Seed crystal support for growing silicon carbide crystal with high quality

Abstract

The invention provides a seed crystal support for growing a silicon carbide crystal with high quality by a physical vapor phase transport method. The seed crystal support comprises a graphite substrate and a compact film layer arranged on the surface of the graphite substrate. The compact film layer is stable and compact at high temperature and eliminates the defects of the graphite substrate caused by porosity. The compactness of the film layer inhibits steam generated by the back evaporation of the crystal from escaping from a hole of the graphite substrate, eliminates the planar hexagonal defect caused by back evaporation in the process of crystal growth and greatly improves the quality and the yield of the silicon carbide crystal.

Description

technical field [0001] The invention belongs to the field of crystal growth, in particular to a seed crystal support for growing high-quality silicon carbide crystals. Background technique [0002] Wide bandgap semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) are the third-generation semiconductors after silicon (Si) and gallium arsenide (GaAs). Compared with Si and GaAs traditional semiconductor materials, SiC has excellent properties such as high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, and has great potential in high temperature, high frequency, high power and radiation resistant devices. Application prospects. In addition, due to the similar lattice constant and thermal expansion coefficient of SiC and GaN, it also has extremely broad application prospects in the field of optoelectronic devices. [0003] At present, the most effective method for growing SiC cr...

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Problems solved by technology

This defect is a killer defect, its formation will drastically reduce wafer quality and yield

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