707results about How to "High hole mobility" patented technology

A structure, and method of fabrication, for high performance field effect devices is disclosed. The MOS structures include a crystalline Si body of one conductivity type, a strained SiGe layer epitaxially grown on the Si body serving as a buried channel for holes, a Si layer epitaxially grown on the SiGe layer serving as a surface channel for electrons, and a source and a drain containing an epitaxially deposited, strained SiGe of opposing conductivity type than the Si body. The SiGe source/drain forms a heterojunction and a metallurgical junction with the Si body that coincide with each other with a tolerance of less than about 10 nm, and preferably less than about 5 nm. The heterostructure source/drain is instrumental in reducing short channel effects. These structures are especially advantageous for PMOS due to increased hole mobility in the compressively strained SiGe channel. Representative embodiments include CMOS structures on bulk and on SOI.

A p-type MOSFET of a CMOS structure has a silicon-germanium alloy channel to which a longitudinal compressive stress is applied by embedded epitaxial silicon-germanium alloy source and drain regions comprising a silicon-germanium alloy having a higher concentration of germanium than the channel of the p-type MOSFET. An n-type MOSFET of the CMOS structure has a silicon-germanium alloy channel to which a longitudinal tensile stress is applied by embedded epitaxial silicon source and drain regions comprising silicon. The silicon-germanium alloy channel in the p-type MOSFET provides enhanced hole mobility, while the silicon-germanium alloy channel in the n-type MOSFET provides enhanced electron mobility, thereby providing performance improvement to both the p-type MOSFET and the n-type MOSFET.

An organic EL device comprising a cathode, an anode, and at least one organic compound layer containing an organic compound represented by formula (I):where L0 is any one of o-, p-, and m-phenylene groups which have two, three or four rings and which have a substituent with the proviso that when L0 is a phenylene group having four rings, the phenylene group may have an unsubstituted or substituted aminophenyl group somewhere therein, and at least one of R01, R02, R03 and R04 is any one of the following groups:where R1, R12, R13, R14, R15, R16 and R17 are each a substituted or unsubstituted aryl group, and r1, r2, r3 and r4 are each an integer of 0 to 5 with the proviso that r1+r2+r3+r4>=1.

P-type MOSFETs (PMOSFETs) are formed by encapsulating the gate with an insulator and depositing a germanium containing layer outside the sidewalls, then diffusing the germanium into the silicon-on-insulator layer or bulk silicon by annealing or by oxidizing to form graded embedded silicon-germanium source-drain and/or Extension (geSiGe-SDE). For SOI devices, the geSiGe-SDE is allowed to reach the buried insulator to maximize the stress in the channel of SOI devices, which is beneficial for ultra-thin SOI devices. Graded germanium profiles provide a method to optimize stress in order to enhance device performance. The geSiGe-SDE creates a compressive stress in the horizontal direction (parallel to the gate dielectric surface) and tensile stress in the vertical direction (normal to the gate dielectric surface) in the channel of the PMOSFET, therebyforming a structure that enhances PMOSFET performance.

A part of the gate of a FINFET is replaced with a stress material to apply stress to the channel of the FINFET to enhance electron and hole mobility and improve performance. The FINFET has a SiGe/Si stacked gate, and before silicidation the SiGe part of the gate is selectively etched to form a gate gap that makes the gate thin enough to be fully silicidated. After silicidation, the gate-gap is filled with a stress nitride film to create stress in the channel and enhance the performance of the FINFET.

The present invention facilitates semiconductor device fabrication and performance by providing a semiconductor device that can improve channel mobility for both N type and P type transistor devices. The semiconductor device of the present invention is fabricated on a semiconductor substrate 802 that has a first and second crystallographic orientation axes (e.g., <110>, <100>) 804 and 806. Source to drain channel regions for P type devices are formed 904 and aligned along the first crystallographic orientation axis. Source to drain channel regions for N type devices are formed 906 rotated from the channel regions of the P type devices by an offset angle so that the source to drain channel regions for the N type devices are aligned with the second crystallographic orientation axis. Subsequently, a uniaxial or biaxial tensile stress 908 is applied to the source to drain channel regions of the N type devices and a uniaxial or biaxial compressive stress 910 is applied to the source to drain channel regions of the P type devices.

An optically transparent, electrically conductive hybrid film includes a carbon nanotubes network deposited on a substrate, and a population of transparent conductive inorganic nanoparticles distributed throughout the carbon nanotubes network to provide a conductive transparent hybrid film.

A method of increasing mobility of charge carriers in a bipolar device comprises the steps of: creating compressive strain in the device to increase mobility of holes in an intrinsic base of the device; and creating tensile strain in the device to increase mobility of electrons in the intrinsic base of the device. The compressive and tensile strains are created by forming a stress layer in close proximity to the intrinsic base of the device. The stress layer is at least partially embedded in a base layer of the device, adjacent an emitter structure of the device. The stress layer has different lattice constant than the intrinsic base. Method and apparatus are described.

The invention relates to the technical field of organic photoelectric materials, and in particular, relates to an organic compound, an electronic element containing the same and an electronic device.The compound has a structure represented by a chemical formula 1', wherein one of R1, R2, R3 and R4 is a group defined in the specification, and the other three are selected from substituents such asalkyl, halogen and cyano; one of R5, R6, R7 and R8 is a group defined in the specification, the other three are selected from substituents such as alkyl, halogen and cyano, Y and Y1 are respectively and independently a group defined in the specification, and L and L1 are single bonds, aryl, heteroaryl and the like. By using the organic compound in an electronic component, the driving voltage, luminous efficiency, and life of the electronic component are improved.

The invention provides a triarylamine compound and an organic electroluminescent device thereof, and relates to the technical field of organic photoelectric materials. According to the invention, a substituted or unsubstituted 9-phenyl-fluorene group and a triarylamine group containing benzoxazole/benzothiazole/benzimidazole/benzotriazole undergoes a reaction to obtain the triarylamine compound by9-position (tertiary C) connection of fluorene. The triarylamine compound has a good hole transport capability, is high in glass transition temperature, good in thermal stability, good in film-forming property, high in refractive index and simple to synthesize, can be applied to an organic electroluminescent device to serve as a hole transport layer and/or a covering layer, can effectively solvethe problems of low luminous efficiency and short service life of the organic electroluminescent device, and has the advantages of high luminous efficiency and long service life.

The invention discloses a Spiro-OMeTAD/PbS composite hole transport layer based perovskite solar cell and a preparation method therefor. The perovskite solar cell comprises a transparent conductive substrate, an oxide electron transport layer, a perovskite solar light absorption layer, the Spiro-OMeTAD/PbS composite hole transport layer and a metal electrode. The perovskite thin film solar cell adopts a simple process; a lead sulfide thin film can be prepared by a large-area evaporation method; and the lead sulfide thin film can be inserted between the Spiro-OMeTAD and the metal electrode layer to be used as a buffer layer. The Spiro-OMeTAD/PbS composite hole transport layer based perovskite solar cell achieves a high photoelectric conversion efficiency which is as high as 15.11%; the lead sulfide, which is used as the buffer layer between the hole transport layer and the metal electrode, has higher hole mobility, and higher humidity stability and light and heat stability, so that the recombination of electron-hole pairs can be reduced; meanwhile, the stability of the cell can be improved; compared with other buffer layer materials, the lead sulfide can protect a device and improve the performance of the device as well; and therefore, a positive promotion effect is realized on the industrial development of the solar cell.

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a hexagonal crystalline phase layer having a first region and a second region, the cubic crystalline phase structure being positioned between the first region and the second region of the hexagonal crystalline phase layer. A source region and a drain region are both positioned in the Group III/V compound semiconductor material. A channel region is in the Group III/V compound semiconductor material. A gate is over the channel region. An optional backside contact can also be formed. A source contact and electrode are positioned to provide electrical contact to the source region. A drain contact and electrode are positioned to provide electrical contact to the drain region. Methods of forming transistors are also disclosed.

The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressive and tensile strain are created by applying a stress film adjacent an emitter structure of the device and atop a base film of the device. In this manner, the compressive and tensile strain are located in close proximity to an intrinsic portion of the device. A suitable material for the stress film is nitride. The emitter structure may be “T-shaped”, having a lateral portion atop an upright portion, a bottom of the upright portion forms a contact to the base film, and the lateral portion overhangs the base film.

The invention belongs to the technical field of preparation of substrate materials for semiconductor basic circuits and particularly provides a method for preparing a composite doped diamond-film substrate for a high-heat-conductivity electronic device. The method comprises the following steps of: firstly carrying out high-density diamond nucleation growth on a metal substrate or a graphite transition layer substrate, depositing an element-doped diamond film, and carrying out the growth of the diamond film to reach a required thickness; carrying out vacuum heat treatment on a diamond gradient composite substrate after demoulding for homogenizing and destressing; and carrying out double-surface grinding and polishing on the doped diamond gradient composite substrate and meeting the requirements on the surface finish quality and the thickness of a substrate for a semiconductor integrated circuit. The invention has the advantages that a boron-doped diamond film has high electron and hole mobility; a boron-undoped diamond film is taken as a substrate support of the doped diamond film; and the heat conductivity of the relatively thicker boron-undoped diamond film is five times of that of copper, thus the heat can be transferred to a radiator in time.

The invention provides novel compounds, of which the structures are represented as Formula (I), Formula (II), Formula (III) and Formula (IV), wherein Ar1-Ar6 are selected from C1-C20 aliphatic alkyl groups, C4-C30 aromatic rings, C4-C30 aromatic heterocyclic rings, C4-C30 condensed heterocyclic ring aromatics, C4-C30 arylamino or triarylamino groups or C4-C30 aryloxy groups. The compounds are used as a hole injection material, hole transmission material or fluorescence body material in organic electroluminescent devices.

The invention provides a two-dimensional conjugated polymer as shown in a formula (I). The invention also provides a polymer-containing semi-conductor blend, a preparation method of the polymer and an application of the polymer in organic photoelectric fields such as polymer solar cells and polymer field-effect tubes. The energy conversion efficiency of the two-dimensional conjugated polymer provided by the invention is greatly improved, so that the application of the two-dimensional conjugated polymer in the organic photoelectric fields is expanded.

A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or Al_xGa_1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.

A spiro [fluorene-9, 9-xanthene]-class hole transport material and application thereof are disclosed, the spiro [fluorene-9, 9-xanthene]-class hole transport material is an aromatic-amine compound using spiro [fluorene-9, 9-xanthene] as a core-shell structure, the aromatic-amine compound has one or more than 1 N nuclear structure unit, two adjacent N nuclear structure units are connected by a connecting group, the N nuclear structure unit meets the general formula F, and Rx, Ry and Rz are substitutes or connecting groups. Compared with similar products in the prior art, the spiro [fluorene-9, 9-xanthene]-class hole transport material is the aromatic-amine compound using the spiro [fluorene-9, 9-xanthene] as the core-shell structure, has higher glass transition temperature and thermal decomposition temperature, higher redox potential, and higher hole mobility and conductivity, and has great application value and broad application prospects in the field of perovskite solar cells and other organic electronic devices.