Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

238results about How to "Large strain" patented technology

Minimally invasive bone broach

ActiveUS20050288676A1Reduce gapImproving the initial and long-term bone ingrowth/fixationJoint implantsBone drill guidesAcute angleAnatomy
A broaching system is disclosed for creating a cavity in a bone. The cavity has a cross section which has a generally triangular profile having a first side generally parallel with an axis of the bone and a second side forming an acute angle with the first side. The cavity is contiguous with a pre-existing conical cavity in the bone. The apparatus comprises as shaft and a broach. The shaft has a longitudinal axis. The broach is mounted to the shaft and has a first cutting side mounted at the acute angle relative to the longitudinal axis of the shaft. The first cutting side is formed to include teeth. The shaft and broach are configured so that when the longitudinal axis of the shaft is advanced into the bone along the axis of the bone, the teeth of the broach form the triangular cavity. A method for cutting a triangular cavity in bone is also described. The method comprises a providing a shaft step, an incising step and a cutting step. The provided shaft is configured to be movable relative to the bone to be prepared and includes a broach coupled thereto to dispose a cutting surface of the broach at an acute angle relative to the shaft. The shaft and broach have a width defined by the distance between the shaft and the outer most portion of the cutting surface. The incising step includes incising the patient adjacent the bone to be prepared to form an incision having a length approximating the width of shaft and broach. The cutting step includes cutting the cavity by driving the broach by moving the shaft relative to the bone.
Owner:DEPUY PROD INC

Direct assembly process for fabrication of ionomeric polymer devices

InactiveUS20060266642A1Superior transduction performanceLarge strain generationEngine manufactureMachines/enginesPolymer scienceActuator
Ionomeric polymer sensors, actuators, and transducers and methods for fabricating them are disclosed. One embodiment of the sensors, actuators, and transducers possess a high surface area electrode layer that is applied by hot pressing and a highly conductive surface layer. Another embodiment of these sensors, actuators, and transducers possess a high surface area electrode layer that is penetrated by electronically conductive nanowires. Methods for fabricating these sensors, actuators, and transducers are disclosed. These methods involve the formation of the high surface area layer from a liquid mixture that contains ionomeric polymer, electronically conductive particles, and possibly diluent. This mixture is formed into layers either directly on an ionomeric polymer, on a separate transfer decal, or on an electronically conductive layer. This electronically conductive layer may also include an array of nanowires. These electrode layers are then attached to an ionomeric polymer membrane by hot pressing. The ionomeric polymer membrane may be swollen with a diluent either prior to the hot pressing or after the hot pressing step. Also, the ionomeric polymer membrane may be formed by casting from a liquid mixture containing ionomeric polymer and diluent.
Owner:VIRGINIA TECH INTPROP INC

Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof

The invention relates to a soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip which comprises a silicon substrate with a square conical hole which is small at the top andbig at the bottom in the center; a silicon layer and a first oxidation layer are sequentially covered on the front surface of the silicon substrate, and a second oxidation layer is covered on the backsurface; the corresponding silicon layer and the first oxidation layer above the square hole of the front surface of the silicon substrate constitute a square vibration membrane, one pair of oppositesides of the square vibration membrane respectively etch a vertical narrow slot, and the vertical projection of each narrow slot is positioned on the inner side of the hole edge above the front surface of the silicon substrate; a lower electrode, a piezoelectric membrane and an upper electrode are sequentially deposited on the square vibration membrane; a polyimide membrane is deposited on various parts on the front surface of the silicon substrate; and the square vibration membrane which is etched with the vertical narrow slots and the polyimide membrane commonly constitute a soft support anti-sound leakage bridge type vibration membrane. The anti-sound leakage bridge type structure is used on the vibration membrane of the transducer; in order to avoid sound leakage through the narrow slots, the soft polyimide membrane is deposited on the narrow slots, which has little effect on vibration of the vibration membrane and can still keep high sensitivity.
Owner:INST OF ACOUSTICS CHINESE ACAD OF SCI

Method and device for measuring temperature and strain of isotactic ultralow-reflectivity optical fiber gratings simultaneously based on Brillouin scattering

The invention discloses a method and device for measuring the temperature and strain of isotactic ultralow-reflectivity optical fiber gratings simultaneously based on Brillouin scattering. The method includes the steps that the ultralow-reflectivity optical fiber gratings are continuously and dynamically etched through monopulse laser energy based on the drawing tower technology to obtain high-capacity optical fiber grating array sensing fibers, wherein m optical fibers and 2*m optical switches are connected to serve as a sensing probe; the reflection center wavelength lambda[i] and Brillouin frequency shift v[i] of each optical fiber grating are obtained through a high-speed CCD wavelength demodulation module and a Brillouin frequency shift heterodyne demodulation module; solving is carried out according to the Brillouin frequency shift and temperature and strain parameters of the optical fiber gratings to obtain the temperature and strain of the optical fiber gratings at each position. The method and device overcome the defects that the Brillouin sensing technology is low in precision and low in speed, simplify high-capacity ultralow-reflectivity optical fiber grating array optical fiber cabling complexity, improve high-capacity ultralow-reflectivity optical fiber grating array optical fiber cabling operability, overcome the cross sensitivity of the temperature and strain of the optical fiber gratings and improve distributed sensing detection precision.
Owner:WUHAN UNIV OF TECH +1

Transverse IV-clan element quantum well photoelectric detector and preparation method

ActiveCN105006500AImprove the effect of bandgap adjustmentEffective adjustment of absorption wavelength rangeFinal product manufactureSemiconductor devicesSpectral responseSingle crystal
The invention discloses a transverse IV-clan element quantum well photoelectric detector and mainly solves problems of high material toxicity and high cost of a conventional infrared photoelectric detector. The transverse IV-clan element quantum well photoelectric detector comprises a substrate (1), a bottom electrode (2), an absorption region (3), and a top electrode (4). A quantum well (31) uses a GeSn strain monocrystalline material with a Sn component more than or equal to 0 but less than 0.3. A barrier layer (32) uses a monocrystalline material with a Sn component more than or equal to 0 but less than 0.3 and a Ge component more than or equal to 0 but less than 1. The quantum well (31) and the barrier layer (32) are stacked transversely to form the absorption region arranged between the bottom electrode and the top electrode. According to the invention, SiGeSn monocrystalline material changes in size in an epitaxial process so as to generate transverse tensile strain in the GeSn quantum well material, thereby changing a GeSn material band gap and enlarging the spectral response range of the detector. The SiGeSn monocrystalline material can be used for producing large-scale integrated circuit.
Owner:XIDIAN UNIV

High-power overload 1KPa silicon micropressure sensor chip and manufacturing method

Provided are a high-power overload 1KPa silicon micropressure sensor chip and a manufacturing method. The high-power overload 1KPa silicon micropressure sensor chip is characterized by being of a beam-single-island double-sided double-piece micro structure. A U-shaped pressure sensitive resistor is arranged on an I beam in the front side of an upper chip body, an aluminum electrode lead and a lead welding pad are arranged at the periphery of a shallow groove, a residue membrane is connected with a central square support on the back side of the upper chip body at the portion opposite to the shallow groove to form a single hard core-shaped sensitive membrane, a peripheral sealing face and an overpressure stopping groove are arranged on the front side of a lower chip body, a pressure tap through hole is formed in the center of the front side of the lower chip body, the upper chip body and the lower chip body are sealed by rubber and are divided in a scribing mode to form the single micropressure sensor chip. An MEMS technique is utilized to manufacture the pressure sensitive resistor and the I beam structure, a KOH wet method is used for etching and manufacturing the single hard core-shaped sensitive membrane, and the KOH wet method is further used for etching the structure of the lower chip body. The high-power overload 1KPa silicon micropressure sensor chip has the advantages that due to the stress concentration effect of a beam structure, the pressure sensitive resistor can obtain the largest strain; the flexibility for acquiring a micropressure range can reach to 20mV/1KPa (1mA excitation); the linearity reaches to 0.05%FS; the overpressure stopping groove achieves 50-time overpressure resistance protection in 1KPa pressure measurement; batch production of wafers is achieved.
Owner:SHENYANG ACAD OF INSTR SCI

Forging method for efficiently healing hole flaws inside blank with large height-diameter ratio

The invention belongs to the field of forging, and specifically relates to a forging method with a small screw-down rate, which is capable of efficiently healing hole flaws inside a blank with a height-diameter ratio. The forging method adopts a numerical simulation technique to research the distribution status of strain inside the blank in the conventional forging process, thus providing a radial wide anvil compaction process which comprises the following steps of: pressing down the blank by virtue of the radial wide anvil compaction process, wherein flat plates serve as upper and lower anvil; after radial the wide anvil compaction process, returning the blank to a furnace to be re-heated and be subjected to thermal insulation; and turning over the blank by 90 degrees and drawing out the blank by the upper and lower anvil. The forging method is suitable for a free forging process for various blanks (for example continuous-casting blanks) or steel ingots with a large height-diameter ratio and the like, and particularly has good effects on the blank with the large height-diameter ratio and serious centre looseness. Forged pieces produced by the forging method can ensure the healing of the hole flaws inside the blank with the large height-diameter ratio, so that the possibility of forged piece scrapping caused by the loosened and non-forged center of the forged piece is greatly reduced; and moreover, a forged piece with a larger size can be manufactured by virtue of a small screw-down rate.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products