206 results about "Boron doped diamond" patented technology

The invention discloses a high-specific-surface-area boron-doped diamond (BDD) electrode which comprises an electrode substrate. A boron-doped diamond layer is arranged on the surface of the electrode substrate. Or, a transition layer is arranged on the surface of the substrate, and then a boron-doped diamond layer is arranged on the surface of the transition layer. Metal particles are distributed in the diamond layer, and tiny holes and / or pointed cones are distributed on the surface of the diamond layer. Compared with a traditional plate electrode, the boron-doped diamond electrode contains a large number of tiny holes and pointed cones and has the extremely high specific surface area, and the large current intensity is provided through the low current intensity; and meanwhile, due to the different electrode configurations of the substrate and modification of surface graphene and / or carbon nano tubs (CNT), the mass transfer process can be greatly improved, the current efficiency and the electrochemical property are greatly improved, and the BDD electrode with high electrocatalytic activity and high using efficiency is prepared. The electrode can be widely applied in the fields of electrochemical wastewater purification treatment, electrochemical biosensors, strong oxidant electrochemical synthesis, electrochemical detection and the like.

A conductive boron doped nanocrystalline diamond is described. The boron doped diamond has a conductivity which uses the boron in the crystals as a charge carrier. The diamond is particularly useful for electrochemical electrodes in oxidation-reduction reactions and decontamination of aqueous solutions.

A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm3, or a combination of such characteristics.

The invention discloses a preparation method of graphene on a diamond (111) surface, which mainly comprises the steps of: (1) growing an undoped diamond transition layer on a substrate: placing the substrate on a substrate support of a cavity of a hot filament chemical vapor deposition system, and growing a diamond transition layer; (2) growing a B-doped diamond film on the diamond transition layer; and (3) forming the grapheme through annealing and self-organization. By the preparation method, larger-size samples can be prepared, and the size is from nano scale to micron scale even millimeter scale. The method for preparing the graphene through self-organization, and is easier to realize; the grown grapheme has higher area controllability, can reach the micron scale or larger size which cannot be realized by most existing methods. In addition, the diamond has multiple excellent characteristics, and the boron-doped diamond substrate is not symmetrical, therefore, the graphene formed on the boron-doped diamond substrate can easily generate an energy gap, which is more beneficial to application of the graphene to devices.

The invention discloses a preparation method of a boron-doped diamond (BDD) film electrode taking porous titanium as a matrix. The preparation method is characterized in that the titanium matrix is a porous titanium material with the porosity of 20-50%, hot filament chemical vapor deposition equipment is adopted, and a porous titanium base BDD electrode is prepared through chemical vapor deposition by using a second-order boron concentration control mode. By adopting the method, the generation capacity of TiC is controlled by adjusting boron source concentrations of different stages during chemical vapor deposition, namely the formation of TiC is inhibited by using high boron doping at the initial stage to improve the bonding force between a base and a film, and the boron source concentration is reduced in the later period of reaction to perform low boron doping. The porous titanium base BDD electrode prepared by the method disclosed by the invention is uniform and compact in diamond grain, and the porous titanium matrix is completely covered by a diamond film, so that the electrode has good stability and a relatively wide potential window.

A beam (32) of a probe bead (30) having a uniform thickness is formed by using a silicon layer (64) of a SOI substrate. The beam of the probe head is formed by growing a boron-doped diamond and non-doped diamond on a processing substrate, respectively.

The invention relates to a boron-doped diamond micro-nano material and a preparation method thereof, belonging to the technical field of micro-nano materials. The boron-doped diamond micro-nano material with a columnar array structure, provided by the invention, is prepared on a silicon substrate and is characterized in that the silicon substrate is of a columnar array structure formed on siliconby adopting a photoetching technology, wherein the height of a single column is 5-20 mum, the diameter of the column is 1-10 mum, and the distance from one column to the other column is 2-10 mum. Thepreparation method comprises the following steps of: firstly, ultrasonically inoculating a diamond seed on the silicon substrate; then forming a boron-doped diamond film with the thickness of 0.5-2 mum by adopting a microwave plasma chemical vapor deposition method; and forming the ordered columnar array structure because the boron-doped diamond columns are mutually parallel in the axial direction, wherein the height of a single boron-doped diamond column is 5.5-22 mum, the diameter of the single boron-doped diamond column is 2-14 mum, and the distance from one boron-doped diamond column to the other boron-doped diamond column is 0.4-8 mum. The boron-doped diamond micro-nano material provided by the invention has large specific surface area and can be used on the aspects such as electrochemistry detection and the like.

A conductive boron doped nanocrystalline diamond is described. The boron doped diamond has a conductivity which uses the boron in the crystals as a charge carrier. The diamond is particularly useful for electrochemical electrodes in oxidation-reduction reactions and decontamination of aqueous solutions.

The invention relates to a production method of titanium-based boron-doping diamond coating electrode, the invention is characterized in that the method is realized by sputtering a transition layer on a substrate material and then depositing the boron-doping diamond coating by a CVD method. The electrode is composed of a substrate (1), a transition layer (2) and a diamond layer (3), and is characterized in that the substrate is titanium, the transition layer is niobium or tantalum through magnetron sputtering, and the boron-doping concentration used in the CVD technology is 6000 - 10000 ppm. The invention provides a production method of BDD electrode with long service life and high electrolytic efficiency, and has the advantages of low cost and high repeatability.

The invention relates to a device and a method for measuring the chemical oxygen demand in water based on flowing injection sampling feeding, which belongs to the technical field of environment monitoring. The measuring device is composed of a flowing injection sampler feeder, a three-electrode system electrochemical circulation detecting pool and an electrochemical working station. The invention is characterized in that a working electrode of the electrochemical circulation detecting pool is a boron-doped diamond film electrode and is fixed on an inlet channel by a fastening bolt and is lined with a lock ring. The inlet channel, a reference electrode mounting channel and an outlet channel enlightened on an insulating, hard and corrosion-resistant pool body are mutually communicated. When in measurement, the pH value of a carrier liquid is 3 to 10 with a concentration of 0.05 to 0.5 mol / l. When the reference electrode adopts a saturated calomel electrode or an Ag / AgCl electrode, a positive voltage applied on the working electrode of the boron-doped diamond film electrode is 2.2 to 3.2V. The invention realizes the fast and accurate measurement of COD with no pollution.

The invention discloses an electrochemical sensor used for instantly monitoring and detecting the water biotoxicity. The electrochemical sensor comprises a work electrode, a counter electrode, a reference electrode and a electrolytic cell; the work electrode is a polymer fixed microbial electrode, and the polymer fixed microbial electrode comprises an electrode and a polymer and bacteria mixed layer coated outside the electrode; and the material of the above polymer is gelatin or chitosan, the above bacteria comprise Escherichia coli and / or yeast, and the electrode is a glassy carbon electrode, a gold electrode, a platinum electrode or a boron-doped diamond film electrode. The invention also discloses an apparatus of the electrochemical sensor used for instantly monitoring and detecting the water biotoxicity. The electrochemical sensor can instantly monitor the water biotoxicity change and detect the water biotoxicity value, can realize instant, online and continuous detection, and has the characteristics of high analysis sensitivity, low cost, simple operation, portability and the like.

Method for electrochemically detecting different oxidant and halide anion species in a sample. According to one embodiment, the method uses a sensor including a boron-doped diamond working electrode, a platinum mesh counter electrode, a silver / silver chloride reference electrode, a potentiostat coupled to the three electrodes, and a computer coupled to the potentiostat. The sensor measures current resulting from differential pulse non-stripping voltammetry, thereby enabling different oxidants and halide anions from a plurality of such species to be detected by distinct responses. Peaks in the current signal result at characteristic voltages when a species is oxidized to a higher oxidation state, and the concentration of a particular species is determined by the magnitude of the current peak. The sensor response time is rapid and shows high sensitivity and selectivity for oxidants and halide anions. The sensor may be a hand-held or in-line device and may be used in a feedback-control system.

The invention relates to an artificial antibody type titanium dioxide (TiO2) / boron-doped diamond (BDD) membrane electrode and a preparation method thereof, the electrode is in p-n heterostructure, the electrode uses boron-doped diamond (BDD) as a substrate, uniform dense fusiform TiO2 particles are on the surface of the BDD, the particle size of the TiO2 particles is 50-100nm, a modification layer with a thickness of 5 to 10 mum is formed by the densely covered TiO2 particles; the preparation method of the artificial antibody type titanium dioxide (TiO2) / boron-doped diamond (BDD) membrane electrode is as follows: using of the boron-doped diamond as the substrate, low temperature liquid phase deposition of TiO2 with a target pollutant molecular imprinting on the surface of the substrate, and removal of target pollutant molecules. Compared with the prior art, the artificial antibody type titanium dioxide (TiO2) / boron-doped diamond (BDD) membrane electrode prepared by the method both has the p-n heterostructure and target pollutant molecular recognition ability, has excellent photoelectrocatalytic integrative performance and high selectivity degradation ability, has the advantages of simple preparation process, can be effectively used for removal of organic pollutants with low concentration, low tendency to biochemistry and high toxicity, and has extensive economic and social benefits.

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1 / 2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 μm / h.

The electrochemical analysis device and its application of the diamond membrane electrode of the nanometer mixed with the boron are used to detect the heavy metal ion with high sensitivity. It includes the electrolysis, the working station and data collecting and controlling system. The electrolysis system is made up of the electrolysis pool with the single room structure, the electrode frame and the working electrode fixed on the electrode frame, the assistant electrode, the reference electrode. The working electrode is the diamond membrane electrode of the nanometer mixed with the boron. The three electrodes are connected with the electrochemical analyzer by the electrode line. The data collecting and controlling system is the computer installed with the electrochemical analyzer. The device has avoided using the electrode containing the hydrargyrum and improved the detection sensitivity, the detection limit can reach 10-9mol / L and it has good repeatability. The detection process does not need to remove oxygen by giving nitrogen; also it can reach the renovation on the electrode surface. The invention can detect many trace metal ion in sample at the same time.

The invention relates to a system and a method for washing, cleaning, disinfecting and sanitizing laundry using electrolyte solution containing mixed oxidants generated in-situ using electrochemical reaction. More particularly the present invention relates to a system and a method for washing, cleaning, disinfecting and sanitizing laundry at a pH between 6.5 to 10.5 and at a temperature below 50° C. using in-situ mixed oxidants generated by passing electrolyte solution through electrolytic cell having boron-doped diamond electrode.

The invention relates to a microwave electro-Fenton method for processing organic wastewater and a device thereof. Under the action of microwave, a boron-doped diamond film electrode is used as an anode material for electrochemical degradation processing, and organic pollutant containing wastewater is processed efficiently by an electrochemical method. According to the invention, the boron-doped diamond film electrode is utilized to continuously generate hydroxyl radical with strong oxidation capacity in a wastewater system containing divalent iron ions, and in-situ activation of the boron-doped diamond film electrode is carried out by means of thermal effect and non-thermal effect of microwave so as to increase activity of the electrode and promote mass transfer process during the degradation process of organic pollutants. Therefore, the oxidation capacity of the electro-Fenton reaction is enhanced, and mineralization reaction rate is effectively accelerated. In comparison with traditional Fenton and electro-Fenton methods, the processing effect of the microwave electro-Fenton method provided by the invention is effectively enhanced. The method provided by the invention is simple to operate, has a good effect of processing organic wastewater, and has a wide application prospect as well as development potential.

The invention relates to the technical field of electrochemistry and relates to a method for preparing an organic pollutant-degrading electrode material. The prepared electrode material for degrading the organic pollutant CO has a cladding structure in which a titanium matrix, a tantalum interlayer and a diamond film are clad in sequence, wherein the surface of the titanium matrix is clad with the tantalum interlayer which is in closed fit with the matrix; the boron-doped diamond film is deposited on the outside of the tantalum interlayer; the titanium matrix has a purity mass percentage of no less than 99 percent and the thickness of the composite tantalum interlayer is 1 mu m so as to protect the titanium matrix, restrain the growth of titanium carbide (TiC) and prolong the service life of the electrode; and the resisitivity of the boron-doped diamond film is 10<9> to 10<12> omega.cm, and a conductive diamond film electrode is prepared by controlling the doping amount of boron. The method has the advantages that: the process is simple, safe and reliable; the prepared electrode material has high cost performance, a wide potential window and a high degradation effect; the diamond film is not easy to drop in an electrolytic process by settling the tantalum interlayer; and the diamond film electrode has high stability.

A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm3, or a combination of such characteristics.

The present invention provides a method for producing electrolyzed water composition for use in cleaning and disinfecting of an object. The method comprises preparing an electrolyte solution comprising water, at least one carbonate salt selected from: alkali metal carbonate salts, and at least one chloride salt selected from: alkali metal chloride salts and / or alkali earth metal chloride salts. The method further comprises introducing the aqueous electrolyte solution into an electrolytic cell comprising a plurality of boron-doped diamond electrodes. The method further comprises operating a power supply to apply a predetermined voltage to the electrolyte solution to produce an electrolyzed water composition comprising a plurality of active molecular and ionic species with antimicrobial activity.

The invention discloses a method and a device for detecting chemical oxygen demand of a water body. The method comprises the following steps: applying 2.5V constant potential relative to a reference electrode to a boron-doped diamond film detection electrode as a working electrode by controlling an electrochemistry workstation; injecting certain volume of a sample to be detected into a backgroundsolution under a magnetic stirring condition; recording a current signal response of the working electrode acquired by the electrochemistry workstation in real-time; and calculating the chemical oxygen demand of the detected water body through current signals. The electrochemical detection method by the boron-doped diamond film detection electrode has the detection result in excellent comparable property compared with a national standard method, has high detection accuracy, wide the range without secondary pollution, and short electrode response time, ,and can meet the timely, quick and onlinerequirement in detecting the current environment. Compared with Pbo2 / Ti adopted in the current commercialized instrument, the detection signals have nearly one order of magnitude of predominance under the respective optimal use condition.

A radiation detector comprises a substrate of diamond material and at least one electrode formed at a surface of the substrate. The electrode comprises electrically conductive material deposited in a cavity in the surface of the substrate so that at least a portion of the material of the electrode is below the surface of the substrate. The cavity will typically be an elongate trench or channel in which electrically conductive material such as boron-doped diamond is deposited. In some embodiments, at least two electrodes are located adjacent to one another at the surface of the substrate. In other embodiments, the device has a plurality of electrodes, at least one of which is located at a first surface and at least one of which is located at an opposed second surface of the substrate. In the latter case, an electrode at one surface of the substrate can be connected to an electrode at the opposed surface of the substrate by means of a conductive via, which consists of a through-hole filled or coated with conductive material. Typically, the electrodes are arranged in an interdigitated configuration, each electrode having a plurality of elongate electrode elements. Each such electrode element extends parallel to at least one adjacent electrode element of another electrode.

The invention relates to a preparation method of boron dope diamond superconducting material, including the following steps: traditional synthetic boron dope diamond technology is used for carrying out pretreatment on an internal cavity body, a clean substrate is placed on the substrate pad of the inner cavity after pretreatment, and the traditional hot-filament chemical vapor deposition method is used for depositing a diamond film transition layer; the deposit growth conditions are as follows: the voltage bias applied on the substrate is zero, reaction gases of methane and hydrogen are led in through two paths, the volume ratio of the two paths of gases is (2-10): 100, the temperature of the substrate is in the range from 800 DEG to 1000 DEG by adjusting the distance between the substrate and the filament, the gas pressure is 20-60 Torr, and the growth time lasts 0.5-1.5 hours; the growth conditions of compositing the diamond film transition layer are remained, and the boron dope diamond superconducting material is continuously grown for at least 3 hours to obtain the boron dope diamond superconducting material. The method not only has the advantages of low cost and high flexibility but also obtains the boron dope diamond superconducting material with higher carrier concentration and higher superconducting transition temperature.

The invention provides an aptamer sensor for detecting bisphenol A and a preparation method of the aptamer sensor and belongs to the technical field of electrochemical biosensors. The bisphenol A aptamer sensor is characterized in that gold nanoparticles (2) are deposited on a boron-doped diamond film (1); an aptamer (2) is self-assembled on the gold nanoparticles; mercaptoethanol (4) occupies a blank site left by the aptamer on the gold nanoparticles. A gold film is deposited on the boron-doped diamond film and is annealed in a tubular furnace to obtain the gold nanoparticles; the preparation of the bisphenol A aptamer sensor is finished by utilizing self-assembling of the aptamer and the mercaptoethanol. According to the aptamer sensor provided by the invention, the detection capability of the bisphenol A is easy to improve by selecting boron-doped diamond and taking a reasonable structure design; the novel bisphenol A aptamer sensor has the advantages of high sensitivity, high specificity, good repeatability, low detection limit, rapidness in detection, high efficiency, high stability, simple preparation process and low cost.

The invention discloses a diamond-based electrode material of a seawater salinity sensor. A diamond thin film material and a diamond composite thin film material are used as the electrode material of the seawater salinity sensor. The diamond thin film material comprises a boron-doped polycrystalline diamond thin film material body and a boron-doped nano diamond thin film material body. The diamond composite thin film material comprises a diamond and graphite composite thin film material body, a diamond and carbide composite thin film material body, boron-doped diamond and amorphous carbon composite thin film material body and a diamond thin film material body with the surface being decorated or modified through metal, or organic matters or inorganic molecules. The electrode material has the advantages of wide electrochemical window, low background current, high corrosion resistance, strong biological adhesion prevention capacity, high mechanical strength, high stability of chemical performance, more functional ways, good reprocessability, high biocompatibility and the like. The measurement precision and reliability of the seawater salinity sensor are further improved, and the service life of the seawater salinity sensor is prolonged.

A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.

The invention relates to membrane electrodes of electrolysis type ozone generators and provides a membrane electrode of a membrane electrode low-voltage electrolysis type ozone generator and a manufacturing method for the positive and negative electrodes of the membrane electrode low-voltage electrolysis type ozone generator. According to the invention, boron-doped diamond with high electrocatalytic activity, high corrosion resistance and no secondary pollution is used as a positive electrode catalyst; then the boron-doped diamond is directly deposited on a porous titanium plate by using a vapor deposition method; and the porous titanium with the deposited boron-doped diamond and a polymer proton exchange membrane are subjected to hot pressing so as to form a positive electrode structure in which the porous titanium, the positive electrode catalyst and the polymer proton exchange membrane are integrated into one. Compared with the prior art, the positive electrode structure prepared in the invention is simple to prepare and convenient to assembly and can be produced in batch; moreover, a boron-doped diamond film deposited on the surface of the porous titanium plate has a porous structure, so water permeation and air permeation performances are effectively improved, the phenomena like decrease of the performance of the catalyst and rise of groove pressure and temperature caused by unsmooth water permeation and air permeation are avoided, the service life of the membrane electrode is improved, and long-term stable operation of the membrane electrode electrolysis type ozone generator is guaranteed.

The invention provides a boron doped diamond electrode. The boron doped diamond electrode comprises an electrode substrate, transition layers and boron doped diamond film layers; the transition layersare arranged on one side or the two sides of the electrode substrate; the boron doped diamond film layers are arranged on the transition layers; the transition layers are made of one or more of titanium diboride, niobium diboride, tantalum diboride and wolfram diboride; and the electrode substrate is made of titanium, niobium, tantalum or wolfram. According to the boron doped diamond electrode, materials such as the titanium diboride are used to form the transition layers between the electrode substrate and boron doped diamond films, so that a loose carbide layer is effectively prevented frombeing formed on the surface of a metal substrate, binding force between the boron doped diamond films and the substrate is increased, and the boron doped diamond films are high in quality, are denseand have no holes; the boron doped diamond electrode is used for treating an anode of high concentrated organic wastewater by an electrochemical advanced oxidation method; the corrosion resistance ishigh; the working life of the electrode is long; and the treatment efficiency is high. The invention further provides a preparation method of the boron doped diamond electrode.

The invention relates to a boron-doped diamond film material on the surface of graphite and a preparation method thereof. The boron-doped diamond film material on the surface of the graphite is formed in the mode that a metal tungsten film is formed on the surface of a graphite basal body through hot filament chemical vapor deposition to serve as a middle transition layer, and then a boron-doped diamond film is formed on the metal tungsten film through hot filament chemical vapor deposition. The preparation method includes the steps that the graphite basal body is placed in a hot filament plasma chemical vapor deposition reaction chamber, and a hot filament is powered on to be 1200-1400 DEG C after the reaction chamber is vacuumized; then, carbonyl tungsten steam is introduced, so that the metal tungsten film is discomposed and deposited from carbonyl tungsten steam molecules on the surface of the graphite basal body to serve as a middle layer; a filament power source is adjusted to increase the temperature of a filament to 2100-2300 DEG C, methane, borane and hydrogen are introduced in the reaction chamber, and a diamond film grows on the surface of the deposited tungsten layer. The graphite basal body does not need to be transferred and continuously grow in the original position in the same device. The method is efficient and simple, cost is low, and the high quality of prepared films can be guaranteed.