Boron-doped diamond film material on surface of graphite and preparation method thereof

Abstract

The invention relates to a boron-doped diamond film material on the surface of graphite and a preparation method thereof. The boron-doped diamond film material on the surface of the graphite is formed in the mode that a metal tungsten film is formed on the surface of a graphite basal body through hot filament chemical vapor deposition to serve as a middle transition layer, and then a boron-doped diamond film is formed on the metal tungsten film through hot filament chemical vapor deposition. The preparation method includes the steps that the graphite basal body is placed in a hot filament plasma chemical vapor deposition reaction chamber, and a hot filament is powered on to be 1200-1400 DEG C after the reaction chamber is vacuumized; then, carbonyl tungsten steam is introduced, so that the metal tungsten film is discomposed and deposited from carbonyl tungsten steam molecules on the surface of the graphite basal body to serve as a middle layer; a filament power source is adjusted to increase the temperature of a filament to 2100-2300 DEG C, methane, borane and hydrogen are introduced in the reaction chamber, and a diamond film grows on the surface of the deposited tungsten layer. The graphite basal body does not need to be transferred and continuously grow in the original position in the same device. The method is efficient and simple, cost is low, and the high quality of prepared films can be guaranteed.

Description

technical field [0001] The invention relates to the modification of traditional graphite electrochemical electrode materials. A high-performance graphite / metal / boron-doped diamond multilayer composite material is obtained by using a special preparation method, and the performance of graphite as an electrochemical electrode is greatly improved. Background technique [0002] With the rapid development of petrochemical, pharmaceutical, pesticide and dye industries, the number and types of refractory organic compounds in industrial wastewater are increasing day by day, especially the high-concentration aromatic compounds contained in them, which are "three-caused" substances. Physical, chemical and biological degradation methods are difficult to remove directly. The electrochemical advanced oxidation method is directly oxidized and removed on the surface of the electrode because the oxidant is derived from the intermediate product or target of water molecule electrolysis, and th...

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Problems solved by technology

[0007] However, the metal intermediate transition layer on the surface of graphite substrate is basically prepared by physical vapor deposition technology (such as sputtering, ion plating, electron beam evaporation), which not only requires thin film deposition equipment other than diamond coating growth, but also has complex procedures, which require physical vapor deposition. After the growth of the metal transition layer on the surface of the graphite substrate is completed in the system, it is taken out and placed in a chemical vapor deposition system (mainly a hot wire chemical vapor deposition system) for the preparation of a diamond film. The time period is long, the operation is complicated and troublesome, and the substrate transfer process To be exposed to the atmosphere, surface contamination will also affect the quality of subsequent deposited diamond films to a certain extent

Therefore, there are obvious weaknesses and defects in the existing technology of preparing diamond coating on the surface of graphite substrate, which greatly limits the application of this new material as an electrochemical electrode, and urgently needs to be improved.

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