Graphite seed crystal support for silicon carbide crystal growth
A crystal growth, silicon carbide technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0030] First, put the graphite crucible with silicon carbide raw material in the material area and the graphite seed crystal holder without seed crystal on the upper part into the thermal insulation carbon felt, and then put it into the crystal growth furnace chamber, and the vacuum degree is pumped to 1.0×10 -2Below Pa, inflate to the required pressure such as 30 Torr, start to heat up to the target temperature such as 2100°C, grow for a certain period of time such as 10h, cool down to room temperature by program, and start the furnace to obtain polycrystalline silicon carbide with a thickness of about 0.5mm on the graphite seed crystal support. layer, and finally a polycrystalline silicon carbide layer with a flatness of 30 μm and a thickness of 0.2 mm that can be used for SiC crystal growth is obtained by mechanical processing on the graphite seed crystal support. Among them, the thickness of the polycrystalline silicon carbide polycrystalline layer can be adjusted according...
Embodiment 2
[0032] The graphite seed crystal holder with the polycrystalline silicon carbide layer deposited on the surface obtained in the above examples is used for crystal growth by the PVT method, and the crystal growth surface obtained by observing the obtained crystal growth surface through a white light interference microscope, as shown in figure 2 As shown in (a), it can be clearly seen that there are no defects such as micropipes, black spots and holes on the crystal growth surface.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com