179results about How to "Good process compatibility" patented technology

The invention provides a control method of a high-gain image sensor, which is characterized in that a column bias current source and a column PMOS (P-channel Metal Oxide Semiconductor) amplifier tube are arranged in a column signal reading unit, the column bias current source is connected with a current output connecting line shared by a column, and a drain electrode of the column PMOS amplifier tube is connected with a current input connecting line shared by the column; the grid electrode of the column PMOS amplifier tube is connected with the common current output connecting line of the column directly or through a capacitor, and an amplified signal of a floating diffusion region of a read-out pixel unit can be obtained on the common current input connecting line of the column, so that the ultrahigh conversion gain is realized, and the dynamic range in a dark light scene is expanded; the size of a device structure in the column signal reading unit can be far larger than that of a transistor in a pixel, the process consistency is better, and the conversion gain can be adjusted more flexibly; the switching between the SHCG mode and the STD mode is realized by driving the switch module in the column signal reading unit, the impact on a power supply and the ground is smaller during operation, and the circuit stability is improved.

The invention discloses a reversible metal 4D printing method based on hydrogel reversible deformation and a metal part, and belongs to the field of metal additive manufacturing. The method comprises the following steps: firstly, constructing a three-dimensional model comprising a hydrogel driving layer and a metal blank layer; respectively preparing hydrogel light-cured ink and metal or precursor slurry thereof; printing the two layers of materials sequentially or alternately by adopting a photocuring printer to obtain a composite green body; the hydrogel layer is dehydrated and shrunk through drying, the component is driven to generate preset shape deformation, the hydrogel layer absorbs water and expands through soaking, and reversible recovery of the shape of the component is achieved; and degreasing, selective reduction and sintering heat treatment are conducted on the component, and the compact final metal component is obtained. According to the invention, the independent hydrogel layer is used as a deformation driver, the dependence on the intrinsic phase change characteristic of a metal material is avoided, the material universality is extremely high, the method can be widely applied to 4D printing of various materials including refractory metal and high-reflection metal, and reversible control of shape change is realized.

The invention provides a super-lens based on a double-coupling structure, and relates to the field of optical zooming, the super-lens comprises a substrate and a phase wave front arranged on the substrate, the phase wave front is composed of a plurality of nano-columns arranged periodically, a corresponding phase distribution value is given according to the position point of each nano-column, and the phase distribution value is calculated according to the position point of each nano-column. The phase wavefront is arranged on the substrate, the phase wavefront is arranged on the substrate, the phase wavefront is arranged on the phase wavefront, the nanometer columns are arranged on the phase wavefront to convert plane waves incident to the phase wavefront into light beams focused at a specified focal length, each nanometer column has the same rectangular cross section, a slit is formed in the long axis direction of each nanometer column, and the slits penetrate through the nanometer columns and extend to the surface of the substrate. And thus, the nano-columns form a double-coupling structure. According to the invention, the focusing efficiency of the super lens can be improved.

The invention discloses an anion exchange membrane electrode and a preparation method and application thereof, and belongs to the technical field of new energy material and catalytic electrode preparation, the method comprises the following steps: S1, preparing an anode catalyst slurry comprising a hydrophobic covalent organic framework material, an anode catalyst, an anion exchange ionomer and a solvent; s2, preparing a cathode catalyst slurry of which the components comprise a cathode catalyst, an anion exchange ionomer and a solvent; and S3, respectively spraying or coating the anode catalyst slurry and the cathode catalyst slurry on two side surfaces of an anion exchange membrane or a gas diffusion layer, and carrying out heat treatment to obtain the anion exchange membrane electrode. The method provided by the invention can solve the problems of large gas-liquid-ion three-phase mass transfer resistance, easy shielding of active catalytic sites by ionomers and unbalanced water management in the membrane electrode assembly in the existing AEMWE device.

The invention belongs to the field of material and electronic device manufacturing, and discloses a capacitive micromachined ultrasonic transducer based on 3D printing and a preparation method thereof.The CMUTs comprise an upper electrode, an upper insulating layer, a vibrating membrane, a supporting column layer, a silicon substrate and a lower electrode which are sequentially connected from top to bottom, and a cavity is formed among the vibrating membrane, the lower insulating layer and a supporting column of the supporting column layer; the method comprises the following steps: printing a pillar layer array on the front surface of a silicon substrate with a functionalized surface by utilizing a nano silicon dioxide composite material and adopting a photocuring 3D printing method; then curing and heat treatment are carried out to obtain a second device; bonding a vibrating diaphragm; printing an insulating layer on the front surface of the vibrating diaphragm; carrying out curing and heat treatment; printing an upper electrode; removing the silicon dioxide on the back surface of the silicon substrate through a wet etching process; printing a lower electrode on the back of the silicon substrate; and removing the photoresist. According to the invention, the consumption of required equipment and materials is reduced, and the production cost is reduced.

The invention discloses a high-sensitivity wide-spectrum true color quantum dot image sensor and a preparation method thereof, and belongs to the technical field of image sensors and preparation thereof. A metal lower electrode layer; a wide-spectrum quantum dot material electron transport layer, wherein the quantum dot material is a P-type quantum dot film; a wide-spectrum quantum dot material hole transport layer with a micro-nano light trapping structure, wherein the quantum dot material is an N-type quantum dot film; a transparent upper electrode layer; a support layer; and a light polarizing layer. By adopting the PbS quantum dot or HgTe quantum dot material, the wide spectral response can be realized, and the CMOS (complementary metal oxide semiconductor) process is good in compatibility; the light polarization layer is excellent in light splitting effect and high in light utilization rate; meanwhile, the pixels are composed of red, green, blue and infrared sub-pixels, the color information of the substance is obtained through the red, green and blue sub-pixels, the material information of the substance is obtained through the infrared sub-pixels, and therefore the high-sensitivity wide-spectrum true-color quantum dot image sensor is obtained.

The invention belongs to the field of polarized photoelectric detectors, and particularly discloses a method for preparing a tellurium film self-driven polarized photoelectric detector based on an ALD (atomic layer deposition) process, which comprises the following steps of: depositing a tellurium film on an insulating substrate by adopting the ALD process; preparing a source electrode and a drain electrode at two ends of the tellurium film on the insulating substrate; depositing an Al2O3 thin film on the tellurium thin film close to one side of the source electrode by adopting an ALD (atomic layer deposition) process; and carrying out annealing process treatment to obtain the tellurium film self-driven polarized photoelectric detector. Compared with the prior art, the preparation method disclosed by the invention is controllable in process, low in thermal budget, higher in process compatibility and beneficial to realizing industrial and large-batch production; the tellurium film self-driven polarized photoelectric detector prepared by the invention has excellent polarized photoelectric detection capability and does not need any external voltage; therefore, the tellurium film self-driven polarized photoelectric detector prepared by the invention is excellent in self-driven polarization sensitivity, can be applied to the field of low-power-consumption polarized photoelectric detection, and has very strong market prospects and development potential.

The invention belongs to the related technical field of micro-nano electronics, and discloses a self-adaptive homogeneous reserve pool computing system based on oxide memristors, and a storage pool layer of the self-adaptive homogeneous reserve pool computing system comprises a plurality of volatile dynamic memristors with nonlinear short-time attenuation memory characteristics; a full-connection readout layer comprises a plurality of non-volatile memristors with a multi-valued long-time-history memory characteristic; the feedback loop is used for adjusting the bias voltage applied during the state attenuation period of the dynamic memristor, and the two types of memristors adopt the same laminated structure containing a titanium oxide layer. According to the method, the problems that material systems of a storage pool layer and a read-out layer are not uniform, and the time scale of a storage pool system is single and cannot be adjusted are solved, and the time scale of the storage pool can be adaptively adjusted, so that the method can better adapt to different types of input signals, the calculation performance of the storage pool is improved, and the calculation efficiency is improved. And a dynamic information identification function is completed.

This invention relates to the field of semiconductor optoelectronic device technology, specifically to a method and application for reducing the contact resistance of high-Al-content n-AlGaN materials in device manufacturing processes. The method involves surface atom adsorption and annealing of the n-AlGaN layer under a protective gas atmosphere; the atoms are Si and N atoms. This method significantly increases the carrier concentration on the material surface, thereby contributing to excellent ohmic contact performance and reducing the material's contact resistivity. It solves the problem of difficult ohmic contact preparation for high-Al-content n-AlGaN materials, especially the difficulty in forming ohmic contacts after etching. The method is simple and reproducible, effectively avoiding the complexity and instability of existing processes such as acid / alkali corrosion or high-temperature annealing. It ensures large-scale mass production and has no adverse effects on subsequent device fabrication, exhibiting good process compatibility.

This invention discloses a netlist-level automated ESD inspection method compatible with multiple processes, belonging to the field of electronic design automation technology. The method includes acquiring the netlist file of the circuit under test, loading an ESD constraint configuration file independent of the netlist file, defining the logical types of the physical networks in the netlist file according to the ESD constraint rule set, classifying them into network types including at least power networks, ground networks, input / output networks, and internal signal networks, performing at least one ESD protection structure check on the circuit under test based on the network types and device pin connections, summarizing the results of each check, and outputting an ESD inspection report. This invention decouples ESD inspection rules from process parameters, enabling replaceable configuration files and improving process portability; it also possesses multi-power domain identification and automatic derivation capabilities for multi-level protection networks, enhancing adaptability to complex designs and inspection accuracy.

The present invention relates to the field of chip packaging technology, and specifically discloses a fan-out type packaging embedding method, comprising the following steps: step S12: embed the chip to be packaged into the groove of the fan-out substrate, and deposit a parylene dielectric layer on the upper surface of the chip, the gap between the side of the chip and the side wall of the groove; step S13: form a metal layer on the parylene dielectric layer; step S14: use the metal layer as a mask and use a dual damascene process; repeat steps S13-S14n times in sequence to form n layers of wiring in the parylene dielectric layer, wherein n≥1, and each layer of wiring is connected to pads at different positions on the chip or to different positions of the fan-out substrate. The parylene dielectric layer of the present invention has a good gap filling effect, basically no bubbles and cavities are generated inside, and the surface flatness is high, the process stability is high, the process compatibility is good, and the wiring layer stress can also be reduced.

The invention relates to the technical field of papermaking, and provides a composite fiber material and a preparation method thereof.The composite fiber material comprises a reinforcing layer and a functional layer which are arranged in a stacked mode; the reinforcing layer comprises matrix-fibril type composite fibers, and the matrix-fibril type composite fibers comprise synthetic fibrils and matrix fibers covering at least part of the surfaces of the synthetic fibrils; the functional layer comprises a skin-core type composite fiber, and the skin-core type composite fiber comprises a core layer and a functional skin layer wrapping at least part of the surface of the core layer. According to the invention, the interface bonding and load transmission efficiency of synthetic fibrils and a cellulose network is improved on the enhancement layer, and a high-strength bearing skeleton is constructed; the functional layer limits functional components on the surfaces of the fibers to form a stable functional skin layer, so that the functional components are prevented from forming a weak boundary layer among the fibers and weakening fiber bonding; the two layers cooperate to realize that the paper-based material keeps high strength and reduces the interlayer stripping risk while obtaining the target surface function.

The invention discloses a piezoelectric MEMS loudspeaker based on a folding ring between movable and fixed parts and application thereof, and belongs to the technical field of loudspeakers, the piezoelectric MEMS loudspeaker comprises a piezoelectric actuating assembly, a fixed assembly and a folding ring; the piezoelectric actuating assembly comprises a piezoelectric actuating composite layer, the piezoelectric actuating composite layer at least comprises a piezoelectric material layer, and the piezoelectric actuating composite layer generates mechanical displacement by applying voltage to drive the piezoelectric actuating assembly to vibrate so as to generate sound pressure; the fixing component can be a single structural component or a component with a plurality of structural components; the fixing assembly can be used for fixedly supporting the fixed supporting part of the piezoelectric actuating assembly, so that the non-fixed supporting part of the piezoelectric actuating assembly can freely move or vibrate; according to the invention, through the innovative design based on the folding ring between the moving part and the fixed part, the low-frequency vibration displacement of the vibrating diaphragm is remarkably improved, the problem that the low-frequency sound pressure of a traditional piezoelectric MEMS loudspeaker is insufficient is effectively solved, and the vibrating diaphragm can push air with a larger volume in a low-frequency band, so that a fuller low-frequency sound effect is obtained.

The application belongs to the technical field of lithium batteries, and discloses a gel electrolyte taking a functionalized two-dimensional MXene material as a dispersant as well as a preparation method and application of the gel electrolyte. The gel electrolyte comprises a functionalized MXene material and a basic electrolyte; the functionalized MXene material is obtained by the following method: 1) treating a MAX phase material with a solution containing HCl and LiF, intercalating, peeling off, and then reacting with a diazonium salt solution to obtain a sulfonic acid functionalized MXene material. The application further discloses a preparation method of the gel electrolyte. The application reconstructs a lithium ion solvation structure, reduces a desolvation energy barrier, homogenizes a bulk phase electric field and ion flow, cooperatively induces formation of a stable SEI interface rich in inorganic species, significantly inhibits lithium dendrite growth, and improves interface kinetic stability. The method is simple and low in cost. The electrolyte is used in a lithium metal battery and exhibits excellent cycle performance.

The invention relates to an SOI semiconductor structure integrated with a longitudinal device and a manufacturing method thereof, and the method comprises the steps: obtaining a wafer which comprises a substrate, a buried dielectric layer on the substrate, a first conductive type region on the buried dielectric layer, and a first electrode doping region formed at the bottom of the first conductive type region and on the buried dielectric layer; forming an isolation structure on the buried dielectric layer, wherein the isolation structure divides the first conductive type region into a longitudinal device region and a first device region; forming a CMOS device main body in the first device region through a CMOS process, and forming a longitudinal device main body in the longitudinal device region; forming a leading-out groove of which the bottom reaches the first electrode doping region in the longitudinal device region; and filling the lead-out groove with a conductive material to form a conductive structure for leading out the first electrode doped region to the front surface of the device. The first electrode doped region of the longitudinal device is led out from the front surface of the device by utilizing the longitudinal conductive structure, so that the longitudinal device can be integrated in a process platform by adopting a process compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor).

The present invention discloses an optimized integration method for high stress edge effect of analog BiCMOS process and a high linearity dual polycrystalline capacitor, the steps of which include: 1) depositing a polycrystalline film layer of a polycrystalline capacitor lower plate of P1 angstrom above a field oxide layer on the surface of an N-type well, and completing N-type photolithography implantation doping; 2) depositing a first dielectric layer of a dual polycrystalline capacitor of d1 angstrom, and completing the production of a protective film layer at the edge of the lower electrode of the dual polycrystalline capacitor by an exposure and etching process; 3) depositing a polycrystalline capacitor dielectric composite film layer of d2 angstroms, and completing the production of a capacitor dielectric layer structure by an exposure and etching process; the high linearity dual polycrystalline capacitor includes a substrate, an N-type buried layer, a P-type buried layer, an epitaxial layer, an N-type well, a self-aligned P-type well, etc. The present invention significantly improves the edge effect of the dual polycrystalline capacitor by integrating a high stress edge effect optimization technical solution of a high linearity dual polycrystalline capacitor in an analog integrated circuit.

The invention provides a composite material, a preparation method thereof and conductive slurry, and belongs to the technical field of conductive materials. The preparation method comprises the steps that a base material is pretreated, an activated base material is obtained, and the base material comprises copper powder or nickel powder; and an atomic layer deposition technology is adopted, a coating layer is deposited on the surface of the activated base material, the composite material is obtained, and the coating layer comprises a silver layer. The composite material prepared by the invention has the characteristics of uniform and compact coating, controllable thickness, strong interface bonding force, strong oxidation resistance, stable performance and the like, and the performance of the conductive slurry can be remarkably improved.

The invention discloses corrosion aluminum powder and a preparation method and application thereof, and the preparation method comprises the following steps: S1, carrying out plasma passivation treatment on aluminum powder to obtain surface modified aluminum powder with an amorphous aluminum oxide layer; and S2, carrying out surface micro-corrosion on the surface modified aluminum powder, and then drying and grading to obtain the corroded aluminum powder. The method comprises the following steps: forming an amorphous aluminum oxide layer on the surface of aluminum powder; and then micro-corrosion is carried out on the amorphous aluminum oxide layer, a rich pore structure is formed on the amorphous aluminum oxide layer, and after corrosion is completed, the amorphous aluminum oxide layer can be automatically formed on the corrosion surface again. The surface of the obtained corrosion aluminum powder is completely wrapped by the amorphous aluminum oxide layer, so that the leakage current can be greatly reduced, and the electrochemical stability of the anode foil is greatly improved; the porous carbon has certain roughness and rich pore structures, and the specific surface area and the specific volume are greatly increased; the micro-corrosion has no negative influence on the mechanical strength of the aluminum powder, and ensures that no micro-crack appears on the surface of the anode foil.

The invention discloses a slice laser based on a topological structure dodging layer. The slice laser comprises a pumping system, a pumping light injection module and a composite dodging waveguide structure, pumping light generated by the pumping system enters the composite dodging waveguide structure through the pumping light injection module; the front end face of the composite dodging waveguide structure is plated with a pumping light wavelength high-reflective film and a laser wavelength antireflection film, and the rear end face of the composite dodging waveguide structure is plated with a pumping source wavelength and laser wavelength high-reflective film; the composite dodging waveguide structure comprises a slice gain medium, a topological structure dodging layer and a middle refractive index layer which are sequentially arranged from the front end face to the rear end face. The topological structure dodging layer is composed of a low-refractive-index material layer and a high-refractive-index material topological graph arranged on the low-refractive-index material layer; and the pump light injection module is fixed above the high refractive index material of the middle refractive index layer or the topological structure dodging layer. Pumping uniformity is improved fundamentally, high-order mode suppression and efficient fundamental mode extraction are facilitated, and output power and light beam quality are improved at the same time.

The invention provides a plane grating splicing structure and a preparation method thereof, the plane grating splicing structure comprises at least two plane grating modules with a preset structure, and all the plane grating modules are spliced together to form a plane grating with the preset structure; moreover, each plane grating module at least comprises two small gratings, and the small gratings belonging to the same group are spliced together to form the plane grating module with a preset structure. According to the plane grating splicing structure and the grating manufacturing method, the problems that a plane grating manufactured through an existing plane grating manufacturing method is large in manufacturing difficulty, high in equipment cost and prone to damage can be solved.

The utility model relates to the technical field of carbon brush production, in particular to a carbon brush oiling tool which is provided with a horizontal moving unit, a vertical moving unit is arranged on the horizontal moving unit, an oiling unit is arranged on the vertical moving unit, the oiling unit comprises an oil pipe, an oil injection valve and an oiling brush, and an oiling position adjusting unit is arranged on the vertical moving unit. Through linkage control of the horizontal moving unit and the vertical moving unit, it is ensured that the oiling brush can be accurately positioned to the starting point of the carbon brush milling arc face, and continuous and uniform covering of an oil film is achieved through the constant-speed pulling-up action from bottom to top. The oil injection valve and the lifting speed are synchronously adjusted, the oil quantity and thickness can be accurately controlled, and the problem that an oil film is too thick or too thin in traditional manual operation is solved; the oiling position adjusting unit is integrated on the vertical moving unit, so that transverse deviation is supported, carbon brushes of different sizes and radians are adapted, missing coating or uneven coating caused by workpiece tolerance is avoided, and the process compatibility is remarkably improved.

The application provides a coiled tube heat exchanger using spherical clamping strips to fix tube bundles, and belongs to the technical field of heat exchange equipment, and comprises a central cylinder and a plurality of clamping strips with spherical protrusions arranged on the outer wall of the central cylinder. The upper surface of the clamping strip is provided with a spherical protrusion structure, and adjacent spherical protrusions constitute a heat exchange tube positioning element. The spacing between the spherical structures is optimized to match the arrangement of the tube bundles, and the outer surface of the central cylinder is wound with heat exchange tubes. The clamping strip with the spherical protrusion adopts a reverse stamping process in the manufacturing process, so that the processing surface is located on the non-contact side of the heat exchange tube, effectively avoiding direct friction damage of the processing defects to the tube wall. The spherical streamline structure reduces the turbulence intensity when the shell side fluid flows around, effectively reduces the shell side pressure drop while ensuring the positioning accuracy of the heat exchange tube, and improves the heat transfer efficiency of the heat exchanger. The clamping strip with the spherical protrusion omits the independent welding area required by the traditional tube clamp, thereby reducing the material consumption of the clamping strip.

The present invention discloses a composite fiber filament winding interweaving type high-performance lithium metal negative electrode and its preparation method and application, wherein the negative electrode comprises composite fiber filaments and active materials filled in the composite fiber filaments, wherein: the composite fiber filaments are formed by winding multifunctional fiber filaments and polymer main fiber filaments, the polymer main fiber filaments serve as the main skeleton, and the multifunctional fiber filaments are wound on the polymer main fiber filaments; the multifunctional fiber filaments comprise copper fiber filaments and a bipolar protective layer selectively coated on the surface of the copper fiber filaments, the bipolar protective layer is located on the upper surface of the composite fiber filaments as the winding progresses, and the copper fiber filaments are located on the lower surface of the composite fiber filaments. The present invention forms a composite fiber filament by winding and interweaving the polymer main fiber filaments and the multifunctional fiber filaments as the "host" skeleton of lithium metal, inducing rapid and uniform deposition of lithium ions, alleviating the continuous decomposition of the electrolyte and the consumption of active lithium, achieving high coulomb efficiency while minimizing corrosion.

The application provides a deep trench field effect transistor and a preparation method thereof, which comprises the following steps: forming a P-type layer and an N-type layer in an N-type substrate; forming a gate trench and a terminal trench; forming an N-type source region by ion implantation; forming a gate oxide layer in the trench; forming a first polysilicon layer, a thick oxide layer and a second polysilicon layer in the trench; depositing a dielectric layer; forming a drain contact region, a source contact region, a gate contact region and a terminal contact region; forming a source electrode, a gate electrode and a drain electrode, wherein the source electrode is connected with the N-type source region and the terminal contact region simultaneously. The source electrode, the gate electrode and the drain electrode can be attached to a heat dissipation substrate simultaneously, the heat dissipation path is greatly optimized, and the source path inductance is reduced; the source contact region of the application is arranged in the terminal region, and the source contact region is realized by directly etching the dielectric layer and the substrate below the dielectric layer, the process controllability is high, the steps are simple, and the etching process of the source contact region has high stability.

The application relates to the technical field of semiconductor bridge electrostatic discharge protection and current protection, and discloses an electrostatic discharge and current protection circuit of a semiconductor bridge, which comprises an ESD protection circuit, a current protection circuit and an NMOS connected in parallel, the ESD protection circuit comprises a bidirectional transient suppression diode and a capacitor connected in parallel, the bidirectional transient suppression diode clamps a transient high voltage by breakdown conduction, the voltage is limited in a safe range, the capacitor reduces a voltage rising rate and suppresses overshoot by shunting and absorbing a transient current, the NMOS provides a low-resistance discharge path, and the voltage and current impact applied to the semiconductor bridge are reduced; the current protection circuit comprises a bidirectional rectifier circuit and a detection circuit; and the NMOS is connected between the detection circuits. The application can realize ESD protection and current protection of the semiconductor bridge, prevents current from damaging the structure, and guarantees the safety of the semiconductor bridge working in an electromagnetic and ESD environment.

The utility model relates to the technical field of linear cutting, in particular to a bidirectional clamping and fixing device for linear cutting. The top of the mounting plate is fixed to a rack, the clamping parts are arranged on the two sides of the mounting plate in a mirror image mode with the central axis of the mounting plate as the reference, each clamping part comprises an upper supporting rod, a middle supporting rod and a lower supporting rod, and the two ends of the upper supporting rod, the two ends of the middle supporting rod and the two ends of the lower supporting rod are movably installed on corner-shaped supporting arms through shafts. The upper ends of the supporting arms are movably installed on the upper supporting rods, the corner points of the supporting arms are movably installed on the middle supporting rods, the lower ends of the supporting arms are movably installed on the lower supporting rods, and pressing plates used for clamping are arranged on the inner sides of the lower supporting rods. An installation plate is adopted as a base body, the top of the installation plate is fixed to a rack, clamping parts are symmetrically arranged on the two sides of the central axis of the bottom of the installation plate, each clamping part is composed of an upper supporting rod, a middle supporting rod and a lower supporting rod, and the two ends of the upper supporting rod, the middle supporting rod and the lower supporting rod are movably connected with corner-shaped supporting arms through shafts to form a four-connecting-rod linkage mechanism, and bidirectional symmetrical clamping is achieved.

The application discloses a MEMS gas sensor based on a weakly coupled AlN thin film resonator and belongs to the technical field of microelectronic mechanical systems. The gas sensor comprises a glass base, the front surface of the glass base is provided with a plurality of groups of capacitor plates, an AlN thin film resonator array is suspended on the glass base through the capacitor plates, the AlN thin film resonator array is composed of at least four resonator units, and the resonator units are connected through coupling beams. The MEMS gas sensor is configured to realize synchronous quantitative measurement of a plurality of gas concentrations by detecting the change of the vibration amplitude ratio of each resonator unit. The application has the advantages of multi-parameter synchronous detection, strong anti-interference capability, high sensitivity and good stability and is suitable for gas sensing measurement in a complex environment.

The invention relates to the technical field of cosmetic preparations, and discloses a composition containing succinyl glycan and application of the composition to regulation and control of the repetition distance of a liquid crystal lamellar phase, the composition comprises a liquid crystal component and an effective amount of succinyl glycan, wherein the stratified phase repetition distance of liquid crystals in the composition can be effectively adjusted by adding the succinyl glycan, and the thermal stability of the composition is improved; small-angle X-ray scattering (SAXS) proves that the addition of the succinyl glycan enables the repetition distance of the lamellar phase of the liquid crystal to generate a measurable change of 6.2% to 19.4%; the invention provides a novel method for accurately regulating and controlling the liquid crystal structure of the cosmetic from the nanoscale, and the obtained composition has better stability, moisture retention and skin feeling in use.

The utility model belongs to the technical field of military engineering, and particularly relates to a rocket tube sleeve based on a pultrusion winding process, which comprises an outer lining layer, a first longitudinal fiber layer is arranged at the bottom of the outer lining layer; a first winding fiber layer is arranged at the bottom of the first longitudinal fiber layer; a second longitudinal fiber layer is arranged at the bottom of the first winding fiber layer; a second winding fiber layer is arranged at the bottom of the second longitudinal fiber layer; a third longitudinal fiber layer is arranged at the bottom of the second winding fiber layer; a lining layer is arranged at the bottom of the third longitudinal fiber layer; the lining layer is mainly composed of fiber cloth and continuous fiber felt and is used for improving the pressure resistance of the interior of the rocket tube sleeve and improving the surface smoothness of the interior of the rocket tube sleeve, and the first longitudinal fiber layer and the second longitudinal fiber layer are mainly used for achieving the effect of a process layer. In addition, the performance of longitudinal bending resistance, stretching resistance and the like of the rocket launcher casing pipe is greatly improved, and the outer lining layer is mainly composed of composite insulation cloth and plays a role in reducing cracking of the rocket launcher casing pipe.

This application relates to the field of BC battery back cleaning and discloses an integrated machine for precise BSG removal wet cleaning of the back of BC batteries. In this application, a flushing pump is fixedly connected to the side surface of the working frame, an adjusting shaft is set on the outer surface of the clamping frame, the adjusting shaft is movably connected to the inner groove of the working frame, a clamping block is movably connected to the inner surface of the clamping frame, a rocker arm is movably connected to the inner surface of the corresponding clamping block, and a rack is fixedly connected to the outer surface of the clamping frame. An adjusting plate is set on the outer surface of the other end of the rack, which can automatically complete adaptive clamping after the BC battery is inserted, without additional manual intervention, thus improving clamping efficiency. The cooperative design of the rack and adjusting plate allows for flexible adjustment of the clamping span according to the size and specifications of the BC battery, adapting to the production needs of BC batteries of different sizes and enhancing the versatility of the equipment. The integrated layout of the upper support shell, tilt adjustment mechanism, precision cleaning mechanism, and flushing pump reduces material transfer losses between processes and lowers the risk of scratches on the surface of the BC battery.