151 results about "Piezoelectric membrane" patented technology

The invention relates to a double-layer dressing for promoting wound healing and inhibiting scars and a preparation method and application thereof.The double-layer dressing comprises a hydrogel layer and a piezoelectric film layer compounded on the hydrogel layer, and the piezoelectric film layer is prepared by mixing an organic piezoelectric material, a ferroelectric material and an organic solvent and then conducting an electrostatic spinning technology; the hydrogel layer is formed by curing a methacrylic anhydride acellular extracellular matrix, methacrylic anhydride catechol chitosan and conductive nanoparticles under the action of a curing agent. The lower skin contact layer of the double-layer dressing is the hydrogel layer, so that the directional growth of fibroblasts is favorably induced; the upper dressing is a piezoelectric material composite ferroelectric material, is beneficial to piezoelectric stimulation re-induction function recovery after final skin repair and guidance of directional growth of wound cells, and has good skin wound induction repair and scar inhibition effects.

A method for manufacturing a piezoelectric film including a monocrystalline or polycrystalline piezoelectric material in which a particular oriented crystal axis is inclined from a direction perpendicular or substantially perpendicular to the film, includes preparing a substrate including a single crystal with a same rotational symmetry about a particular substrate crystal axis as a rotational symmetry about the particular oriented crystal axis in the piezoelectric material, and the particular substrate crystal axis has a same inclination as an inclination of the particular oriented crystal axis, and forming a piezoelectric film including the piezoelectric material on the substrate by an epitaxial process.

A piezoelectric element includes, a substrate, a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode, the first electrode, the first piezoelectric film, the second electrode, the second piezoelectric film, and the third electrode being provided on the substrate, a seed layer is provided only between the first electrode and the first piezoelectric film or between the second electrode and the second piezoelectric film,, the other piezoelectric film that is provided on the seed layer satisfies, in a case in which a positive-side coercive voltage is denoted by Vcr+ and a negative-side coercive voltage is denoted by Vcr, |Vcr++Vcr−|<|Vcr+−Vcr−|, and satisfies, in a case in which a positive-side coercive voltage is denoted by Vcf+ and a negative-side coercive voltage is denoted by Vcf− in the one piezoelectric film, |Vcf+−Vcf−|<|Vcr+−Vcr−|.

Provided is a piezoelectric stack including: a substrate having a main surface with a diameter of 3 inches or more; and a piezoelectric film on the substrate, comprising an alkali niobium oxide containing K, Na, Nb, and O, wherein in the piezoelectric film, a composition of K, Na, and Nb satisfies a relationship of 0.94≤(K+Na) / Nb≤1.03 over an entire inner region of the main surface of the piezoelectric film, excluding its periphery.

The present invention provides an actuator capable of suppressing a decrease in the vibration displacement of a piezoelectric element, a liquid discharge head, a liquid discharge device, and a method for manufacturing the actuator. [Solution] The actuator 110 is laminated on a flow channel substrate 100, which is a substrate on which a pressurized liquid chamber 4 is formed, and comprises a vibrating membrane 103 that forms part of the wall surface of the pressurized liquid chamber 4, and a piezoelectric element 5 arranged on the side of the vibrating membrane 103 opposite to the side that forms the wall surface of the pressurized liquid 4. The insulating film 8 that electrically insulates at least the second lead wiring, which is a wiring portion drawn out from the second electrode 53, from the piezoelectric membrane 52 and the first electrode 51 has an insulating film opening 8a, and the central part of the second electrode 51 is an area that is not covered by the insulating film 8.

The present invention provides a polymer-based piezoelectric composite material from which a piezoelectric film capable of outputting a higher sound pressure and exhibiting excellent flexibility even in a low-temperature environment is obtained in a case of using a piezoelectric speaker, a piezoelectric film formed of the polymer-based piezoelectric composite material, and a piezoelectric speaker and a flexible display which are formed of the piezoelectric film. The polymer-based piezoelectric composite material of the present invention is a polymer-based piezoelectric composite material including a polymer matrix which contains a polymer containing a group represented by Formula (1), and piezoelectric particles.*-L1-(CR1R2)n—CN  Formula (1)In Formula (1), L1 represents a divalent linking group excluding a urethane group. R1 and R2 each independently represent a hydrogen atom, an alkyl group, or an aryl group. n represents an integer of 3 or greater. * represents a bonding position with respect to the main chain of a polymer.

The present invention relates to the technical field of energy harvesting equipment, and provides a continuous vibration energy harvesting device. The continuous vibration energy harvesting device comprises a shell, a coil skeleton is provided inside the shell, and the two ends of the coil skeleton are elastically connected to the shell by springs. A magnet is provided in the coil skeleton, and the two ends of the magnet are fixedly connected to the shell. A first coil and a second coil are wound around the outer sides of the two ends of the coil skeleton, and two piezoelectric film assemblies are provided on opposite sides of the coil skeleton. Each piezoelectric film assembly includes two piezoelectric films arranged at intervals, and the two piezoelectric films are electrically connected to the first coil and the second coil respectively. The continuous vibration energy harvesting device provided by the present invention can combine the piezoelectric effect and the electromagnetic effect to perform vibration energy harvesting, effectively improving the energy conversion efficiency and the power output efficiency.

An apparatus includes a die, a bonding layer, and a film. The die includes a semiconductor substrate, a metallization structure on the semiconductor substrate, and a dielectric material around at least a part of the metallization structure. The bonding layer is on the metallization structure. The film is attached on the bonding layer. The film includes a piezoelectric material.

The present invention provides a MEMS air-cooled heat dissipation device and its use method, comprising: a housing, a microvalve assembly, and a motion actuator assembly. The microvalve assembly includes a cantilever beam, a first diaphragm, and an air chamber. The cantilever beam is attached to an actuator to generate a driving force in the normal direction on the cantilever beam, thereby utilizing the cantilever beam to selectively open or close a through hole. The motion actuator assembly includes a second diaphragm attached to the housing to separate a first fluid chamber from a second fluid chamber. The second diaphragm includes an opening, and a diaphragm and a piezoelectric actuator are arranged across the opening. The present invention utilizes the actuator and cantilever beam to construct an active one-way microvalve assembly. The microvalve assembly, in conjunction with the motion actuator assembly, guides cooling gas unidirectionally toward a fluid chamber adjacent to the hot end of the electronic device, thereby discharging heated air and achieving a heat dissipation effect. Utilizing the high operating frequency of the piezoelectric film layer, the ultrasonic waves generated by the vibration are inaudible, resulting in the advantages of being noiseless and having low power consumption.

An embedded hydrophone sensor in a hydraulic body such as pipe, fitting, or flow meter (PIPE) that includes a thinned "pipe" wall membrane of radius R, that has a profile that provides sufficient flexural deflection under pressure with effective thickness t_pipe. A piezo-electric element connected to the pipe membrane using a glue or mechanical means, while the piezo membrane thickness should be less than pipe_membrane thickness multiplied by (maximum_strain_Piezo / maximum_strain_Pipe).

To provide a piezoelectric migration film including a patterned piezoelectric electrode property for generating an image via an electrophoretic medium.SOLUTION: A thin piezophoretic film and a display film comprising the thin piezophoretic film. In some embodiments, the piezoelectric material of the piezophoretic film may be patterned with a high voltage electric field after fabrication of the piezophoretic film. Such films are useful as security markers, authentication films, or sensors. The film is generally flexible. Some films are less than 100 μm thick. Displays formed from the films do not require an external power source.SELECTED DRAWING: Figure 4C

The application provides an acoustic piezoelectric film device structure, comprising: a support body; a piezoelectric film layer structure covering an area surrounded by the support body and fixedly connected to the support body at the periphery, the piezoelectric film layer structure comprising a piezoelectric layer and an electrode layer covering the upper and lower surfaces of the piezoelectric layer, the piezoelectric film layer structure comprising an inner area and an outer area surrounding the inner area, and the inner area and the outer area having an electrode separation zone therebetween, the electrode separation zone separating the electrode layer into a central electrode layer and a peripheral electrode layer. The acoustic piezoelectric film layer structure designed by the application can reduce the warping degree of the piezoelectric film layer structure and control the increase of the width of the acoustic transmission channel of the slit area caused by warping, the electrode layer of the application fully covers the surface of the piezoelectric film layer, and the novel separation and series or parallel electrical connection mode between the longitudinal multiple piezoelectric layers and the transverse multiple electrode layers can realize the electromechanical conversion of the whole area of the piezoelectric film layer and improve the electromechanical conversion efficiency of the piezoelectric film device.

The embodiment of the invention discloses an MEMS loudspeaker and a preparation method thereof. The MEMS loudspeaker comprises a vibrating diaphragm layer and a supporting structure layer which are stacked in the thickness direction, the vibrating diaphragm layer comprises a vibrating diaphragm area; the vibrating diaphragm layer of the vibrating diaphragm area comprises a plurality of piezoelectric film layers which are stacked in the thickness direction; the diaphragm area comprises a separation slit; the supporting structure layer comprises a cavity, and the vibrating diaphragm area is located in the projection area range of the cavity in the thickness direction. According to the embodiment of the invention, the driving efficiency is improved through the multi-layer piezoelectric film layer structure, and the working stress distribution is optimized through the separation slits, so that the emission performance and the signal consistency of the device are jointly improved.

The application discloses a high-beta-crystal-phase polyvinylidene fluoride fiber piezoelectric film and a preparation method thereof, wherein the preparation method comprises the following steps: step one: polyvinylidene fluoride resin with a weight average molecular weight of 500,000-800,000, a long branched chain content of 1.2‰-5‰, and a 7% mass fraction NMP solution rotary viscosity of 5000-8000 mpa.s at 25 DEG C is prepared by emulsion polymerization of polyvinylidene fluoride monomer and difluoro-monochloroethane; and step two: the polyvinylidene fluoride resin obtained in step one is made into an electrostatic spinning precursor solution, and the electrostatic spinning precursor solution is spun and film-formed by an electrostatic spinning method. The polyvinylidene fluoride nanofiber film with finer and higher beta-crystal-phase content can be prepared by adjusting the content of the long branched chain and the viscosity of the electrostatic spinning solution.

An integrated bulk acoustic wave resonator-capacitor comprises a membrane including a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, and a lower electrode disposed on a lower surface of the piezoelectric film, a resonator region of the membrane defining a main active domain in which a main acoustic wave is generated during operation, and a capacitor region of the membrane surrounding the resonator region, the capacitor region including a layer of conductive material disposed on the upper electrode, an inner capacitor raised frame defined on an inner peripheral region of the layer of conductive material, and an outer capacitor raised frame defined on an outer peripheral region of the layer of conductive material.

There is provided a piezoelectric stack including: a substrate; a bottom electrode film on the substrate; and a piezoelectric film on the bottom electrode film, the piezoelectric film being composed of a perovskite-type oxide represented by a general formula ABO3, with A site containing K and Na, and B site containing Nb, wherein when the piezoelectric film is divided into a surface layer region extending from an upper surface of the piezoelectric film to a predetermined depth toward the substrate, and a bulk region which is a region other than the surface layer region, a total atomic concentration of K and Na in the surface layer region is higher than a total atomic concentration of K and Na in the bulk region.

To provide a laminate structure having an improved electromechanical coupling coefficient and an electronic device including the laminate structure.SOLUTION: A laminate structure 10 includes a substrate 11 including a main surface 11p, a buffer film 12 formed on the main surface 11p, and a piezoelectric film 13 formed on the buffer film 12. The substrate 11 is made of an Si (100) substrate including the main surface 11p made of an Si (100) plane or an SOI substrate including an SOI layer including a main surface made of the Si (100) plane. The buffer film 12 is epitaxially grown on the main surface 11p, is (100) oriented in a pseudo-cubic crystal display, and is made of a metal oxide represented by the following composition formula (Chemical Formula 1), and x satisfies 0≤x<1. The piezoelectric film 13 is made of a metal nitride containing AlN, and AlN contained in the metal nitride is oriented so that a (0001) plane is inclined with respect to the main surface 11p. (Hf1-xZrx)O2...(Chemical Formula 1)SELECTED DRAWING: Figure 1

Provided is a thin-film piezoelectric device having excellent piezoelectric characteristics and a large amount of displacement. The thin film piezoelectric device includes a substrate and a movable portion supported by the substrate. The movable part is provided with at least a buffer film that is provided on the substrate and contains zirconium oxide (ZrO2), a first electrode layer that is provided on the buffer film, a piezoelectric film that is provided on the first electrode layer, and a second electrode layer that is provided on the piezoelectric film. The piezoelectric film is formed by lead zirconate titanate (Pb (Zr, Ti) O3; pZT), barium titanate (BaTiO3; bT) or potassium sodium niobate ((K, Na) NbO3; the (001) or (100) alignment film is composed of a single crystal of (001) or (KNN). The piezoelectric film in the movable part expands and contracts in an in-plane direction in association with a d31 mode based on a piezoelectric or inverse piezoelectric effect, whereby the movable part moves, and an angle [theta] between the in-plane direction in which the displacement of the movable part is maximized and a < 100 > orientation of the piezoelectric film is within + / -11.5 DEG.

Provided are: a vibration portion having a base portion having a front end and a rear end facing the front end, and a plurality of vibration arms having fixed ends connected to the front end of the base portion and extending in a direction away from the front end, the plurality of vibration arms including at least one first vibration arm and a pair of second vibration arms on both sides of a first vibration arm group including the at least one first vibration arm in a direction crossing a long side direction; a holding portion provided at least partially around the vibration portion; and a holding arm having one end connected to the base portion and the other end connected to the holding portion, the plurality of vibration portions each having a piezoelectric film, and a lower electrode and an upper electrode facing each other with the piezoelectric film interposed therebetween, and a connection wiring connecting the upper electrodes of the pair of second vibration arms to each other is provided in a region of at least one of the base portion and the holding arm.

The invention discloses a piezoelectric film with bionic textures and a preparation method and application thereof, the piezoelectric film is formed by directionally stacking and depositing fibers with core-shell structures, the piezoelectric film has a gully-bulge alternating bionic morphology imitating human skin surface textures, and the aperture of the piezoelectric film is gradually increased from an attachment surface in the thickness direction; the fiber having the core-shell structure comprises: a core layer having a porous structure and containing modified molybdenum disulfide and polyester; the shell layer wraps the core layer, and the shell layer contains collagen; the piezoelectric film comprises a sensing unit area and a flexible connection area, the collagen crosslinking degree of the sensing unit area is larger than 75%, and the collagen crosslinking degree of the flexible connection area is 40%-55%. Under the synergistic effect of materials and structures, the piezoelectric film not only has a high piezoelectric constant, but also shows excellent mechanical properties, air permeability and moisture penetrability, and has wide application prospects in the fields of electronic skin, health monitoring and the like.

To provide a piezoelectric laminate having a piezoelectric film improved in adhesion to an upper electrode film.SOLUTION: A piezoelectric device comprising: a substrate; a piezoelectric film on the substrate; an upper adhesive layer on the piezoelectric film; and a lower adhesive layer on the upper adhesive layer, wherein the piezoelectric film is composed of a perovskite compound expressed by a general formula ABO3, where an A site includes K and Na, and a B site includes Nb, when the piezoelectric film is divided into a surface layer region extending from an upper surface of the piezoelectric film to a predetermined depth toward the substrate and a bulk region that is a region other than the surface layer region, a total atomic concentration of K and Na in the surface layer region is lower than a total atomic concentration of K and Na in the bulk region.SELECTED DRAWING: Figure 1

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

This invention provides an antibacterial and repair-promoting piezoelectric film, its preparation method, and its application, belonging to the field of piezoelectric material technology. The method involves in-situ self-assembly of Fe-MOF on the surface of BTO, followed by further loading with DHA to synthesize an electrically controlled drug-release, antibacterial, and repair-promoting nanocomposite, BTO / Fe-MOF / DHA. BTO / Fe-MOF / DHA is then added to the surface of semi-cured PDMS to form an antibacterial and repair-promoting piezoelectric film, PDMS-BTO / Fe-MOF / DHA. When the PDMS-BTO / Fe-MOF / DHA piezoelectric film is subjected to ultrasonic stimulation, BTO converts mechanical energy into electrical energy, releasing Fe from the Fe-MOF... 3+ Reduced to Fe 2+ Fe-MOF degrades and releases DHA, and ultimately, Fe... 2+ Reacting with synchronously released DHA, it produces a large amount of toxic ROS, which damages proteins and nucleic acids, inducing bacterial death. The antibacterial and repair-promoting piezoelectric membrane of the present invention generates a piezoelectric potential during mechanical deformation caused by animal movement and induces EF at the wound site to promote wound healing. This antibacterial and repair-promoting piezoelectric membrane shows great potential in the future treatment of bacterial infected wounds.

An acoustic-wave device includes a first electrode located over a substrate. A piezoelectric film is located over the first electrode and at least partially overlaps the first electrode. A second electrode is located over the piezoelectric film and at least partially overlaps the first electrode and the piezoelectric film. A temperature sensor is located in a same layer level as the first or second electrode. A heater may also be located in a same layer level as the first electrode. A closed-loop system may operate using the temperature sensor and the heater to maintain an operating temperature that provides highly stable operation.

The present invention provides a piezoelectric film having scandium aluminum nitride, carbon, and oxygen, the oxygen concentration being 0.01 at% or more and 0.35 at% or less. The invention also provides an MEMS sensor provided with the piezoelectric film.

A piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film comprising an alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0<x<1), wherein an average light transmittance through the piezoelectric film in a wavelength region of visible light and near-infrared ray is 65% or more.

A piezoelectric microelectromechanical systems (MEMS) microphone is provided comprising a substrate including walls defining a cavity and at least one of the walls defining an anchor region, a piezoelectric film layer supported by the substrate at the anchor region such that the piezoelectric film layer is cantilevered, the piezoelectric film layer being formed to introduce differential stress between a front surface of the piezoelectric film layer oriented away from the cavity and a back surface of the piezoelectric film layer oriented towards the cavity such that the piezoelectric film layer is bent into the cavity, and an electrode disposed over the piezoelectric film layer and adjacent the anchor region. A method of manufacturing such a MEMS microphone is also provided.

Provided are a laminated piezoelectric element in which a plurality of layers of piezoelectric films are laminated, said laminated piezoelectric element being capable of obtaining high sound pressure even after long-term use, and an electro-acoustic transducer. A laminated piezoelectric element in which a plurality of piezoelectric films are laminated with an adhesive layer interposed therebetween, the adhesive layer having an adhesive region and a gap portion, the adhesive region and the gap portion being provided in one direction, a direction orthogonal to the one direction, a direction at 45 degrees to the one direction, and a direction at 135 degrees to the one direction in a plane of a main surface of the piezoelectric film, respectively, and the gap portion being provided in the one direction, the direction orthogonal to the one direction, the direction at 45 degrees to the one direction, and the direction at 135 degrees to the one direction. A cross-section in the lamination direction of the piezoelectric film of the laminated piezoelectric element is observed with a scanning electron microscope to obtain ten consecutive fields of view, and the ratio d2 / d1 of the average value d1 of the thickness of the piezoelectric film observed in each field of view to the average value d2 of the thickness of the adhesive layer is 0.15-1.0 inclusive. And the ratio of the total area of the gap sections observed in each field of view to the total area of the adhesive layer is 1% or more and less than 40%.

The invention belongs to the technical field of semiconductor manufacturing, and provides a POI substrate, a manufacturing process thereof and a surface acoustic wave filter.The manufacturing process comprises the steps that a piezoelectric material film layer with a first bonding face is provided, ion implantation is carried out from the first bonding face, then gluing, exposure, developing and etching are sequentially carried out on the first bonding face, and the POI substrate is obtained. Forming an opening in the piezoelectric material film layer; and the piezoelectric material film layer with the holes is bonded with a target substrate, then heat treatment is carried out, the injection surface is subjected to interface separation, a piezoelectric layer is reserved and formed on the target substrate, and the POI substrate is obtained. By means of combining photoetching and etching, a hole is formed in one side of a bonding surface of a piezoelectric material film layer, and the hole penetrates into an injection surface of ion injection, so that the hole can provide a release window for thermal stress generated in the subsequent heat treatment process, the quality of the transferred piezoelectric film layer is effectively improved, the uniformity and the integrity are improved, and the service life of the transferred piezoelectric film layer is prolonged. And the yield and the efficiency can be improved, and the cost can be reduced.