Polymer composite material embedded microcapacitor and preparation method thereof

A composite material and polymer technology, applied in the direction of multilayer capacitors, fixed capacitor parts, fixed capacitor dielectrics, etc., can solve the problems of low electrical performance and poor reliability, and achieve high dielectric constant, low loss, and improved The effect of electric constant

Inactive Publication Date: 2011-01-12
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, most passive devices exist in the form of discrete components, occupying

Method used

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  • Polymer composite material embedded microcapacitor and preparation method thereof
  • Polymer composite material embedded microcapacitor and preparation method thereof
  • Polymer composite material embedded microcapacitor and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0023] The method for preparing polymer composite embedded microcapacitors provided by the present invention includes the following steps:

[0024] 1) Use in-situ polymerization to disperse BT nanoparticles into PI to prepare dielectric thin film PI / BT composites. The specific process is as follows:

[0025] (11) Mix BT nanoparticles with a diameter of 50-300 nm and a coupling agent with a volume percentage of 1 to 3 vol% in an alcohol solution. After mixing, stir ultrasonically for 1-2 hours, and then bake at 80-100°C. dry;

[0026] (12) First add the solvent N,N-dimethylacetamide (DMAc) into the container, then add 10-50vol% BT nanoparticles in the container, and add the corresponding content of 4,4'-diamino Terephthalic ether (ODA), ultrasonic for 40-60 minutes to milky suspension, stir for 10-30 minutes;

[0027] (13) Then, while stirring, add pyromellitic dianhydride (PMDA) with a molar ratio of 1:1 to ODA into the container of step (12) three times at an interval of 8-10 minute...

Embodiment 1

[0039] The embedded microcapacitor provided by the present invention is such as figure 1 As shown, the upper electrode 11, the dielectric film 12 and the lower electrode 13 are included. Wherein, the dielectric film 12 uses the PI / BT composite material with a thickness of 10um.

[0040] The PI / BT composite material of the present invention includes polymer PI and BT nanoparticles dispersed in the polymer; the volume content of the BT nanoparticles is 10 vol% of the total volume of the PI / BT composite material.

[0041] The material of the upper electrode and the lower electrode is TiW / Cu, and the thickness of the metal electrode is 200 nm.

[0042] The manufacturing method of the embedded microcapacitor provided by the present invention includes the following steps:

[0043] 1) Use in-situ polymerization to disperse BT nanoparticles into PI to prepare dielectric thin film PI / BT composites. The specific process is as follows:

[0044] (11) Mix BT nanoparticles with a diameter of 50 nm a...

Embodiment 2

[0055] The embedded microcapacitor provided by the present invention is such as figure 1 As shown, the upper electrode 11, the dielectric film 12 and the lower electrode 13 are included. Wherein, the dielectric film 12 uses the PI / BT composite material with a thickness of 50um.

[0056] The PI / BT composite material of the present invention includes polymer PI and BT nanoparticles dispersed in the polymer; the volume content of the BT nanoparticles is 40 vol% of the total volume of the PI / BT composite material.

[0057] The material of the upper electrode and the lower electrode is TiW / Cu, and the thickness of the metal electrode is 562 nm.

[0058] The manufacturing method of the embedded microcapacitor provided by the present invention includes the following steps, such as figure 2 Shown.

[0059] 1) Use in-situ polymerization to disperse BT nanoparticles into PI to prepare dielectric thin film PI / BT composites. The specific process is as follows:

[0060] (11) Mix BT nanoparticles ...

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Abstract

The invention relates to a polymer composite material embedded microcapacitor and a preparation method thereof, belonging to the technical field of the novel microelectronic material and element. The microcapacitor comprises an upper electrode, a dielectric film and a lower electrode which are stacked in turn, wherein the dielectric film is prepared from polyimide/barium titanate (PI/BT) composite material. The method of the invention comprises the following steps: adopting the in-situ polymerization method to disperse BT nanoparticles in PI and prepare the PI/BT composite material of the dielectric film; adopting the casting method to stick the PI/BT composite material to a copper plate substrate, coating a layer of photoresist on the obtained dielectric film, performing ultraviolet exposure according to a template drawing to obtain patterned photoresist; sputtering a metal layer on the dielectric film and photoresist; soaking in acetone solution to form the patterned upper electrode; performing RIE treatment in the mixed gas of oxygen and trifluoromethane, and cleaning with ultrasonic wave to obtain the microcapacitor. By using the method of the invention, the uniform and dense dielectric film with large area can be obtained; and the microcapacitor can work stably at a higher temperature or a lower temperature.

Description

Technical field [0001] The invention belongs to the technical field of new microelectronic materials and devices, and particularly relates to a manufacturing technology of embedded microcapacitors based on a novel organic-inorganic composite material polyimide / barium titanate (PI / BT). Background technique [0002] Electronic components include active devices and passive devices. In recent years, passive devices have received more and more attention. At present, most passive devices exist in the form of discrete components, occupying about 80% of the area of ​​the substrate, with low electrical performance and poor reliability. The embedded passive device adopts a multilayer PCB (Printed Circuit Board, printed circuit board) technology to embed the passive device deep in the buried layer to save surface area. At the same time, it can reduce impedance, improve reliability and improve electrical performance. Therefore, embedded passive devices have the potential to solve these pr...

Claims

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Application Information

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IPC IPC(8): H01G4/06H01G4/30
Inventor 谢丹武潇任天令党智敏
Owner TSINGHUA UNIV
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