179 results about "3d integrated circuit" patented technology

Three-dimensional (3D) integration schemes of fabricating a 3D integrated circuit in which the pFETs are located on an optimal crystallographic surface for that device and the nFETs are located on a optimal crystallographic surface for that type of device are provided. In accordance with a first 3D integration scheme of the present invention, first semiconductor devices are pre-built on a semiconductor surface of a first silicon-on-insulator (SOI) substrate and second semiconductor devices are pre-built on a semiconductor surface of a second SOI substrate. After pre-building those two structures, the structure are bonded together and interconnect through wafer-via through vias. In a second 3D integration scheme, a blanket silicon-on-insulator (SOI) substrate having a first SOI layer of a first crystallographic orientation is bonded to a surface of a pre-fabricating wafer having second semiconductor devices on a second SOI layer that has a different crystallographic orientation than the first SOI layer; and forming first semiconductor device on the first SOI layer.

A method and structure of connecting at least two integrated circuits in a 3D arrangement by a through silicon via which simultaneously connects a connection pad in a first integrated circuit and a connection pad in a second integrated circuit.

A method and structure of connecting at least two integrated circuits in a 3D arrangement by a through silicon via which simultaneously connects a connection pad in a first integrated circuit and a connection pad in a second integrated circuit.

The present invention discloses a semiconductor device. In one embodiment, the semiconductor device comprises a substrate, a diffusion stop layer formed on the substrate, an SOI layer formed on the diffusion stop layer, an MOSFET transistor formed on the SOI layer, and a TSV formed in a manner of penetrating through the substrate, the diffusion stop layer, the SOI layer, and a layer where the MOSFET transistor is located; and an interconnect structure connecting the MOSFET transistor and the TSV.

An integrated circuit chip having a heat spreader comprising CVD diamond extending along the chip support body and thermal vias extending through the support body in regions free of active devices or functional elements. The thermal vias may thermally conductive and electrically conductive or may be thermally conductive and electrically resistive. The integrated circuit chips may be 3D integrated circuit chips.

The present invention provides a 3D integrated circuit and a manufacturing method thereof. The circuit structure comprises: a semiconductor substrate; at least one semiconductor device formed on the upper surface of the semiconductor substrate; a through-Si-via through the semiconductor substrate and comprising an insulating layer covering sidewalls of the through-Si-via and conductive material filled in the insulating layer; an interconnection structure connecting the at least one semiconductor device and the through-Si-via; and a diffusion trapping region formed on the lower surface of the semiconductor substrate. The present invention is applicable in manufacture of the 3D integrated circuit.

A method of making 3D integrated circuits and a 3D integrated circuit structure. There is a first semiconductor structure joined to a second semiconductor structure. Each semiconductor structure includes a semiconductor wafer, a front end of the line (FEOL) wiring on the semiconductor wafer, a back end of the line (BEOL) wiring on the FEOL wiring, an insulator layer on the BEOL wiring and a metallic layer on the insulator layer. The first semiconductor structure is aligned with the second semiconductor structure such that the metallic layers of each of the semiconductor structures face each other. The metallic layers of each of the semiconductor structures are in contact with and bonded to each other by a metal to metal bond wherein the bonded metallic layers form an electrically isolated layer.

An integrated circuit structure includes first and second integrated circuit devices disposed on a interposer. Each integrated circuit device has electrostatic discharge (ESD) protection circuitry therein connected to an internal ESD bus. The first and second integrated circuit devices communicate with one another through the interposer. The interposer includes an ESD bus electrically connected to the ESD busses of the first and second integrated circuit devices for providing cross-device ESD protection for the integrated circuit devices.

A three-dimensional 3D interconnect structure with a small footprint is described, useful for connection from above to levels of circuit structures in a multi-level device. Also, an efficient and low cost method for manufacturing the 3D interconnect structure is provided.

A 3D integrated circuit device, including: a first layer including first transistors, overlaid by a second layer including second transistors, overlaid by a third layer including third transistors, where the first layer, the second layer and the third layer are each thinner than 2 microns, where the first layer includes first circuits including at least one of the first transistors, where the second layer includes second circuits including at least one of the second transistors, and where the third layer includes a charge pump circuit and control circuits to control the first circuits and the second circuits

A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer that includes active circuitry is provided, and a first portion of the first active circuitry layer wafer is removed such that a second portion of the first active circuitry layer wafer remains. Another wafer that includes active circuitry is provided, and the other wafer is bonded to the second portion of the first active circuitry layer wafer. The first active circuitry layer wafer is lower-cost than the other wafer. Also provided are a tangible computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.

A 3D integrated circuit memory array has a plurality of plane positions. Multiple bit line structures have a multiple sequences of multiple plane positions. Each sequence characterizes an order in which a bit line structure couples the plane positions to bit lines. Each bit line is coupled to at least two different plane positions to access memory cells at two or more different plane positions.

A method of designing a 3D Integrated Circuit, the method including: performing placement using a 2D placer, performing placement for at least a first strata and a second strata, and then performing routing and completing the physical design of said 3D Integrated Circuit.

A three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) (3DIC) tiers is disclosed. Related 3DICs, 3DIC processor cores, and methods are also disclosed. In embodiments disclosed herein, memory read access ports of a memory block are separated from a memory cell in different tiers of a 3DIC. 3DICs achieve higher device packing density, lower interconnect delays, and lower costs. In this manner, different supply voltages can be provided for the read access ports and the memory cell to be able to lower supply voltage for the read access ports. Static noise margins and read / write noise margins in the memory cell may be provided as a result. Providing multiple power supply rails inside a non-separated memory block that increases area can also be avoided.

The invention discloses a 3D SOI CMOS integrated device and a manufacturing method thereof, relates to the technical field of microelectronics, and mainly solves the problem of low speed of the existing 3D integrated circuits. The proposal is that an SSOI substrate and an SSGOI substrate are employed to construct two active layers of a new 3D CMOS integrated device; wherein, the lower active layer is the SSOI substrate and is made into a strained Si nMOSFET device by utilizing the characteristic of high electron mobility of a strained Si material in the SSOI substrate; the upper active layer is the SSGOI substrate and is made into a strained SiGe surface channel pMOSFET device by utilizing the characteristic of high hole mobility of the strained Si material in the SSGOI substrate; the upper active layer and the lower active layer form a 3D active layer structure by a bonding process, and are connected by an interconnection line to form the 3D CMOS integrated device with a conducting channel of 65nm to 130nm. Compared with the existing 3D integrated devices, the 3D SOI CMOS integrated device manufactured by the manufacturing method has the advantages of high speed and good performance, and can be applied to manufacturing large-scale and high-speed 3D CMOS integrated circuits.

A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer is provided. The first active circuitry layer wafer comprises a P+ portion covered by a P− layer, and the P− layer includes active circuitry. The first active circuitry layer wafer is bonded face down to an interface wafer that includes a first wiring layer, and then the P+ portion of the first active circuitry layer wafer is selectively removed with respect to the P− layer of the first active circuitry layer wafer. Next, a wiring layer is fabricated on the backside of the P− layer. Also provided are a tangible computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.

A method and apparatus for testing a scan-based 3D integrated circuit (3DIC) using time-division demultiplexing / multiplexing allowing for high-data-rate scan patterns applied at input / output pads converting into low-data-rate scan patterns applied to each embeddded module in the 3DIC. A set of 3D design guidelines is proposed to reduce the number of test times and the number of through-silicon vias (TSVs) required for both pre-bond testing and post-bond testing. The technique allows reuse of scan patterns developed for pre-bond testing of each die (layer) for post-bond testing of the whole 3DIC. It further reduces test application time without concerns for I / O pad count limit and risks for fault coverage loss.

A method is provided for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first active circuitry layer wafer is bonded to the interface wafer. Then, a first portion of the first active circuitry layer wafer is removed such that a second portion remains attached to the interface wafer. A stack structure including the interface wafer and the second portion of the first active circuitry layer wafer is bonded to a base wafer. Next, the interface wafer is thinned so as to form an interface layer, and metallizations coupled through the through-silicon vias in the interface layer to the first wiring layer are formed on the interface layer. Also provided is a tangible computer readable medium encoded with a program that comprises instructions for performing such a method.

A 3D integrated circuit memory array has a plurality of plane positions. Multiple bit line structures have a multiple sequences of multiple plane positions. Each sequence characterizes an order in which a bit line structure couples the plane positions to bit lines. Each bit line is coupled to at least two different plane positions to access memory cells at two or more different plane positions.

The invention discloses a realizng method of three-dimensional integrated circuit in the semiconductor making technique and three-dimensional integrated technical domain, which comprises the following steps: sedimenting plating seed layer on the bonding face of the first circuit disc or auxiliary disc; making the auxiliary disc as the through-hole to reduce the back to support the first layer of circuit disc and etch the disc; exposing the plating seed layer through the through-hole; using plating technique from bottom to top; adopting the plating seed layer as original; plating to fill the through-hole; making projection on the filled through-hole; adopting bonding pattern to connect the first layer of circuit disc and the second layer of circuit disc. The invention reduces the technical difficulty to realize three-dimensional integration on the silicon substrate, which has good versatility.

There is disclosed a carrier and method for handling and / or transport of a substrate, such as during processing of the substrate, for example, back-thinning. The carrier and method provide support for the substrate. The process is particularly suited to thinning of substrates for use in 3D integrated circuits. The carrier comprises: a contact surface with one or more recesses therein for trapping a volume when the contact surface is brought towards the substrate, the contact surface for supporting the substrate; a sealing surface at the periphery of the contact surface and offset from the contact surface; and the sealing member seating on the sealing surface and arranged to be compressed to form a seal to the substrate when a substrate is in contact with the contact surface, the seal sealing the trapped volume between the substrate and carrier.

An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

The invention provides a 3D (three-dimensional) IC (integrated circuit) and a manufacturing method thereof. The circuit comprises a semiconductor substrate, a semiconductor device, a silicon through hole, an interconnection structure and a diffusion trapping region, wherein the semiconductor device is formed on the upper surface of the semiconductor substrate; the silicon through hole penetrates through the semiconductor substrate and comprises an insulating layer for covering the side walls of the silicon through hole and a conducting material filled in the insulating layer; the interconnection structure is used for connecting the semiconductor device with the silicon through hole; and the diffusion trapping region is formed on the lower surface of the semiconductor substrate. The manufacturing method is applicable to manufacturing of 3D integrated circuits.

The invention discloses a distance optimizing method of through silicon via (TSV) positions in a three-dimensional (3D) integrated circuit automatic layout. The distance optimizing method has wide application to the field of design and manufacture of 3D integrated circuits. In a layout formed after initial locating of common 3D integrated circuit TSVs, the number of the TSVs is big, and distribution of the TSVs in the layout is dense, therefore a problem that the positions of the TSVs are too close occurs. When the 3D integrated circuit is manufactured and produced, manufacturers can not manufacture the layout where gaps of the TSVs are smaller than gap restrain of manufacture process. The method uses a distance method to optimize the gaps of the TSVs, an optimized layout is obtained so as to enable the gaps of the TSVs to meet process manufacture requirements, and manufacture can be finished. In the optimized TSV layout, distance of the TSVs is appropriate, working speed of the circuit can be increased, and crosstalk is reduced.