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510results about How to "Simplify manufacturing steps" patented technology

Display device, manufacturing method thereof, and television set

A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.
Owner:SEMICON ENERGY LAB CO LTD

Display device, manufacturing method thereof, and television set

A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.
Owner:SEMICON ENERGY LAB CO LTD

Compact fluorescent lamp and method for manufacturing

This compact fluorescent lamp comprises a discharge tube arrangement with at least one discharge tube. The tube is formed of glass, encloses a discharge volume filled with a discharge gas and has a fluorescent phosphor coating disposed on the inner surface of the tube. The tube forms a continuous arc path and the tube is provided with electrodes disposed at each end of the arc path. The lamp also comprises a ballast circuit connected to the electrodes for controlling the current in the tube and a lamp base for connecting said lamp to a power supply through a socket. The lamp is enclosed in an outer envelope comprising a substantially spherical portion enclosing the tube arrangement and an elongated end portion enclosing the ballast circuit. The end portion of the outer envelope is closed and sealed by a sealing means of the same material as the material of the outer envelope. The sealing means is connected to the envelope in a hermetically sealing way. A method for manufacturing a compact fluorescent lamp as described above is also disclosed. In the method, an outer envelope with an open end on the base side is provided. The open end of the envelope is closed and sealed with a sealing means to provide a hermetic seal. The envelope is separated by cutting along a circumferential line into an upper part and a lower part. The ballast circuit is introduced into the lower part and respective connection points of the ballast circuit are connected to power supply lead-out wires. The discharge tube arrangement is connected to respective connection points of the ballast circuit by lead-in wires. The lead-in wires and the lead-out wires are short and need not be insulated. The ballast circuit and the discharge tube arrangement are held and supported in the outer envelope by the connecting wires and fixing means.
Owner:GENERAL ELECTRIC CO
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