119results about How to "Good process compatibility" patented technology

The invention discloses a reversible metal 4D printing method based on hydrogel reversible deformation and a metal part, and belongs to the field of metal additive manufacturing. The method comprises the following steps: firstly, constructing a three-dimensional model comprising a hydrogel driving layer and a metal blank layer; respectively preparing hydrogel light-cured ink and metal or precursor slurry thereof; printing the two layers of materials sequentially or alternately by adopting a photocuring printer to obtain a composite green body; the hydrogel layer is dehydrated and shrunk through drying, the component is driven to generate preset shape deformation, the hydrogel layer absorbs water and expands through soaking, and reversible recovery of the shape of the component is achieved; and degreasing, selective reduction and sintering heat treatment are conducted on the component, and the compact final metal component is obtained. According to the invention, the independent hydrogel layer is used as a deformation driver, the dependence on the intrinsic phase change characteristic of a metal material is avoided, the material universality is extremely high, the method can be widely applied to 4D printing of various materials including refractory metal and high-reflection metal, and reversible control of shape change is realized.

The invention discloses an anion exchange membrane electrode and a preparation method and application thereof, and belongs to the technical field of new energy material and catalytic electrode preparation, the method comprises the following steps: S1, preparing an anode catalyst slurry comprising a hydrophobic covalent organic framework material, an anode catalyst, an anion exchange ionomer and a solvent; s2, preparing a cathode catalyst slurry of which the components comprise a cathode catalyst, an anion exchange ionomer and a solvent; and S3, respectively spraying or coating the anode catalyst slurry and the cathode catalyst slurry on two side surfaces of an anion exchange membrane or a gas diffusion layer, and carrying out heat treatment to obtain the anion exchange membrane electrode. The method provided by the invention can solve the problems of large gas-liquid-ion three-phase mass transfer resistance, easy shielding of active catalytic sites by ionomers and unbalanced water management in the membrane electrode assembly in the existing AEMWE device.

The invention belongs to the related technical field of micro-nano electronics, and discloses a self-adaptive homogeneous reserve pool computing system based on oxide memristors, and a storage pool layer of the self-adaptive homogeneous reserve pool computing system comprises a plurality of volatile dynamic memristors with nonlinear short-time attenuation memory characteristics; a full-connection readout layer comprises a plurality of non-volatile memristors with a multi-valued long-time-history memory characteristic; the feedback loop is used for adjusting the bias voltage applied during the state attenuation period of the dynamic memristor, and the two types of memristors adopt the same laminated structure containing a titanium oxide layer. According to the method, the problems that material systems of a storage pool layer and a read-out layer are not uniform, and the time scale of a storage pool system is single and cannot be adjusted are solved, and the time scale of the storage pool can be adaptively adjusted, so that the method can better adapt to different types of input signals, the calculation performance of the storage pool is improved, and the calculation efficiency is improved. And a dynamic information identification function is completed.

This invention relates to the field of semiconductor optoelectronic device technology, specifically to a method and application for reducing the contact resistance of high-Al-content n-AlGaN materials in device manufacturing processes. The method involves surface atom adsorption and annealing of the n-AlGaN layer under a protective gas atmosphere; the atoms are Si and N atoms. This method significantly increases the carrier concentration on the material surface, thereby contributing to excellent ohmic contact performance and reducing the material's contact resistivity. It solves the problem of difficult ohmic contact preparation for high-Al-content n-AlGaN materials, especially the difficulty in forming ohmic contacts after etching. The method is simple and reproducible, effectively avoiding the complexity and instability of existing processes such as acid / alkali corrosion or high-temperature annealing. It ensures large-scale mass production and has no adverse effects on subsequent device fabrication, exhibiting good process compatibility.

This invention discloses a netlist-level automated ESD inspection method compatible with multiple processes, belonging to the field of electronic design automation technology. The method includes acquiring the netlist file of the circuit under test, loading an ESD constraint configuration file independent of the netlist file, defining the logical types of the physical networks in the netlist file according to the ESD constraint rule set, classifying them into network types including at least power networks, ground networks, input / output networks, and internal signal networks, performing at least one ESD protection structure check on the circuit under test based on the network types and device pin connections, summarizing the results of each check, and outputting an ESD inspection report. This invention decouples ESD inspection rules from process parameters, enabling replaceable configuration files and improving process portability; it also possesses multi-power domain identification and automatic derivation capabilities for multi-level protection networks, enhancing adaptability to complex designs and inspection accuracy.

The invention relates to the technical field of papermaking, and provides a composite fiber material and a preparation method thereof.The composite fiber material comprises a reinforcing layer and a functional layer which are arranged in a stacked mode; the reinforcing layer comprises matrix-fibril type composite fibers, and the matrix-fibril type composite fibers comprise synthetic fibrils and matrix fibers covering at least part of the surfaces of the synthetic fibrils; the functional layer comprises a skin-core type composite fiber, and the skin-core type composite fiber comprises a core layer and a functional skin layer wrapping at least part of the surface of the core layer. According to the invention, the interface bonding and load transmission efficiency of synthetic fibrils and a cellulose network is improved on the enhancement layer, and a high-strength bearing skeleton is constructed; the functional layer limits functional components on the surfaces of the fibers to form a stable functional skin layer, so that the functional components are prevented from forming a weak boundary layer among the fibers and weakening fiber bonding; the two layers cooperate to realize that the paper-based material keeps high strength and reduces the interlayer stripping risk while obtaining the target surface function.

The invention discloses a piezoelectric MEMS loudspeaker based on a folding ring between movable and fixed parts and application thereof, and belongs to the technical field of loudspeakers, the piezoelectric MEMS loudspeaker comprises a piezoelectric actuating assembly, a fixed assembly and a folding ring; the piezoelectric actuating assembly comprises a piezoelectric actuating composite layer, the piezoelectric actuating composite layer at least comprises a piezoelectric material layer, and the piezoelectric actuating composite layer generates mechanical displacement by applying voltage to drive the piezoelectric actuating assembly to vibrate so as to generate sound pressure; the fixing component can be a single structural component or a component with a plurality of structural components; the fixing assembly can be used for fixedly supporting the fixed supporting part of the piezoelectric actuating assembly, so that the non-fixed supporting part of the piezoelectric actuating assembly can freely move or vibrate; according to the invention, through the innovative design based on the folding ring between the moving part and the fixed part, the low-frequency vibration displacement of the vibrating diaphragm is remarkably improved, the problem that the low-frequency sound pressure of a traditional piezoelectric MEMS loudspeaker is insufficient is effectively solved, and the vibrating diaphragm can push air with a larger volume in a low-frequency band, so that a fuller low-frequency sound effect is obtained.

The application belongs to the technical field of lithium batteries, and discloses a gel electrolyte taking a functionalized two-dimensional MXene material as a dispersant as well as a preparation method and application of the gel electrolyte. The gel electrolyte comprises a functionalized MXene material and a basic electrolyte; the functionalized MXene material is obtained by the following method: 1) treating a MAX phase material with a solution containing HCl and LiF, intercalating, peeling off, and then reacting with a diazonium salt solution to obtain a sulfonic acid functionalized MXene material. The application further discloses a preparation method of the gel electrolyte. The application reconstructs a lithium ion solvation structure, reduces a desolvation energy barrier, homogenizes a bulk phase electric field and ion flow, cooperatively induces formation of a stable SEI interface rich in inorganic species, significantly inhibits lithium dendrite growth, and improves interface kinetic stability. The method is simple and low in cost. The electrolyte is used in a lithium metal battery and exhibits excellent cycle performance.

The invention provides a composite material, a preparation method thereof and conductive slurry, and belongs to the technical field of conductive materials. The preparation method comprises the steps that a base material is pretreated, an activated base material is obtained, and the base material comprises copper powder or nickel powder; and an atomic layer deposition technology is adopted, a coating layer is deposited on the surface of the activated base material, the composite material is obtained, and the coating layer comprises a silver layer. The composite material prepared by the invention has the characteristics of uniform and compact coating, controllable thickness, strong interface bonding force, strong oxidation resistance, stable performance and the like, and the performance of the conductive slurry can be remarkably improved.

The invention discloses corrosion aluminum powder and a preparation method and application thereof, and the preparation method comprises the following steps: S1, carrying out plasma passivation treatment on aluminum powder to obtain surface modified aluminum powder with an amorphous aluminum oxide layer; and S2, carrying out surface micro-corrosion on the surface modified aluminum powder, and then drying and grading to obtain the corroded aluminum powder. The method comprises the following steps: forming an amorphous aluminum oxide layer on the surface of aluminum powder; and then micro-corrosion is carried out on the amorphous aluminum oxide layer, a rich pore structure is formed on the amorphous aluminum oxide layer, and after corrosion is completed, the amorphous aluminum oxide layer can be automatically formed on the corrosion surface again. The surface of the obtained corrosion aluminum powder is completely wrapped by the amorphous aluminum oxide layer, so that the leakage current can be greatly reduced, and the electrochemical stability of the anode foil is greatly improved; the porous carbon has certain roughness and rich pore structures, and the specific surface area and the specific volume are greatly increased; the micro-corrosion has no negative influence on the mechanical strength of the aluminum powder, and ensures that no micro-crack appears on the surface of the anode foil.

The invention discloses a slice laser based on a topological structure dodging layer. The slice laser comprises a pumping system, a pumping light injection module and a composite dodging waveguide structure, pumping light generated by the pumping system enters the composite dodging waveguide structure through the pumping light injection module; the front end face of the composite dodging waveguide structure is plated with a pumping light wavelength high-reflective film and a laser wavelength antireflection film, and the rear end face of the composite dodging waveguide structure is plated with a pumping source wavelength and laser wavelength high-reflective film; the composite dodging waveguide structure comprises a slice gain medium, a topological structure dodging layer and a middle refractive index layer which are sequentially arranged from the front end face to the rear end face. The topological structure dodging layer is composed of a low-refractive-index material layer and a high-refractive-index material topological graph arranged on the low-refractive-index material layer; and the pump light injection module is fixed above the high refractive index material of the middle refractive index layer or the topological structure dodging layer. Pumping uniformity is improved fundamentally, high-order mode suppression and efficient fundamental mode extraction are facilitated, and output power and light beam quality are improved at the same time.

The invention provides a plane grating splicing structure and a preparation method thereof, the plane grating splicing structure comprises at least two plane grating modules with a preset structure, and all the plane grating modules are spliced together to form a plane grating with the preset structure; moreover, each plane grating module at least comprises two small gratings, and the small gratings belonging to the same group are spliced together to form the plane grating module with a preset structure. According to the plane grating splicing structure and the grating manufacturing method, the problems that a plane grating manufactured through an existing plane grating manufacturing method is large in manufacturing difficulty, high in equipment cost and prone to damage can be solved.

The utility model relates to the technical field of carbon brush production, in particular to a carbon brush oiling tool which is provided with a horizontal moving unit, a vertical moving unit is arranged on the horizontal moving unit, an oiling unit is arranged on the vertical moving unit, the oiling unit comprises an oil pipe, an oil injection valve and an oiling brush, and an oiling position adjusting unit is arranged on the vertical moving unit. Through linkage control of the horizontal moving unit and the vertical moving unit, it is ensured that the oiling brush can be accurately positioned to the starting point of the carbon brush milling arc face, and continuous and uniform covering of an oil film is achieved through the constant-speed pulling-up action from bottom to top. The oil injection valve and the lifting speed are synchronously adjusted, the oil quantity and thickness can be accurately controlled, and the problem that an oil film is too thick or too thin in traditional manual operation is solved; the oiling position adjusting unit is integrated on the vertical moving unit, so that transverse deviation is supported, carbon brushes of different sizes and radians are adapted, missing coating or uneven coating caused by workpiece tolerance is avoided, and the process compatibility is remarkably improved.

The application provides a coiled tube heat exchanger using spherical clamping strips to fix tube bundles, and belongs to the technical field of heat exchange equipment, and comprises a central cylinder and a plurality of clamping strips with spherical protrusions arranged on the outer wall of the central cylinder. The upper surface of the clamping strip is provided with a spherical protrusion structure, and adjacent spherical protrusions constitute a heat exchange tube positioning element. The spacing between the spherical structures is optimized to match the arrangement of the tube bundles, and the outer surface of the central cylinder is wound with heat exchange tubes. The clamping strip with the spherical protrusion adopts a reverse stamping process in the manufacturing process, so that the processing surface is located on the non-contact side of the heat exchange tube, effectively avoiding direct friction damage of the processing defects to the tube wall. The spherical streamline structure reduces the turbulence intensity when the shell side fluid flows around, effectively reduces the shell side pressure drop while ensuring the positioning accuracy of the heat exchange tube, and improves the heat transfer efficiency of the heat exchanger. The clamping strip with the spherical protrusion omits the independent welding area required by the traditional tube clamp, thereby reducing the material consumption of the clamping strip.

The application provides a deep trench field effect transistor and a preparation method thereof, which comprises the following steps: forming a P-type layer and an N-type layer in an N-type substrate; forming a gate trench and a terminal trench; forming an N-type source region by ion implantation; forming a gate oxide layer in the trench; forming a first polysilicon layer, a thick oxide layer and a second polysilicon layer in the trench; depositing a dielectric layer; forming a drain contact region, a source contact region, a gate contact region and a terminal contact region; forming a source electrode, a gate electrode and a drain electrode, wherein the source electrode is connected with the N-type source region and the terminal contact region simultaneously. The source electrode, the gate electrode and the drain electrode can be attached to a heat dissipation substrate simultaneously, the heat dissipation path is greatly optimized, and the source path inductance is reduced; the source contact region of the application is arranged in the terminal region, and the source contact region is realized by directly etching the dielectric layer and the substrate below the dielectric layer, the process controllability is high, the steps are simple, and the etching process of the source contact region has high stability.

The application relates to the technical field of semiconductor bridge electrostatic discharge protection and current protection, and discloses an electrostatic discharge and current protection circuit of a semiconductor bridge, which comprises an ESD protection circuit, a current protection circuit and an NMOS connected in parallel, the ESD protection circuit comprises a bidirectional transient suppression diode and a capacitor connected in parallel, the bidirectional transient suppression diode clamps a transient high voltage by breakdown conduction, the voltage is limited in a safe range, the capacitor reduces a voltage rising rate and suppresses overshoot by shunting and absorbing a transient current, the NMOS provides a low-resistance discharge path, and the voltage and current impact applied to the semiconductor bridge are reduced; the current protection circuit comprises a bidirectional rectifier circuit and a detection circuit; and the NMOS is connected between the detection circuits. The application can realize ESD protection and current protection of the semiconductor bridge, prevents current from damaging the structure, and guarantees the safety of the semiconductor bridge working in an electromagnetic and ESD environment.

The utility model relates to the technical field of linear cutting, in particular to a bidirectional clamping and fixing device for linear cutting. The top of the mounting plate is fixed to a rack, the clamping parts are arranged on the two sides of the mounting plate in a mirror image mode with the central axis of the mounting plate as the reference, each clamping part comprises an upper supporting rod, a middle supporting rod and a lower supporting rod, and the two ends of the upper supporting rod, the two ends of the middle supporting rod and the two ends of the lower supporting rod are movably installed on corner-shaped supporting arms through shafts. The upper ends of the supporting arms are movably installed on the upper supporting rods, the corner points of the supporting arms are movably installed on the middle supporting rods, the lower ends of the supporting arms are movably installed on the lower supporting rods, and pressing plates used for clamping are arranged on the inner sides of the lower supporting rods. An installation plate is adopted as a base body, the top of the installation plate is fixed to a rack, clamping parts are symmetrically arranged on the two sides of the central axis of the bottom of the installation plate, each clamping part is composed of an upper supporting rod, a middle supporting rod and a lower supporting rod, and the two ends of the upper supporting rod, the middle supporting rod and the lower supporting rod are movably connected with corner-shaped supporting arms through shafts to form a four-connecting-rod linkage mechanism, and bidirectional symmetrical clamping is achieved.

The application discloses a MEMS gas sensor based on a weakly coupled AlN thin film resonator and belongs to the technical field of microelectronic mechanical systems. The gas sensor comprises a glass base, the front surface of the glass base is provided with a plurality of groups of capacitor plates, an AlN thin film resonator array is suspended on the glass base through the capacitor plates, the AlN thin film resonator array is composed of at least four resonator units, and the resonator units are connected through coupling beams. The MEMS gas sensor is configured to realize synchronous quantitative measurement of a plurality of gas concentrations by detecting the change of the vibration amplitude ratio of each resonator unit. The application has the advantages of multi-parameter synchronous detection, strong anti-interference capability, high sensitivity and good stability and is suitable for gas sensing measurement in a complex environment.

The invention relates to the technical field of cosmetic preparations, and discloses a composition containing succinyl glycan and application of the composition to regulation and control of the repetition distance of a liquid crystal lamellar phase, the composition comprises a liquid crystal component and an effective amount of succinyl glycan, wherein the stratified phase repetition distance of liquid crystals in the composition can be effectively adjusted by adding the succinyl glycan, and the thermal stability of the composition is improved; small-angle X-ray scattering (SAXS) proves that the addition of the succinyl glycan enables the repetition distance of the lamellar phase of the liquid crystal to generate a measurable change of 6.2% to 19.4%; the invention provides a novel method for accurately regulating and controlling the liquid crystal structure of the cosmetic from the nanoscale, and the obtained composition has better stability, moisture retention and skin feeling in use.

This application relates to the field of BC battery back cleaning and discloses an integrated machine for precise BSG removal wet cleaning of the back of BC batteries. In this application, a flushing pump is fixedly connected to the side surface of the working frame, an adjusting shaft is set on the outer surface of the clamping frame, the adjusting shaft is movably connected to the inner groove of the working frame, a clamping block is movably connected to the inner surface of the clamping frame, a rocker arm is movably connected to the inner surface of the corresponding clamping block, and a rack is fixedly connected to the outer surface of the clamping frame. An adjusting plate is set on the outer surface of the other end of the rack, which can automatically complete adaptive clamping after the BC battery is inserted, without additional manual intervention, thus improving clamping efficiency. The cooperative design of the rack and adjusting plate allows for flexible adjustment of the clamping span according to the size and specifications of the BC battery, adapting to the production needs of BC batteries of different sizes and enhancing the versatility of the equipment. The integrated layout of the upper support shell, tilt adjustment mechanism, precision cleaning mechanism, and flushing pump reduces material transfer losses between processes and lowers the risk of scratches on the surface of the BC battery.

The invention discloses a passivation material, the structural formula of the passivation material is shown in the specification, X is independently selected from F, Cl, Br or I, and Y is independently selected from-PO3H2,-SO4H,-COOH,-OH or-SH. The passivation material and uncoordinated Pb < + > on the surface of the perovskite can form a powerful double-site coordination effect, the interface defect state density is remarkably reduced, and non-radiative recombination is inhibited. Meanwhile, the interface energy band structure is effectively regulated and controlled, the Fermi level is moved upwards, the surface n-type characteristic is enhanced, and therefore energy level alignment is optimized, the electron extraction potential barrier is reduced, and the charge transmission efficiency is improved.

The present invention discloses a lithium niobate thin film waveguide with a triangular end face, a preparation method and a pattern spot converter, comprising a substrate, a silicon dioxide layer arranged on the substrate, a lithium niobate thin film waveguide part arranged on the silicon dioxide layer, and the end face of the lithium niobate thin film waveguide part is triangular. A method of multiple etchings and controlling the etching rate is proposed to realize the preparation of a narrow linewidth pattern spot converter, and the etching includes three processes, namely LN ridge etching, Cr film low aspect ratio etching, and LN triangular ridge etching. It has been verified by experiments that this method can realize the preparation of a thin film lithium niobate waveguide with a narrow linewidth triangular end face at the pattern spot converter part; it can realize the matching of the waveguide and the optical fiber pattern spot, thereby reducing the insertion loss of the waveguide and optical fiber coupling, and solving the mode adaptation problem of the lithium niobate thin film optical waveguide and the optical fiber; the use of ultraviolet lithography technology makes it more efficient and less costly.

This invention discloses an industrial production method for cement clinker that co-processes heavy metal-containing waste, comprising: raw meal preparation: raw meal is prepared according to the following proportions by weight: 84-87 wt% calcareous raw materials, 6.0-7.2 wt% clayey raw materials, 4.8-5.8 wt% corrective raw materials, and 2.0-4.5 wt% heavy metal-containing waste; addition of composite synergist: a heavy metal adsorption-mineralization composite synergist is added to the raw meal; pre-decomposition: the homogenized raw meal is preheated by a multi-stage cyclone preheater and then enters a decomposition furnace for carbonate decomposition; clinker calcination: the decomposed raw meal enters a rotary kiln and is calcined at 1350-1450℃ to form clinker; and rapid cooling of clinker: the calcined clinker is rapidly cooled to room temperature by a grate cooler to obtain finished cement clinker. This invention can achieve a total solidification rate of heavy metals in clinker of 93%, and increase the retention of Pb, Cd and Zn by 13.9 times, 59.1% and 11.5% respectively, and increase the 28-day compressive strength to 61.8 MPa.

The present application relates to the technical field of metal precision forming, and particularly relates to a copper micro-channel liquid cooling radiator and a liquid forming manufacturing method thereof, which comprises the following steps: S1, a soluble ceramic core with a micro-channel negative structure is prepared by using a template method, and the surface of the core is pretreated to reduce the wetting angle; S2, the pretreated core and an outer mold sprayed with a release agent are assembled to form a casting cavity; S3, copper liquid subjected to flowability improvement treatment is smelted and cast in a vacuum or a protective atmosphere; S4, directional solidification of the casting is guided by using multi-section induction heating combined with online temperature control; and S5, the core is removed by chemical dissolution. Through the synergy of bidirectional wetting control, a template method soluble core and directional solidification technology, the present application realizes high-quality and low-cost batch manufacturing of a complex three-dimensional micro-channel copper radiator, and the prepared radiator has a complete micro-channel structure and high internal density, and is suitable for high-power heat dissipation scenes in the fields of high-performance computing, power electronics, new energy and the like.

The embodiment of the invention relates to the technical field of communication, and discloses an antenna unit and communication equipment. The antenna unit comprises a substrate, a grounding layer, a radiator and a coupling unit. The grounding layer is arranged on the first surface of the substrate, the radiator is arranged on the second surface of the substrate, the radiator is provided with a feed structure, and the first surface and the second surface are oppositely arranged. The coupling unit is arranged on the second surface of the substrate, the coupling unit and the radiator are arranged at an interval, and the coupling unit is coupled with the grounding layer through the dielectric layer of the substrate. The grounding layer, the radiator and the coupling unit are integrated on the substrate to form an integrated structure. Through the mode, the grounding layer, the radiator and the coupling unit are integrated on the substrate to form an integrated structure by adopting a printed circuit board process, so that the production cost can be reduced, the process compatibility can be improved, the working frequency band can be expanded, the miniaturization design can be realized, and the integrated requirements of large-scale commercial deployment and various application scenes can be met.

The application discloses a method for detecting self-interstitial atom type dislocations in heavily arsenic-doped substrates. The method is based on the fact that self-interstitial silicon atoms in heavily arsenic-doped substrates have a thermal activation threshold effect during high-temperature epitaxy. When the effective thermal treatment time of epitaxy reaches a critical aggregation time τ c , the dispersed point defect state self-interstitial atoms can be excited and aggregated into an extended dislocation state that can be detected. The method comprises the following steps: pretreating the heavily arsenic-doped substrate; performing epitaxial growth under process conditions that satisfy the thermal activation threshold, so that the latent self-interstitial atom defects are made dominant; identifying characteristic signals by using SP1 surface scattering scanning; and optionally performing microscope observation, chemical corrosion verification and substrate trace detection. The application realizes effective detection of latent self-interstitial atom type dislocations in heavily arsenic-doped substrates, provides a quantifiable process window, and has the advantages of high detection sensitivity, good reliability and easy industrial integration.

The invention provides an annealing process for improving stress uniformity of non-doped polycrystalline silicon, which comprises the following steps of: providing a wafer on which a non-doped polycrystalline silicon layer is formed; a furnace tube machine table is provided, the temperature of a process cavity of the furnace tube machine table is adjusted to a first preset temperature, and the first preset temperature is lower than the standby temperature of the furnace tube machine table; transferring the wafer into the process cavity; raising the temperature of the process cavity to a process temperature and maintaining the temperature for a first preset time; adjusting the temperature of the process cavity of the furnace tube to a second preset temperature; and the wafer is conveyed out. By reducing the cavity entering temperature of the wafer during annealing treatment, the stress uniformity of the non-doped polycrystalline silicon after annealing can be effectively improved while the stress is reduced.

The invention provides a photoresist composition based on carbon quantum dots as well as a preparation method and application thereof. The photoresist composition comprises carbon quantum dots, a photosensitizer, an anti-diffusion agent and a photoresist solvent. The particle size of the carbon quantum dot is 2-10nm, and the surface is modified by functional groups. The photosensitizer is alpha-hydroxyethyl phenyl ketone and the like, the anti-diffusion agent is n-amyl alcohol and the like, and the photoresist solvent is an organic solvent such as methylbenzene and the like. The preparation method comprises the step of preparing the carbon quantum dots. The photoresist based on the carbon quantum dots prepared in the invention has higher resolution (up to sub-100nm), good patterning ability and excellent photoelectric properties, can form photoetching patterns through spin coating, exposure, development and other processes, is suitable for ultraviolet, extreme ultraviolet and electron beam photoetching, and can meet various micro-nano processing requirements.

The application discloses a copper-clad plate based on montmorillonite glass fiber and a preparation method thereof, and belongs to the technical field of copper-clad plates. The copper-clad plate is mainly prepared by replacing traditional glass fiber cloth with montmorillonite glass fiber cloth with a surface graphene film, so that the copper-clad plate has high conductivity, high thermal conductivity and mechanical strength, and is suitable for high-frequency communication, high-power electronics and other fields. The preparation process is simple, compatible with the existing production line, and has significant technical advantages and industrial application prospects.

This invention discloses a high-safety, high-energy-density chalcogenide all-solid-state battery and its preparation method, belonging to the field of all-solid-state battery technology. The battery includes a positive electrode, a chalcogenide solid electrolyte layer, and... SnF2‑In The phase change alloy thermal response layer and negative electrode have a thermal response layer thickness of <5μm, coated only on the outer periphery of the battery and the interface between adjacent batteries. Its operating initiation temperature is 50-100℃ higher than the high-temperature, high-pressure sintering temperature of 570℃. This invention achieves a 99.2% volumetric energy density retention rate by precisely defining the coating area, thickness, and temperature matching relationship of the thermal response layer. The early expansion rate of the thermal response layer after sintering is controlled at 4.8%, the probability of preventing thermal runaway chain propagation between adjacent batteries reaches 95.0%, and the thermal conductivity is reduced by 83% compared to structures without a barrier layer. While ensuring composite safety functions, it does not compromise the core commercial advantages of all-solid-state batteries, and has broad industrialization prospects.