoelectric films are electrically connected to the first coil and the second coil respectively. The continuous vibration energy harvesting device provided by the present invention can combine the piezoelectric effect and the electromagnetic effect to perform vibration energy harvesting, effectively improving the energy conversion efficiency and the power output efficiency.

An apparatus includes a die, a bonding layer, and a film. The die includes a semiconductor substrate, a metallization structure on the semiconductor substrate, and a dielectric material around at least a part of the metallization structure. The bonding layer is on the metallization structure. The film is attached on the bonding layer. The film includes a piezoelectric material.

An elastic wave device in which generation of useless waves caused by third harmonic excitation is suppressed is provided with: a plurality of elastic wave resonators which are connected to a path connecting a first input / output terminal and a second input / output terminal, and which have IDT electrodes disposed on a piezoelectric substrate, the elastic wave resonators being connected to the path connecting the first input / output terminal and the second input / output terminal, and the elastic wave resonators being connected to the path connecting the first input / output terminal and the second input / output terminal; the piezoelectric substrate has a laminated structure of a piezoelectric film, a low-sound-velocity film, and a high-sound-velocity film, the electrode finger wavelength of the IDT electrode is [lambda] (m), the film thickness of the piezoelectric film is t1 (m), the film thickness of the plurality of electrode fingers is t2 (m), t1 / [lambda] is the film thickness wavelength ratio A of the piezoelectric film, t2 / [lambda] is the film thickness wavelength ratio B of the plurality of electrode fingers, the density of the piezoelectric film is x (g / cm < 3 >), the density of the IDT electrode is y (g / cm < 3 >), (A / x + B / y) is a mass coefficient, and (A / x + B / y) is a mass coefficient. The elastic wave resonator connected closest to the first input / output terminal has a mass coefficient of 0.95 * 0.054 or more and 1.05 * 0.054 or less.

A liquid ejection head is provided that can suppress peeling from end portions of a piezoelectric layer and an electrode layer and peeling from wiring above a contact portion while ensuring a required amount of displacement of a piezoelectric element. To this end, a protective film is formed so as to cover a partial region including an end portion of a first electrode below a piezoelectric film, a partial region including an end portion of a second electrode above the piezoelectric film, and a second layer wiring above a contact portion, across a center of the piezoelectric film.

The invention provides a piezoelectric type micro-electro-mechanical device and a preparation method thereof, and relates to the technical field of semiconductors, and the preparation method comprises the steps: providing a base layer, at least sequentially forming a metal electrode layer, a piezoelectric film layer and a patterned hard mask layer on the base layer, and enabling the patterned hard mask layer to partially cover the piezoelectric film layer; performing dry etching on an area outside the patterned hard mask layer on the piezoelectric film layer so as to form a groove in the piezoelectric film layer; cleaning the groove by an alkaline wet method so as to remove the polymer generated and remained by etching; when the metal electrode layer is not exposed, performing dry etching and alkaline wet cleaning on the groove again until the piezoelectric film layer forms a target shape and the metal electrode layer is exposed; and removing the patterned hard mask layer. And the groove etching of the piezoelectric film layer is realized in a cyclic operation mode of combining dry etching with an alkaline wet process. The patterning hard mask solves the new problems of morphology deformation and abnormity under the repeated etching and cleaning technological process. A self-developed DEKC solution is used in the wet cleaning process, and the integrity of the structure morphology is protected.