74 results about "Piezoelectric membrane" patented technology

Provided is a piezoelectric stack including: a substrate having a main surface with a diameter of 3 inches or more; and a piezoelectric film on the substrate, comprising an alkali niobium oxide containing K, Na, Nb, and O, wherein in the piezoelectric film, a composition of K, Na, and Nb satisfies a relationship of 0.94≤(K+Na) / Nb≤1.03 over an entire inner region of the main surface of the piezoelectric film, excluding its periphery.

The present invention provides an actuator capable of suppressing a decrease in the vibration displacement of a piezoelectric element, a liquid discharge head, a liquid discharge device, and a method for manufacturing the actuator. [Solution] The actuator 110 is laminated on a flow channel substrate 100, which is a substrate on which a pressurized liquid chamber 4 is formed, and comprises a vibrating membrane 103 that forms part of the wall surface of the pressurized liquid chamber 4, and a piezoelectric element 5 arranged on the side of the vibrating membrane 103 opposite to the side that forms the wall surface of the pressurized liquid 4. The insulating film 8 that electrically insulates at least the second lead wiring, which is a wiring portion drawn out from the second electrode 53, from the piezoelectric membrane 52 and the first electrode 51 has an insulating film opening 8a, and the central part of the second electrode 51 is an area that is not covered by the insulating film 8.

An apparatus includes a die, a bonding layer, and a film. The die includes a semiconductor substrate, a metallization structure on the semiconductor substrate, and a dielectric material around at least a part of the metallization structure. The bonding layer is on the metallization structure. The film is attached on the bonding layer. The film includes a piezoelectric material.

An embedded hydrophone sensor in a hydraulic body such as pipe, fitting, or flow meter (PIPE) that includes a thinned "pipe" wall membrane of radius R, that has a profile that provides sufficient flexural deflection under pressure with effective thickness t_pipe. A piezo-electric element connected to the pipe membrane using a glue or mechanical means, while the piezo membrane thickness should be less than pipe_membrane thickness multiplied by (maximum_strain_Piezo / maximum_strain_Pipe).

To provide a piezoelectric migration film including a patterned piezoelectric electrode property for generating an image via an electrophoretic medium.SOLUTION: A thin piezophoretic film and a display film comprising the thin piezophoretic film. In some embodiments, the piezoelectric material of the piezophoretic film may be patterned with a high voltage electric field after fabrication of the piezophoretic film. Such films are useful as security markers, authentication films, or sensors. The film is generally flexible. Some films are less than 100 μm thick. Displays formed from the films do not require an external power source.SELECTED DRAWING: Figure 4C

The embodiment of the invention discloses an MEMS loudspeaker and a preparation method thereof. The MEMS loudspeaker comprises a vibrating diaphragm layer and a supporting structure layer which are stacked in the thickness direction, the vibrating diaphragm layer comprises a vibrating diaphragm area; the vibrating diaphragm layer of the vibrating diaphragm area comprises a plurality of piezoelectric film layers which are stacked in the thickness direction; the diaphragm area comprises a separation slit; the supporting structure layer comprises a cavity, and the vibrating diaphragm area is located in the projection area range of the cavity in the thickness direction. According to the embodiment of the invention, the driving efficiency is improved through the multi-layer piezoelectric film layer structure, and the working stress distribution is optimized through the separation slits, so that the emission performance and the signal consistency of the device are jointly improved.

The application discloses a high-beta-crystal-phase polyvinylidene fluoride fiber piezoelectric film and a preparation method thereof, wherein the preparation method comprises the following steps: step one: polyvinylidene fluoride resin with a weight average molecular weight of 500,000-800,000, a long branched chain content of 1.2‰-5‰, and a 7% mass fraction NMP solution rotary viscosity of 5000-8000 mpa.s at 25 DEG C is prepared by emulsion polymerization of polyvinylidene fluoride monomer and difluoro-monochloroethane; and step two: the polyvinylidene fluoride resin obtained in step one is made into an electrostatic spinning precursor solution, and the electrostatic spinning precursor solution is spun and film-formed by an electrostatic spinning method. The polyvinylidene fluoride nanofiber film with finer and higher beta-crystal-phase content can be prepared by adjusting the content of the long branched chain and the viscosity of the electrostatic spinning solution.

An integrated bulk acoustic wave resonator-capacitor comprises a membrane including a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, and a lower electrode disposed on a lower surface of the piezoelectric film, a resonator region of the membrane defining a main active domain in which a main acoustic wave is generated during operation, and a capacitor region of the membrane surrounding the resonator region, the capacitor region including a layer of conductive material disposed on the upper electrode, an inner capacitor raised frame defined on an inner peripheral region of the layer of conductive material, and an outer capacitor raised frame defined on an outer peripheral region of the layer of conductive material.

There is provided a piezoelectric stack including: a substrate; a bottom electrode film on the substrate; and a piezoelectric film on the bottom electrode film, the piezoelectric film being composed of a perovskite-type oxide represented by a general formula ABO3, with A site containing K and Na, and B site containing Nb, wherein when the piezoelectric film is divided into a surface layer region extending from an upper surface of the piezoelectric film to a predetermined depth toward the substrate, and a bulk region which is a region other than the surface layer region, a total atomic concentration of K and Na in the surface layer region is higher than a total atomic concentration of K and Na in the bulk region.

Provided are: a vibration portion having a base portion having a front end and a rear end facing the front end, and a plurality of vibration arms having fixed ends connected to the front end of the base portion and extending in a direction away from the front end, the plurality of vibration arms including at least one first vibration arm and a pair of second vibration arms on both sides of a first vibration arm group including the at least one first vibration arm in a direction crossing a long side direction; a holding portion provided at least partially around the vibration portion; and a holding arm having one end connected to the base portion and the other end connected to the holding portion, the plurality of vibration portions each having a piezoelectric film, and a lower electrode and an upper electrode facing each other with the piezoelectric film interposed therebetween, and a connection wiring connecting the upper electrodes of the pair of second vibration arms to each other is provided in a region of at least one of the base portion and the holding arm.

The invention discloses a piezoelectric film with bionic textures and a preparation method and application thereof, the piezoelectric film is formed by directionally stacking and depositing fibers with core-shell structures, the piezoelectric film has a gully-bulge alternating bionic morphology imitating human skin surface textures, and the aperture of the piezoelectric film is gradually increased from an attachment surface in the thickness direction; the fiber having the core-shell structure comprises: a core layer having a porous structure and containing modified molybdenum disulfide and polyester; the shell layer wraps the core layer, and the shell layer contains collagen; the piezoelectric film comprises a sensing unit area and a flexible connection area, the collagen crosslinking degree of the sensing unit area is larger than 75%, and the collagen crosslinking degree of the flexible connection area is 40%-55%. Under the synergistic effect of materials and structures, the piezoelectric film not only has a high piezoelectric constant, but also shows excellent mechanical properties, air permeability and moisture penetrability, and has wide application prospects in the fields of electronic skin, health monitoring and the like.

To provide a piezoelectric laminate having a piezoelectric film improved in adhesion to an upper electrode film.SOLUTION: A piezoelectric device comprising: a substrate; a piezoelectric film on the substrate; an upper adhesive layer on the piezoelectric film; and a lower adhesive layer on the upper adhesive layer, wherein the piezoelectric film is composed of a perovskite compound expressed by a general formula ABO3, where an A site includes K and Na, and a B site includes Nb, when the piezoelectric film is divided into a surface layer region extending from an upper surface of the piezoelectric film to a predetermined depth toward the substrate and a bulk region that is a region other than the surface layer region, a total atomic concentration of K and Na in the surface layer region is lower than a total atomic concentration of K and Na in the bulk region.SELECTED DRAWING: Figure 1

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

This invention provides an antibacterial and repair-promoting piezoelectric film, its preparation method, and its application, belonging to the field of piezoelectric material technology. The method involves in-situ self-assembly of Fe-MOF on the surface of BTO, followed by further loading with DHA to synthesize an electrically controlled drug-release, antibacterial, and repair-promoting nanocomposite, BTO / Fe-MOF / DHA. BTO / Fe-MOF / DHA is then added to the surface of semi-cured PDMS to form an antibacterial and repair-promoting piezoelectric film, PDMS-BTO / Fe-MOF / DHA. When the PDMS-BTO / Fe-MOF / DHA piezoelectric film is subjected to ultrasonic stimulation, BTO converts mechanical energy into electrical energy, releasing Fe from the Fe-MOF... 3+ Reduced to Fe 2+ Fe-MOF degrades and releases DHA, and ultimately, Fe... 2+ Reacting with synchronously released DHA, it produces a large amount of toxic ROS, which damages proteins and nucleic acids, inducing bacterial death. The antibacterial and repair-promoting piezoelectric membrane of the present invention generates a piezoelectric potential during mechanical deformation caused by animal movement and induces EF at the wound site to promote wound healing. This antibacterial and repair-promoting piezoelectric membrane shows great potential in the future treatment of bacterial infected wounds.

The present invention provides a piezoelectric film having scandium aluminum nitride, carbon, and oxygen, the oxygen concentration being 0.01 at% or more and 0.35 at% or less. The invention also provides an MEMS sensor provided with the piezoelectric film.

A piezoelectric microelectromechanical systems (MEMS) microphone is provided comprising a substrate including walls defining a cavity and at least one of the walls defining an anchor region, a piezoelectric film layer supported by the substrate at the anchor region such that the piezoelectric film layer is cantilevered, the piezoelectric film layer being formed to introduce differential stress between a front surface of the piezoelectric film layer oriented away from the cavity and a back surface of the piezoelectric film layer oriented towards the cavity such that the piezoelectric film layer is bent into the cavity, and an electrode disposed over the piezoelectric film layer and adjacent the anchor region. A method of manufacturing such a MEMS microphone is also provided.

The invention belongs to the technical field of semiconductor manufacturing, and provides a POI substrate, a manufacturing process thereof and a surface acoustic wave filter.The manufacturing process comprises the steps that a piezoelectric material film layer with a first bonding face is provided, ion implantation is carried out from the first bonding face, then gluing, exposure, developing and etching are sequentially carried out on the first bonding face, and the POI substrate is obtained. Forming an opening in the piezoelectric material film layer; and the piezoelectric material film layer with the holes is bonded with a target substrate, then heat treatment is carried out, the injection surface is subjected to interface separation, a piezoelectric layer is reserved and formed on the target substrate, and the POI substrate is obtained. By means of combining photoetching and etching, a hole is formed in one side of a bonding surface of a piezoelectric material film layer, and the hole penetrates into an injection surface of ion injection, so that the hole can provide a release window for thermal stress generated in the subsequent heat treatment process, the quality of the transferred piezoelectric film layer is effectively improved, the uniformity and the integrity are improved, and the service life of the transferred piezoelectric film layer is prolonged. And the yield and the efficiency can be improved, and the cost can be reduced.

The application provides a piezoelectric thin film preparation device and a preparation method thereof. The piezoelectric thin film preparation device comprises a deposition growth cavity module and an annealing cavity structure. The deposition growth cavity module comprises at least an adhesion electrode deposition cavity structure, a buffer deposition cavity structure, a seed deposition cavity structure and a piezoelectric deposition cavity structure. The annealing cavity structure is configured to anneal at least the seed layer and / or the piezoelectric film layer to finally form the piezoelectric thin film. The piezoelectric thin film preparation device of the application additionally provides the seed deposition cavity structure, so that low-energy nucleation points can be formed on the surface of the buffer layer, so that the atoms of the piezoelectric film layer can be directly oriented and rapidly sputtered on the cell template, so as to reduce the nucleation activation energy, thereby effectively reducing the crystallization temperature of the atoms. At the same time, the annealing cavity structure can inject high temperature, so that the atoms can rapidly crystallize on the cell template, and the substrate still maintains low temperature in a short period of time, thereby reducing the influence on the substrate through the dual effects of rapid crystallization of the atoms and reduction of the nucleation activation energy.

The present invention relates to a piezoelectric speaker. A piezoelectric speaker (10) has a piezoelectric film (35), a first bonding layer (51), and an intermediate layer (40). The piezoelectric film (35) includes a first electrode (61), a second electrode (62), and a piezoelectric body (30) sandwiched between the first electrode (61) and the second electrode (62). The first bonding layer (51) is an adhesive or cohesive layer. The intermediate layer (40) is disposed between the piezoelectric film (35) and the first bonding layer (51). The entire main surface of both main surfaces of the piezoelectric film (35) vibrates up and down.

The invention discloses an active organ wafer which comprises a cover layer, a substrate layer, a porous membrane, at least one first piezoelectric membrane and a control device. The cover layer is provided with a first upper surface and a first lower surface which are opposite, the first lower surface is provided with a first flow channel, the first upper surface is provided with at least one first opening, the at least one first opening is communicated with the first flow channel, and the two ends of the first flow channel are connected with the first inlet and the first outlet respectively. The base layer is arranged below the cover layer and provided with a second upper surface and a second lower surface which are opposite, the second upper surface is provided with a second flow channel, the two ends of the second flow channel are connected with the second inlet and the second outlet respectively, and part of the first flow channel corresponds to part of the second flow channel. The porous membrane is disposed between the cap layer and the base layer. The at least one first piezoelectric film is sealed in the at least one first opening. And the control device is electrically connected with the at least one first piezoelectric film.

The present invention provides an elastic wave device, a filter, and a multiplexer capable of suppressing damage to electrodes and piezoelectric films. The elastic wave device (100) includes: a substrate (10); a piezoelectric film (30) disposed on the substrate (10) having a through hole (32); and a lower electrode (20) and an upper electrode (40) disposed on the substrate (10) with the piezoelectric film (30) sandwiched between them, such that a resonant region (50) of the lower electrode (20) and the upper electrode (40) sandwiching the piezoelectric film (30) is formed around the through hole (32), and the lower electrode (20) is fixed to the substrate (10) in a non-resonant region (52) surrounded by the resonant region (50).

A piezoelectric stack including: a substrate; an electrode film; and a piezoelectric film as a poly-crystal film comprising an alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0<x<1), wherein the piezoelectric film contains at least one element selected from a group consisting of Cu and Mn, and an amount of the element present at a grain boundary of crystals constituting the piezoelectric film is greater than that of the element present in a matrix phase of the crystals.

A method for producing a device comprising a piezoelectric membrane adjacent at least one cavity includes providing a carrier substrate having surfaces defining the at least one cavity extending into the carrier substrate at a first face of the carrier substrate. A layer of piezoelectric material is deposited on a face of a donor substrate. The layer of piezoelectric material is bonded to the carrier substrate to join the donor substrate and the carrier substrate, and after the bonding, the donor substrate is split along a plane within the donor substrate so as to transfer a membrane comprising the layer of piezoelectric material to the carrier substrate adjacent the at least one cavity. A donor substrate for use in such a method includes a fragile plane therein delimiting a surface layer, and a layer of piezoelectric material having a thickness greater than 500 nm on the surface layer.

A transducer includes: a film support portion; a vibration film that is connected to the film support portion and capable of displacing in a thickness direction; a base material having an opposed surface that is opposed to the vibration film; and a first piezoelectric element that is provided with a pair of electrodes and a piezoelectric film sandwiched between the pair of electrodes, and is arranged on the vibration film, in which the transducer maintains a pressure in a space between the base material and the vibration film so as to keep displacement of the vibration film within a certain range.

The present disclosure is provided with a substrate, a lower electrode stacked on the substrate, a piezoelectric film stacked on the lower electrode and composed of a piezoelectric body, and an upper electrode stacked on the piezoelectric film. A thin film portion is formed of the lower electrode, the piezoelectric film, and the upper electrode due to a recess formed in the substrate opposite the lower electrode. An impurity layer is formed in a surface layer of the piezoelectric film to contain a second element different from the first element, when an element constituting the piezoelectric body is the first element.

This piezoelectric actuator is provided with a laminated piezoelectric element and a pre-drive circuit. A first piezoelectric film and a second piezoelectric film both have spontaneous polarization aligned in a film thickness direction, and have the same orientation of spontaneous polarization. ΔVcf < ΔVcr - 1.0 is satisfied where ΔVcf is the absolute value |Vcf+ - Vcf-| of the difference between two coercive voltages in a hysteresis curve of one piezoelectric film of the first piezoelectric film and the second piezoelectric film, and ΔVcr is the absolute value |Vcr+ - Vcr-| of the difference between two coercive voltages in the hysteresis curve of the other piezoelectric film thereof. A drive circuit causes the one piezoelectric film to generate an electric field in the same orientation as the orientation of spontaneous polarization, and causes the other piezoelectric film to generate an electric field in the orientation opposite the orientation of spontaneous polarization.

This invention provides an acoustic resonator, comprising a substrate, a piezoelectric film structure, interdigital transducers, and a trench structure. The piezoelectric film structure is located above the substrate and includes a first piezoelectric layer and a second piezoelectric layer stacked sequentially from bottom to top. The polarity directions of the first and second piezoelectric layers are opposite. The interdigital transducer is located on the second piezoelectric layer and includes multiple first and second interdigital electrodes spaced apart and alternately arranged in a first direction, extending along a second direction. The trench structure is located within the piezoelectric film structure and includes a first trench and a second trench. The first and second trenches are symmetrically distributed along the first direction on both sides of the regions where the multiple first and second interdigital electrodes are located. The acoustic resonator of this invention can achieve low-frequency mode suppression, high-frequency mode enhancement, and efficient multi-band integration without reducing the total film thickness, thereby improving the device's quality factor.

An interdigital transducer electrode that is provided on a piezoelectric film includes a first busbar, a second busbar, multiple first electrode fingers, and multiple second electrode fingers. The first electrode fingers and the second electrode fingers overlap in a region in a direction in which an acoustic wave propagates, and the region includes a central region, a first edge region that is located between the central region and the first busbar, and a second edge region that is located between the central region and the second busbar. An acoustic velocity in the first edge region and the second edge region is lower than an acoustic velocity in the central region. An acoustic velocity in a busbar region is higher than the acoustic velocity in the central region.

The invention relates to the technical field of heat dissipation, and discloses a piezoelectric refrigeration fan and electronic equipment. The piezoelectric refrigeration fan comprises a shell and a piezoelectric vibration assembly, wherein the shell is provided with a cavity; the piezoelectric vibration assembly is arranged in the cavity and divides the cavity in the first direction. The piezoelectric vibration assembly comprises at least two piezoelectric vibration units which are arranged at intervals in the first direction, and the interval between every two adjacent piezoelectric vibration units in the at least two piezoelectric vibration units forms an air guide channel. The piezoelectric vibration unit comprises a vibrating diaphragm and a piezoelectric diaphragm arranged on at least one side of the vibrating diaphragm in the first direction, part of the periphery of the vibrating diaphragm is fixed to the shell, and the vibrating diaphragm is made of organic polymers. The piezoelectric film drives the vibrating diaphragm to vibrate along a first direction and compress air in the cavity; in the first direction, the shell is provided with an air channel communicated with the cavity on at least one side of the piezoelectric vibration assembly. According to the piezoelectric refrigeration fan, the size can be reduced, the occupied space of the piezoelectric refrigeration fan in electronic equipment is reduced, the airflow direction is accurately controlled, noise is lowered, and the service life is prolonged.

The present application provides a MEMS device and a preparation method therefor. The MEMS device includes a piezoelectric diaphragm, a blocking layer disposed on a side of the piezoelectric diaphragm, a sacrificial layer connected to a side of the blocking layer back away from the piezoelectric diaphragm, and a substrate connected to a side of the sacrificial layer back away from the blocking layer. The substrate includes a wall connected to a side of the sacrificial layer back away from the blocking layer and forming a cavity, and a mass block disposed on the side of the sacrificial layer back away from the blocking layer and accommodated within the cavity, which is formed by etching the substrate and is spaced apart from the wall. The mass block can drive the piezoelectric diaphragm to produce significant mechanical deformation, improving the sensitivity and response efficiency of the MEMS device.