The invention discloses a novel combined
graphite crucible for growth of 12-inch
silicon carbide single crystals, which comprises an upper heating
electrode, a middle heat preservation structure and an upper heater, and is characterized in that the middle heat preservation structure comprises a first middle heat preservation structure, a through hole is formed in the middle of the heat preservation top, a
graphite rod is inserted into the heat preservation top, and a
crucible cover is in threaded connection with the lower part of the
graphite rod; a
crucible barrel is in threaded connection with the lower portion of the crucible cover, a
crystallization ring is arranged in the crucible
barrel, a support is arranged above the
crystallization ring, a graphite support is arranged above the support, a pressing ring is arranged below the
crystallization ring, a backing ring is arranged below the pressing ring, and the backing ring is located on the crucible bottom. The crucible structure with
high density and low
porosity is manufactured by adopting an isostatic pressing process, so that the service life of the crucible can be prolonged, and the stability of the crucible can be improved; and a combined crucible structure is adopted, so that the use cost of the crucible can be reduced, the service life is prolonged, and the
crystal quality can be improved by regularly replacing part of components.