33results about How to "Good process compatibility" patented technology

The application belongs to the technical field of lithium batteries, and discloses a gel electrolyte taking a functionalized two-dimensional MXene material as a dispersant as well as a preparation method and application of the gel electrolyte. The gel electrolyte comprises a functionalized MXene material and a basic electrolyte; the functionalized MXene material is obtained by the following method: 1) treating a MAX phase material with a solution containing HCl and LiF, intercalating, peeling off, and then reacting with a diazonium salt solution to obtain a sulfonic acid functionalized MXene material. The application further discloses a preparation method of the gel electrolyte. The application reconstructs a lithium ion solvation structure, reduces a desolvation energy barrier, homogenizes a bulk phase electric field and ion flow, cooperatively induces formation of a stable SEI interface rich in inorganic species, significantly inhibits lithium dendrite growth, and improves interface kinetic stability. The method is simple and low in cost. The electrolyte is used in a lithium metal battery and exhibits excellent cycle performance.

The application provides a coiled tube heat exchanger using spherical clamping strips to fix tube bundles, and belongs to the technical field of heat exchange equipment, and comprises a central cylinder and a plurality of clamping strips with spherical protrusions arranged on the outer wall of the central cylinder. The upper surface of the clamping strip is provided with a spherical protrusion structure, and adjacent spherical protrusions constitute a heat exchange tube positioning element. The spacing between the spherical structures is optimized to match the arrangement of the tube bundles, and the outer surface of the central cylinder is wound with heat exchange tubes. The clamping strip with the spherical protrusion adopts a reverse stamping process in the manufacturing process, so that the processing surface is located on the non-contact side of the heat exchange tube, effectively avoiding direct friction damage of the processing defects to the tube wall. The spherical streamline structure reduces the turbulence intensity when the shell side fluid flows around, effectively reduces the shell side pressure drop while ensuring the positioning accuracy of the heat exchange tube, and improves the heat transfer efficiency of the heat exchanger. The clamping strip with the spherical protrusion omits the independent welding area required by the traditional tube clamp, thereby reducing the material consumption of the clamping strip.

The application relates to the technical field of semiconductor bridge electrostatic discharge protection and current protection, and discloses an electrostatic discharge and current protection circuit of a semiconductor bridge, which comprises an ESD protection circuit, a current protection circuit and an NMOS connected in parallel, the ESD protection circuit comprises a bidirectional transient suppression diode and a capacitor connected in parallel, the bidirectional transient suppression diode clamps a transient high voltage by breakdown conduction, the voltage is limited in a safe range, the capacitor reduces a voltage rising rate and suppresses overshoot by shunting and absorbing a transient current, the NMOS provides a low-resistance discharge path, and the voltage and current impact applied to the semiconductor bridge are reduced; the current protection circuit comprises a bidirectional rectifier circuit and a detection circuit; and the NMOS is connected between the detection circuits. The application can realize ESD protection and current protection of the semiconductor bridge, prevents current from damaging the structure, and guarantees the safety of the semiconductor bridge working in an electromagnetic and ESD environment.

The application discloses a method for detecting self-interstitial atom type dislocations in heavily arsenic-doped substrates. The method is based on the fact that self-interstitial silicon atoms in heavily arsenic-doped substrates have a thermal activation threshold effect during high-temperature epitaxy. When the effective thermal treatment time of epitaxy reaches a critical aggregation time τ c , the dispersed point defect state self-interstitial atoms can be excited and aggregated into an extended dislocation state that can be detected. The method comprises the following steps: pretreating the heavily arsenic-doped substrate; performing epitaxial growth under process conditions that satisfy the thermal activation threshold, so that the latent self-interstitial atom defects are made dominant; identifying characteristic signals by using SP1 surface scattering scanning; and optionally performing microscope observation, chemical corrosion verification and substrate trace detection. The application realizes effective detection of latent self-interstitial atom type dislocations in heavily arsenic-doped substrates, provides a quantifiable process window, and has the advantages of high detection sensitivity, good reliability and easy industrial integration.

This invention discloses a high-safety, high-energy-density chalcogenide all-solid-state battery and its preparation method, belonging to the field of all-solid-state battery technology. The battery includes a positive electrode, a chalcogenide solid electrolyte layer, and... SnF2‑In The phase change alloy thermal response layer and negative electrode have a thermal response layer thickness of <5μm, coated only on the outer periphery of the battery and the interface between adjacent batteries. Its operating initiation temperature is 50-100℃ higher than the high-temperature, high-pressure sintering temperature of 570℃. This invention achieves a 99.2% volumetric energy density retention rate by precisely defining the coating area, thickness, and temperature matching relationship of the thermal response layer. The early expansion rate of the thermal response layer after sintering is controlled at 4.8%, the probability of preventing thermal runaway chain propagation between adjacent batteries reaches 95.0%, and the thermal conductivity is reduced by 83% compared to structures without a barrier layer. While ensuring composite safety functions, it does not compromise the core commercial advantages of all-solid-state batteries, and has broad industrialization prospects.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The application relates to the technical field of textile printing and dyeing, and discloses a waterless printing and dyeing process intelligent control method and system.The method comprises the following steps: collecting dye dispersion and fabric fiber density data in a waterless medium, and generating an initial concentration distribution map; inputting a convolutional neural network to identify concentration instability regions and local deviation values; if the deviation exceeds a preset threshold, iteratively optimizing dye injection parameters to obtain an optimized concentration distribution map; segmenting the regions and extracting dye penetration path vectors of high fiber density regions; determining regional adsorption adjustment coefficients through a support vector machine; updating the parameters to obtain a dynamic concentration regulation sequence; iteratively optimizing the final uniform coloring distribution through coloring simulation; and extracting quality indicators to optimize process parameters and determine a production compatibility scheme.The application solves the problem of uneven dye dispersion through multi-dimensional data fusion and intelligent algorithm regulation, and improves coloring uniformity, process stability and production compatibility.

This invention discloses a low-dielectric glass material, glass-ceramic, and a method for preparing TGV through-holes for integrated circuit packaging. The glass material is composed of SiO2, B2O3, Al2O3, RO, R2O, and rare earth oxides Gd2O3 / La2O3, satisfying a SiO2 / B2O3 molar ratio of 2.0~3.5 and an Al2O3 / (Gd2O3+La2O3) molar ratio of 1:1~4:1. Through the "mixed base-like effect" and lattice distortion effect generated by the Gd2O3 / La2O3 dual doping, a dielectric constant ≤4.6, dielectric loss ≤0.001, and CTE 32~50 × 10⁻⁶ are achieved. ‑7 / °C. Further heat treatment yields a glass-ceramic containing single-crystal β-CaSiO3 phase, with a flexural strength ≥250 MPa. Based on this, laser-induced modification combined with wet etching is used to form TGV vias with an aspect ratio ≥50:1, followed by pulsed copper plating for filling, and low-temperature sealing with Kovar alloy at 975°C. Slow cooling and compressive stress design suppress bubbles and cracks. This invention solves the problems of signal loss, thermal stress failure, and insufficient mechanical strength in high-frequency packaging, and is suitable for RF connectors, MEMS, and 3D system-level packaging.

This utility model discloses an upper pressure roller assembly for a paper pressing mechanism based on a roller in carton forming, belonging to the technical field of carton forming equipment components. This utility model includes an upper pressure roller mechanism, which is composed of multiple structures. The upper pressure roller assembly is designed as an integrated composite structure. Relying on the sliding connection between the upper movable wall plate and the first slider, the entire assembly can be quickly adjusted laterally to adapt to different specifications of cardboard, enabling multi-variety production switching without stopping the machine for component replacement. The hinged design of the swing arm bearing pin and connecting rod, combined with the low-friction rotation characteristics of the first bearing, forms a dynamic transmission link. This structural innovation not only achieves synchronous operation of cardboard conveying and pre-crimming, but also improves the equipment's adaptability to complex working conditions through modular design. Especially when handling wide or irregularly shaped cardboard, it can significantly reduce manual adjustment time and improve the flexible production capacity of the production line.

The application discloses a kind of copper electrode laser curing system and method of TOPCon solar cell, the system includes mid-infrared laser generation module, beam shaping and energy management module, precision motion and positioning platform and synchronous control and monitoring module.The method used is: after coating copper paste on the back silver seed layer of TOPCon battery, laser beam is irradiated, by accurately controlling laser energy density and pulse width, energy is selectively resonant absorbed by copper paste organic matter, millisecond level rapid curing is realized, while ensuring that energy density is lower than the damage threshold of lower layer aluminum oxide / silicon nitride passivation film, so that the base temperature rise is lower than 200 DEG C.The application overcomes the defects of traditional thermal curing, such as low efficiency, high energy consumption and easy damage to passivation layer, and provides an efficient, reliable and non-damage battery performance industrialization solution for TOPCon battery low-cost "de-silverization".

This invention discloses a low-warpage DBC ceramic copper-clad laminate and its fabrication method, belonging to the field of power electronic packaging technology. The ceramic copper-clad laminate includes a ceramic substrate and copper layers bonded to its front and back sides. The improvement lies in that at least one stress-relieving trench is etched around the four corners of the back copper layer, penetrating the thickness of the copper layer, exposing the ceramic substrate, and not extending to the edge of the copper layer. This trench structure actively interrupts the transmission path of welding thermal stress within the continuous copper layer, thereby significantly reducing warpage deformation of the substrate after welding. This invention also provides a corresponding fabrication method; this trench structure can be simultaneously completed in existing patterned etching processes, exhibiting good process compatibility. This invention effectively solves the problem of DBC substrate welding warpage from the structural source, improving the reliability of power modules.

The invention provides preparation of an alpha-diimine nickel complex and application of the alpha-diimine nickel complex in olefin polymerization. The complex is synthesized by reacting acenaphthequinone with a specific aniline compound in glacial acetic acid and acetonitrile to generate a ligand and then coordinating with Ni (DME) Br2 in an inert atmosphere. The complex shows excellent catalytic activity and thermal stability in polymerization of ethylene and long-chain alpha-olefin, the highest polymerization activity of the complex in 1-octylene can reach 3.54 * 10 < 5 > g.mol <-1 >. H <-1 >, and efficient catalysis can be kept in a wide temperature range; according to the present invention, by adjusting the steric hindrance of the ligand substituent, the accurate regulation and control of the molecular weight, the branching degree and the distribution of the polymer can be achieved, the defect of insufficient activity of the existing alpha-diimine nickel catalyst in the long-chain alpha-olefin polymerization is made up, and the alpha-diimine nickel catalyst has characteristics of high thermal stability, adjustable structure and high catalytic activity, and has good industrial application potential.

The application belongs to the field of micro-nano photonics and infrared sensing, and relates to an infrared broadband absorption metasurface structure. A structure of metal layer-dielectric layer-metal layer is adopted, the upper and lower metal layers adopt platinum, the dielectric layer uses traditional material silicon, and array arrangement is realized by combining different size sub-units, an infrared broadband absorption metasurface based on a square bevel structure is designed, and an average absorption rate of more than 60% in the 8-13um atmospheric window band is realized. The bottom metal and the dielectric layer are uniform layer structures, and the top metal layer adopts a square bevel of one angle, the ratio of the bevel to the square side length is related to the absorption wavelength. The application regulates the light field based on micro-nano structure parameter change, has good wavelength selectivity and modulation performance, the selected material has good chemical stability, and has practicability and process compatibility.

The application discloses a III-nitride transistor structure capable of reducing leakage current and a manufacturing method thereof. The III-nitride transistor structure comprises a first heterojunction and a second heterojunction which are arranged in a stack mode, and the first heterojunction and the second heterojunction are electrically isolated by a high-resistance material and / or an insertion layer; a first electrode, a second electrode and a first gate electrode matched with the first heterojunction, a third semiconductor is arranged between the first gate electrode and the first heterojunction, and the first gate electrode is electrically connected with the first electrode; a source electrode, a drain electrode and a second gate electrode matched with the second heterojunction, the source electrode and the drain electrode are electrically connected with the first gate electrode and the second electrode respectively, and a sixth semiconductor is arranged between the second gate electrode and the second heterojunction. The III-nitride transistor structure provided by the application can effectively reduce the reverse conduction voltage of a device and reduce the area of the device.

This invention discloses a high-safety, high-cycle-life in-situ cured gel polymer electrolyte and its preparation method, belonging to the field of lithium-ion battery technology. The electrolyte is formed by in-situ polymerization of a gel precursor solution inside the battery triggered by an energy field. The precursor solution contains acrylamide and / or methacrylamide polymerizable monomers, multifunctional acrylate and / or methacrylate crosslinking agents, phosphorus-containing polymerizable flame-retardant components, an initiator, lithium salt, and an organic solvent. The preparation method includes preparing the precursor solution, injecting it into the pores of the battery cell, and in-situ curing triggered by heat or ultraviolet light. Through the synergistic effect of in-situ gelation and gradient electrodes, continuous and stable ion transport channels and flame-retardant networks are constructed within the electrode pores, thereby simultaneously improving the battery's abuse safety and low-temperature cycle life.

The utility model discloses a high heat dissipation type combined circuit board connecting structure belongs to electronic circuit packaging technical field, including circuit board, aluminium base plate and glass board, the aluminium base plate partial inlay is in glass board, the surface fixed with a plurality of heat conduction bosses of aluminium base plate, the glass board inside is equipped with a plurality of heat conduction through -hole, and heat conduction through -hole and the heat conduction boss on aluminium base plate correspond inlay, and the heat conduction through -hole is filled with graphene heat conduction glue, the surface of glass board is provided with copper foil wiring area, and the copper foil wiring area is covered with solder resist layer outward. This high heat dissipation type combined circuit board connecting structure, convenient connection has solved the contradiction of traditional circuit board heat dissipation and wiring, is applicable to new energy automobile, industrial power supply and other high heat consumption electronic equipment, has the advantages such as high heat dissipation efficiency, strong reliability, good process compatibility.

The present application belongs to the technical field of functional materials, and particularly relates to a coated carbon nanotube composite material and a preparation method thereof, and a functional polymer composite material and a preparation method thereof. The coated carbon nanotube composite material provided by the present application has a core-shell-shell structure coated in turn from inside to outside, wherein the carbon nanotube constitutes an inner core providing mechanical enhancement and an electrically conductive path, a silver layer coated on the surface of the carbon nanotube serves as an intermediate layer and a first antibacterial component, a copper oxide nanoparticle layer coated on the surface of the silver layer serves as an outer shell layer and a second antibacterial component, and the copper oxide layer and the silver layer form a heterojunction. The specific structure produces a synergistic effect of silver, copper oxide and carbon nanotube, so that the composite powder has the functions of high-efficiency antibiosis, antistatic and mechanical enhancement.

The application discloses a preparation process of a lead zirconate titanate (PZT) film layer, a film layer structure and application thereof, and relates to the technical field of piezoelectric material film layer preparation. The preparation process comprises the following steps: S1, forming a low tensile stress silicon nitride layer on the surface of a substrate, which is used for homogenizing the in-plane stress gradient of a wafer; and S2, forming a piezoelectric functional layer on the surface of the silicon nitride layer in a sputtering mode, wherein the piezoelectric thin film material of the piezoelectric functional layer is lead zirconate titanate (PZT). The film layer structure and the preparation process thereof adopt the silicon nitride layer to relieve the thermal mismatch stress of the piezoelectric functional layer system, can improve the piezoelectric constant e31 of the central region of the wafer, and improve the uniformity of the whole wafer.

This invention discloses a foamed aluminum electrode foil for aluminum electrolytic capacitors and its preparation method, belonging to the technical field of aluminum electrolytic capacitors. The preparation method of the foamed aluminum electrode foil includes the following steps: preparing an aluminum powder slurry, uniformly coating it onto the surface of a pretreated foamed aluminum foil, and then drying and step-by-step sintering to form a strong metallurgical bond between the aluminum powder particles and between the aluminum powder particles and the foamed aluminum matrix, thus obtaining the electrode foil. This invention utilizes the inherent three-dimensional porous structure of foamed aluminum to obtain an ultra-high specific surface area, while simultaneously constructing a highly efficient three-dimensional conductive network through a dense aluminum layer on the surface, significantly enhancing the mechanical strength of the foil. The resulting electrode foil possesses high specific capacitance, low equivalent series resistance, high mechanical strength, and good processability, providing a key material foundation for the preparation of next-generation high-performance, high-capacity, low-ESR aluminum electrolytic capacitors.

The application discloses a temperature and humidity integrated sensor based on a paper folding structure, which comprises a wireless transmission structure, a thermal driving beam structure, a paper folding beam structure and an interdigital capacitive humidity sensing structure. When the ambient temperature is higher than a plurality of set temperature points, the paper folding beam structure is bent to cause a plurality of contact electrodes to contact with contact electrodes, an LC resonant circuit is formed by the interdigital capacitive humidity sensing structure and the wireless transmission structure, the sequential contact of the contact electrodes and the contact electrodes causes the change of an induced capacitance, and the resonant frequency is greatly changed. When the ambient humidity changes, the dielectric constant of a film material in the interdigital capacitive humidity sensing structure changes to cause the slight change of the interdigital capacitance, so that the resonant frequency is slightly deviated near the temperature jump point. The temperature and humidity resonant frequency sensing information is collected in a passive and wireless mode through electromagnetic coupling, the simultaneous measurement of the temperature and humidity sensor is realized, and the scheme has the advantages of multi-parameter sensing, passive and wireless and simple structure.

The application provides an epsilon phase gallium oxide based material and a crystal student growth method and use thereof, the crystal student growth method comprising epitaxial growth of the epsilon phase gallium oxide based material on a substrate with a polar surface, so that the epsilon phase gallium oxide based material has the same polarization direction as the polar surface. The application selects a substrate with a specific surface polarity and controls the growth of high-quality crystals through substrate and template engineering, thereby guiding controllable polarity growth by using the specific substrate as a template. Thus, active regulation of the polarization direction of the epsilon phase gallium oxide based material can be supported, the bottleneck of single polarization characteristics of the material system is broken, a key material foundation for developing a new generation of high-performance functional devices based on polarization engineering is laid, and the application has important scientific and application values.

The application provides an air atmosphere near-infrared laser sinterable oxidation-resistant copper paste and a preparation method thereof, and the main body of the paste is Cu@glass, which comprises a copper core, and a Bi2O3-B2O3-ZnO glass shell layer with a mass fraction of 5%-20% coated outside the copper core, and the particle size of the copper core is 200 nm-500 nm. The copper paste prepared by using the Cu@glass material greatly improves the near-infrared laser absorption efficiency and oxidation resistance of the Cu@glass particles under the coating structure of the glass shell, and the initial oxidation temperature and the near-infrared light absorption rate of the 10% glass-coated Cu@glass particles are 294 DEG C and 61.8% respectively, so that the stable necking and densification of the copper paste under the irradiation of the near-infrared laser are realized under the condition of the air atmosphere, and a copper conductor film layer with conductivity is obtained.

This invention relates to a flip-chip structure and underfill packaging method for miniaturized crystal oscillators. The structure includes a packaging substrate, a quartz crystal resonator, an oscillating IC chip, and a sealing cap. Both the resonator and the IC chip are flip-chip bonded to the substrate via conductive bumps, with the resonator bumps being higher than the IC chip bumps, forming a vibration gap. A low-modulus underfill adhesive layer is filled into the gap between the chip and the substrate to buffer stress and redistribute thermomechanical stress, ensuring the stability of the resonant frequency. The packaging method includes solder placement, chip mounting, reflow soldering, underfill adhesive injection and curing, and hermetically sealed packaging steps. This invention effectively suppresses frequency drift caused by temperature stress through the synergistic effect of the vibration gap design and the low-modulus adhesive layer, while achieving high integration, low electromagnetic interference, and high reliability in miniaturized crystal oscillator packaging through a fully flip-chip and sealed structure.

The utility model discloses a kind of detection calibration devices of screen printing squeegee to printing screen pressure, squeegee holder upper end is centrally fixed detection base plate, detection base plate is centrally equipped with limit slot, and limit card frame is fixed on detection base plate;Squeegee cylinder is sequentially fixed with pressure sensor through transmission rod, pressure pad;Limit slot inner fine adjustment assembly includes upper adjusting block and lower adjusting block in limit slot upper and lower superimposed, slope cooperation;When adjusting screw is reversed in screw hole, lower adjusting block is repeatedly moved along the inside and outside direction of limit slot;When squeegee cylinder drives pressure sensor to descend, abuts upper adjusting block to carry out pressure measurement. Without starting test, accurate, reliable, stablely complete the detection calibration work of squeegee to the down pressure of printing screen of silk screen printing machine, accurately control printing effect;Effectively reduce calibration operation difficulty, effectively improve calibration efficiency;Calibration device and method and the structure and process compatibility of existing silk screen printing machine equipment are good, easy to popularize and apply.

The invention belongs to the technical field of optical fiber heat flux density sensing, and discloses a gradient strain coupling FBG heat flux density sensor preparation method, which mainly comprises an optical fiber microgroove processing technology, a metal bonding layer preparation technology based on a magnetron sputtering technology and a gradient strain coupling sensitive layer preparation technology based on an electroplating technology. The method is characterized in that a microgroove is prepared on the surface of the optical fiber through a hydrofluoric acid wet etching process to improve the bonding strength with a metal layer; a first metal layer with high bonding strength is prepared on the surface of the microgroove optical fiber through a magnetron sputtering process; and a gradient strain coupled second metal layer is prepared on the surface of the magnetron sputtering metal layer through a variable-diameter electroplating process. According to the method, the optical fiber microgroove structure and the oxyphilic metal material are corroded through hydrofluoric acid to improve the bonding strength of the optical fiber and the metal, the FBG spectrum is broadened through the second metal layer subjected to gradient strain coupling, the heat flux density sensing performance is optimized and improved, the method can be suitable for machining of various metalized FBG metal layer structures, the process flexibility is high, and the application range is wide. The depth of the microgroove, the thickness of each metal layer and the gradient strain characteristic of the outer metal layer can be flexibly controlled, the heterogeneous material bonding strength of the special metallized fiber is effectively improved, and the preparation cost of the special metallized FBG is reduced.

This invention belongs to the field of lithium-ion battery material technology, specifically relating to a high-safety, high-cycle-life in-situ cured gel polymer electrolyte, its preparation method, and its applications. The electrolyte uses a multi-arm crosslinking agent containing a central atom and grafted with oxygen double and single bonds as its core, copolymerizing with the main crosslinking agent N,N′-methylenebisacrylamide to form a three-dimensional network structure. The X=O bond ratio in the multi-arm crosslinking agent is not less than 10%, which can catalyze carbonization at high temperatures, block thermal oxygen, and capture free radicals, endowing the system with intrinsically high flame retardancy. This network also promotes lithium-ion migration and stabilizes the electrode interface, thereby significantly improving battery cycle performance and safety. The electrolyte membrane of this invention has a limiting oxygen index ≥26%, and the battery manufactured using this invention retains ≥80% of its capacity after 500 cycles at 1C rate. It also passes the UL1642 needle penetration test, exhibiting both high safety and long lifespan characteristics, making it suitable for power batteries and energy storage applications.

The invention provides copolymerized polyamide-imide, a film, a preparation method and an electronic device, and belongs to the field of flexible display materials. The copolymerized polyamide-imide is at least prepared from a reaction system containing the following monomers: a) a fluorine-containing aromatic dianhydride monomer; b) an aromatic diamine monomer containing ether bonds and fluorine; and c) an aromatic diacyl chloride monomer. The copolymerized polyamide-imide disclosed by the invention is prepared by carrying out polycondensation and chemical imidization on a dianhydride component, a diamine component and an acyl chloride component in a polar solvent; a rigid benzene ring structure and a hydrogen bond in a main chain can improve the modulus to be larger than or equal to 6 Gpa, the size stability is high, the thermal expansion coefficient is smaller than or equal to 10 ppm / DEG C, meanwhile, a large-steric-hindrance side group of a benzene ring on the main chain can effectively improve the optical performance of the thin film, light transmittance is prevented from being affected by low-temperature dropwise adding and step-by-step imidization (the light transmittance of the waveband of 360-780 nm is larger than or equal to 88%), the benzene ring structure containing an ether bond on the main chain, and the light transmittance of the thin film is larger than or equal to 80%. The tearing strength of the membrane material can be effectively improved.

This application provides a broadband filtering 180° phase shifter, chip, and device based on magnetically coupled path switching, including an RF input terminal, a magnetically coupled path switchable network, a matching network, and an RF output terminal. The magnetically coupled path switchable network includes a first inductor, second and third inductors forming positive and negative magnetic couplings with it respectively, and first and second transistors connected to the second and third inductors respectively. The matching network includes first and second series matching units and a parallel matching unit. By alternately controlling the transistors to be on and off, the phase shifter exhibits a consistent third-order bandpass response in both the reference state and the phase-shifted state: the first capacitor and the first inductor at the input terminal are connected in parallel to form a first resonator; the off transistor and the connected inductor form a second resonator; the on transistor grounds the corresponding series matching unit, forming a third resonator with the parallel matching unit, and another series matching unit provides inter-stage coupling. This application achieves broadband high-amplitude phase consistency, significantly improving phase-shifting accuracy.

This invention belongs to the field of soft magnetic materials technology, and discloses a high-performance Fe-Y-B ternary amorphous soft magnetic alloy thin strip based on trace yttrium purification of the melt to inhibit surface crystallization and its preparation method. The atomic percentage composition of this alloy satisfies Fe (85‑x) Y x B 15 (0.5≤x≤3.0) or Fe 85 Y y B (15‑y) (0.5≤y≤3.0). This invention introduces trace amounts of rare earth element Y into a Fe-B binary alloy. Utilizing the high affinity of Y for impurity elements in the melt, compounds are formed during the smelting process and floated to the surface for removal, thus deeply purifying the melt. This fundamentally eliminates the nucleation sites for heterogeneous α-Fe on the thin strip surface during rapid quenching, completely suppressing surface crystallization. The resulting alloy thin strip possesses a completely amorphous structure, maintaining high saturation magnetic induction while exhibiting high amorphous formation capability, extremely low coercivity, and high effective permeability. This invention features a simple composition and good process compatibility, solving the problem of simultaneously achieving surface crystallization and soft magnetic properties in high-iron-content Fe-based amorphous alloys.