154 results about "Graphite substrate" patented technology

The preparation method comprises the following steps: brushing ultrahigh-temperature ceramic oxide slurry on the surface of a graphite base material, carrying out first heat treatment to obtain a porous transition layer, then brushing ultrahigh-temperature carbide slurry on the surface of the porous transition layer, and carrying out second heat treatment to obtain the high-temperature-stable and corrosion-resistant multi-layer composite ceramic coating on the surface of the graphite base material. The preparation method comprises the following steps: performing primary heat treatment on the surface of an ultra-high-temperature carbide layer, drying to obtain the ultra-high-temperature carbide layer, performing roughening treatment on the surface of the ultra-high-temperature carbide layer by adopting ultra-high-temperature carbide slurry, performing secondary heat treatment to obtain a rough carbide layer, and performing point pressure on the surface of the rough carbide layer by adopting metal carbide ceramic mixed slurry to obtain dense bulges; according to the method disclosed by the invention, not only can the bonding firmness among the layers be remarkably improved, but also the situation that the graphite base material and the surface protection layer react at high temperature, so that the coating fails and falls off is effectively avoided, the use limit of the protection layer is further enhanced, and the method has a wide application prospect.

The invention discloses a graphite piece silicon carbide coating and a preparation method thereof, and belongs to the technical field of inorganic non-metallic materials. The method comprises the following steps: firstly, carrying out surface polishing, cleaning and drying pretreatment on a graphite piece; then a solution containing phosphinazine functionalized silazane and a boron-silicon carlamide compound is adopted for spraying the pretreated graphite piece, drying and curing are conducted, and a surface modification layer is formed; and finally, placing the surface-modified graphite piece in chemical vapor deposition equipment, and depositing at specific temperature, pressure and atmosphere to form the silicon carbide coating. According to the method, uniform nucleation and crystallization of the silicon carbide coating are effectively promoted through unique surface modification treatment, and the compactness and uniformity of the coating and the binding force of the coating and a matrix are remarkably improved. The obtained coating graphite piece has excellent thermal corrosion resistance, oxidation resistance and mechanical property, the service life and the use frequency of the coating graphite piece in semiconductor epitaxial equipment are remarkably prolonged, the whole preparation process is environmentally friendly, and the coating graphite piece is suitable for coating treatment of a large graphite base material.

The invention provides a 1500-DEG C thermal shock and oxidation resistant plasma spraying method for a Si coating on the surface of graphite, coating graphite and application. The method comprises the following steps that the to-be-sprayed surface of a graphite matrix is pretreated; spraying the to-be-sprayed surface by adopting a plasma spraying technology to obtain a Si coating on the to-be-sprayed surface; carrying out heat treatment on the graphite matrix with the Si coating in a vacuum environment by adopting a vacuum heat treatment technology, so that part of solid silicon in the Si coating is molten into liquid silicon or silicon steam, and the liquid silicon or silicon steam permeates into the graphite matrix containing air holes under the action of capillary tubes, so that part of liquid silicon or silicon steam and the graphite matrix are subjected to chemical reaction; and thus, the gradient transition Si / SiC coating is obtained through in-situ growth on the to-be-sprayed surface of the graphite matrix. According to the method provided by the invention, the problem that a traditional method for spraying the Si coating on the surface of the graphite in a plasma manner cannot be used in an environment of 1500 DEG C is solved.

The invention belongs to the technical field of silicon carbide coatings, and particularly relates to a method for quickly depositing a silicon carbide coating through CVD (Chemical Vapor Deposition), which comprises the following steps: pretreating a graphite substrate; debugging the equipment; placing the pretreated substrate in a reaction furnace, closing a furnace door, starting a vacuum system, pumping the pressure in the reaction furnace to-Pa, and reducing the interference of air in the furnace on the reaction; introducing a small amount of hydrogen into the reaction furnace, rapidly raising the temperature in the furnace to 800-900 DEG C, maintaining the temperature, then introducing a very small amount of silicon source and carbon source gas, and carrying out preliminary deposition on the surface of the substrate; and hydrogen, silicon tetrachloride and methane are sequentially introduced. The preparation method of the CVD silicon carbide coating can solve the problems of low deposition rate, long preparation period and the like when the existing CVD process is used for preparing the silicon carbide coating, so that the production efficiency can be greatly improved, the cost can be reduced, and the preparation method has important significance in promoting the application of the silicon carbide coating in more fields.

The invention discloses a method for preparing a carbide coating with high bonding strength on a graphite surface. The method comprises the following steps: roughening the graphite surface to obtain roughened graphite, coating transition layer slurry on the roughened graphite surface, performing first sintering to obtain a transition layer, coating surface layer slurry on the transition layer surface, and performing second sintering to obtain the carbide coating. According to the preparation method, the synergistic effect of chemical bonding and mechanical embedding is achieved by optimizing the surface roughness, designing the transition layer and sintering the carbide coating, the carbide coating with the high interface bonding force is prepared on the graphite surface, and the preparation method is suitable for surface modification of graphite-based materials under the harsh working conditions of high temperature, high corrosion and the like.

The invention discloses a preparation method of a SiC coating graphite base transition layer. The technical problems that in the prior art, the bonding force between a SiC coating and a graphite base is insufficient, and the compactness of the coating is poor are solved. The method comprises the following steps: gradient functionalization pretreatment: carrying out plasma microcosmic roughening treatment and organosilicon compound dipping-pyrolysis-nitriding treatment on a graphite base to form a Si-C-O-N functionalized transition layer; multi-stage pulse chemical vapor deposition is carried out, low-temperature seed layer deposition, medium-temperature growth layer deposition and high-temperature densification layer deposition are carried out in three stages, and different pulse periods and precursor combinations are adopted; in-situ plasma auxiliary treatment is conducted, and plasma treatment is conducted at the deposition stage interval and after the final stage is completed. Strong interface combination of the graphite substrate and the SiC coating is achieved through unique gradient functionalization pretreatment, the coating density is improved through the multi-stage pulse CVD technology, the performance of the SiC coating graphite base in semiconductor processing and high-temperature plasma environments is remarkably improved, and the service life of the SiC coating graphite base in the semiconductor processing and high-temperature plasma environments is remarkably prolonged.

The present invention belongs to the technical field of composite silicon-based negative electrode materials and discloses a composite silicon-based negative electrode material, a preparation method, and a solid-state battery. The composite silicon-based negative electrode material comprises a graphite substrate and silicon carbide nanowires and nanosilicon particles attached to the surface of the graphite substrate. The silicon carbide nanowires are interwoven to form a network structure, and the nanosilicon particles are dispersed in the network structure. The nanosilicon particles are dispersed in the network of interwoven silicon carbide nanowires, presenting a porous structure similar to that of reinforced concrete. The porous structure provides space for volume expansion, mitigating damage to the electrode structure caused by volume expansion during lithium insertion and extraction of the silicon-based negative electrode. At the same time, the one-dimensional silicon carbide therein, due to its high mechanical strength, can mitigate damage to the electrode structure caused by long-term cycling of the silicon negative electrode, thereby improving the mechanical properties of the silicon negative electrode and thus improving the cycling performance of the silicon electrode.

The invention relates to a novel silicon-carbon material and a preparation method and application thereof, the silicon-carbon material comprises a graphite substrate, a silicon layer coating the outer surface of the graphite substrate and a silicon carbide layer coating the outer surface of the silicon layer, and a graphite-silicon-silicon carbide three-layer composite structure is formed; wherein the silicon layer and the silicon carbide layer are formed by one-time continuous deposition through a chemical vapor deposition process; the silicon carbon material is applied to a negative electrode material of a lithium ion battery. According to the novel silicon-carbon material as well as the preparation method and the application thereof, a single chemical vapor deposition process is adopted, and selective deposition of a silicon material and a silicon carbide material is realized by accurately regulating and controlling the hydrogen content in a deposition atmosphere on the premise of not changing equipment and raw materials; according to the method, the novel silicon carbon material with the SiC coated silicon structure (SiC coated Si / G) is successfully prepared.

The invention provides an inner hole plasma spraying high-bonding-strength bonding layer and Y2O3 coating material and a preparation technology thereof. The bonding layer comprises a middle transition layer formed after Si and C on the surface of a graphite matrix are subjected to a chemical reaction. The inner hole plasma spraying high-bonding-strength bonding layer provided by the invention is composed of a silicon carbide transition layer generated by in-situ reaction of molten silicon and carbon on the surface of a graphite matrix, and can form a Si-O-M bridged bond with a subsequent ceramic coating, so that interface bonding is converted into chemical bonding from mechanical anchoring, and the bonding strength is improved. And meanwhile, by utilizing the thermal expansion characteristic of silicon carbide between graphite and ceramic, the purposes of buffering thermal mismatch stress step by step on the atomic scale, blocking high-temperature diffusion of carbon elements and endowing the coating with lasting high bonding strength and thermal cycling stability are achieved.

The invention discloses an interpenetrating network structure tantalum carbide composite coating as well as a preparation method and application thereof, and relates to the technical field of graphite materials. Comprising the following steps: 1, preparing a carbide coating with an interpenetrating network structure on a graphite substrate; 2, cleaning and drying the carbide coating with the interpenetrating network structure, mixing inorganic tantalum salt, alkane and hydrogen according to the molar ratio of (2-5): (2-5): (1-2) in an inert atmosphere by taking argon as carrier gas, and then carrying out CVD (Chemical Vapor Deposition) under the conditions that the pressure of the mixed gas is 5-100 mbar, the deposition temperature is 1000-1800 DEG C and the deposition time is 6-10 hours to obtain the interpenetrating network structure carbide coating. The yield of the TaC coating is improved, the binding force of the coating and a substrate material is improved, and cracking of the coating is reduced.

The invention discloses a composite material and a preparation method thereof, an electrode and a battery, and relates to the technical field of new energy. The composite material comprises a graphite matrix, a first coating carbon layer coating the graphite matrix, and a second coating carbon layer coating the first coating carbon layer, wherein the material of the first carbon coating layer comprises carbon nanotubes, and the material of the second carbon coating layer comprises biomass carbon source derived carbon, zeolite imidazate framework material derived carbon and resin derived carbon. The composite material provided by the embodiment of the invention has relatively high conductivity.

A field emission (FE) cathode for a vacuum electronic device (VED) includes a graphite substrate or framework in the shape of a hollow cylinder, and at least one continuous carbon nanotube (CNT) fiber in tension or compression around at least a portion of the graphite substrate. The at least one continuous CNT fiber can include a filament, yarn, braided yarn, film, fabric, or combination thereof. The at least one continuous CNT fiber is secured to the electrically conductive substrate by vacuum brazing or any other suitable means.

The application discloses a kind of multilayer composite ceramic coating with high-temperature stability and corrosion resistance on graphite surface and a preparation method thereof, ultra-high temperature ceramic oxide slurry is brushed on the surface of graphite substrate, first heat treatment is carried out, porous transition layer is obtained, then ultra-high temperature carbide slurry is brushed on the surface of porous transition layer, ultra-high temperature carbide layer is obtained after drying, then roughening treatment is carried out on the surface of ultra-high temperature carbide layer using ultra-high temperature carbide slurry, then second heat treatment is carried out, rough carbide layer is obtained, then dense projection is obtained by point pressure on the surface of rough carbide layer using metal carbide ceramic mixed slurry, and protective layer material is sprayed, and the method of the application can significantly improve the firmness of each layer, effectively avoid the reaction between graphite substrate and surface protective layer at high temperature, leading to coating failure and falling off, further enhance the use limit of protective layer, and have wide application prospect.

This invention discloses a graphite part, its preparation method, its application, and its evaluation method. The graphite part includes a graphite substrate and an amorphous carbon coating disposed on the surface of the graphite substrate. The graphite part satisfies Q=Y×Δρ×(Ra^0.5) / d≥4.0: By coupling the coating's energy dissipation capacity (Y), the substrate's gradient densification degree (Δρ), the substrate's surface morphology characteristics (Ra^0.5), and the coating's geometric constraints (d) to a single parameter Q, quantitative characterization and engineering controllability of the crack resistance performance of the amorphous carbon coating during high-temperature carbonization are achieved. In the graphite part prepared when Q≥4.0, the amorphous carbon coating does not crack or shed powder, which is beneficial for its application in ion implanters.

The present invention belongs to the technical field of ultra-high temperature ceramic materials and discloses a high-purity porous tantalum carbide ceramic, a preparation method thereof, and an application thereof. The present invention comprises the following steps: placing a porous graphite substrate horizontally in a vertical vapor deposition chamber, evacuating the chamber, introducing argon gas, increasing the reaction gas pressure to 10-100 mbar, and heating the graphite substrate to a deposition temperature of the tantalum element; delivering an inorganic tantalum salt and hydrogen into the chamber to deposit the tantalum element in a first region; introducing argon gas into the reaction chamber to increase the reaction gas pressure, increasing the carrier gas flow of the inorganic tantalum salt, and increasing the deposition temperature of the tantalum element to deposit the tantalum element in a second region, and repeating the process to deposit the tantalum element on the porous graphite substrate from the inside out; and after the tantalum element is deposited, heating the high-purity porous graphite substrate to react and obtain tantalum carbide. By adjusting the reaction conditions, the reaction gas flow gradually penetrates the porous material at different depths, and the tantalum is uniformly deposited at different positions.

The invention discloses a graphite negative electrode material and a preparation method thereof, a pole piece and an electrochemical device. The preparation method of the graphite negative electrode material comprises the following steps: performing heat treatment on a raw material mixture comprising graphite, an indium source and a solvent, thereby obtaining the graphite negative electrode material, wherein the mass ratio of the indium source to the graphite is 0.2%-2%; the indium source is an indium-containing compound; the temperature of the heat treatment is 200-1000 DEG C. The graphite negative electrode material comprises a graphite base material and a coating layer coating the surface of the graphite base material, and the coating layer comprises an indium element. When the graphite negative electrode material is actually applied to an electrochemical device such as a lithium battery, the lithium ion conductivity can be effectively improved, meanwhile, the stability of a formed SEI film is effectively improved, and finally, the comprehensive electrochemical performance such as the first coulombic efficiency, the cycle and storage stability and the like of the obtained lithium battery is integrally improved.

The invention discloses a preparation method and application of doped graphite, and belongs to the technical field of doped graphite. The method comprises the following steps: performing vacuum annealing on a single crystal metal substrate adsorbed with a doped element compound to obtain a doped element embedded single crystal metal substrate; the single crystal metal substrate embedded with the doping elements is attached to a graphite base material, heat preservation is conducted for 1-3 h at the temperature of 1000-1500 DEG C in a non-oxidizing atmosphere, then heat preservation is conducted for 4-12 h at the temperature of 700-900 DEG C, and the doped graphite is obtained after cooling. According to the invention, the doping elements are embedded into the single crystal metal substrate, and the graphite is doped through variable temperature growth, so that the super-lubricity is maintained while the doping uniformity and controllability are ensured, and the method is more suitable for being applied to electronic devices needing to maintain the super-lubricity.

The invention provides a method for repairing a wafer carrying disc, and the method comprises the following steps: providing a wafer carrying disc to be repaired, the wafer carrying disc to be repaired comprises a graphite substrate and a silicon carbide coating, the graphite substrate comprises a first surface and a second surface which are oppositely arranged, and the silicon carbide coating is located on the first surface; the to-be-repaired wafer loading disc is provided with a concave hole, and the concave hole penetrates through the silicon carbide coating and a part of the thickness of the graphite substrate; filling the concave hole with a repair material comprising a resin material, and graphitizing the resin material to obtain a graphitized repair structure; the maximum distance between the surface, away from the second surface, of the graphitization repair structure and the second surface is smaller than the distance between the surface, away from the graphite substrate, of the silicon carbide coating and the second surface; and forming a silicon carbide repairing structure in the concave hole, wherein the surface, away from the graphite substrate, of the silicon carbide repairing structure is flush with the surface, away from the graphite substrate, of the silicon carbide coating. Recycling and reusing of the wafer carrying disc can be achieved.

The invention provides a large-area (100) oriented metal organic framework ZIF-8 film as well as a preparation method and application thereof. Specifically, the method comprises the following steps: enabling at least part of the surface of a graphite substrate to be in contact with a ZIF-8 film synthesis solution containing Zn < 2 + > and 2-methylimidazole, enabling the Zn < 2 + > to react with the 2-methylimidazole, and forming the ZIF-8 alignment film on the graphite substrate. The ZIF-8 oriented film prepared by the method disclosed by the invention is uniform and compact, is highly oriented and has high H2 selective separation performance.

The invention belongs to the technical field of material preparation, and discloses a CVD (chemical vapor deposition) protection method for a special-shaped area of a graphite matrix, which comprises the following steps: S1, filling the special-shaped area of the graphite matrix with slurry which comprises expanded graphite powder, deionized water, polyethylene glycol and carbon nanotubes; s2, carrying out heat preservation for 5-15 minutes at the temperature of 200-300 DEG C in an inert atmosphere, and then carrying out heat preservation for 15-25 minutes at the temperature of 500-600 DEG C, so that the porosity of the slurry is kept at 40%-60%; s3, preparing a coating on the surface of the graphite substrate by using a CVD (chemical vapor deposition) process; and S4, removing the slurry and the coating of the graphite substrate in the special-shaped area. According to the method, the problem that a coating material is prone to non-uniform deposition in the CVD process of the special-shaped graphite piece is solved, the requirements for high-temperature stability, complex geometric adaptability, interface bonding reliability and process compatibility are met, and the problems that the coating precision is out of control, materials are wasted, and product performance is reduced are solved.

The invention relates to a device and a method for preparing polycrystalline silicon carbide, polycrystalline silicon carbide and application thereof. The apparatus comprises: a crucible; the graphite substrate is arranged on the crucible and is positioned at the upper part of the crucible; the air channel structure is arranged in the crucible and is used for introducing air into the crucible; the baffle is arranged in the crucible, a gap is formed between the baffle and the graphite substrate, a projection covers the graphite substrate, and a gap is formed between the baffle and the bottom wall of the crucible; and the heater is arranged in the crucible and is lower than the baffle. The device can be used for manufacturing polycrystalline silicon carbide with low resistivity.

The invention discloses a high-efficiency electrocatalytic oxidation electrode production process, which relates to the technical field of electrochemical catalytic materials, and comprises the following steps: pretreatment of an electrode substrate, construction of an intermediate conductive layer, preparation of an active component precursor solution, loading of active components, and heat treatment for film formation. According to the invention, the oxygen-rich vacancy structure is formed through cooperation of multiple metals, the SnO2 / TiO2 intermediate conductive layer is constructed, and precise heat treatment is carried out at 450 DEG C, so that the phenol degradation current density reaches 25mA / cm, and the overpotential of electrolyzed water for oxygen production is 280mV; the non-noble metal and the graphite substrate are adopted, the cost is only 5%-20% of that of a noble metal electrode, the attenuation is less than 10% when the electrode operates for 200 hours in an environment with the pH value of 2, the process is simple and convenient, the electrode is adaptive to multiple scenes such as titanium / graphite substrate and wastewater treatment, and the existing electrode performance and cost bottlenecks are broken through.

This invention discloses a method for preparing a SiC-coated graphite substrate transition layer for semiconductors. The method is implemented using a preparation device for this transition layer. The device includes a support base, with a vapor deposition reaction chamber located at the upper center of the support base. An air inlet is located at the upper center of the vapor deposition reaction chamber. A set of first suction pumps is installed on both the lower left and lower right sides of the vapor deposition reaction chamber. By incorporating a storage and exchange mechanism, the heat from the previous step is exchanged for the gas required for preheating in the next step, reducing heat loss and saving energy. Furthermore, by incorporating a first recovery mechanism and a second recovery mechanism, the efficiency of gas separation is improved, making the entire separation process more precise.

The application relates to a graphite base material grinding processing equipment for fuel cell bipolar plates, which comprises a graphite crusher, a polishing box arranged below the graphite crusher, a material guiding assembly arranged at the top of the polishing box, a first polishing assembly arranged in the polishing box, the first polishing assembly comprising a first polishing block, a first rotating assembly arranged on the first polishing assembly, a second polishing assembly arranged in the polishing box, the second polishing assembly comprising a second polishing block, a second rotating assembly arranged on the second polishing assembly, a driving assembly arranged at the bottom of the polishing box, and a conveying assembly arranged in the polishing box, wherein the first polishing block and the second polishing block are used for polishing graphite blocks into spherical graphite in the rotating process, and the conveying assembly is used for conveying the graphite blocks at the bottom of the polishing box from bottom to top, so that the polishing efficiency is improved, the graphite blocks at the bottom of the polishing box can also be polished, and the polishing quality is improved.

The invention relates to a method for improving a graphite pore silicon carbide coating, which comprises the following steps: placing a graphite base material in a reaction cavity, and introducing hydrogen to activate the graphite base material; introducing silicon-based precursor gas and hydrogen, and performing permeable reaction treatment on the graphite base material subjected to activation treatment so as to form a SiC permeable layer in the graphite base material and form a SiC plugging layer on the surface of the graphite base material; and continuously introducing the silicon-based precursor gas and hydrogen, and depositing on the SiC plugging layer to form a SiC main coating. According to the preparation method, the integrated preparation of the comprehensive plugging of the air holes and the functional coating is realized through the steps of plugging the air holes through siliconizing and growing the main coating through the conventional CVD process.

An electrolysis reactor for electrolytically generating one or more metal cathode product(s) includes a dimensionally stable anode (DSA) and a cathode positioned in a molten salt electrolyte containing fused salts, wherein the DSA includes a graphite substrate and a non-ceramic, transition metal oxide coating on the substrate and wherein during electrolysis the one or more metal cathode product(s) are produced at the cathode.

The invention discloses a preparation method of a graphite substrate tantalum carbide coating based on a gradient buffer layer, and belongs to the technical field of third-generation semiconductor production. A Ta2C / TaC gradient buffer layer is generated on a graphite substrate in situ, the TaC molar fraction is gradually transited to 90% or above of a surface layer from about 10% close to the graphite substrate, and then the gradient buffer layer is converted into a single-phase TaC coating through medium and low temperature pretreatment and high temperature annealing treatment. The lattice constant and the thermal expansion coefficient of Ta2C are between those of graphite and TaC, and thermal stress can be effectively and gradually released, so that cracking and stripping of the coating are remarkably inhibited. According to the continuous component gradient design, the thermal expansion coefficient can realize stable transition from the graphite substrate to the pure TaC coating, the interface stress concentration caused by sudden change of the thermal expansion coefficient is remarkably reduced, and the interface residual stress is reduced, so that microcrack initiation and interface stripping of the coating in the high-temperature circulating process are effectively inhibited.

The invention relates to the technical field of graphite film production, and discloses a microstructure ultrathin graphite film production process and equipment based on laser processing, and the microstructure ultrathin graphite film production process based on laser processing comprises the following steps: providing an ultrathin graphite film base material; etching the surface of the ultrathin graphite film substrate by adopting a laser beam to form a micropore or microcrack structure; compounding a plurality of layers of ultrathin graphite film base materials; pET black and white adhesive layers are adhered to the two sides of the composite ultrathin graphite film. In the preparation process of the ultrathin graphite film, the micro-pore or micro-crack structure is processed on the ultrathin graphite base material through the laser etching process, the size of the micro-pore or micro-crack structure is controllable, micro relative slippage and bending deformation between sheet layers of the ultrathin graphite film base material are allowed, and strain energy is absorbed, so that the flexibility is improved; and therefore, the cable can bear a certain degree of repeated bending without being broken.

The invention provides a photo-thermal regulation and control multilayer film and a preparation method thereof, and belongs to the technical field of optical films, the film comprises a fourth film layer, a third film layer, a second film layer and a first film layer which are sequentially sputtered and deposited on the surface of a graphite substrate from bottom to top; wherein the first thin film layer and the second thin film layer are used for realizing visible light structural color regulation and mechanical protection, the third thin film layer is used for realizing directional radiation of a target angle in a medium and long infrared band, and the fourth thin film layer, the third thin film layer, the second thin film layer and the first thin film layer form a Fabry-Perot resonant cavity. Therefore, the wave absorbing performance of the whole film in a medium-long infrared band can be regulated and controlled. The photo-thermal regulation and control multi-layer thin film successfully realizes organic coupling of mechanical protection, visible light structural color regulation and control, and medium and long infrared directional radiation and radiation heat dissipation.

The invention provides an in-situ preparation method of a trace gold self-supporting catalyst loaded on a graphite substrate, which comprises the following steps: adding a neutral polar solvent into a gold source, carrying out ultrasonic dissolution to obtain a precursor solution, dispensing the precursor solution on the graphite substrate, standing at room temperature for reaction, cleaning with distilled water, and drying at room temperature to obtain the trace gold self-supporting catalyst loaded on the graphite substrate. The trace gold self-supporting catalyst loaded on the graphite substrate is obtained. The invention also provides an application. The trace gold self-supporting catalyst loaded on the graphite substrate prepared by the invention is used for an electro-catalysis hydrogen evolution reaction. The trace gold self-supporting catalyst loaded on the graphite substrate is prepared in situ through a simple room temperature method, the gold loading capacity of the catalyst is extremely low, and the cost is low; no binder or conductive agent is used, the conductivity is good, and shedding or agglomeration of the catalyst is avoided; the preparation method is simple and does not need extra energy. The obtained catalyst is high in catalytic activity and strong in stability, and has a wide application prospect in the field of electro-catalytic hydrogen evolution.