206 results about "Boron doped diamond" patented technology

A conductive boron doped nanocrystalline diamond is described. The boron doped diamond has a conductivity which uses the boron in the crystals as a charge carrier. The diamond is particularly useful for electrochemical electrodes in oxidation-reduction reactions and decontamination of aqueous solutions.

A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm³, or a combination of such characteristics.

The invention discloses a preparation method of graphene on a diamond (111) surface, which mainly comprises the steps of: (1) growing an undoped diamond transition layer on a substrate: placing the substrate on a substrate support of a cavity of a hot filament chemical vapor deposition system, and growing a diamond transition layer; (2) growing a B-doped diamond film on the diamond transition layer; and (3) forming the grapheme through annealing and self-organization. By the preparation method, larger-size samples can be prepared, and the size is from nano scale to micron scale even millimeter scale. The method for preparing the graphene through self-organization, and is easier to realize; the grown grapheme has higher area controllability, can reach the micron scale or larger size which cannot be realized by most existing methods. In addition, the diamond has multiple excellent characteristics, and the boron-doped diamond substrate is not symmetrical, therefore, the graphene formed on the boron-doped diamond substrate can easily generate an energy gap, which is more beneficial to application of the graphene to devices.

The invention discloses a preparation method of a boron-doped diamond (BDD) film electrode taking porous titanium as a matrix. The preparation method is characterized in that the titanium matrix is a porous titanium material with the porosity of 20-50%, hot filament chemical vapor deposition equipment is adopted, and a porous titanium base BDD electrode is prepared through chemical vapor deposition by using a second-order boron concentration control mode. By adopting the method, the generation capacity of TiC is controlled by adjusting boron source concentrations of different stages during chemical vapor deposition, namely the formation of TiC is inhibited by using high boron doping at the initial stage to improve the bonding force between a base and a film, and the boron source concentration is reduced in the later period of reaction to perform low boron doping. The porous titanium base BDD electrode prepared by the method disclosed by the invention is uniform and compact in diamond grain, and the porous titanium matrix is completely covered by a diamond film, so that the electrode has good stability and a relatively wide potential window.

A beam (32) of a probe bead (30) having a uniform thickness is formed by using a silicon layer (64) of a SOI substrate. The beam of the probe head is formed by growing a boron-doped diamond and non-doped diamond on a processing substrate, respectively.

The invention relates to a production method of titanium-based boron-doping diamond coating electrode, the invention is characterized in that the method is realized by sputtering a transition layer on a substrate material and then depositing the boron-doping diamond coating by a CVD method. The electrode is composed of a substrate (1), a transition layer (2) and a diamond layer (3), and is characterized in that the substrate is titanium, the transition layer is niobium or tantalum through magnetron sputtering, and the boron-doping concentration used in the CVD technology is 6000 - 10000 ppm. The invention provides a production method of BDD electrode with long service life and high electrolytic efficiency, and has the advantages of low cost and high repeatability.

The invention relates to an artificial antibody type titanium dioxide (TiO2)/ boron-doped diamond (BDD) membrane electrode and a preparation method thereof, the electrode is in p-n heterostructure, the electrode uses boron-doped diamond (BDD) as a substrate, uniform dense fusiform TiO2 particles are on the surface of the BDD, the particle size of the TiO2 particles is 50-100nm, a modification layer with a thickness of 5 to 10 mum is formed by the densely covered TiO2 particles; the preparation method of the artificial antibody type titanium dioxide (TiO2)/ boron-doped diamond (BDD) membrane electrode is as follows: using of the boron-doped diamond as the substrate, low temperature liquid phase deposition of TiO2 with a target pollutant molecular imprinting on the surface of the substrate, and removal of target pollutant molecules. Compared with the prior art, the artificial antibody type titanium dioxide (TiO2)/ boron-doped diamond (BDD) membrane electrode prepared by the method both has the p-n heterostructure and target pollutant molecular recognition ability, has excellent photoelectrocatalytic integrative performance and high selectivity degradation ability, has the advantages of simple preparation process, can be effectively used for removal of organic pollutants with low concentration, low tendency to biochemistry and high toxicity, and has extensive economic and social benefits.

The invention discloses a method for treating organic wastewater by a photoelectric combined technique. A photocatalyst and three-dimensional electrodes are synergically utilized to treat organic wastewater, wherein the main anode is a boron-doped diamond film electrode, the main cathode is stainless steel, and the filled particle electrode material is composed of carbon nano fibers and calcium alginate microspheres. The catalyst generates holes with strong oxidizing property under the light irradiation; the high-catalytic-activity three-dimensional electrode materials are combined to generate higher oxygen overpotential and generate active oxygen substances (such as hydroxy free radical -OH, H2O2, -OOH, -O and the like); C-N, N-N, N=O and other bonds in toxic and nondegradable wastewater containing unsymmetrical dimethylhydrazine, nitrosodimethylamine and the like are ruptured and efficiently degraded into carbon dioxide, water, ammonium salt NH4<+> and the like; and COD (chemical oxygen demand) in the wastewater is greatly removed under neutral room-temperature conditions. The method has the advantages of high efficiency of combined oxidation treatment and no secondary pollution, and is an efficient method for treating nondegradable wastewater.

The invention relates to a microwave electro-Fenton method for processing organic wastewater and a device thereof. Under the action of microwave, a boron-doped diamond film electrode is used as an anode material for electrochemical degradation processing, and organic pollutant containing wastewater is processed efficiently by an electrochemical method. According to the invention, the boron-doped diamond film electrode is utilized to continuously generate hydroxyl radical with strong oxidation capacity in a wastewater system containing divalent iron ions, and in-situ activation of the boron-doped diamond film electrode is carried out by means of thermal effect and non-thermal effect of microwave so as to increase activity of the electrode and promote mass transfer process during the degradation process of organic pollutants. Therefore, the oxidation capacity of the electro-Fenton reaction is enhanced, and mineralization reaction rate is effectively accelerated. In comparison with traditional Fenton and electro-Fenton methods, the processing effect of the microwave electro-Fenton method provided by the invention is effectively enhanced. The method provided by the invention is simple to operate, has a good effect of processing organic wastewater, and has a wide application prospect as well as development potential.

The present invention provides a method for producing electrolyzed water composition for use in cleaning and disinfecting of an object. The method comprises preparing an electrolyte solution comprising water, at least one carbonate salt selected from: alkali metal carbonate salts, and at least one chloride salt selected from: alkali metal chloride salts and/or alkali earth metal chloride salts. The method further comprises introducing the aqueous electrolyte solution into an electrolytic cell comprising a plurality of boron-doped diamond electrodes. The method further comprises operating a power supply to apply a predetermined voltage to the electrolyte solution to produce an electrolyzed water composition comprising a plurality of active molecular and ionic species with antimicrobial activity.

A radiation detector comprises a substrate of diamond material and at least one electrode formed at a surface of the substrate. The electrode comprises electrically conductive material deposited in a cavity in the surface of the substrate so that at least a portion of the material of the electrode is below the surface of the substrate. The cavity will typically be an elongate trench or channel in which electrically conductive material such as boron-doped diamond is deposited. In some embodiments, at least two electrodes are located adjacent to one another at the surface of the substrate. In other embodiments, the device has a plurality of electrodes, at least one of which is located at a first surface and at least one of which is located at an opposed second surface of the substrate. In the latter case, an electrode at one surface of the substrate can be connected to an electrode at the opposed surface of the substrate by means of a conductive via, which consists of a through-hole filled or coated with conductive material. Typically, the electrodes are arranged in an interdigitated configuration, each electrode having a plurality of elongate electrode elements. Each such electrode element extends parallel to at least one adjacent electrode element of another electrode.

The invention relates to a preparation method of boron dope diamond superconducting material, including the following steps: traditional synthetic boron dope diamond technology is used for carrying out pretreatment on an internal cavity body, a clean substrate is placed on the substrate pad of the inner cavity after pretreatment, and the traditional hot-filament chemical vapor deposition method is used for depositing a diamond film transition layer; the deposit growth conditions are as follows: the voltage bias applied on the substrate is zero, reaction gases of methane and hydrogen are led in through two paths, the volume ratio of the two paths of gases is (2-10): 100, the temperature of the substrate is in the range from 800 DEG to 1000 DEG by adjusting the distance between the substrate and the filament, the gas pressure is 20-60 Torr, and the growth time lasts 0.5-1.5 hours; the growth conditions of compositing the diamond film transition layer are remained, and the boron dope diamond superconducting material is continuously grown for at least 3 hours to obtain the boron dope diamond superconducting material. The method not only has the advantages of low cost and high flexibility but also obtains the boron dope diamond superconducting material with higher carrier concentration and higher superconducting transition temperature.

The invention provides an aptamer sensor for detecting bisphenol A and a preparation method of the aptamer sensor and belongs to the technical field of electrochemical biosensors. The bisphenol A aptamer sensor is characterized in that gold nanoparticles (2) are deposited on a boron-doped diamond film (1); an aptamer (2) is self-assembled on the gold nanoparticles; mercaptoethanol (4) occupies a blank site left by the aptamer on the gold nanoparticles. A gold film is deposited on the boron-doped diamond film and is annealed in a tubular furnace to obtain the gold nanoparticles; the preparation of the bisphenol A aptamer sensor is finished by utilizing self-assembling of the aptamer and the mercaptoethanol. According to the aptamer sensor provided by the invention, the detection capability of the bisphenol A is easy to improve by selecting boron-doped diamond and taking a reasonable structure design; the novel bisphenol A aptamer sensor has the advantages of high sensitivity, high specificity, good repeatability, low detection limit, rapidness in detection, high efficiency, high stability, simple preparation process and low cost.

The invention discloses a diamond-based electrode material of a seawater salinity sensor. A diamond thin film material and a diamond composite thin film material are used as the electrode material of the seawater salinity sensor. The diamond thin film material comprises a boron-doped polycrystalline diamond thin film material body and a boron-doped nano diamond thin film material body. The diamond composite thin film material comprises a diamond and graphite composite thin film material body, a diamond and carbide composite thin film material body, boron-doped diamond and amorphous carbon composite thin film material body and a diamond thin film material body with the surface being decorated or modified through metal, or organic matters or inorganic molecules. The electrode material has the advantages of wide electrochemical window, low background current, high corrosion resistance, strong biological adhesion prevention capacity, high mechanical strength, high stability of chemical performance, more functional ways, good reprocessability, high biocompatibility and the like. The measurement precision and reliability of the seawater salinity sensor are further improved, and the service life of the seawater salinity sensor is prolonged.

A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.