2900 results about "Active devices" patented technology

A counterforce-counteracting device for a nailer comprises an active device, a rotating member, and a weight device. The active device drives the rotating member and the weight device to move. After the active device moves, the weight device is driven by the rotating member to produce a counterforce, so as to counteract the counterforce of the nailer. Thereby, such a device is secure and is easy to assemble.

System, devices and methods are presented that integrate stretchable or flexible circuitry, including arrays of active devices for enhanced sensing, diagnostic, and therapeutic capabilities. The invention enables conformal sensing contact with tissues of interest, such as the inner wall of a lumen, a the brain, or the surface of the heart. Such direct, conformal contact increases accuracy of measurement and delivery of therapy. Further, the invention enables the incorporation of both sensing and therapeutic devices on the same substrate allowing for faster treatment of diseased tissue and fewer devices to perform the same procedure.

The present invention provides a strained / SGOI structure that includes an active device region of a relaxed SiGe layer, a strained Si layer located atop the relaxed SiGe layer, a raised source / drain region located atop a portion of the strained Si layer, and a stack comprising at least a gate dielectric and a gate polySi located on another portion of the strained Si layer; and a raised trench oxide region surrounding the active device region. The present invention also provides a method of forming such a structure. In the inventive method, the gate dielectric is formed prior to trench isolation formation thereby avoiding many of the problems associated with prior art processes in which the trench oxide is formed prior to gate dielectric formation.

An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.

Enables multiple devices of a same user to logon automatically. An example of a method includes: registering the user and the user's multiple user devices with a Multiple Device Authentication (MDA) apparatus; authenticating at least one of the user's registered devices by the MDA apparatus and selecting the authenticated device as a master device; selecting one or more slave devices from the registered user devices; adding the selected master device and one or more selected slave devices to an active device table; if a user device accessing the MDA apparatus is in the active device table, causing the user device logon directly and automatically without first authenticating the user device. Operation of authentication is needed only once to enable user's multiple devices to logon the server automatically and conveniently. Seamless switch between different devices can be implemented, resulting in improved single-sign-on solution over the prior art.

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized by that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.

System, devices and methods are presented that integrate stretchable or flexible circuitry, including arrays of active devices for enhanced sensing, diagnostic, and therapeutic capabilities. The invention enables conformal sensing contact with tissues of interest, such as the inner wall of a lumen, a the brain, or the surface of the heart. Such direct, conformal contact increases accuracy of measurement and delivery of therapy. Further, the invention enables the incorporation of both sensing and therapeutic devices on the same substrate allowing for faster treatment of diseased tissue and fewer devices to perform the same procedure.

System, devices and methods are presented that integrate stretchable or flexible circuitry, including arrays of active devices for enhanced sensing, diagnostic, and therapeutic capabilities. The invention enables conformal sensing contact with tissues of interest, such as the inner wall of a lumen, a the brain, or the surface of the heart. Such direct, conformal contact increases accuracy of measurement and delivery of therapy. Further, the invention enables the incorporation of both sensing and therapeutic devices on the same substrate allowing for faster treatment of diseased tissue and fewer devices to perform the same procedure.

A contact is formed within an active region of a substrate at the edge of a die, preferably within the first metallization level in the active region of the substrate. An opening having sloped sidewalls is then etched into the back side of the substrate, exposing a portion of the active region contact. An interconnect is formed on the opening sidewall to connect the active region contact with a die contact pad on the backside surface of the substrate. The active region contact preferably spans a boundary between two die, with the opening preferably etched across the boundary to permit inter-connects on opposing sidewalls of the opening to each contact the active region contact within different die, connecting the active region contact to die contact pads on different dice. The dice are then separated along the boundary, through the active region contact which becomes two separate active region contacts. By forming a shared contact opening spanning two dice, the backside contact is formed around the die edge and the backside surface area necessary for the contact opening is minimized. The backside contact allows direct placement of the integrated circuit die on contacts within the packaging, such as a ball grid array, eliminating the need for wire bonds. The need for a pad etch through passivation material overlying active devices on the front side of the die is also eliminated, and no mask levels are added for the devices formed on the front side.

An electro-optical device is disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer) having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wiring for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits are constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized in that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.

An integrated circuit chip having a heat spreader comprising CVD diamond extending along the chip support body and thermal vias extending through the support body in regions free of active devices or functional elements. The thermal vias may thermally conductive and electrically conductive or may be thermally conductive and electrically resistive. The integrated circuit chips may be 3D integrated circuit chips.

An active device provides protection from the sun or other bright light source for improved vision, using a variable opacity medium that is electronically controlled to cast a shadow on an eye of a user and / or to otherwise reduce the amount of the light incident on the eye, thereby reducing glare. Miniature cameras monitor the user's eye movements and the scene in front of the user. If a bright light is detected, one or more dark spots is created in the variable opacity medium that acts as a shade or light filter for a pupil of the eye. The variable opacity medium, cameras, and associated electronics can be used in connection with eyeglasses (including sunglasses), as part of a device worn by the user (such as a helmet), a windshield, mirror, or other optical element having a view port through which light can be seen by the user.

A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.

A method, apparatus and system are disclosed for redistributing memory allocation to portions of dynamic random access memory (DRAM) and dual in-line memory module (DIMM) devices that are underutilized, in order to balance memory usage more evenly amongst active devices so as to limit the amount of power and the thermal load consumed by an individual memory component. The disclosed method, apparatus and system are capable of identifying and tracking memory usage to minimize power consumption in a way that lessens the detrimental effects of “throttling” or reduced power modes for memory devices.

A silicon-based electro-optic modulator is based on forming a gate region of a first conductivity to partially overly a body region of a second conductivity type, with a relatively thin dielectric layer interposed between the contiguous portions of the gate and body regions. The modulator may be formed on an SOI platform, with the body region formed in the relatively thin silicon surface layer of the SOI structure and the gate region formed of a relatively thin silicon layer overlying the SOI structure. The doping in the gate and body regions is controlled to form lightly doped regions above and below the dielectric, thus defining the active region of the device. Advantageously, the optical electric field essentially coincides with the free carrier concentration area in this active device region. The application of a modulation signal thus causes the simultaneous accumulation, depletion or inversion of free carriers on both sides of the dielectric at the same time, resulting in high speed operation.

A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

System, devices and methods are presented that integrate stretchable or flexible circuitry, including arrays of active devices for enhanced sensing, diagnostic, and therapeutic capabilities. The invention enables conformal sensing contact with tissues of interest, such as the inner wall of a lumen, a the brain, or the surface of the heart. Such direct, conformal contact increases accuracy of measurement and delivery of therapy. Further, the invention enables the incorporation of both sensing and therapeutic devices on the same substrate allowing for faster treatment of diseased tissue and fewer devices to perform the same procedure.

A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.

A thermal path is formed in a layer transferred semiconductor structure. The layer transferred semiconductor structure has a semiconductor wafer and a handle wafer bonded to a top side of the semiconductor wafer. The semiconductor wafer has an active device layer formed therein. The thermal path is in contact with the active device layer within the semiconductor wafer. In some embodiments, the thermal path extends from the active device layer to a substrate layer of the handle wafer. In some embodiments, the thermal path extends from the active device layer to a back side external thermal contact below the active device layer.

A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

Power MOSFETs and fabrication processes for power MOSFETs use a continuous conductive gate structure within trenches to avoid problems arising from device topology caused when a gate bus extends above a substrate surface. The conductive gate structure forms gates in device trenches in an active device region and forms a gate bus in a gate bus trench. The gate bus trench that connects to the device trenches can be wide to facilitate forming a gate contact to the gate bus, while the device trenches can be narrow to maximize device density. CMP process can be used to planarize the conductive gate structure and / or overlying insulating layers. The processes are compatible with processes forming self-aligned or conventional contacts in the active device region.

A circuit for matching the impedance of an output load to an active device includes a transformer including a first winding having a terminal for coupling to the output of the active device and a second winding electromagnetically coupled to the first winding, and a plurality of taps, each of the plurality of taps having a first end coupled to a position on the second winding corresponding to a ratio of the second winding to first winding differing from other ones of the plurality of taps, and a second end. The matching circuit further includes a plurality of MEMS switches each having a control input for receiving a corresponding control signal, a first terminal coupled to the second end of a corresponding one of the plurality of taps, and a switched output selectively coupled to a matching junction in response to the corresponding control signal.

A method for fabricating organic light active devices using field-attractive Organic Light Active Material (“OLAM™”) microcapsules. The OLAM microcapsules are randomly dispersed within a monomer carrier fluid that is injected or otherwise disposed between two electrodes. The OLAM microcapsules may include additives that impart rheological properties, and other electrical, mechanical, optical and magnetic properties. The OLAM microcapsules form chains between the electrodes when an aligning field is applied. Holding the aligning field to keep the chains formed, the carrier fluid is cured and the OLAM microcapsule chains are locked into alignment between the electrodes. The problem of contamination of the OLAM material is the major factor limiting the display life span, and thus is a bar to commercial success. This fabrication method results in the corrosion sensitive OLAM material being protected by the microcapsule shell and the cured carrier, and the pixel alignment is automatic, since the OLAM microcapsule chains are formed only between the electrodes.

Disclosed herein are apparatus and methods for measuring error associated with the rotation of bearings (50) used within a pointing device (11) on board a space-based platform. The apparatus includes inductive, or “eddy current,” proximity sensors (1000) adapted for measuring the positioning of bearing components. The apparatus also includes processing capabilities (1010) for receiving data from the proximity sensors (1000), and producing compensation data. The compensation data is used in one of various techniques for correcting errors in the angular measurement or pointing of the device (11). The techniques disclosed herein include conducting an initial calibration of the proximity sensors (1000) and generating calibration data. Once in active use, sensor measurements are combined with calibration data to produce compensation data. Ongoing measurements may be used to update the calibration data as necessary.

A vehicle seat includes a seat back, a seat cushion, and a system for facilitating relieving of fatigue of a person sitting on the vehicle seat for many hours. The system includes an angle sensor installed within the seat back for sensing variations in an angle of a pelvic region of the person sitting on the vehicle seat, an active device installed within the seat back for pressure-supporting the pelvic region of the person, an actuating device connected to the active device for actuating the active device and a sequential control unit electrically connected to the angle sensor and the actuating device for controlling the operation of the actuating device, the angle sensor being constructed so as to send the sequential control unit signals representing values of variations in the angle of the pelvic region of the person, the sequential control unit being constructed such that, when a value represented by a signal sent to the sequential control unit from the angle sensor is more than a predetermined value, the sequential control unit sends the actuating device a command to actuate the actuating device, whereby the active device is actuated, to thereby control supporting pressure that is applied to the pelvic region of the person.

Described is a computer-implemented system and method that dynamically detects which input device (e.g., pen or mouse) is currently in use, and based on the device, varies a program's user interaction model to better optimize the user's ability to interact with the program via that input device. A tablet input subsystem receives pen and touch data, and also obtains keyboard and mouse data. The subsystem analyzes the data and determines which input device is currently active. The active device is mapped to an interaction model, whereby different user interface appearances, behaviors and the like may be presented to the user to facilitate improved interaction. For example, a program may change the size of user interface elements to enable the user to more accurately scroll and make selections. Timing, tolerances and thresholds may change. Pen hovering can become active, and interaction events received at the same location can be handled differently.

An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.

A semiconductor chip includes a through-silicon via (TSV), a device region, and a cross-talk prevention ring encircling one of the device region and the TSV. The TSV is isolated from substantially all device regions comprising active devices by the cross-talk prevention ring.

A touch sensing apparatus for receiving input from one or more touch stimulating devices employs a direct sequence spread spectrum (DSSS) signaling arrangement to transmit signals from the touch stimulating devices for identification and location determination. Active devices are powered by an EM field and generate a touch stimulating signal that is spread spectrum encoded for identification, and signal pickups in a propagation layer receive the touch stimulation signals which are identified by the DSSS encoding and located using received signal strength (RSS) techniques. Semi-active devices are powered by an EM field and receive code instructions to generate specific spread spectrum signals and generate a touch-stimulating signal. Touch stimulating devices are either tethered or tether-free, and powered by batteries or EM fields.

3-D ICs (18, 18′, 90) with integrated passive devices (IPDs) (38) having reduced cross-talk and high packing density are provided by stacking separately prefabricated substrates (20, 30, 34) coupled by through-substrate-vias (TSVs) (40). An active device (AD) substrate (20) has contacts on its upper portion (26). An isolator substrate (30) is bonded to the AD substrate (20) so that TSVs (4030) in the isolator substrate (30) are coupled to the contacts (26) on the AD substrate (20), and desirably has an interconnect zone (44) on its upper surface. An IPD substrate (34) is bonded to the isolator substrate (30) so that TSVs (4034) therein are coupled to the interconnect zone (44) on the isolator substrate (30) and / or TSVs (4030) therein. The IPDs (38) are formed on its upper surface and coupled by TSVs (4034, 4030) in the IPD (34) and isolator (30) substrates to devices (26) in the AD substrate (20). The isolator substrate (30) provides superior IPD (38) to AD (26) cross-talk attenuation while permitting each substrate (20, 30, 34) to have small high aspect ratio TSVs (40), facilitating high circuit packing density and efficient manufacturing.