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Preparation method of SiC nanowire with expandable graphite as carbon source

A technology of expanded graphite and nanowires, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of low yield of nanowires and increased preparation cost, and achieve simple process, low energy consumption, and no catalyst. Effect

Active Publication Date: 2012-10-17
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since most of the above preparation methods require higher temperature or catalyst assistance, the preparation cost is greatly increased, and the yield of nanowires is very low.

Method used

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  • Preparation method of SiC nanowire with expandable graphite as carbon source
  • Preparation method of SiC nanowire with expandable graphite as carbon source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] In this embodiment, expandable graphite is used as the carbon source SiC nanowires. The steps are as follows:

[0020] 1. Mix expandable graphite with a mass fraction of 21.4%, industrial silicon powder with a mass fraction of 25% and silica powder with a mass fraction of 53.6% and grind them evenly, place them in a high-purity graphite crucible and place them at high temperature In the atmosphere box furnace;

[0021] 2. Vacuumize and fill the protective gas with nitrogen, and the pressure in the furnace during the preparation process is lower than 1MPa;

[0022] 3. The high-temperature atmosphere box furnace is raised to 1500°C, and the temperature is kept and sintered for 6 hours;

[0023] 4. Naturally cool down to room temperature with the furnace, and then open the furnace to obtain dark green SiC nanowires, such as figure 1 The nanowires shown are approximately 100 nm in diameter.

Embodiment 2

[0025] In this embodiment, expandable graphite is used as the carbon source SiC nanowires. The steps are as follows:

[0026] 1. Dissolve ethyl orthosilicate in absolute ethanol, add oxalic acid to accelerate the hydrolysis of ethyl orthosilicate, the molar ratio of ethyl orthosilicate: absolute ethanol: water is 1:0.86:4, dilute oxalic acid to 0.01mol / L. Then add expandable graphite, tetraethyl orthosilicate: the molar ratio of expandable graphite is 1:1;

[0027] 2. Prepare the mixed gel with magnetic stirring, dry the gel at 70°C for 4 hours, then rise to 90°C for 4 hours, then rise to 110°C for 4 hours; grind it into powder, put it in a high-purity graphite crucible and put it in High temperature atmosphere box furnace;

[0028] 3. Vacuumize and fill the protective gas with argon, and the pressure in the furnace during the preparation process is lower than 1MPa;

[0029] 4. The high-temperature box-type atmosphere furnace is raised to 1500°C, and the temperature is kept...

Embodiment 3

[0032] The difference between this embodiment and Example 1 is that in step 1, the mass fraction percentage is 5.2% expandable graphite, the mass fraction percentage is 30.2% industrial silicon powder and the mass fraction percentage is 64.6% The silica powder is mixed and ground evenly; In step 3 the temperature was raised to 1300°C. Other steps are identical with embodiment 1. The dark green SiC nanowires with a diameter of about 10nm were obtained immediately after firing the furnace.

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Abstract

The invention discloses a preparation method of SiC nanowire with expandable graphite as a carbon source. The expandable graphite is used as the carbon source, silicon powder and silica powder are used as a silicon source, or TEOS (tetraethoxysilane) is used as the silicon source. The TEOS is dissolved in absolute ethanol. And oxalic acid is added to accelerate the hydrolysis of TEOS. After drying, the carbon source and silicon source are mixed and grinded evenly, to be placed in a graphite crucible and then placed in a high-temperature-atmosphere box-type furnace and evacuated and filled with protective gas. The temperature is heated to 1300-1800 DEG C and the mixture is subjected to heat preservation and sintering for 2 hours. The pressure of the furnace is lower than 1MPa during the whole preparation process. After natural cooling is carried out on the furnace to the room temperature, the SiC nanowire is obtained. Themethod provided by the invention has characteristics of being cheap in raw material, simple in process, free of harmful gas polluting the environment, no requirement of any catalyst and large scale and high yield, which is suitable for industrial production of SiC nanowire.

Description

technical field [0001] The invention relates to a preparation method of SiC nanowires, in particular to a preparation method of SiC nanowires using expandable graphite as a carbon source. Background technique [0002] One-dimensional semiconducting nanomaterials have attracted extensive attention due to their important physical and chemical properties. As the third-generation wide-bandgap semiconductor material, SiC nanowires have the characteristics of high hardness, high thermal conductivity, high breakdown electric field, high electron mobility and strong oxidation resistance. Materials, super-hydrophobic devices, new energy materials and catalysis have broad application prospects. Therefore, it is of great significance for the industrial production of SiC nanowires to study and explore methods for preparing SiC nanowires efficiently and to prepare SiC nanowires on a large scale and with high yield. [0003] There are many methods for preparing SiC nanowires, such as ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36B82Y30/00C01B32/97C01B32/984
Inventor 陈建军张炬栋王明明
Owner ZHEJIANG SCI-TECH UNIV
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