Method for preparing diamond substrate for high-heat-conductivity integrated circuit

An integrated circuit and diamond technology, which is applied in the field of preparing doped diamond film composite substrates for high thermal conductivity electronic devices, can solve the problems of unfavorable electronic device production, low diamond film strength, and inability to solve heat dissipation problems of high-power devices.

Active Publication Date: 2011-08-17
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to make the diamond film have semiconductor characteristics, it needs to be doped in the diamond film. Generally, the diamond film with doped elements is grown on the silicon substrate, but it cannot so

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0025] Example 1

[0026] Taking the plasma spray method on a molybdenum substrate as an example, the specific implementation steps of the present invention are as follows:

[0027] Molybdenum with a diameter of 60 mm is selected as the substrate, and the doping element is boron. The boron source is loaded with liquid trimethyl borate and hydrogen. The plasma spray method is used to deposit B-doped and undoped diamond films. Firstly, the molybdenum substrate is polished with diamond paste, and the molybdenum substrate is cleaned by an ultrasonic cleaner. After drying, it is placed in a vacuum chamber of plasma jet method. The distance between the anode and the substrate is 20mm, and the vacuum reaches the ultimate vacuum. The arc is ignited by passing hydrogen and argon in proportion to the ratio. Hydrogen is 7L and argon is 2.5L. The power parameters are arc current 105A and arc voltage 106V. When the substrate temperature is raised to 850℃, methane gas is introduced for nucleatio...

Example Embodiment

[0028] Example 2

[0029] Taking the plasma spray method on the graphite Ti transition layer substrate as an example, the specific implementation steps of the present invention are as follows:

[0030] A graphite Ti transition layer with a diameter of 60 mm is selected as the substrate, the doping element is boron, the boron source is loaded with liquid trimethyl borate and hydrogen is used, and the plasma spray method is used for B-doped and undoped diamond film Of deposition. Firstly, the substrate is polished with diamond paste, and the molybdenum substrate is cleaned with an ultrasonic cleaner. After drying, it is placed in a plasma jet vacuum chamber. The distance between the anode and the substrate is 40mm, and the vacuum reaches the ultimate vacuum. , In accordance with the proportion of hydrogen and argon gas to ignite the arc, hydrogen 7.5L, argon 3L, the power parameters are arc current 108A, arc voltage 104V, when the substrate temperature is raised to 870℃, methane gas...

Example Embodiment

[0031] Example 3

[0032] Taking the plasma spray method on the graphite Mo transition layer substrate as an example, the specific implementation steps of the present invention are as follows:

[0033] A graphite Mo transition layer with a diameter of 60 mm is selected as the substrate, the doping element is boron, the boron source is loaded with liquid trimethyl borate and hydrogen is used, and the plasma spray method is used for B-doped and undoped diamond film Of deposition. Firstly, the substrate is polished with diamond paste, and the molybdenum substrate is cleaned with an ultrasonic cleaner. After drying, it is placed in a plasma jet vacuum chamber. The distance between the anode and the substrate is 40mm, and the vacuum reaches the ultimate vacuum. , According to the proportion of hydrogen and argon gas to ignite the arc, hydrogen gas 7L, argon gas 2.5L, the power parameters are arc current 105A, arc voltage 106V, when the substrate temperature is raised to 850℃, methane g...

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PUM

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Abstract

The invention belongs to the technical field of preparation of substrate materials for semiconductor basic circuits and particularly provides a method for preparing a composite doped diamond-film substrate for a high-heat-conductivity electronic device. The method comprises the following steps of: firstly carrying out high-density diamond nucleation growth on a metal substrate or a graphite transition layer substrate, depositing an element-doped diamond film, and carrying out the growth of the diamond film to reach a required thickness; carrying out vacuum heat treatment on a diamond gradient composite substrate after demoulding for homogenizing and destressing; and carrying out double-surface grinding and polishing on the doped diamond gradient composite substrate and meeting the requirements on the surface finish quality and the thickness of a substrate for a semiconductor integrated circuit. The invention has the advantages that a boron-doped diamond film has high electron and hole mobility; a boron-undoped diamond film is taken as a substrate support of the doped diamond film; and the heat conductivity of the relatively thicker boron-undoped diamond film is five times of that of copper, thus the heat can be transferred to a radiator in time.

Description

technical field [0001] The invention belongs to the technical field of base material preparation for semiconductor basic circuits; in particular, it provides a method for preparing a doped diamond film composite substrate for high thermal conductivity electronic devices. Background technique [0002] CVD diamond film, which can be attached to the surface of the substrate in the form of a film, or can be self-supporting to form a film. Diamond has many unique and excellent properties, it is the hardest material (104kg / mm 2 ), but also has the highest strength, elastic modulus and the largest thermal conductivity (20W / cm K). Electrically, it is a very good insulating material (resistivity 10 11 ~10 16 Ωcm), has a very wide forbidden band (5.5eV), and the mobility of carriers is high (electron: 1800cm 2 / Vs, cavity: 1600cm 2 / Vs), the saturation velocity of both electrons and holes is high, and the dielectric strength is very high (10 7 V / cm). Diamond doped with Group II...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/04C30B25/02C30B29/04
Inventor 李成明刘金龙张营营陈良贤黑立富吕反修
Owner UNIV OF SCI & TECH BEIJING
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